PD - 97547A IRFHM830PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = 10V) Qg (typical) 30 V 3.8 mΩ 15 2.5 RG (typical) ID nC Ω 40h (@Tc(Bottom) = 25°C) D 5 4 G D 6 3 S D 7 2 S D 8 1 S 3.3mm x 3.3mm PQFN A Applications • Battery Operated DC Motor Inverter MOSFET Features and Benefits Features Low RDSon (<3.8mΩ) Low Thermal Resistance to PCB (<3.4°C/W) 100% Rg tested Low Profile (<1.0mm) results in ⇒ Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1,Industrial Qualification Orderable part number IRFHM830TRPBF IRFHM830TR2PBF Package Type PQFN 3.3mm x 3.3mm PQFN 3.3mm x 3.3mm Benefits Lower Conduction Losses Enable better thermal dissipation Increased Reliability Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Tape and Reel 400 Note Absolute Maximum Ratings VDS VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC(Bottom) = 25°C ID @ TC(Bottom) = 100°C IDM PD @TA = 25°C PD @ TC(Bottom) = 25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range g g c g Max. 30 ±20 21 17 40 40 h h 160 2.7 37 0.022 -55 to + 150 Units V A W W/°C °C Notes through are on page 8 www.irf.com 1 09/09/2010 IRFHM830PbF Static @ TJ = 25°C (unless otherwise specified) Output Charge Min. 30 ––– ––– ––– 1.35 ––– ––– ––– ––– ––– 52 ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.02 3.0 4.8 1.8 -6.3 ––– ––– ––– ––– ––– 31 15 3.8 2.0 5.0 4.2 7.0 9.7 Conditions Max. Units ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 3.8 VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 20A 6.0 2.35 V VDS = VGS, ID = 50µA ––– mV/°C 1.0 VDS = 24V, VGS = 0V µA VDS = 24V, VGS = 0V, TJ = 125°C 150 VGS = 20V 100 nA -100 VGS = -20V ––– S VDS = 15V, ID = 20A ––– nC VGS = 10V, VDS = 15V, ID = 20A 23 VDS = 15V ––– ––– VGS = 4.5V nC ID = 20A ––– ––– See Fig.17 & 18 ––– ––– nC VDS = 16V, VGS = 0V Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– ––– ––– ––– ––– 2.5 12 25 13 9.2 2155 350 160 ––– ––– ––– ––– ––– ––– ––– ––– BVDSS ∆ΒVDSS/∆TJ RDS(on) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance VGS(th) ∆VGS(th) IDSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) gfs Qg Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss e e Ω ns pF VDD = 15V, VGS = 4.5V ID = 20A RG=1.8Ω See Fig.15 VGS = 0V VDS = 25V ƒ = 1.0MHz Avalanche Characteristics EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Diode Characteristics IS ISM VSD trr Qrr ton c Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. h ––– ––– c ––– Max. Units 40 A ––– 160 Units mJ A Max. 82 20 Typ. ––– ––– d Conditions MOSFET symbol showing the integral reverse D G S p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 300A/µs ––– ––– 1.0 V ––– 17 26 ns ––– 23 35 nC Time is dominated by parasitic Inductance e e Thermal Resistance RθJC (Bottom) RθJC (Top) RθJA RθJA (<10s) 2 f f Junction-to-Case Junction-to-Case Junction-to-Ambient Junction-to-Ambient Parameter g g Typ. ––– ––– ––– ––– Max. 3.4 37 46 31 Units °C/W www.irf.com IRFHM830PbF 1000 1000 100 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V 100 10 2.8V ≤60µs PULSE WIDTH BOTTOM 10 2.8V ≤60µs PULSE WIDTH Tj = 25°C Tj = 150°C 1 1 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1000 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T J = 150°C 10 T J = 25°C 1 VDS = 15V ≤60µs PULSE WIDTH 0.1 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd Ciss 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS 10V 8.0V 4.5V 3.8V 3.5V 3.3V 3.0V 2.8V Coss Crss 100 12.0 VDS= 24V VDS= 15V VDS= 6.0V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 10 20 30 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFHM830PbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 T J = 150°C T J = 25°C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 100µsec 100 1msec 10msec DC 10 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1 1.0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 1 Fig 7. Typical Source-Drain Diode Forward Voltage 100 Fig 8. Maximum Safe Operating Area 3.0 70 VGS(th), Gate threshold Voltage (V) 80 ID, Drain Current (A) 10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Limited By Package 60 50 40 30 20 10 2.5 2.0 1.5 1.0 ID = 50µA ID = 250µA ID = 1.0mA ID = 1.0A 0.5 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 TJ , Temperature ( °C ) T C , Case Temperature (°C) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com 12 400 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFHM830PbF ID = 20A 10 8 6 T J = 125°C 4 T J = 25°C 2 ID 5.8A 11A BOTTOM 20A TOP 300 200 100 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit www.irf.com I AS 0.01Ω tp 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms 5 IRFHM830PbF D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 Qgd Qgodr Fig 18. Gate Charge Waveform www.irf.com IRFHM830PbF PQFN 3.3x3.3 Outline Package Details 8 1 7 2 6 3 5 4 For footprint and stencil design recommendations, please refer to application note AN-1154 at http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3x3.3 Outline Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER :::: !;99! ::::: PART NUMBER MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFHM830PbF PQFN 3.3x3.3 Outline Tape and Reel NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts. REEL DIMENSIONS STANDARD OPTION (QTY 4000) METRIC IMPERIAL MIN MIN MAX CODE MAX 326.0 330.25 12.835 13.002 A B 20.2 0.805 20.45 0.795 12.8 0.531 C 13.50 0.504 1.5 0.059 0.098 D 2.5 102.0 REF 4.016 REF E F 17.8 0.720 18.3 0.701 G 12.4 0.488 0.508 12.9 CODE A B C D E F G H DIMENSIONS METRIC IMPERIAL MIN MAX MIN MAX 7.90 8.10 0.311 0.319 3.90 4.10 0.154 0.161 11.70 12.30 0.461 0.484 5.45 5.55 0.215 0.219 3.50 3.70 0.138 0.146 3.50 3.70 0.138 0.146 0.010 0.014 0.25 0.35 1.10 1.30 0.043 0.051 Qualification Information† Qualification level Moisture Sensitivity Level RoHS Compliant Industrial †† (per JEDEC JESD47F††† guidelines) MSL1 PQFN 3.3mm x 3.3mm ††† (per JEDEC J-STD-020D ) Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.41mH, RG = 25Ω, IAS = 20A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continouous current based on maximum allowable junction temperature. Package is limited to 40A by production test capability. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/2010 8 www.irf.com