IXFB30N120P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1200V 30A Ω 350mΩ 300ns PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ± 30 V VGSM Transient ± 40 V ID25 TC = 25°C 30 A IDM TC = 25°C, Pulse Width Limited by TJM 75 A IA TC = 25°C 15 A EAS TC = 25°C 2.0 J dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 15 V/ns z PD TC = 25°C 1250 W z -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C TJ TL 1.6mm (0.062 in.) from Case for 10s 300 °C TSOLD Plastic Body for 10s 260 °C FC Mounting Torque 30..120/6.7..27 N/lb. 10 g Weight G D S G = Gate S = Source Tab D = Drain Tab = Drain Features z z Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages z z z z Plus 264TM Package for Clip or Spring Mounting High Power Density Easy to Mount Space Savings Applications z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 z V 6.5 V ± 300 nA z z TJ = 125°C © 2010 IXYS CORPORATION, All Rights Reserved z High Voltage Switch-Mode and Resonant-Mode Power Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Laser Pulsers Spark Igniters, RF Generators High Voltage DC-DC Coverters High Voltage DC-AC Inverters 50 μA 5.0 mA 350 mΩ DS99825B(02/10) IXFB30N120P Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz 22 S 22.5 nF 950 pF 28 pF 1.64 Ω 57 ns 60 ns 95 ns 56 ns 310 nC 104 nC 137 nC Crss RGi td(on) tr td(off) tf Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC 0.10 RthCS PLUS264TM (IXFB) Outline 0.13 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 30 A ISM Repetitive, Pulse Width Limited by TJM 120 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 0.5 • ID25, VGS = 0V 300 ns QRM -di/dt = 100A/μs VR = 100V IRM 1.6 μC 14 A Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFB30N120P Fig. 1. Output Characteristics @ T J = @ 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 30 70 VGS = 10V 25 50 8V 20 ID - Amperes ID - Amperes VGS = 10V 9V 60 15 10 7V 40 8V 30 20 7V 5 10 6V 6V 0 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 25 30 Fig. 4. RDS(on) Normalized to ID = 15A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 30 3.0 VGS = 10V 8V VGS = 10V 2.6 20 R DS(on) - Normalized 25 ID - Amperes 20 VDS - Volts VDS - Volts 7V 15 10 2.2 I D = 30A 1.8 I D = 15A 1.4 1.0 6V 5 0.6 5V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 50 75 100 VDS - Volts TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 15A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 125 150 125 150 35 2.6 VGS = 10V 2.4 TJ = 125ºC 30 25 2 ID - Amperes R DS(on) - Normalized 2.2 1.8 1.6 20 15 1.4 10 1.2 5 TJ = 25ºC 1 0 0.8 0 10 20 30 40 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFB30N120P Fig. 8. Transconductance Fig. 7. Input Admittance 30 35 TJ = - 40ºC 30 25 g f s - Siemens ID - Amperes 25ºC 25 TJ = 125ºC 25ºC - 40ºC 20 15 10 125ºC 20 15 10 5 5 0 0 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 0 8.0 5 10 VGS - Volts 15 20 25 30 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 90 16 80 14 VDS = 600V 12 I G = 10mA I D = 15A 70 VGS - Volts IS - Amperes 60 50 40 TJ = 125ºC 10 8 6 30 TJ = 25ºC 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 50 100 150 VSD - Volts 200 250 300 350 400 450 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100,000 100 RDS(on) Limit f = 1 MHz Ciss 10,000 10 ID - Amperes Capacitance - PicoFarads 100µs 1,000 Coss 1ms 10ms 1 100 100ms TJ = 150ºC Tc = 25ºC Single Pulse Crss DC 0.1 10 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 1,000 VDS - Volts 10,000 IXFB30N120P Fig. 12. Maximum Transient Thermal Impedance 1.000 Fig. 13. Maximum Transient Thermal Impedance 0.200 Z(th)JC - ºC / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2010 IXYS CORPORATION, All Rights Reserved IXYS REF: F_30N120P(97)2-12-10-D