IMB16 Transistors General purpose (dual digital transistors) IMB16 zExternal dimensions (Units : mm) zFeatures 1) Two DTB143X chips in a SMT package. (5) R1 2.8 R1 (3) (2) Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 (1) 0to0.1 0.8 0.15 0.3to0.6 R2 0.95 0.95 1.9 2.9 (1) (3) 1.6 (6) R2 1.1 (4) (4) zEquivalent circuit (2) (5) 0.3 (6) IMB16 zPackage, marking, and packaging specifications Type IMB16 Package SMT6 Marking B16 Code T110 Basic ordering unit (pieces) 3000 zAbsolute maximum ratings (Ta = 25°C) Symbol Limits Unit Supply voltage VCC −50 V Input voltage VIN Parameter −30 V 7 Output current IO −500 Power dissipation Junction temperature Pd Tj 300(TOTAL) 150 Storage temperature Tstg −50~+150 mA mW ∗ °C °C ∗200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Parameter Symbol Min. Typ. Max. VI (off) − − −0.3 VI (on) −2.5 − − V VO=−0.3V, IO=−20mA Input current VO (on) II − − − − −0.3 −1.8 V mA IO/II=−50mA/−2.5mA VI=−5V Output current VCC=−50V, VI=0V Input voltage Output voltage Unit Conditions VCC=−5V, IO=−100µA IO (off) − − −0.5 µA DC current gain GI 56 − − − Transition frequency fT − 200 − MHz Input resistance R1 3.29 4.7 6.11 kΩ VCE=−10V, IE=50mA, f=100MHz ∗2 − Resistance ratio R2 / R1 1.7 2.1 2.6 − − ∗1 Measured using pulse current. ∗2 Transition frequency of the device. IO=−50mA, VO=−5V ∗1