IS610X, IS611X IS610, IS611 PHOTON COUPLED BILATERAL ANALOG FET APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form DESCRIPTION The IS610, IS611 are optically coupled isolators consisting of infrared light emitting diode and a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level ac and dc analog signals.The IS610, IS611 are mounted in a standard 6pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. As a remote variable resistor l ≤100Ω to ≥300MΩ l ≥ 99.9% Linearity l ≤15 pF Shunt Capacitance l ≥100GΩ I/O Isolation Resistance As an Analog Signal Switch l Extremely low Offset Voltage l 60V pk-pk Signal Capability l No Charge Injection or Latchup l ton, toff ≤15µs APPLICATIONS As a remote variable resistor l Isolated variable attenuator l Automatic gain control l Active filter fine tuning / band switching OPTION SM OPTION G SURFACE MOUNT 1.2 0.6 10.2 9.5 1.4 0.9 8.3 max 0.26 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail [email protected] http://www.isocom.com 19/4/99 Dimensions in mm 2.54 7.0 6.0 7.62 max. 1 6 2 5 3 4 8.3 max. 5.1 max. 0.5 min. 3.9 3.1 0.48 0.25 15° Max APPLICATIONS (cont.) As an Analog Signal Switch l Isolated sample and hold circuit l Multiplexed, optically isolated A/D conversion ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 150°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 60mA 6V 100mW OUTPUT TRANSISTOR Breakdown Voltage Detector Current (continuous) Power Dissipation ±30V ±100mA 300mW POWER DISSIPATION Total Power Dissipation 350mW ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB91069AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) Input Output (either PARAMETER MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 5 Breakdown Voltage - V( BR )46 (Note 2) 30 1.1 1.75 TEST CONDITION V V µA IF = 16mA IR = 10µA VR = 5V V I46 = 10µA,IF = 0 50 nA 50 µA 15 ΜΩ pF V46 = 15V, IF = 0, TA= 25°C V46 = 15V, IF = 0, TA = 100°C V46 = 15V, IF = 0 V46 = 0, IF = 0, f = 1 MHz On-state Resistance - r46 (Note 2) IS611 IS610 170 200 Ω Ω IF = 16mA, I46 = 100µA IF = 16mA, I46 = 100µA On-state Resistance - r64 (Note 2) IS611 IS610 170 200 Ω Ω IF = 16mA, I64 = 100µA IF = 16mA, I64 = 100µA 2 VRMS VPK Ω pF See note 1 See note 1 VIO = 500V (note 1) VIO= 0, f =1MHz 25 25 0.1 µs µs % IF= 16mA, V46 = 5V, RL = 50Ω IF= 16mA, f = 1kHz I46= 25µA RMS 10 polarity) Off-state Dark Current - I46 Off-state Resistance - r46 Capacitance - C46 Coupled Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Input-output Capacitance Cf Turn-on Time ton Turn-off Time toff Resistance, non-linearity and asymmetry Note 1 Note 2 19/4/99 300 5300 7500 1011 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91069-AAS/A2 On-state Resistance vs. Ambient Temperature Forward Current vs. Ambient Temperature 3 Normalized on-state resistance r (on) 80 Forward current I F (mA) 70 60 50 40 30 20 10 0 Normalized to IF = 16mA I46 = 25µA TA = 25 °C 2 median device 1 0.8 observed range 0.6 0.4 -30 0 25 50 75 100 -50 125 Ambient temperature TA ( °C ) ( µA) 40 Maximum RMS signal current I 20 10 maximum RMS current tra 2 4 po lat 2 ed 0 0 100 1000 10k 100 Normalized to V46 = 15V IF = 0 TA = 25 °C 10 1.0 100k 0 25 50 75 100 Ambient temperature TA ( °C ) Resistive non-linearity vs. D.C. Bias Input Current vs. Input Voltage 100 Change in resistance ∆ r (on) (%) 5 40 Forward current I F (mA) 100 1000 On-state resistance r (on) (Ω) 20 -25°C TA = 75°C 10 4 25°C 2 1 0.4 0.2 4 3 2 I46 = 10µA RMS r (on) = 200Ω 1 0 0.1 0.9 1.0 1.1 1.2 1.3 1.4 Forward voltage VF (V) 19/4/99 75 46 20 Ex 50 10000 Normalized dark current (mV) 100 46 Maximum RMS signal voltage V maximum RMS voltage 4 25 Normalized Off-state current vs. Ambient Temperature 100 10 0 Ambient temperature TA ( °C ) Region of Linear Resistance 40 -25 1.5 1.6 0 50 100 150 200 250 300 350 D.C. bias voltage V46 (mV) DB91069-AAS/A2