INCH-POUND The documentation process conversion measures necessary to comply with this revision shall be completed by 28 March 1998 MIL-PRF-19500/613A 28 December 1997 SUPERSEDING MIL-S-19500/613 30 July 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, power transistors for use in high-speed power switching applications. Four levels of product assurance are provided as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (TO-254AA). 1.3 Maximum ratings. PT 1/ PT 2/ VCBO TA = +25qC TC = +25qC W W VCEO VEBO IC IC TJ and TSTG Type 1/ 2/ 3/ 4/ 3/ V dc V dc V dc A dc A dc qC 2N7373 4 58 100 8.5 5.0 5.0 10 -65 to +200 Derate linearly 22.8 mW/qC for TA > +25qC. Derate linearly 331 mW/qC for TC > +25qC. This value applies for PW d 8.3 ms, duty cycle d 1%. This rating is based on the capability of the transistors to operate safely in the unclamped inductive load energy test circuit of figure 1. 1.4 Primary electrical characteristics. RTJA RTJC pF qC/W qC/W 250 88 3 hFE2 |hfe| VBE(SAT)2 1/ VCE(SAT)2 1/ Cobo VCE = 5.0 V dc IC = 2.5 A dc VCE = 5.0 V dc IC = 500 mA dc f = 10 MHz IC = 5.0 A dc IB = 500 mA dc IC = 5.0 A dc IB = 500 mA dc VCB = 10 V dc IE = 0 A dc f = 1 MHz V dc V dc 2.2 1.5 Min 70 Max 200 1/ Pulse (see 4.5.1). 7.0 Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/613A 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2. Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD MILITARY MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing on the applicable qualified products list before contract award (see 4.2 and 6.3). 3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein. 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions shall be as specified on figure 1. Methods used for electrical isolation of the terminal feedthroughs shall employ materials that contain a minimum of 90 percent AL2O3 (ceramic). Examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. The preferred measurements used herein are the metric units. However, this transistor was designed using inch-pound units of measurement. In case of conflicts between the metric and inch-pound units, the inch-pound units shall be ruled. 3.4.1 Lead finish and formation. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of lead finish or formation is desired, it shall be specified in the acquisition requirements (see 6.5). When lead formation is performed, as a minimum, the vendor shall perform 100 percent hermetic seal in accordance with appendix E, table IV, screen 14, of MIL-PRF-19500. 3.5 Marking. Marking shall be in accordance with MIL-PRF-19500. 3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 2 MIL-PRF-19500/613A Dimensions Ltr Inches Millimeters Min Max Min Max BL .535 .545 13.59 13.89 CH .249 .260 6.32 6.60 LD .035 .045 0.89 1.43 LL .53 .55 13.46 13.97 LO .150 BSC 3.81 BSC LS .150 BSC 3.81 BSC MHD .139 .149 3.53 3.78 MHO .665 .685 16.89 17.40 TL .790 .800 20.07 20.32 TT .040 .050 1.02 1.27 TW .535 .545 13.59 13.89 Term 1 Base Term 2 Collector Term 3 Emitter NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. All terminals are isolated from case. FIGURE 1. Dimensions and configuration (T0-254AA). 3 MIL-PRF-19500/613A 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. 4.3 Screening ( JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with MIL-PRF-19500 (Appendix E, table IV), and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see appendix E, table IV of MIL-PRF-19500) Measurements JANS level JANTX and JANTXV levels 1/ Thermal impedance (see 4.32) Thermal impedance (see 4.3.2) 9 ICES1 and hFE2 Not applicable 11 Subgroup 2 of table I herein; ICES1 and hFE2; 'CES1 = 100 percent of initial value or 100 nA dc, whichever is greater. 'hFE2 = r 20 percent of initial value. ICES1 and hFE2 12 t = 160 hours t = 80 hours minimum 13 Subgroups 2 and 3 of table I herein; CES1 and hFE2; 'CES1 = 100 percent of initial value or 100 nA dc, whichever is greater. 'hFE2 = r 20 percent of initial value. Subgroup 2 of table I herein; ICES1 and hFE2; 'CES1 = 100 percent of initial value or 100 nA dc, whichever is greater. 'hFE2 = r 20 percent of initial value. 1/ May be performed anytime before screen 9. 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TJ = 187.5 r 12.5qC, VCE t 20 V dc, TA d 100qC 4.3.2 Thermal impedance (ZTJX measurements). The ZTJX measurements shall be performed in accordance with MIL-STD-750, method 3131. The maximum limit (not to exceed the group A, subgroup 2 limit) for ZTJX in appendix E, table IV, screening of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for Engineering evaluation and disposition. 4 MIL-PRF-19500/613A 4.3.2.1 Thermal impedance (ZTJX measurements) for initial qualification or requalification. The ZTJX measurements shall be performed in accordance with MIL-STD-750, method 3131 (read and record date ZTJX). ZTJX shall be supplied on one lot (500 devices minimum and a thermal response curve shall be submitted). Twenty two of these samples shall be serialized and provided to the qualifying activity for correlation prior to shipment of parts. Measurements conditions shall be in accordance with 4.4.1. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500, and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500, and table I herein. The following test conditions shall be used for ZTJX, end point measurements: ZTJX = 3.1qC/W. a. IM ......................................................................... 10 mA. b. VCE measurement voltage ................................... 20 V (same as VH). c. IH collector heating current .................................. 1 A (minimum). d. VH collector-emitter heating voltage ..................... 20 V (minimum). e. tH heating time ..................................................... 100 ms. f. tMD measurement delay time ............................... 50 Ps to 80 Ps. g. tSW sample window time ..................................... 10 Ps (maximum). 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, tables VIa (JANS) and VIb (JANTX and JANTXV) of MIL-PRF-19500. Electrical measurements (end points) shall be in accordance with the applicable steps and table I, group A, subgroup 2 herein except ZTJX shall be performed after Intermittent Life (subgroup 4) only. 4.4.2.1 Group B inspection, appendix E, table VIa (JANS) of MIL-PRF-19500. Subgroup Method Condition B3 2037 Test condition A B4 1037 VCB = 10 V dc minimum; PT = 2.5 W at TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced air cooling on the devices shall be permitted. B5 1027 See 4.5.4. B6 3131 See 4.5.2. 4.4.2.2 Group B inspection, appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500. Subgroup B3 Method Condition 1037 VCB = 10 V dc minimum; PT = 2.5 W at TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750; ton = toff = 3 minutes minimum for 2,000 cycles. No heat sink or forced air cooling on the devices shall be permitted. B5 3131 See 4.5.2. 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table VII of MIL-PRF-19500. Electrical measurements (end points) shall be in accordance with the applicable steps and table I, group A, subgroup 2 herein except ZTJX shall be performed after intermittent life (subgroup 4) only. 5 MIL-PRF-19500/613A 4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500. Subgroup Method Condition C2 2036 Tense: test condition A; weight 10 pounds r 5 ounces; time 15 seconds. Bend strength: test condition F; bending stress 2 pounds, time 15 seconds. C6 1037 VCB = 30 V dc minimum; PT = 2.5 W at TA = room ambient as defined in the general requirements of 4.5 of MIL-STD-750; ton = toff = 3 minutes minimum for 6,000 cycles. No heat sink or forced air cooling on the devices shall be permitted. 4.4.4 Group E inspection. Group e inspection shall be conducted in accordance with the conditions specified for subgroup testing in appendix E, table IX of MIL-PRF-19500 Electrical measurements (end points) shall be in accordance with the applicable steps and table I, group A, subgroup 2 herein except ZTJX shall not be performed. 4.4.4.1 Group E inspection, appendix E, table IX of MIL-PRF-19500. Subgroup Method Condition Sampling plan E1 1051 500 cycles 22 devices, c = 0 E2 1039 Condition A, 500 hours 22 devices, c = 0 E3 E4 Not applicable 3131 See 4.4.1 10 devices, c = 0 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with test method 3131 of MIL-STD-750. The following details shall apply: a. Collector current magnitude during power application shall be 2 A dc. b. Collector to emitter voltage magnitude shall be 10 V dc. c. Reference temperature measuring point shall be the case. d. Reference point temperature shall be 25qC d TR d 75qC and recorded before the test is started. e. Mounting arrangement shall be with heat sink to header. f. Maximum limit of RTJC shall be 3.0qC/W. 4.5.3 Inspection conditions. Unless otherwise specified in MIL-S-19500 or herein, all inspections shall be conducted at a case temperature (TC) of +25qC r3qC. 4.5.4 Group B accelerated life test. This test shall be conducted using one of the two options listed herein (a and b) with the following conditions applying to all options: VCB = 20 V minimum dc; 96 hours minimum; TJ = +275qC. a. PT = 2.5; PT adjusted to give a lot average of TJ = +275qC with TA = +125qC r 25qC. b. TA = +25qC r3qC with PT adjusted to give a lot average of TJ = +275qC. 6 MIL-PRF-19500/613A TABLE I. Group A inspection. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 1 Visual and mechanical examination 2071 Subgroup 2 Thermal impedance 3131 See 4.4.1 Collector to emitter breakdown voltage 3011 Bias condition D; IC = 100 mA dc; IB = 0; Pulsed (see. 4.5.1) Collector to emitter cutoff current 3041 Bias condition C; VCE = 60 V dc; V BE = 0 Collector to emitter cutoff current 3041 Bias condition C; VCE = 100 V dc; V BE = 0 Collector to emitter cutoff current 3041 Bias condition D; VCE = 40 V dc; I B=0 Emitter to base cutoff current 3061 Emitter to base cutoff current 3061 Forward-current transfer ratio 3076 Forward-current transfer ratio 3.1 V(BR)CEO 80 qC/W V dc ICES1 1.0 PA dc ICES2 1.0 mA dc ICEO 50 PA dc Bias condition D; VEB = 4 dc; I C=0 IEBO1 1.0 PA dc Bias condition D; VEB = 5.5 dc; I C=0 IEBO2 1.0 mA dc VCE = 5.0 V dc; IC = 50 mA dc; pulsed (see 4.5.1) hFE1 3076 VCE = 5.0 V dc; IC = 2.5 A dc; pulsed (see 4.5.1) hFE2 Forward-current transfer ratio 3076 VCE = 5.0 V dc; IC = 5.0 A dc; pulsed (see 4.5.1) hFE3 Base to emitter non-saturated voltage 3066 Test condition B; VCE = 5.0 V dc, IC = 2.5 A dc, pulsed (see 4.5.1) VBE 1.45 V dc VBE(SAT)1 V dc 3066 Test condition A; IC = 2.5 A dc IB = 250 mA dc, pulsed (see 4.5.1) 1.45 Base to emitter saturated voltage Base to emitter saturated voltage 3066 Test condition A; IC = 5.0 A dc IB = 500 mA dc, pulsed (see 4.5.1) VBE(SAT)2 2.2 V dc Collector to emitter saturated voltage 3071 IC = 2.5 A dc; IB = 250 mA dc; pulsed (see 4.5.1) VCE(sat)1 0.75 V dc Collector to emitter saturated voltage 3071 IC = 5.0 A dc; IB = 500 mA dc; pulsed (see 4.5.1) VCE(sat)2 1.5 V dc See footnote at end of table. 7 50 70 200 40 MIL-PRF-19500/613A TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Limits Min Unit Max Subgroup 3 TA = +150qC High-temperature operation: Collector to emitter cutoff current 3041 Low-temperature operation: Bias condition A; VCE = 60 V dc VBE(OFF) = +2 V dc 500 PA dc Cobo 250 pF ton 0.5 Ps ts 1.4 Ps tf 0.5 Ps 1.5 Ps ICEX TA = -55qC 3076 VCE = 5.0 V dc; IC = 2.5 A dc; pulsed (see 4.5.1) hFE4 25 Common emitter, small-signal shortcircuit forwardcurrent transfer ratio 3206 VCE = 5 V dc; IC = 100 mA dc; f = 1 kHz hfe 50 Magnitude of common emitter small-signal short-circuit forwardcurrent transfer ratio 3236 VCE = 5 V dc; IC = 500 mA dc; f = 10 MHz |hfe| Open circuit output capacitance 3236 Forward-current transfer ratio Subgroup 4 Switching time VCB = 10 V dc; IE = 0; 100 kHz d f d 1 MHz IC = 5 A dc; IB1 = 500 mA dc IB2 = -500 mA dc VBE(off) = 3.7 V dc RL = 6 :; (see figure 2) toff See footnote at end of table. 8 7 MIL-PRF-19500/613A TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Method Symbol Conditions Min Subgroup 5 Safe operating area (continuous dc) 3055 Limits Pre-pulse condition for each test: VCE = 0; IC = 0; TC = +25qC Pulse condition for each test: tp = 1 second, 1 cycle TC = +25qC, (see figure 4) Test 1 VCE = 12 V dc; IC = 5 A dc Test 2 VCE = 32 V dc; IC = 1.5 A dc Test 3 VCE = 80 V dc; IC = 100 mA dc Safe operating area (unclamped inductive) TC = +25qC; RBB1 = 10 ohms; RBB2 = 100 ohms; L = 0.3 mH; RL = 0.1 ohms; VCC = 10 V dc; RL = 0.1 ohms; VCC = 10 V dc; ICM = 10 A dc; (see figure 3) Electrical measurements Table I, group A, subgroup 2 Subgroups 6 and 7 Not applicable 1/ For sampling plan, see MIL-PRF 19500. 9 Unit Max MIL-PRF-19500/613A NOTES: 1. Vgen is -30 pulse (from 0 V) into a 50 ohm termination. 2. The Vgen waveform is supplied by a generator with the following characteristics: tr d 15 ns, tf = 15 ns, ZOUT = 50 ohm, duty cycle d 2 percent. 3. 3. 4. Waveforms are monitored on an oscilloscope with the following characteristics: tr d 15 ns, RIN t 10 M:, CIN d 11.5 pF. Resistors shall be noninductive types. The dc power supplies may require additional bypassing in order to minimize ringing. FIGURE 2. Switching time test circuit. 10 MIL-PRF-19500/613A FIGURE 3. Unclamped inductive load energy test circuit. 11 MIL-PRF-19500/613A FIGURE 4. Maximum safe operating area. 12 MIL-PRF-19500/613A 5. PACKAGING 5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-STD-129. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. See MIL- PRF-19500. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street, Columbus, OH 43216-5000. 6.4 Interchangeability information. MIL-PRF-19500/613 is a T0-254 package version of MIL-PRF-19500/534, which is a T0-210 (T059) package version. The military 2N7373 contains the same die as the military 2N5004. The MIL-PRF-19500/613 is preferred over the MIL-PRF-19500/534 whenever interchangeability is not a problem. For new design use 2N7373. The 2N5004 is inactive for new design. 6.5 Ordering data. Acquisition documents may specify the material and finish. 6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - EC Air Force - 17 NASA - NA Preparing activity: DLA - CC (Project 5961-1905) Review activities: Army - AR, MI, SM Navy - AS, CG, MC, OS Air Force - 13, 19, 85, 99 13 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/613A 2. DOCUMENT DATE 981228 3. DOCUMENT TITLE SEMICONDUCTOR DEVICES, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N7373, JAN, JANTX, JANTXV, AND JANS 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) c. ADDRESS (Include Zip Code) b. ORGANIZATION d. TELEPHONE (Include Area Code) Commercial DSN FAX EMAIL 7. DATE SUBMITTED (YYMMDD) 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAT Columbus, OH 43216-5000 DD Form 1426, OCT 89 b. TELEPHONE Commercial DSN 614-692-0510 850-0510 FAX 614-692-6939 EMAIL [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Quality and Standardization Office 5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466 Telephone (703) 756-2340 AUTOVON 289-2340 Previous editions are obsolete 198/290