KERSEMI IRFRU3707PBF

PD - 95019A
IRFR3707PbF
IRFRU3707PbF
SMPS MOSFET
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l
l
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
30V
13mΩ
61A„
High Frequency Buck Converters for
Computer Processor Power
Lead-Free
Benefits
l
Ultra-Low RDS(on)
l
Very Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3707
I-Pak
IRFU3707
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 20
61 „
51 „
244
87
61
0.59
-55 to + 175
V
V
A
W
W
mW/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
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Typ.
Max.
Units
–––
–––
–––
1.73
50
110
°C/W
1
12/13/04
IRFR/U3707PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.027
9.7
13.2
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
13
VGS = 10V, ID = 15A ƒ
mΩ
17.5
VGS = 4.5V, ID = 12A ƒ
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 24V, VGS = 0V
µA
100
VDS = 24V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
37
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
19
8.2
6.3
18
8.5
78
11.8
3.3
1990
707
50
Max. Units
Conditions
–––
S
VDS = 15V, ID = 49.6A
–––
ID = 24.8A
–––
nC
VDS = 15V
–––
VGS = 4.5V ƒ
27
VGS = 0V, VDS = 15V
–––
VDD = 15V
–––
ID = 24.8A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
213
61
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
––– 61„
–––
–––
244
–––
–––
–––
–––
–––
–––
0.88
0.8
39
49
42
62
1.3
–––
59
74
63
93
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 31A, VGS = 0V ƒ
TJ = 125°C, IS = 31A, VGS = 0V ƒ
TJ = 25°C, I F = 31A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs ƒ
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IRFR/U3707PbF
1000
1000
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
VGS
10.0V
9.0V
8.0V
7.0V
6.0V
5.0V
4.5V
BOTTOM 3.5V
100
3.5V
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
3.5V
10
20µs PULSE WIDTH
Tj = 175°C
20µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 175 ° C
100
V DS = 15V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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100
Fig 2. Typical Output Characteristics
1000
4.0
10
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
3.0
1
ID = 61A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFR/U3707PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
2500
Ciss
2000
1500
Coss
1000
500
10
ID = 24.8A
VDS = 15V
VGS , Gate-to-Source Voltage (V)
3000
8
6
4
2
Crss
0
0
1
10
0
100
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD , Reverse Drain Current (A)
20
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
TJ = 175 ° C
10us
100
10
TJ = 25 ° C
1
100us
1ms
10
10ms
0.1
0.2
TC = 25 ° C
TJ = 175° C
Single Pulse
V GS = 0 V
0.6
1.0
1.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
1.8
1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFR/U3707PbF
RD
VDS
70
LIMITED BY PACKAGE
VGS
60
D.U.T.
I D , Drain Current (A)
RG
+
-VDD
50
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to -Source On Resistance ( Ω)
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
IRFR/U3707PbF
0.10
0.09
VGS = 4.5V
0.08
0.07
0.06
0.05
0.04
VGS = 10V
0.03
0.02
0.01
0.00
0
50
100
150
200
0.013
0.012
0.011
ID = 31A
0.010
0.009
4.0
250
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
600
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveforms
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
tp
I AS
DRIVER
+
- VDD
0.01Ω
Fig 15a&b. Unclamped Inductive Test Circuit
and Waveforms
6
A
ID
10.1A
20.7A
BOTTOM 24.8A
TOP
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRFR/U3707PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WIT H ASS EMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN T HE ASS EMBLY LINE "A"
PART NUMBER
INTERNAT IONAL
RECTIF IER
LOGO
Note: "P" in as sembly line position
indicates "Lead-Free"
IRFU120
12
916A
34
ASS EMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INTERNAT IONAL
RECTIF IER
LOGO
IRFU120
12
ASS EMBLY
LOT CODE
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34
DATE CODE
P = DES IGNATES LEAD-F REE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = ASS EMBLY SIT E CODE
7
IRFR/U3707PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120
WIT H ASSEMBLY
LOT CODE 5678
AS SEMBLED ON WW 19, 1999
IN T HE ASSEMBLY LINE "A"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
919A
56
78
ASS EMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
56
AS SEMBLY
LOT CODE
8
78
DAT E CODE
P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS SEMBLY SIT E CODE
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IRFR/U3707PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 0.7 mH
RG = 25Ω, IAS = 24.8 A.
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ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
9