PD - 97607A IRLHS6376PbF HEXFET® Power MOSFET 30 V VGS ±12 V RDS(on) max 63 mΩ ' S2 ' G2 D1 D1 D2 * D2 6 A 7 )( d ' 3.4 7 )( (@Tc(Bottom) = 25°C) mΩ ' ID 82 * RDS(on) max (@VGS = 2.5V) 6 (@VGS = 4.5V) : ,( 9 3 2 7 VDS G1 S1 2mm x 2mm Dual PQFN Applications • Charge and discharge switch for battery application • Load/System Switch Features and Benefits Features Low RDSon (≤ 63mΩ) Low Thermal Resistance to PCB (≤ 19°C/W) Low Profile (≤ 1.0mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen Orderable part number Package Type IRLHS6376TRPBF IRLHS6376TR2PBF PQFN Dual 2mm x 2mm PQFN Dual 2mm x 2mm Resulting Benefits Lower Conduction Losses Enable better thermal dissipation results in Increased Power Density ⇒ Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage VGS ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V ±12 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 4.5V 2.9 7.6 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 4.5V ID @ TC(Bottom) = 25°C IDM Continuous Drain Current, VGS @ 4.5V (Package Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C f Power Dissipation f TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range 30 V d d d 3.4d 4.9 A 30 1.5 f Units 6.6 0.012 -55 to + 150 W W/°C °C Notes through are on page 2 www.irf.com 1 07/19/11 IRLHS6376PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. 30 ––– ––– Breakdown Voltage Temp. Coefficient ––– 0.023 ––– Static Drain-to-Source On-Resistance ––– 48 63 ––– 61 82 BVDSS Drain-to-Source Breakdown Voltage ΔΒVDSS/ΔTJ RDS(on) Max. Units V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -3.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Qg Forward Transconductance 8.8 ––– ––– Total Gate Charge ––– 2.8 ––– IGSS h h h Qgs Gate-to-Source Charge ––– 0.13 ––– Qgd Gate-to-Drain Charge ––– 1.1 ––– RG td(on) Gate Resistance Turn-On Delay Time ––– ––– 4.6 4.4 ––– ––– tr Rise Time ––– 11 ––– td(off) Turn-Off Delay Time ––– 11 ––– tf Fall Time ––– 9.4 ––– Ciss Input Capacitance ––– 270 ––– Coss Output Capacitance ––– 32 ––– Crss Reverse Transfer Capacitance ––– 20 ––– Min. Typ. Conditions VGS = 0V, ID = 250μA μA nA VGS = 4.5V, ID = 3.4A VGS = 2.5V, ID = 3.4A ed ed VDS = VGS, ID = 10μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 12V VGS = -12V d S VDS = 10V, ID = 3.4A VDS = 15V nC VGS = 4.5V d (See Fig.17 & 18) ID = 3.4A Ω ns VDD = 10V, VGS = 4.5V ID = 3.4A d RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 25V ƒ = 1.0MHz Diode Characteristics Parameter IS Continuous Source Current Max. Units d ––– ––– ––– ––– 30 Diode Forward Voltage ––– ––– 1.2 trr Reverse Recovery Time ––– 8.0 12 ns Qrr Reverse Recovery Charge ––– 5.9 8.9 nC ton Forward Turn-On Time ISM VSD (Body Diode) Pulsed Source Current (Body Diode)c Conditions MOSFET symbol 7.6 A V D showing the integral reverse G p-n junction diode. TJ = 25°C, IS = 3.4A , VGS = 0V TJ = 25°C, IF = 3.4A , VDD = 15V di/dt = 260A/μs e d d S e Time is dominated by parasitic Inductance Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) g g Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter f f Typ. ––– ––– ––– ––– Max. 19 175 86 69 Units °C/W Notes: Repetitive rating; pulse width limited by max. junction temperature. Current limited by package. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at T J of approximately 90°C. For DESIGN AID ONLY, not subject to production testing. 2 www.irf.com IRLHS6376PbF 100 100 10 BOTTOM 1 1.4V 0.1 ≤60μs PULSE WIDTH TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V 10 BOTTOM 1 1.4V ≤60μs PULSE WIDTH Tj = 25°C Tj = 150°C 0.01 0.1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 TJ = 150°C 1 T J = 25°C VDS = 15V ≤60μs PULSE WIDTH 0.1 ID = 7.6A VGS = 4.5V 1.6 1.4 1.2 1.0 0.8 0.6 0.0 1.0 2.0 3.0 4.0 5.0 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 3.4A C oss = C ds + C gd 1000 Ciss Coss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 4.5V 3.0V 2.5V 2.0V 1.8V 1.5V 1.4V Crss 10 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 1 2 3 4 5 6 7 8 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRLHS6376PbF 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 T J = 150°C T J = 25°C 1 OPERATION IN THIS AREA LIMITED BY R DS(on) 100μsec 10 1msec Limited by Wire Bond 1 DC Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.4 0.8 1.2 1.6 0 VSD, Source-to-Drain Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 1.1 7 VGS(th) , Gate threshold Voltage (V) 8 ID, Drain Current (A) 10msec Limited By Package 6 5 4 3 2 1 1.0 0.9 0.8 0.7 ID = 10μA 0.6 0.5 0.4 0.3 0.2 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Thermal Response ( Z thJC ) °C/W 100 10 D = 0.50 0.20 0.10 1 0.05 0.02 0.01 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 140 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) IRLHS6376PbF ID = 3.4A 120 100 TJ = 125°C 80 60 TJ = 25°C 40 0 2 4 6 8 10 250 VGS = 2.5V 200 150 100 VGS = 4.5V 50 0 12 0 5 10 15 20 25 30 ID, Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 13. Typical On-Resistance vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 400 50 ID TOP 0.78A 1.6A BOTTOM 3.4A 40 Single Pulse Power (W) EAS , Single Pulse Avalanche Energy (mJ) 300 30 20 10 0 25 50 75 100 125 300 200 100 0 1E-5 150 1E-4 Starting T J , Junction Temperature (°C) Driver Gate Drive - - P.W. P.W. Period D.U.T. ISD Waveform Reverse Recovery Current + • dv/dt controlled by R G • Driver same type as D.U.T. • I SD controlled by Duty Factor "D" • D.U.T. - Device Under Test D= Period * RG 1E+0 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - 1E-1 Fig 15. Typical Power vs. Time + + 1E-2 Time (sec) Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T 1E-3 V DD + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices www.irf.com Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 5 IRLHS6376PbF Id Vds Vgs L VCC DUT 0 1K Vgs(th) S Qgs1 Qgs2 Qgd Qgodr Fig 17b. Gate Charge Waveform Fig 17a. Gate Charge Test Circuit V(BR)DSS 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V tp A I AS 0.01Ω tp Fig 18a. Unclamped Inductive Test Circuit V DS VGS RG RD VDS 90% D.U.T. + -V DD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 19a. Switching Time Test Circuit 6 Fig 18b. Unclamped Inductive Waveforms 10% VGS td(on) tr td(off) tf Fig 19b. Switching Time Waveforms www.irf.com IRLHS6376PbF PQFN Dual 2x2 Outline Package Details For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN Dual 2x2 Outline Part Marking 6376 Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRLHS6376PbF PQFN Dual 2x2 Outline Tape and Reel 8 www.irf.com IRLHS6376PbF Qualification information† Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F PQFN Dual 2mm x 2mm †† ††† guidelines ) MS L1 ††† (per JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/11 www.irf.com 9