This is an advance copy of the dated document. The final document from Defense Automated Printing Service may be slightly different in format due To electronic conversion processes. Actual technical content will be the same. The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 August 1999 INCH-POUND MIL-PRF-19500/565B 21 May 1999 SUPERSEDING MIL-S-19500/565A 7 October 1987 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX, JANTXV AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for a P-channel, enhancement-mode, MOSFET, power transistor. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and TO-204AE for 2N6898 (formerly TO – 3). 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C. Type 2N6895 2N6896 2N6897 2N6898 PT 1/ PT TC = +25°C TA = +25°C W W 8.33 60 100 150 0.6 4 4 4 VDS VDG VGS V dc 100 V dc 100 V dc ±20 ID2 2/ ID1 2/ TC = +25°C TC = +100°C IS IDM TJ and TSTG °C -55 to +150 A dc A dc A dc A(pk) 1.16 6.0 12 25 0.74 3.8 7.6 15.8 1.16 6.0 12 25 5 20 30 60 1/ Derate linearly TC > +25°C – 2N6895 (0.067 W/°C), 2N6896 (0.48 W/°C), 2N6897 (0.8 W/°C), 2N6898 (1.2 W/°C). 2/ Derate above TC = +25 °C according to the formula ID = P( rated) K where P(rated) = PT – (TC = -25) (W/°C) watts; K = max rDS(on) at TJ =+150°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/565B 1.4 Primary electrical characteristics at TC = +25°C. Type Min V(BR)DSS VGS = 0 V ID = -1.0 mA dc V dc -100 VGS(th)1 VDS ≥ VGS ID = -1.0 mA dc V dc Min Max -2.0 -4.0 Max IDSS1 VGS = 0 V Max rDS(on) 1/ VGS = -10 V dc RΘJC VDS = 80 percent of rated VDS TJ = +25°C at ID1 TJ = +150°C at ID2 µA dc -1.0 Ohm Ohm °C/W 3.65 0.6 0.3 0.2 6.15 1.67 0.69 0.24 15.0 2.083 1.25 0.83 2N6895 2N6896 2N6897 2N6898 1/ Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in section 3 and 4 of this specification, whether or not they are listed. 2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Standardization Documents Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein, the text of this specification takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.3 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 2 MIL-PRF-19500/565B FIGURE 1. Physical dimensions for 2N6895 (TO-205AF). 3 MIL-PRF-19500/565B 1/ Dimensions Ltr Inches Notes Millimeters Min Max Min Max CD .305 .335 7.75 8.51 CH .160 .180 4.07 4.57 HD .335 .370 8.51 9.40 h .009 .041 0.23 1.04 j .028 .034 0.71 0.86 2 k .029 .045 0.74 1.14 3 LD .016 .021 0.41 0.53 7,8 LL .500 .750 12.70 19.05 7,8 LS LU .200 TP .016 L1 5.08 TP .019 0.41 .050 6 0.48 7,8 1.27 7,8 L2 .250 6.35 7,8 P .100 2.54 5 Q .050 1.27 4 r .010 0.25 9 α 45 TP 45 TP 6 NOTES: 1. Dimensions are in inches. Metric equivalents are given for general information only. 2. Beyond radius (r) maximum, j shall be held for a minimum length of 0.011 (0.028 mm). 3. Dimension k measured from maximum HD. 4. Outline in this zone is not controlled. 5. Dimension CD shall not vary more than 0.010 (0.25 mm) in zone P. This zone is controlled for automatic handling. 6. Leads at gauge plane 0.054 + 0.001, -0.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within 0.007 (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods. 7. LU applies between L1 and L2. LD applies between L2 and L minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 8. All three leads. 9. Radius (r) applies to both inside corners of tab. 10. Drain is electrically connected to the case. FIGURE 1. Physical dimensions for 2N6895 (TO – 205AF) Continued. 4 MIL-PRF-19500/565B 1/ Dimensions Symbol Inches Min Max CD Millimeters Min .875 Max 22.23 CH .250 .360 6.35 9.14 HR .495 .525 12.57 13.34 HR1 .131 .188 3.33 4.78 HT .060 .135 1.52 3.43 LD .038 .043 0.97 1.09 LL .312 .500 7.92 12.70 LL1 Notes .050 1.27 MHD .151 .161 3.84 4.09 MHS 1.177 1.197 29.90 30.40 PS .420 .440 10.67 11.18 3, 5 PS1 .205 .225 5.21 5.72 3, 5 s1 .655 .675 16.64 17.15 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. These dimensions should be measured at points 0.050 inch (1.27 mm) and 0.055 inch (1.40 mm) below seating plane. Measurement will be made at the seating plane. 4. The seating plane of the header shall be flat within 0.001 inch (0.03 mm) concave to 0.004 inch (0.10 mm) convex inside a 0.930 inch (23.62 mm) diameter circle on the center of the header and flat within 0.001 inch (0.03 mm) concave to 0.006 inch (0.15 mm) convex overall. 5. Mounting holes shall be deburred on the seating plane side. 6. Drain is electrically connected to the case. FIGURE 2. Physical dimensions of transistor 2N6896,2N6897, 2N6898 (TO-204AA and TO-204). 5 MIL-PRF-19500/565B 3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF19500 and as follows: C --------------------- Coulomb. 3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in MIL-PRF-19500, MIL-HDBK-6100 and figures 1 and 2, TO-205AF (formerly TO-39) for 2N6895, TO-204AA for 2N6896 and 2N6897; and TO-204AE for 2N6898 herein. 3.3.1 Lead material and finish. Lead material shall be Kovar, Alloy 52 for T0-205AF, and a copper core or plated core is permitted Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.3.2 Internal construction. Multiple chip construction shall not be permitted. 3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin may be omitted from the body of the transistor, but shall be retained on the initial container. 3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection. 3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge. The following handling practices shall be followed: a. Devices shall be handled on benches with conductive handling devices. b. Ground test equipment, tools, and personnel handling devices. c. Do not handle devices by the leads. d. Store devices in conductive foam or carriers. e. Avoid use of plastic, rubber, or silk in MOS areas. f. Maintain relative humidity above 50 percent if practical. g. Care shall be exercised, during test and troubleshooting, to apply not more than maximum rated voltage to any lead. h. Gate must be terminated to source, R ≤ 100 k, whenever bias voltage is to be applied drain to source. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3. 3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.2 ). 4. VERIFICATION 4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II herein. Alternate flow is allowed for qualification inspection in accordance with figure 4 of MIL-PRF-19500. 6 MIL-PRF-19500/565B 4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500. 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) Measurement JANS level 3 JANTX and JANTXV levels Test condition G Test condition G 1/ 2/ Method 3470 (see 4.5.4) Method 3470 (see 4.5.4) 1/ Method 3161 (see 4.5.3) Method 3161 (see 4.5.3) 9 IGSS1, IDSS1, gate stress test (see 4.5.5), subgroup 2 of table I herein Gate stress test (see 4.5.5), subgroup 2 of table I herein 10 Method 1042, test condition B Method 1042, test condition B 11 Subgroup 2 of table I herein; IGSS1, IDSS1, rDS(on)1, VGS(th)1, ∆IGSS1 = ± 20 nA dc or ±100 percent of initial value, whichever is greater. ∆IDSS1 = ± .2 µA dc or ±100 percent of initial value, whichever is greater. Subgroup 2 of table I herein. IGSS1, IDSS1, rDS(on)1, VGS(th)1 12 Method 1042, test condition A and test condition C. (see 4.3.1) Method 1042, test condition A 13 Subgroups 2 and 3 of table I herein; ∆IGSS1 = ± 20 nA dc or ±100 percent of initial value, whichever is greater. ∆IDSS1 = ± .2 µA dc or ±100 percent of initial value, whichever is greater. ∆rDS(on)1 = ± 20 percent of initial value. ∆VGS(th)1 = ± 20 percent of initial value. Subgroup 2 of table I herein; ∆IGSS1 = ± 20 nA dc or ±100 percent of initial value, whichever is greater. ∆IDSS1 = ± .2 µA dc or ±100 percent of initial value, whichever is greater. ∆rDS(on)1 = ± 20 percent of initial value. ∆VGS(th)1 = ± 20 percent of initial value. 1/ Shall be performed anytime before screen 9. 2/ Method 3470 is optional if performed as a sample in group A, subgroup 5. 4.3.1 Power burn-in. Power burn-in conditions are as follows: MIL-STD-750, method 3161, condition C, TA = +25°C, -5°C, +10°C, VDS = 10 V min.; ID adjusted to meet a junction temperature of 140°C, - 5°C, + 10°C, t = 240 hours. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for quality conformance inspection in accordance with figure 4 of MIL-PRF-19500. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with the inspections of table II herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall be in accordance with the inspections of table II herein. 7 MIL-PRF-19500/565B 4.4.2.1 Group B inspection table VIa (JANS) of MIL-PRF-19500. Subgroup Method Conditions 3 1051 Test condition G. 4 1042 Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum. 2N6895, VDS = -10 V dc, PT = 4 W at TA = +25°C ± 3°C. 2N6897, 2N6898, VDS = -20 V dc, PT = 0.6 W at TA = +25°C ± 3°C. 5 1042 Accelerated steady-state operation life; test condition C; TA = + 25°C, - 5°C, + 10°C, VDS = 10 V min.; ID adjusted to meet a junction temperature of 140°C, - 0°C, + 10°C, t = 240 hours. 5 2037 Bond strength (Al-Au die interconnects only); test condition A. 6 3161 See 4.5.2. 4.4.2.2 Group B inspection, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup Method Condition 2 1051 Test condition G, 25 cycles. 3 1042 Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table II herein. Subgroup Method Condition 2 2036 Test condition E . 6 1042 Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IX of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table II herein. 1/ Subgroup Condition Sampling plan 1051 Test Condition G, 500 cycles Electrical measurements See table II, steps 1, 2, 3, 4, 5, 6, and 7. 45 devices, c = 0 E2 1042 Test condition A, 1,000 hours. Electrical measurements See table II, steps 1, 2, 3, 4, 5, 6, and 7. 45 devices, c = 0 E2 1042 Test condition B, 1,000 hours. Electrical measurements See table II, steps 1, 2, 3, 4, 5, 6, and 7. 45 devices, c = 0 E1 Method E3 E4 Not applicable 3161 RθJC see 1.4 5 devices, c = 0 E5 Not applicable _______ 1/ A separate sample may be pulled for each test. 8 MIL-PRF-19500/565B 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal impedance. Thermal impedance measurements shall be performed in accordance with method 3161 of MIL-STD-750. RΘJC(max) = (2N6895 = 15.0°C/W, 2N6896 = 2.083°C/W, 2N6897 = 1.25°C/W, 2N6898 = 0.83°C/W. tH = Steady-state (see MIL-STD-750, method 3161 for definition). 2N6895 2N6896 2N6897 2N6898 IM 10 mA 10 mA 10 mA 10 mA IH 0.6 A 2A 3.5 A 4A VH 10 V 20 V 20 V 25 V tMD 10 – 80 µs 10 – 80 µs 10 – 80 µs 10 – 80 µs tSW 10 µs max. 10 µs max. 10 µs max. 10 µs max. 4.5.3 Thermal response (∆VSD measurements). The ∆VSD measurements shall be performed in accordance with MIL-STD-750, method 3161. The ∆VSD conditions (IH and VH) and maximum limit shall be derived by each vendor from the thermal response curves (see figure 3) and shall be specified in the certificate of conformance prior to qualification. The following parameter measurements shall apply. 2N6895 2N6896 2N6897 2N6898 IM 10 mA 10 mA 10 mA 10 mA IH 0.6 A 2A 3.5 A 4A VH 10 V 20 V 20 V 25 V tMD 10 – 80 µs 10 – 80 µs 10 – 80 µs 10 – 80 µs tSW 10 µs max. 10 µs max. 10 µs max. 10 µs max. 4.5.4 Unclamped inductive switching. a. Peak current (ID) 2N6895 1A 2N6896 2.7 A 2N6897 5A 2N6898 5.9 A b. Peak gate voltage (VGS) ............................................................10 V. c. Gate to source resistor (RGS) ...................................................25Ω ≤ RGS ≤ 200Ω. d. Initial case temperature (TC) .....................................................+25°C, +10°C, -5°C. e. Inductance (L).............................................................................100 µH ±10 percent. f. Number of pulses to be applied ..................................................1 pulse minimum. g. Pulse repetition rate ....................................................................None. 4.5.5 Gate stress test. VGS = - 30 V minimum. t = 250 µs minimum. 9 MIL-PRF-19500/565B TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Breakdown voltage, drain to source 3407 Bias condition C, VGS = 0 V; ID = -1.0 mA dc Gate to source voltage (threshold) 3403 VDS > VGS; ID = -0.25 mA dc Gate current 3411 Bias condition C; VDS = 0 V; VGS = +20 and -20 V dc IGSS1 ±100 nA dc Drain current 3413 VGS = 0; bias condition C; VDS = -80 V IDSS1 -1.0 µA dc Static drain to source on-state resistance 3421 VGS = -10 V dc; condition A; pulsed (see 4.5.1) 2N6895 2N6896 2N6897 2N6898 Drain to source on-state voltage 2N6895 2N6896 2N6897 2N6898 -100 VGS(th)1 -2.0 3405 V dc ohms 3.65 0.6 0.3 0.2 VGS = 10 V dc; condition A; pulsed (see 4.5.1) VDS(on)1 V -6.0 -6.0 -4.8 -6.0 ID = -1.16 A dc ID = -6.0 A dc ID = -12.0 A dc ID = -25.0 A dc 4011 -4.0 rDS(on)1 ID = -0.74 A dc ID = -3.8 A dc ID = -7.6 A dc ID = -15.8 A dc 2N6895 2N6896 2N6897 2N6898 Forward voltage (source drain diode) V(BR)DSS Pulsed (see 4.5.1); VGS = 0 V IS = -1.16 A dc IS = -6.0 A dc IS = -12.0 A dc IS = -25.0 A dc See footnotes at end of table. 10 VSD -0.8 -1.6 V MIL-PRF-19500/565B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 2 continued Forward transconductance 3475 Pulsed (see 4.5.1), ID = rated ID2 =(see 1.3). 2N6895 2N6896 2N6897 2N6898 s gfs 0.2 1.0 2.0 4.0 Subgroup 3 High temperature operation: TC = TJ = +125°C Gate to source voltage(threshold) 3403 VDS > VGS, ID = -0.25 mA dc VGS(th)2 Gate current 3411 Bias condition C, VDS = 0 V; VGS = +20 V dc and -20 V dc IGSS2 ±200 nA dc Drain current 3413 Bias condition C, VGS = 0 V, VDS = -80 V IDSS2 - 50 µA dc Static drain to source on-state resistance 3421 VGS = -10 V dc, Pulsed (see 4.5.1) rDS(on)2 2N6895 2N6896 2N6897 2N6898 ID = - 0.74 A dc ID = - 3.8 A dc ID = - 7.6 A dc ID = - 15.8 A dc Low temperature operation: TC = TJ = -55°C Gate to source voltage (threshold) -1.0 V dc ohms 5.66 0.96 0.465 0.24 3403 VDS > VGS, ID = -0.25 mA 3472 ID = rated ID2 (see 1.3); VGS = 10 V dc; Rgen =15 Ω VGS(th)3 -5.0 V dc Subgroup 4 Switching time test RGS =15 Ω, VDD = 50 percent of rated VDS (see 1.3); Turn-on delay time VDD = -50 V dc 2N6895 2N6896 2N6897 2N6898 ID = - 0.74 V dc ID = - 3.8 V dc ID = - 7.6 V dc ID = - 15.8 V dc td(on) ns 25 60 60 50 See footnotes at end of table. 11 MIL-PRF-19500/565B TABLE I. Group A inspection - Continued. Inspection 1/ 4/ MIL-STD-750 Method Symbol Conditions Rise time VDD = -50 V dc 2N6895 2N6896 2N6897 2N6898 ID = - 0.74 V dc ID = - 3.8 V dc ID = - 7.6 V dc ID = - 15.8 V dc Limits Min Unit Max tr ns 45 100 175 250 Subgroup 4 - Continued. Turn-off delay time VDD = -50 V dc 2N6895 2N6896 2N6897 2N6898 ID = - 0.74 V dc ID = - 3.8 V dc ID = - 7.6 V dc ID = - 15.8 V dc Fall time VDD = -50 V dc 2N6895 2N6896 2N6897 2N6898 ID = - 0.74 V dc ID = - 3.8 V dc ID = - 7.6 V dc ID = - 15.8 V dc td(off) ns 45 150 275 400 tf ns 50 100 175 250 Subgroup 5 Safe operating area See figure 4. High voltage test VDS = 80 percent of rated V DS (see 1.3) Electrical measurements See table III, steps 1, 2, 3, 4, 5, 6, and 7 Subgroup 6 Not applicable Subgroup 7 Gate charge 3471 Condition A or B Test 1 Qg(on) nC On-state gate charge 2N6895 2N6896 2N6897 2N6898 2.2 13 31 50 See footnotes at end of table. 12 4.7 24 58 117 MIL-PRF-19500/565B TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 7 - Continued. Test 2 Qgs nC Gate to source charge 2N6895 2N6896 2N6897 2N6898 0.4 1.1 3 6 1.2 5.5 13 25 Test 3 Gate to drain charge Qgd 2N6895 2N6896 2N6897 2N6898 Reverse recovery time nC 0.9 5.5 14 26 3473 2N6895 2N6896 2N6897 2N6898 VDD = ≤ 30 V; di/dt =100A/µs IF = 4 A 1/ For sampling plan, see MIL-PRF-19500. 13 2.9 14.5 36 69 trr ns 340 375 500 750 MIL-PRF-19500/565B TABLE II. Group A, B, C and E electrical measurements. 1/ 2/ 3/ Step Inspection MIL-STD-750 Symbol Limit Min Method 1. Breakdown voltage drain to source 3407 2. Gate to source voltage (threshold) 3403 3. Gate current 3411 Unit Max Conditions V(BR)DSS - 100 VDS ≥ VGS ; ID = -0.25 mA dc VGS(th)1 -2.0 Bias condition C; VGS = + 20 Vdc Bias condition C; ID = - 1.0 mA dc, V dc VGS = 0 V -4.0 V dc IGSS1 -100 nA dc IDSS1 -50 µA dc and -20 V dc; VDS = 0 V 4. Drain current 3413 Bias condition C; VDS = -80 V dc; VGS = 0 V 5. Static drain to source “on”- state resistance 3421 2N6895 2N6896 2N6897 2N6898 6. Drain to source “on”state voltage Forward voltage (source drain diode) 3405 1/ Thermal response 3.65 0.6 0.3 0.2 VGS = -10 V dc; condition A, pulsed (see 4.5.1) VDS(on) -6.0 -6.0 -4.8 -6.0 ID = - 1.16 V dc ID = - 6.0 V dc ID = - 12.0 V dc ID = - 25.0 V dc 4011 Pulsed (see 4.5.1), VGS = 0 VSD -0.8 -1.6 IS = -1.16 A dc IS = -6.04.0 A dc IS = -12.0 A dc IS = -25.0 A dc 2N6895 2N6896 2N6897 2N6898 8. Ohm rDS(on)1 ID = - 0.74 V dc ID = - 3.8 V dc ID = - 7.6 V dc ID = - 15.8 V dc 2N6895 2N6896 2N6897 2N6898 7. VGS = -10 V dc; condition A, pulsed (see 4.5.1) 3161 ∆VSD See 4.5.3 The electrical measurements for appendix E, table VIa (JANS) of MIL-PRF-19500 are as follows: a. Subgroup 3, see table II herein, steps 1, 2, 3, 4, 5, 6, and 7. b. Subgroup 4, see table II herein, steps 1, 2, 3, 4, 5, 6, 7, and 8. c. Subgroup 5, see table II herein, steps 1, 2, 3, 4, 5, 6, and 7. 2/ The electrical measurements for appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500 are as follows: a. Subgroup 2, see table II herein, steps 1, 2, 3, 4, 5, 6 and 7. b. Subgroups 3 and 6, see table II herein, steps 1, 2, 3, 4, 5, 6, 7 and 8. 3/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows: a. Subgroups 2 and 3, see table II herein, steps 1, 2, 3, 4, 5, 6 and 7. b. Subgroup 6, see table II herein, steps 1, 2, 3, 4, 5, 6, 7 and 8. 14 V MIL-PRF-19500/565B FIGURE 3. Transient thermal response. 15 MIL-PRF-19500/565B FIGURE 3. Transient thermal response - Continued. 16 MIL-PRF-19500/565B FIGURE 3. Transient thermal response - Continued. 17 MIL-PRF-19500/565B FIGURE 3. Transient thermal response - Continued. 18 MIL-PRF-19500/565B FIGURE 4. Maximum safe operating area. 19 MIL-PRF-19500/565B FIGURE 4. Maximum safe operating area – Continued. 20 MIL-PRF-19500/565B FIGURE 4. Maximum safe operating area – Continued. 21 MIL-PRF-19500/565B FIGURE 4. Maximum safe operating area – Continued. 22 MIL-PRF-19500/565B 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 The requirements for packaging shall be in accordance with MIL-PRF-19500. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Issue of DODISS to be cited in the solicitation (see 2.1.1 and 2.2). b. The lead finish as specified (see 3.4.1). c. For die acquisition, specify the JANHC or JANKC letter version (see figure 2). d. Type designation and quality assurance level. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer's QML-19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216. 6.4 Changes from previous issue. Asterisks are not used in this revision to identify changes with respect to the previous issue due to the extensiveness of the changes. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA Preparing activity: DLA - CC (Project 5961- 2084) Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 13, 19, 85, 99 23 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/565B 2. DOCUMENT DATE (YYMMDD) 990521 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, P-CHANNEL, SILICON TYPES 2N6895, 2N6896, 2N6897, AND 2N6898 JAN, JANTX, JANTXV AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of contact: Alan Barone, c. ADDRESS : Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-68880 Previous editions are obsolete WHS/DIOR, Feb 99