IRF460 TO–3 (TO–204AA) Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 6.35 (0.25) 9.15 (0.36) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 – Gate Pin 2 – Source VDSS ID(cont) RDS(on) 500V 21A Ω 0.27Ω Case – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 21 A IDM Pulsed Drain Current 1 84 A VGS Gate – Source Voltage ±20 V Total Power Dissipation @ Tcase = 25°C 300 W PD Derate Linearly 2.4 W/°C TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. –55 to 150 °C 300 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 1mA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±20V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 250µA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 500 2 Typ. Max. Unit V 21 µA A VGS = 10V , ID = 13A 0.27 VGS = 10V , ID = 21A 0.31 Ω 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 11/98 IRF460 DYNAMIC CHARACTERISTICS Characteristic Test Conditions Ciss Input Capacitance VGS = 0V Min. 2890 Typ. Max. Unit Coss Output Capacitance VDS = 25V 590 Crss Reverse Transfer Capacitance f = 1MHz 230 Qg Total Gate Charge3 VGS = 10V 140 190 Qgs Gate – Source Charge VDD = 0.5 VDSS 18 27 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 75 135 td(on) Turn–on Delay Time VGS = 15V 19 35 tr Rise Time VDD = 0.5 VDSS 43 120 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 85 130 tf Fall Time RG = 1.8Ω 56 98 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 21 A 84 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] 1.8 V trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs 580 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/µs 8.1 µC THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.42 °C/W 30 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail [email protected] Website http://www.semelab.co.uk Prelim. 11/98