IRF9240 IRF9240–SMD MECHANICAL DATA 25.15 (0.99) 26.67 (1.05) P–CHANNEL POWER MOSFET 6.35 (0.25) 9.15 (0.36) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) D G S 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) FEATURES TO–3 Package Pin 1 – Gate Pin 2 – Source 2 7 (0 8 (0 8 (0 8 (0 • AVAILABLE IN TO-3 (TO-204AA) AND CERAMIC SURFACE MOUNT PACKAGES 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) • HIGH VOLTAGE 3 .6 0 (0 .1 4 2 ) M a x . 3 9 .6 9 .3 1 1 .5 1 1 .2 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 Pin 1 – Gate • P–CHANNEL POWER MOSFET • INTEGRAL PROTECTION DIODE 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) Pin 3 – Drain Pin 2 – Source Note: IRFNxxxx also available with pins 1 and 3 reversed. Pin 3 – Drain TO–3 — TO–3 (TO–204AA) Metal Package TO–220 SM — TO–220 Ceramic Surface Mount Package ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS VDGR VGS ID IDM PD ILM Tj Tstg Semelab plc. Drain – Source Voltage Drain – Gate Voltage (RGS = 20KW) Gate – Source Voltage Continuous Drain Current @ Tcase = 25°C @ Tcase = 100°C Pulsed Drain Current Max. Power Dissipation @ Tcase = 25°C Linear Derating Factor (TO 3 package only) Inductive Current , Clamped Operating Junction and (TO 3 package only) Storage Temperature Range Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk –200V –200V ±20V –11A –7.0A –44A 125W 1W / °C –44A –55 to 150°C Prelim. 7/00 IRF9240 IRF9240–SMD ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) BVDSS Characteristic Drain – Source Breakdown Voltage VGS(TH) Gate Threshold Voltage IGSS IDSS Test Conditions VGS = 0V , ID = –250mA VDS = VGS , ID = –250mA Min. –200 Typ. –2 –100 nA VGS = 20V 100 nA VDS = Max. Rating , VGS = 0V –250 mA –1000 mA On State Drain Current 1 Static Drain – Source On-State Resistance Forward Transconductance 1 Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–on Delay Time td(off) tf V VGS = –20V gfs tr –4 Gate – Source Leakage Current (reverse) VDS = 0.8 x Max. Rating VGS = 0V , Tcase = 125°C RDS(ON) Unit V Gate – Source Leakage Current (forward) Zero Gate Voltage Drain Current ID(ON) Max. Rise Time Turn-off Delay Time Fall Time VDS > ID(ON) x RDS(ON) Max VGS = –10V –11 VGS = –10V , ID = –6A VDS > ID(ON) x RDS(ON) Max ID = –6A A 0.35 4 0.5 6 S VGS = 0V 1100 1300 VDS = –25V 375 450 f = 1MHz 150 250 VGS = –15V 70 90 ID = –22A 55 VDS = 0.8 x Max. Rating 15 VDD = 0.5 x BVDSS ID = –6A ZO = 4.7W W pF nC 20 30 10 15 12 18 8 12 ns LD Internal Drain Inductance 5.0 nH LS Internal Source Inductance 12.5 nH THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqCS Case to Sink RqJA Junction to Ambient TL Max. Lead Temperature 0.063 ” from case for 10 sec. SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Continuous Source Current (Body Diode) IS I Pulsed Source Current1 (Body Diode) Min. Typ. (TO-3 package only) (TO-3 package only) 0.1 Diode Forward Voltage2 trr Reverse Recovery Time Qrr Reverse Recovery Charge °C/W 30 (TO-3 package only) Test Conditions 300 Min. Typ. VGS = 0V , IS = – 11A Max. –11 –4.6 Tcase = 25°C IF = –11A , dlF / dt = 100A/ms Tj = 150°C IF = –11A , dlF / dt = 100A/ms Tj = 150°C °C/W °C –44 SM VSD Max. Unit 1.0 °C/W Unit A V 270 ns 2.0 mC 1) Pulse Test: Pulse Width < 300mS , Duty Cycle £ 2% 2) Repetitive Rating: Pulse Width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 7/00