SML50A15 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 VDSS 500V 14.7A ID(cont) Ω RDS(on) 0.300Ω 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 1 N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 – Gate Pin 2 – Source Case – Drain D • Faster Switching • Lower Leakage • TO–3 Hermetic Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 14.7 A IDM Pulsed Drain Current 1 58.8 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 155 W Derate Linearly 1.24 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 14.7 EAR Repetitive Avalanche Energy 1 EAS Single Pulse Avalanche Energy –55 to 150 30 2 960 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 8.89mH, RG = 25Ω, Peak IL = 14.7A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99 SML50A15 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250µA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 500 Typ. 2 Max. Unit V 14.7 µA A VGS = 10V , ID = 0.5 ID [Cont.] 0.300 Ω DYNAMIC CHARACTERISTICS Ciss Characteristic Input Capacitance Test Conditions VGS = 0V Coss Output Capacitance Crss Min. Typ. 2650 Max. Unit 3180 VDS = 25V 360 500 Reverse Transfer Capacitance f = 1MHz 150 225 Qg Total Gate Charge3 VGS = 10V 110 175 Qgs Gate – Source Charge VDD = 0.5 VDSS 19 30 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 45 70 td(on) Turn–on Delay Time VGS = 15V 10 20 tr Rise Time VDD = 0.5 VDSS 11 22 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 43 70 tf Fall Time RG = 1.6Ω 7 14 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 14.7 A 58.8 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs 410 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/µs 6.5 µC 1.3 V THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.80 °C/W 30 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] 6/99