PD- 95238 IRGP30B120KD-EP Motor Control Co-Pack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE(on) Non Punch Through (NPT) Technology • Low Diode VF (1.76V Typical @ 25A & 25°C) • 10 µs Short Circuit Capability • Square RBSOA • Ultrasoft Diode Recovery Characteristics • Positive VCE(on) Temperature Coefficient • Extended Lead TO-247AD Package • Lead-Free VCES = 1200V VCE(on) typ. = 2.28V G VGE = 15V, IC = 25A, 25°C E N-channel n-channel Benefits • Benchmark Efficiency for Motor Control Applications • Rugged Transient Performance • Low EMI • Significantly Less Snubber Required • Excellent Current Sharing in Parallel Operation • Longer leads for Easier Mounting TO-247AD Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current (Fig.1) Continuous Collector Current (Fig.1) Pulsed Collector Current (Fig.3, Fig. CT.5) Clamped Inductive Load Current(Fig.4, Fig. CT.2) Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (Fig.2) Maximum Power Dissipation (Fig.2) Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw. Max. Units 1200 60 30 120 120 30 120 ± 20 300 120 -55 to + 150 V A V W °C 300, (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt ZθJC www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Transient Thermal Impedance Junction-to-Case (Fig.24) Min. Typ. Max. ––– ––– ––– ––– ––– ––– ––– 0.24 ––– 6 (0.21) 0.42 0.83 ––– 40 ––– Units °C/W g (oz) 1 7/27/04 IRGP30B120KD-EP Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)CES Collector-to-Emitter Breakdown Voltage Min. 1200 ∆V(BR)CES / ∆Tj Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation VCE(on) Voltage VGE(th) Gate Threshold Voltage ∆VGE(th) / ∆Tj Temperature Coeff. of Threshold Voltage gfe Forward Transconductance ICES Zero Gate Voltage Collector Current VFM IGES 4.0 14.8 Typ. +1.2 2.28 2.46 3.43 2.74 2.98 5.0 - 1.2 16.9 325 1.76 1.86 1.87 2.01 Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Max. Units V V/°C 2.48 2.66 4.00 V 3.10 3.35 6.0 V Conditions Fig. VGE = 0V,Ic =250 µA VGE = 0V, Ic = 1 mA ( 25 -125 oC ) IC = 25A, VGE = 15V 5, 6 IC = 30A, VGE = 15V 7, 9 IC = 60A, VGE = 15V 10 IC = 25A, VGE = 15V, TJ = 125°C 11 IC = 30A, VGE = 15V, TJ = 125°C VCE = VGE, IC = 250 µA 9 ,1 0 ,1 1 ,1 2 o o mV/ C VCE = VGE, IC = 1 mA ( 25 -125 C ) 19.0 250 675 2000 2.06 2.17 2.18 2.40 ±100 S VCE = 50V, IC = 25A, PW=80µs VGE = 0V,VCE = 1200V µA VGE = 0v, VCE = 1200V, TJ =125°C VGE = 0v, VCE = 1200V, TJ =150°C IC = 25A V IC = 30A 8 IC = 25A, TJ = 125°C IC = 30A, TJ = 125°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qgc Gate - Collector Charge (turn-on) Eon Turn-On Switching Loss Eoff Turn-Off Switching Loss Typ. 169 19 82 1066 1493 Etot Total Switching Loss 2559 3050 Eon Turn-on Switching Loss Eoff Turn-off Switching Loss 1660 2118 1856 2580 Qg Total Gate charge (turn-on) Qge Gate - Emitter Charge (turn-on) Min. Max. Units Conditions IC = 25A 254 29 nC VCC =600V VGE = 15V 123 IC = 25A, VCC = 600V 1250 1800 µJ VGE = 15V, Rg = 5Ω, L =200µH Fig. 23 CT 1 CT 4 WF1 o TJ = 25 C, Energy losses include tail and diode reverse recovery Ic =25A, VCC=600V µJ WF2 13, 15 VGE = 15V, Rg = 5Ω, L =200µH CT 4 o Etot Total Switching Loss 3778 4436 td(on) Turn - on delay time tr Rise time td(off) Turn - off delay time tf Fall time 65 35 230 75 Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance 50 25 210 60 2200 210 85 TJ = 125 C, Energy losses include tail and diode reverse recovery Ic =25A, VCC=600V ns 14, 16 VGE = 15V, Rg = 5Ω, L =200µH CT 4 TJ = 125oC, WF1 WF2 VGE = 0V pF VCC = 30V 22 f = 1.0 MHz TJ =150oC, Ic = 120A RBSOA Reverse bias safe operating area WF1 & 2 4 VCC = 1000V, VP = 1200V FULL SQUARE CT 2 Rg = 5Ω, VGE = +15V to 0 V o SCSOA Short Circuit Safe Operating Area Erec Reverse recovery energy of the diode trr Diode Reverse recovery time Irr Peak Reverse Recovery Current Le Internal Emitter Inductance 10 ---- ---- µs TJ = 150 C VCC = 900V,VP = 1200V CT 3 WF4 Rg = 5Ω, VGE = +15V to 0 V 2 1820 300 34 13 2400 38 µJ ns A nH TJ = 125oC VCC = 600V, Ic = 25A 1 7 ,1 8 ,1 9 20, 21 VGE = 15V, Rg = 5Ω, L =200µH CT 4 , WF3 Measured 5 mm from the package. www.irf.com IRGP30B120KD-EP Fig.1 - Maximum DC Collector Current vs. Case Temperature Fig.2 - Power Dissipation vs. Case Temperature 70 320 60 280 240 50 (W) 200 tot C (A) 40 160 P I 30 120 20 80 10 40 0 0 0 40 80 120 160 0 40 80 120 160 T C (°C) T C (°C) Fig.3 - Forward SOA T C =25°C; Tj < 150°C Fig.4 - Reverse Bias SOA Tj = 150°C, V GE = 15V 1000 1000 PULSED 2µs 100 10µ s 100 (A) I 1ms I C 10 C (A) 100µ s 10 1 10ms DC 0.1 1 1 www.irf.com 10 100 V CE (V) 1000 10000 1 10 100 V CE (V) 1000 10000 3 IRGP30B120KD-EP Fig.6 - Typical IGBT Output Characteristics Tj=25°C; tp=300µs Fig.5 - Typical IGBT Output Characteristics Tj= -40°C; tp=300µs 60 60 V GE = 18V 55 V GE = 15V 50 V GE = 12V V GE = 12V 45 V GE = 10V 40 40 V GE = 8V 35 35 (A) V GE = 8V 30 C 30 C (A) V GE = 15V 50 V GE = 10V 45 25 I I V GE = 18V 55 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 V CE (V) 5 0 6 Fig.7 - Typical IGBT Output Characteristics Tj=125°C; tp=300µs 60 55 45 V GE = 10V 45 40 V GE = 8V 40 (A) 35 30 6 35 30 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 V CE (V) 4 5 F 25 I I C (A) 50 V GE = 12V 3 4 V CE (V) - 40°C 25°C 125°C 55 V GE = 15V 50 2 Fig.8 - Typical Diode Forward Characteristic tp=300µs 60 V GE = 18V 1 4 5 6 0 1 2 V F (V) 3 4 www.irf.com IRGP30B120KD-EP Fig.10 - Typical V CE vs V GE Tj= 25°C 20 20 18 18 16 16 14 14 12 12 10 V CE ( V ) V CE (V) Fig.9 - Typical V CE vs V GE Tj= -40°C I CE =10A I CE =25A I CE =50A 8 10 I CE =10A I CE =25A I CE =50A 8 6 6 4 4 2 2 0 0 6 8 10 12 14 16 18 20 6 V GE (V) 12 14 V GE (V) 16 18 20 18 225 16 200 14 175 12 150 Tj=25°C Tj=125°C (A) 250 125 C I CE =10A I CE =25A I CE =50A I V CE ( V ) 20 8 10 Fig.12 - Typ. Transfer Characteristics V CE =20V; tp=20µs Fig.11 - Typical V CE vs V GE Tj= 125°C 10 8 100 6 75 4 50 2 25 0 0 Tj=125°C Tj=25°C 6 www.irf.com 8 10 12 14 V GE (V) 16 18 20 0 4 8 12 V GE (V) 16 20 5 IRGP30B120KD-EP Fig.13 - Typical Energy Loss vs Ic Tj=125°C; L=200µH; V CE =600V; Rg=22 Ω ; V GE =15V Fig.14 - Typical Switching Time vs Ic Tj=125°C; L=200µH; V CE =600V; Rg=22 Ω ;V GE =15V 8000 1000 Eon 7000 tdoff Eoff 5000 t (nS) Energy (µJ) 6000 4000 tf tr 100 3000 tdon 2000 1000 0 10 0 10 20 30 40 50 0 60 10 30 40 50 60 I C (A) I C (A) Fig.15 - Typical Energy Loss vs Rg Tj=125°C; L=200µH; V CE =600V; I CE =25A; V GE =15V 3500 20 Fig.16 - Typical Switching Time vs Rg Tj=125°C; L=200µH; V CE =600V; I CE =25A; V GE =15V 1000 Eon 3300 tdoff 3100 2700 Eoff 2500 t (nS) Energy (uJ) 2900 tdon 100 2300 tr tf 2100 1900 1700 1500 10 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) 6 0 5 10 15 20 25 30 35 40 45 50 55 Rg (ohms) www.irf.com IRGP30B120KD-EP Fig.18 - Typical Diode I RR vs Rg Tj=125°C; I F =25A Fig.17 - Typical Diode I RR vs I F Tj=125°C 45 45 40 40 35 35 Rg=5 Ω 30 25 I RR ( A ) IRR ( A ) 30 25 Rg=10 Ω 20 20 Rg=22 Ω 15 15 Rg=51 Ω 10 10 5 5 0 0 0 10 20 30 I F (A) 40 50 0 60 10 15 20 25 30 35 40 45 50 55 Rg (ohms) Fig.19 - Typical Diode I RR vs dI F /dt Fig.20 - Typical Diode Q RR V CC =600V; V GE =15V V CC =600V; V GE =15V; Tj=125°C I F =25A; Tj=125°C 45 5 7000 40 22 Ω 6500 Rg=5 Ω 35 51 Ω 6000 30 10 Ω 40A 30A QRR ( n C ) (A) 5500 25 5000 RR Rg=10 Ω 25A 4500 I 20 Rg=22 Ω 15 3500 5 3000 0 2500 0 www.irf.com 500 1000 dI F / dt (A/µs) 20A 4000 Rg=51 Ω 10 5Ω 50A 1500 0 500 1000 1500 dI F / dt (A/µs) 7 IRGP30B120KD-EP Fig.21 - Typ. Diode E rec vs. I F Tj=125°C 2400 5Ω 2200 10 Ω 22 Ω 2000 Energy (uJ) 51 Ω 1800 1600 1400 1200 1000 800 0 10 20 30 I F (A) 40 50 60 Fig.23 - Typ. Gate Charge vs. V GE I C =25A; L=600µH Fig.22 - Typical Capacitance vs V CE V GE =0V; f=1MHz 16 10000 600V 14 C ies 800V 1000 10 V GE ( V ) CapacItance (pF) 12 C oes 8 6 100 4 C res 2 0 10 0 20 40 60 V CE (V) 8 80 100 0 40 80 120 160 200 Q G , Total Gate Charge (nC) www.irf.com IRGP30B120KD-EP Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case θ 10 1 D =0.5 0.2 0.1 0.1 0.05 P DM 0.02 t1 0.01 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + T C SINGLE PULSE 0.001 0.00001 0.00010 0.00100 0.01000 0.10000 1.00000 10.00000 t 1 , Rectangular Pulse Duration (sec) www.irf.com 9 IRGP30B120KD-EP Fig. CT.1 - Gate Charge Circuit (turn-off) Fig. CT.2 - RBSOA Circuit L L VCC DUT 80 V DUT 1000V 0 Rg 1K Fig. CT.4 - Switching Loss Circuit Fig. CT.3 - S.C. SOA Circuit diode clamp / DUT Driver D C L 900V - 5V DUT / DRIVER DUT VCC Rg Fig. CT.5 - Resistive Load Circuit R= DUT VCC ICM VCC Rg 10 www.irf.com IRGP30B120KD-EP Fig. WF.1 - Typ. Turn-off Loss Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.2 - Typ. Turn-on Loss Waveform @ Tj=125°C using Fig. CT.4 800 40 900 45 700 35 800 40 600 30 700 35 TEST CURRENT 90% ICE 25 400 20 600 30 15 200 10 V CE ( V ) V 300 I CE ( A ) tf CE (V) 500 25 90% test current 400 20 tr 300 5% VCE ICE ( A ) 500 15 10% test current 200 10 5% VCE 100 5 5% ICE 100 0 0 5 0 0 Eoff Loss -100 -0.5 Eon Loss -5 0.0 0.5 1.0 1.5 2.0 2.5 -100 -5 4.0 4.1 4.2 t I me (µs) 4.3 4.4 4.5 t I me (µs) Fig. WF.3 - Typ. Diode Recovery Waveform @ Tj=125°C using Fig. CT.4 Fig. WF.4 - Typ. S.C. Waveform @ TC=150°C using Fig. CT.3 30 1200 250 20 1000 200 -400 10 800 150 -600 0 600 100 -10 400 50 -20 200 0 -30 0 0 -200 QRR 10% Peak IRR -800 ICE ( A ) V CE ( V ) I C E( A ) V C E( V ) tRR Peak IRR -1000 -1200 -0.5 0.0 0.5 t I me (µS) www.irf.com 1.0 -50 -10 0 10 20 30 t i me (µs) 11 IRGP30B120KD-EP TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information EXAMPLE: THIS IS AN IRGP30B120KD-E WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE ASS EMBLY LINE "H" Note: "P" in as s embly line pos ition indicates "Lead-Free" PART NUMBER INTERNATIONAL RECTIF IER LOGO 56 AS SEMBLY LOT CODE 035H 57 DATE CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 12 www.irf.com