IRFJ240 MECHANICAL DATA Dimensions in mm (inches) 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 14.48 (0.570) 14.99 (0.590) 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 1 24.13 (0.95) 24.63 (0.97) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. VDSS ID(cont) RDS(on) 200V 13A Ω 0.18Ω FEATURES • HERMETICALLY SEALED TO-66 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO-66 METAL PACKAGE (TO213AA) • SCREENING OPTIONS AVAILABLE Underside View Pin 1 = Gate Pin 2 = Source Case = Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 13A ID Continuous Drain Current @ Tcase = 100°C 8A IDM Pulsed Drain Current 50A PD Power Dissipation @ Tcase = 25°C 70W Linear Derating Factor 0.56W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RθJC Thermal Resistance Junction to Case 1.8°C/W max. RθJA Thermal Resistance Junction to Ambient 50°C/W max. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5265 Issue 1 IRFJ240 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage VGS = 0 ΔBVDSS Temperature Coefficient of ΔTJ RDS(on) ID = 250μA Min. Typ. Max. 200 Reference to 25°C V 1.42 Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 7A* VDS = VGS ID = 250μA 2 VDS ≥ ID x RDS(on) ID = 7A* 6 0.14 V / °C 0.18 Resistance VGS(th) Gate Threshold Voltage 4 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 1275 Coss Output Capacitance VDS = 25V 500 Crss Reverse Transfer Capacitance f = 1MHz 160 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 13 ISM Pulse Source Current 50 VSD Diode Forward Voltage trr Reverse Recovery Time IF = 13A Qrr Reverse Recovery Charge di / dt ≤ 100A/μs VDD ≤ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance VGS = 0 VGS = 10V 250 TJ = 125°C 1000 VDS = 0.8BVDSS 43 ID = 7A Z0 = 4.7Ω 30 27 60 40 80 31 60 TJ = 25°C (from 6mm down drain lead pad to centre of die) (from 6mm down source lead to centre of source bond pad) 5.0 12.5 μA nA nC 16 VGS = 0 V (Ω) S(Ω 60 16 TJ = 25°C Ω pF 27 VDD = 75V IS = 13A 9 VDS = 0.8BVDSS ID = 16A Unit ns A 2 V 650 ns 4.1 μC nH * Pulse width ≤ 300μs; Duty Cycle ≤ 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5265 Issue 1