PD - 93849C
IRF7702
PROVISIONAL
HEXFET® Power MOSFET
l
l
l
l
l
l
Ultra Low On-Resistance
-1.8V Rated
P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
VDSS
-12V
1
Description
RDS(on) max
ID
0.014@VGS = -4.5V
0.019@VGS = -2.5V
-8.0A
-7.0A
0.027@VGS = -1.8V
-5.8A
8
D
7
2
HEXFET®
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that International Rectifier is well known for, provides thedesigner
3
G
4
1=
2=
3=
4=
D
S
S
G
6
S
5
8=
7=
6=
5=
D
S
S
D
TSSOP-8
with an extremely efficient and reliable device for
battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-12
±8.0
±7.0
±70
1.5
0.96
0.01
± 8.0
-55 to + 150
V
W/°C
V
°C
Max.
Units
83
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambient
1
6/19/00
IRF7702
PROVISIONAL
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– –––
V
V GS = 0V, ID = -250µA
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.014
VGS = -4.5V, ID = -8.0A
Ω
––– ––– 0.019
VGS = -2.5V, ID = -7.0A
––– ––– 0.027
VGS = -1.8V, ID = -5.8A
-0.45 ––– -1.2
V
VDS = VGS, ID = -250µA
26 ––– –––
S
VDS = -10V, ID = -8.0A
––– ––– 1.0
VDS = -12V, VGS = 0V
µA
––– ––– -25
VDS = -9.6V, VGS = 0V, TJ = 70°C
––– ––– -100
VGS = -8.0V
nA
––– ––– 100
VGS = 8.0V
––– 54
81
ID = -8.0A
––– 7.8
12
nC
VDS = -9.6V
––– 15
23
VGS = -4.5V
––– 16 –––
VDD = -6.0V
ns
––– 21 –––
ID = -1.0A
––– 320 –––
RD = 6.0Ω
––– 250 –––
RG = 6.0Ω
––– 3470 –––
VGS = 0V
––– 1040 –––
pF
VDS = -10V
––– 670 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
-1.5
–––
–––
-70
–––
–––
–––
–––
58
41
-1.2
87
62
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.5A, VGS = 0V
TJ = 25°C, IF = -1.5A
di/dt = 100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
When mounted on 1 inch square copper board, t<10 sec
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRF7702
PROVISIONAL
1000
1000
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
VGS
-7.50V
-5.00V
-4.00V
-3.50V
-3.00V
-2.50V
-2.00V
BOTTOM -1.50V
TOP
TOP
100
100
10
-1.50V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
-1.50V
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
-VDS , Drain-to-Source Voltage (V)
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100.00
1000
-I SD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
T J = 25°C
100
TJ = 150 ° C
TJ = 25 ° C
2.0
2.5
3.0
1.00
3.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10.00
VGS = 0V
V DS = -15V
20µs PULSE WIDTH
10
1.5
T J = 150°C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-V SD , Source-toDrain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7702
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
4000
10
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
-VGS , Gate-to-Source Voltage (V)
5000
PROVISIONAL
Ciss
3000
2000
1000
Coss
Crss
ID = -8.0A
VDS =-9.6V
8
6
4
2
0
0
1
10
0
100
20
40
60
80
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0.80
1000
ID = -250µA
-II D , Drain Current (A)
-V GS(th) , Variace ( V )
OPERATION IN THIS AREA LIMITED
BY R DS(on)
0.60
100
0.40
1ms
10
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.20
-75
-50
-25
0
25
50
75
100 125
T J , Temperature ( °C )
Fig 7. Threshold Voltage Vs. Temperature
4
100us
150
1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7702
8.0
40
6.0
30
Power (W)
-ID , Drain Current (A)
PROVISIONAL
4.0
2.0
20
10
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
0
0.01
0.10
1.00
10.00
100.00
Time (sec)
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7702
ID = -8.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -4.5V
0
20
40
60
R DS (on) , Drain-to-Source On Resistance ( Ω)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
PROVISIONAL
80 100 120 140 160
0.16
0.12
VGS = -2.5V
0.08
VGS = -4.5V
0.04
0.00
0
TJ , Junction Temperature ( °C)
20
40
60
80
100
-I D , Drain Current (A)
Fig 12. Normalized On-Resistance
Vs. Temperature
R DS(on) , Drain-to -Source On Resistance ( Ω )
0.20
Fig 13. Typical On-Resistance Vs. Drain
Current
0.020
ID = -8.0A
0.015
0.010
1.5
2.5
3.5
-V GS, Gate -to -Source Voltage (V)
Fig 14. Typical On-Resistance Vs. Gate
Voltage
6
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IRF7702
PROVISIONAL
TSSOP-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7702
DAT E CODE (YW)
LOT CODE (XX)
PART NUMBER
T ABLE 1
XXYW
7702
WORK WEEK 1-26, NUMERIC YEAR CODE (1,2, ....ET C.)
DAT E CODE EXAMPLES :
9503 = 5C
9532 = EF
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
W
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
T ABLE 2
WORK WEEK 27-52, ALPHANUMERIC YEAR CODE (A,B, ...ETC.)
WORK
WEEK
YEAR
Y
2001
2002
2003
1994
1995
1996
1997
1998
1999
2000
A
B
C
D
E
F
G
H
J
K
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
TSSOP-8 Tape and Reel
8LT SSOP (MO-153AA)
Ø 13"
16 mm
16mm
8 mm
FEED DIRECT ION
NOT ES:
1. T APE & REEL OUT LINE CONFORMS T O EIA-481 & EIA-541.
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7
IRF7702
PROVISIONAL
TSSOP-8 Package Outline
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
8
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