TECHNICAL DATA IN74HC4094 8-Bit Serial-Input Shift Register With Latched 3-State Outputs High-Performance Silicon-Gate CMOS The IN74HC4094 is identical in pinout to the LS/ALS4094. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are compatible with LS/ALSTTL outputs. This device consists of an 8-bit shift register and 8-bit D-type latch with three-state parallel outputs. Data is shifted serially through the shift register on the positive going transition of the clock input signal. The output of the last stage SQH can be used to cascade several devices. Data on the SQH output is transferred to a second output (SQH’) on the following negative transition of the clock input signal. The data of each stage of the shift register is provided with a latch, which latches data on the negative going transition of the Strobe input signal. When the Strobe input is held high, data propagates through the latch to a 3state output buffer. This buffer is enabled when Output Enable input is taken high. • Outputs Directly Interface to CMOS, NMOS, and TTL • Operating Voltage Range: 2.0 to 6.0 V • Low Input Current: 1.0 µA • High Noise Immunity Characteristic of CMOS Devices ORDERING INFORMATION IN74HC4094N Plastic IN74HC4094D SOIC TA = -55° to 125° C for all packages PIN ASSIGNMENT LOGIC DIAGRAM FUNCTION TABLE Inputs Clock Output Enable PIN 16 =VCC PIN 8 = GND Parallel Outputs Strobe A Serial Outputs QA QN SQH SQH’ L X X Z Z Q6 L X X Z Z NC SQH H L X NC NC Q6 NC H H L L QN-1 Q6 NC H H H H QN-1 Q6 NC NC NC SQH H X NC = No Change Z = high impedance X = don’t care X NC NC 515 IN74HC4094 MAXIMUM RATINGS* Symbol Parameter Value Unit -0.5 to +7.0 V VCC DC Supply Voltage (Referenced to GND) VIN DC Input Voltage (Referenced to GND) -1.5 to VCC +1.5 V DC Output Voltage (Referenced to GND) -0.5 to VCC +0.5 V DC Input Current, per Pin ±20 mA IOUT DC Output Current, per Pin ±25 mA ICC DC Supply Current, VCC and GND Pins ±50 mA PD Power Dissipation in Still Air, Plastic DIP+ SOIC Package+ 750 500 mW -65 to +150 °C 260 °C VOUT IIN Tstg TL Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage, Output Voltage (Referenced to GND) TA Operating Temperature, All Package Types tr, tf Input Rise and Fall Time (Figure 1) VCC =2.0 V VCC =4.5 V VCC =6.0 V Min Max Unit 2.0 6.0 V 0 VCC V -55 +125 °C 0 0 0 1000 500 400 ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND≤(VIN or VOUT)≤VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 516 IN74HC4094 DC ELECTRICAL CHARACTERISTICS(Voltages Referenced to GND) VCC V 25 °C to -55°C ≤85 °C ≤125 °C Unit VOUT= 0.1 V or VCC-0.1 V IOUT≤ 20 µA 2.0 4.5 6.0 1.5 3.15 4.2 1.5 3.15 4.2 1.5 3.15 4.2 V Maximum Low Level Input Voltage VOUT=0.1 V or VCC-0.1 V IOUT ≤ 20 µA 2.0 4.5 6.0 0.5 1.35 1.8 0.5 1.35 1.8 0.5 1.35 1.8 V Minimum High-Level Output Voltage VIN=VIH or VIL IOUT ≤ 20 µA 2.0 4.5 6.0 1.9 4.4 5.9 1.9 4.4 5.9 1.9 4.4 5.9 V 4.5 6.0 3.98 5.48 3.84 5.34 3.7 5.2 2.0 4.5 6.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 VIN= VIH or VIL IOUT ≤ 4.0 mA IOUT ≤ 5.2 mA 4.5 6.0 0.26 0.26 0.33 0.33 0.4 0.4 Symbol Parameter VIH Minimum High-Level Input Voltage VIL VOH Test Conditions VIN= VIH or VIL IOUT ≤ 4.0 mA IOUT ≤ 5.2 mA VOL Guaranteed Limit Maximum Low-Level Output Voltage VIN=VIH or VIL IOUT ≤ 20 µA V IIN Maximum Input Leakage Current VIN=VCC or GND 6.0 ±0.1 ±1.0 ±1.0 µA IOZ Maximum ThreeState Leakage Current Output in High-Impedance State VIN= VIL or VIH VOUT=VCC or GND 6.0 ±0.5 ±5.0 ±10 µA ICC Maximum Quiescent Supply Current (per Package) VIN=VCC or GND IOUT=0µA 6.0 4.0 40 160 µA 517 IN74HC4094 AC ELECTRICAL CHARACTERISTICS(CL=50pF,Input tr=tf=6.0 ns) Guaranteed Limit VCC V 25 °C to -55°C ≤85°C ≤125°C Unit Maximum Clock Frequency (50% Duty Cycle) (Figures 1 and 5) 2.0 4.5 6.0 6 30 35 5 25 28 4 20 23 MHz tPLH, tPHL Maximum Propagation Delay, Clock to SQH (Figures 1 and 5) 2.0 4.5 6.0 150 30 26 190 38 33 225 45 38 ns tPLH, tPHL Maximum Propagation Delay, Clock to QA-QH (Figures 2 and 5) 2.0 4.5 6.0 195 40 33 245 50 42 295 60 50 ns tPLZ, tPHZ Maximum Propagation Delay ,Output Enable to QA-QH (Figures 3 and 6) 2.0 4.5 6.0 125 25 21 155 31 26 190 38 32 ns tPZL, tPZH Maximum Propagation Delay ,Output Enable to QA-QH (Figures 3 and 6) 2.0 4.5 6.0 175 35 30 220 44 37 265 53 45 ns Maximum Input Capacitance - 10 10 10 pF Maximum Three-State Output Capacitance (Output in High-Impedance State), QA-QH - 15 15 15 pF Symbol fmax CIN COUT CPD Parameter Power Dissipation Capacitance (Per Package) Typical @25°C,VCC=5.0 V Used to determine the no-load dynamic power consumption: PD=CPDVCC2f+ICCVCC 300 pF TIMING REQUIREMENTS(CL=50pF,Input tr=tf=6.0 ns) Guaranteed Limit VCC Symbol V 25 °C to -55°C ≤85°C ≤125°C Unit tsu Minimum Setup Time, Serial Data Input A to Clock (Figure 4) 2.0 4.5 6.0 50 10 9.0 65 13 11 75 15 13 ns th Minimum Hold Time, Clock to Data Input A (Figure 4) 2.0 4.5 6.0 3 3 3 3 3 3 3 3 3 ns tw Minimum Pulse Width, Strobe (Figure 1) 2.0 4.5 6.0 80 16 14 100 20 17 120 24 20 ns Maximum Input Rise and Fall Times (Figure 1) 2.0 4.5 6.0 1000 500 400 1000 500 400 1000 500 400 ns tr, tf 518 Parameter IN74HC4094 Figure 1. Switching Waveforms Figure 2. Switching Waveforms Figure 3. Switching Waveforms Figure 4. Switching Waveforms Figure 5. Test Circuit Figure 6. Test Circuit 519 IN74HC4094 EXPANDED LOGIC DIAGRAM 520 IN74HC4094 TIMING DIAGRAM 521