ILD620/620GB QUAD CHANNEL ILQ620/620GB DUAL CHANNEL AC INPUT PHOTOTRANSISTOR OPTOCOUPLER FEATURES • Identical Channel to Channel Footprint ILD620 Crosses to TLP620-2 ILQ620 Crosses to TLP620-4 • Current Transfer Ratio (CTR) at IF= ± 5 mA ILD/Q620: 50% Min. ILD/Q620GB: 100% Min. • Saturated Current Transfer Ratio (CTRSAT) at IF= ± 1 mA ILD/Q620: 60% Typ. ILD/Q620GB: 30% Min. • High Collector-Emitter Voltage, BVCEO=70 V • Dual and Quad Packages Feature: - Reduced Board Space - Lower Pin and Parts Count - Better Channel to Channel CTR Match - Improved Common Mode Rejection • Field-Effect Stable by TRIOS (TRansparent IOn Shield) • Isolation Test Voltage from Double Molded Package • Underwriters Lab File #E52744 • VDE 0884 Available with Option 1 Dimensions in inches (mm) Pin One I.D. 4 3 2 .268 (6.81) .255 (6.48) 5 6 7 .390 (9.91) .379 (9.63) 1 8 Collector A/K 2 7 Emitter A/K 3 6 Collector A/K 4 5 Emitter .045 (1.14) .150 (3.81) .030 (.76) .130 (3.30) 4° Typ. .305 Typ. (7.75) Typ. .135 (3.43) .115 (2.92) 10 ° Typ. .040 (1.02) .030 (.76 ) .022 (.56) .018 (.46) .100 (2.54) Typ. 3°–9° .012 (.30) .008 (.20) K=Cathode .268 (6.81) .255 (6.48) Emitter Forward Current .........................................± 60 mA Surge Current............................................... ± 1.5 A Power Dissipation ...................................... 100 mW Derate from 25°C .................................. 1.3 mW/°C Package Isolation Test Voltage(t=1 sec.)......... 5300 VACRMS Package Dissipation, ILD620/GB ............. 400 mW Derate from 25°C ............................... 5.33 mW/°C Package Dissipation, ILQ620/GB ............. 500 mW Derate from 25°C ............................... 6.67 mW/°C Creepage ................................................7 mm min. Clearance ...............................................7 mm min. Isolation Resistance VIO=500 V, TA=25°C ................................≥1012 Ω VIO=500 V, TA=100°C ............................. ≥10 11 Ω Storage Temperature .................. –55°C to +150°C Operating Temperature............... –55°C to +100°C Junction Temperature ................................... 100°C Soldering Temperature (2 mm from case bottom).......................... 260°C A/K 8 Maximum Ratings (Each Channel) Detector Collector-Emitter Breakdown Voltage ............. 70 V Collector Current.......................................... 50 mA Collector Current (t <1 ms) ......................... 100 mA Power Dissipation ...................................... 150 mW Derate from 25°C ..................................... 2 mW/°C K=Cathode 1 .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) A/K 1 16 Collector Pin One I.D. A/K 2 15 Emitter A/K 3 14 Collector A/K 4 13 Emitter A/K 5 12 Collector A/K 6 11 Emitter A/K 7 10 Collector A/K 8 .150 (3.81) .130 (3.30) 4° Typ. .022 (.56) .018 (.46) 9 Emitter .305 Typ. (7.75) Typ. 10 ° Typ. .040 (1.02) .030 (.76 ) .100 (2.54) Typ. .135 (3.43) .115 (2.92) 3°–9° .012 (.30) .008 (.20) DESCRIPTION The ILD/Q620 and ILD/Q620GB are multi-channel input phototran-sistor optocouplers that use inverse parallel GaAs IRLED emitters and high gain NPN silicon phototransistors per channel. These devices are constructed using over/under leadframe optical coupling and double molded insulation resulting in a Withstand Test Voltage of 7500 VACPEAK. The LED parameters and the linear CTR characteristics combined with the TRIOS field-effect process make these devices well suited for AC voltage detection. The ILD/Q620GB with its low IF guaranteed CTRCEsat minimizes power dissipation of the AC voltage detection network that is placed in series with the LEDs. Eliminating the phototransistor base connection provides added electrical noise immunity from the transients found in many industrial control environments. 5–1 Characteristics Symbol Min. Typ. Max. Unit Condition VF 1 1.15 1.3 V IF=± 10 mA 20 Emitter Forward Voltage Forward Current IF 2.5 µA VR=± 0.7 V Capacitance CO 25 pF VF=0 V, f=1 MHz Thermal Resistance, Junction to Lead RTHJL 750 °C/W Capacitance CCE 6.8 pF VCE=5 V, f=1 MHz Collector-Emitter Leakage Current ICEO 10 100 nA VCE=24 V Collector-Emitter Leakage Current ICEO 2 50 µA TA=85°C, VCE=24 V Thermal Resistance, Junction to Lead RTHJL 500 Detector °C/W Package Transfer Characteristics Channel/Channel CTR Match CTRX/CTRY 1 to 1 CTR Symmetry ICE(RATIO) 0.5 Off-State Collector Current ICE(OFF) 1 Saturated Current Transfer Ratio CTRCEsat 60 Current Transfer Ratio CTRCE Collector-Emitter Saturation Voltage VCEsat IF=± 5 mA, VCE=5 V 3 to 1 2 ICE(IF=–5 mA)/IF(=+5 mA) µA VF=± 0.7 V, VCE=24 V % IF=± 1 mA, VCE=0.4 V 600 % IF=± 5 mA, VCE=5 V 0.4 V IF=± 8 mA, ICE=2.4 mA % IF=± 1 mA, VCE=0.4 V 10 ILD/Q620 50 80 ILD/Q620GB Saturated Current Transfer Ratio CTRCEsat 30 Current Transfer Ratio (Collector-Emitter) CTRCE 100 Collector-Emitter Saturation Voltage VCEsat 200 600 % IF=± 5 mA, VCE=5 V 0.4 V IF=± 1 mA, ICE=0.2 mA V/µs VCM=50 VP-P, RL=1 kΩ, IF=0 mA VCM=50 VP-P, RL=1 kΩ, IF=10 mA Isolation and Insulation Common Mode Rejection, Output High CMH 5000 Common Mode Rejection, Output Low CML 5000 V/µs Common Mode Coupling Capacitance CCM 0.01 pF Package Capacitance CI-O pF VI-O=0 V, f=1 MHz Insulation Resistance RS 1012 Ω VI-O=500 V Channel to Channel Insulation 0.8 500 VAC Switching Times Figure 1. Non-saturated switching timing IF=10 mA F=10 KHz, DF=50% Figure 3. Non-saturated switching timing IF VCC=5 V VO RL=75 Ω tPHL V0 tPLH tS Figure 2. Saturated switching timing 50% F=10 KHz, DF=50% VCC=5 V RL tD tR tF VO IF=10 mA ILD/Q620/GB 5–2 Figure 6. Collector-emitter g leakage versus ptemperature Iceo - Collector-Emitter - nA Figure 4. Saturated switching timing IF tD tR VO tPLH Symbol Typ. Unit Test Condition On Time TON 3.0 µs IF=± 10 mA Rise Time tR 20 µs VCC=5 V µs RL=75 Ω 50% of VPP Off Time tOFF 2.3 Fall Time tF 2.0 µs Propagation H-L tPHL 1.1 µs Propagation L-H tPLH 2.5 µs Characteristic Symbol Typ. Unit Test Condition On Time TON 4.3 µs IF=± 10 mA Rise Time tR 2.8 µs VCC=5 V Off Time tOFF 2.5 µs RL=1 Ω Fall Time tF 11 µs VTH=1.5 V Propagation H-L tPHL 2.6 µs Propagation L-H tPLH 7.2 µs Vce = 10V 1 10 TYPICAL 0 10 10 -1 10 -2 -20 0 20 40 60 80 100 Ta - Ambient Temperature - °C 120 100 80 60 TJ (MAX)=100°C 40 20 0 --60 -40 -20 0 20 40 60 80 Ta - Ambient Temperature - °C 100 Figure 8. Maximum LED power dissipation 200 150 100 50 0 60 --60 40 -40 -20 0 20 40 60 80 Ta - Ambient Temperature - °C 100 85°C 20 Figure 9. Collector current versus diode forward current 25°C 0 100 Normalized to 50 IF=10 mA VCE=5 V TA=25°C 10 5.0 –55°C IC –Normalized Collector Current IF - LED Forward Current - mA 2 10 Figure 7. Maximum LED current versus ambient temperature Figure 5. LED forward current versus forward voltage -20 -40 -60 -1.5 3 10 IF - Maximum LED Current - mA Characteristic 5 4 10 PLED - LED Power - mW tS tPHL VTH=1.5 V tF 10 -1.0 -0.5 0.0 0.5 1.0 1.5 VF - LED Forward Voltage - V ILD/Q620GB ILD/Q620 2.5 1.0 0.5 0.1 1 5 10 Forward Current–IF (mA) 20 ILD/Q620/GB 5–3 Figure 10. Normalization factor for non-saturated and saturated CTR TA=50°C versus if Figure 13. Peak LED current versus peak duration, Tau 10000 2.0 τ 1.5 Duty Factor If(pk) - Peak LED Current - mA CTRNF - Normalized CTR Factor Normalized to: Vce = 10V, IF = 5mA, Ta = 25°C CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) 0.5 Ta = 50°C 1000 100 0.0 .1 1 10 IF - LED Current - mA 10 -6 10 100 P - Detector Power - mW DET CTRNF - Normalized CTR Factor CTRce(sat) Vce = 0.4V NCTRce 1.0 NCTRce(sat) Ta = 70°C .1 1 10 -5 10-4 10-3 10-2 10 -1 10 0 10 1 200 Normalized to: Vce = 10V, IF = 5mA, Ta = 25°C 0.0 τ DF = /t .05 .1 .2 .5 Figure 14. Maximum detector power dissipation 2.0 0.5 t t - LED Pulse Duration - s Figure 11. Normalization factor for non-saturated and saturated CTR TA=70°C versus if 1.5 .005 .01 .02 10 150 100 50 0 -60 100 -40 -20 0 20 40 60 Ta - Ambient Temperature - °C 80 100 IF - LED Current - mA Figure 15. Maximum collector current versus collector voltage Figure 12. Normalization factor for non-saturated and saturated CTR TA=100°C versus if 1000 Normalized to: Vce = 10V, IF = 5mA, Ta = 25°C 1.5 Ice - Collector Current - mA CTRNF - Normalized CTR Factor 2.0 CTRce(sat) Vce = 0.4V NCTRce 1.0 0.5 NCTRce(sat) Ta = 100°C 1 10 IF - LED Current - mA 100 Rth = 500°C/W 10 25°C 50°C 75°C 1 .1 0.0 .1 100 .1 90°C 1 10 Vce - Collector-Emitter Voltage - V 100 ILD/Q620/GB 5–4