PD 9.1375
IRL2910
PRELIMINARY
HEXFET ® Power MOSFET
Logic-Level Gate Drive
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
VDSS = 100V
RDS(on) = 0.026 Ω
ID = 48A
Description
Fifth Generation HEXFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design for which HEXFET
Power MOSFETs are well known, provides the designer with an
extremely efficient and reliable device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately
50 watts. The low thermal resistance and low package cost of the
TO-220 contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter
ID @ T C = 25°C
ID @ T C = 100°C
IDM
PD @T C = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
48
34
190
150
1.0
± 20
520
29
15
7.4
-55 to + 175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.50
–––
1.0
–––
62
°C/W
°C/W
°C/W
IRL2910
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
–––
–––
1.0
28
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
IGSS
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
100
49
55
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.026
VGS = 10V, I D = 29A
0.030
Ω
VGS = 5.0V, I D = 29A
0.040
VGS = 4.0V, I D = 24A
2.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 29A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, T J = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
140
ID = 29A
20
nC
VDS = 80V
81
VGS = 5.0V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 29A
ns
–––
RG = 1.4Ω, VGS = 5.0V
–––
RD = 1.7Ω, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH from package
7.5 –––
and center of die contact
3700 –––
VGS = 0V
630 –––
pF
VDS = 25V
330 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
48
–––
–––
190
–––
–––
–––
–––
240
1.8
1.3
350
2.7
A
V
ns
µC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C, I S = 29A, V GS = 0V
TJ = 25°C, I F = 29A
di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ISD ≤ 29A, di/dt ≤ 490A/µs, V DD ≤ V(BR)DSS,
T J ≤ 175°C
VDD = 25V, starting T J = 25°C, L = 1.2mH
R G = 25Ω, IAS = 29A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRL2910
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
100
10
2.5V
20µs PULSE WIDTH
T J = 25°C
1
0.1
1
10
100
10
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
V DS = 50V
20µs PULSE WIDTH
2.5
3.0
3.5
4.0
4.5
5.0
5.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1
10
A
100
Fig 2. Typical Output Characteristics,
TJ = 175oC
1000
1
20µs PULSE WIDTH
T J = 175°C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
TJ = 25oC
100
2.5V
1
0.1
A
100
VDS , Drain-to-Source Voltage (V)
2.0
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
TOP
6.0
A
I D = 48A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
A
80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2910
6000
VGS , Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
Ciss C oss = C ds + C gd
4000
3000
Coss
2000
Crss
1000
0
10
V DS = 80V
V DS = 50V
V DS = 20V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
1
I D = 29A
0
100
80
120
160
A
200
Q G , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
40
100
TJ = 175°C
TJ = 25°C
10µs
100
100µs
1ms
10
10ms
VGS = 0V
10
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.0
T C = 25°C
T J = 175°C
Single Pulse
1
1
A
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
IRL2910
RD
VDS
50
VGS
D.U.T.
RG
VDD
ID, Drain Current (Amps)
40
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
10
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 10b. Switching Time Waveforms
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PD M
0.1
0.10
t
0.05
1
t
0.02
0.01
0.01
0.00001
N otes:
1 . D uty fac tor D = t
SINGLE PULSE
(THERMAL RESPONSE)
1
/ t
2
2
2. P ea k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
10
15V
L
V DS
DRIVER
D.U.T
RG
+
V
- DD
IAS
20V
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V (BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
IRL2910
1400
ID
12A
20A
BOTTOM 29A
TOP
1200
1000
800
600
400
200
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
5.0 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
IRL2910
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
RG
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRL2910
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
3.78 (.149)
3.54 (.139)
-A-
-B4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
1.15 (.045)
MIN
1
2
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
3
1.40 (.055)
1.15 (.045)
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
Part Marking Information
TO-220AB
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
LOT CODE 9B1M
A
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRF1010
9246
9B 1M
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
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Data and specifications subject to change without notice. 11/95