The documentation and process conversion measures necessary to comply with this document shall be completed by 4 April, 2002. INCH-POUND MIL-PRF-19500/396H 4 January 2002 SUPERSEDING MIL-PRF-19500/396G 21 April 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1, 2N3762L and 2N3763L (TO-5), 2N3762 and 2N3763 (TO-39), 2N3764 and 2N3765 (TO - 46) and figure 2 (die) herein. 1.3 Maximum ratings. Types 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 PT TA = +25°C VCBO VCEO VEBO IC TOP and TSTG RθJC W V dc V dc V dc A dc °C °C/W 40 40 60 60 40 60 40 40 60 60 40 60 5 5 5 5 5 5 1.5 1.5 1.5 1.5 1.5 1.5 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +200 60 60 60 60 88 88 1.0 1.0 1.0 1.0 0.5 0.5 (1) (1) (1) (1) (2) (2) (1) Derate linearly at 5.71 mW/°C above TA = +25°C. (2) Derate linearly at 2.86 mW/°C above TA = +25°C. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC, P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/396H 1.4 Primary electrical characteristics TA = +25°C. (Unless otherwise indicated, applies to all devices.). hFE1 VCE = 1.0 V dc; IC = 10 mA dc Limits 35 Min Max Limits 40 140 |hFE| VCE(SAT)3 Cobo f = 100 MHz VCE = 10 V dc IC = 50 mA dc IC = 500 mA dc IB = 50 mA dc (1) VCE = 10 V dc IE = 0 100 kHz ≤ f ≤ 1 MHz 2N3762 2N3764 2N3763 2N3765 1.8 6.0 1.5 6.0 Min Max hFE5 (1) VCE = 5.0 V dc; IC = 1.5 A dc hFE3 VCE = 1.0 V dc; IC = 500 mA dc 2N3762 2N3762L 2N3764 2N3763 2N3763L 2N3765 30 20 Pulse response See figure 3 See figure 4 td tr ts tf V dc pF ns ns ns ns 0.5 25 8 35 80 35 (1) Pulsed (see 4.5.1). 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services, Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/396H Symbol CD CH HD LC LD LL LU L1 L2 TL TW P Q r A TO-5, 39 TO-46 Min Max Min Max .305 .355 0.178 0.195 .240 .260 0.065 0.085 .355 .370 0.209 0.230 .200 TP 0.100 TP .016 .021 0.016 0.021 See notes 4, 5, 6, 7 .016 .021 0.016 0.021 .050 0.050 .250 0.250 .029 .045 0.028 0.048 .028 .034 0.036 0.046 .100 .040 .010 0.007 45° TP 45° TP Notes 4 4, 5 5 5 5 2 3 2 NOTES: 1. Dimensions are in inches. 2. Dimension TL measured from maximum HD. Dimension r (radius) applies to both inside corners of tab. 3. Body contour optional within zone defined by HD, CD, and Q. Dimension P not applicable to TO-46. 4. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by the gauge and gauging procedure. 5. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum. Diameter is uncontrolled in L1 and beyond LL minimum. 6. For TO-5 packages, dimension LL shall be 1.5 inches (38.1) mm minimum and 1.75 inches (44.4 mm) maximum. 7. For TO-39 and TO-46 packages, dimension LL shall be 0.5 inches (12.7) mm minimum and 0.75 inches (19.0 mm) maximum. 8. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology. 9. Lead 1 = emitter, lead 2 = base, lead 3 = collector (internally connected to the case). FIGURE 1. Physical dimensions 2N3762L and 2N3763L (TO - 5), 2N3762 and 2N3763 (TO - 39), 2N3764 and 2N3765 (TO - 46). 3 MIL-PRF-19500/396H 1. 2. 3. 4. Chip size Chip thickness Top metal Back metal 5. Backside 6. Bonding pad .040 x .040 inch ±.001 inch. .010 ±.0015 inch. Aluminum 15,000Å minimum, 18,000Å nominal. A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅ min.,15kÅ/5kÅ/10kÅ/10kÅ nominal. B. Gold 2,500Å minimum, 3,000Å nominal. C. Eutectic Mount - No Gold. Collector. B = .006 x .008 inch, E = .006 x .004 inch. FIGURE 2. JANHCA and JANKCA die dimensions. 4 MIL-PRF-19500/396H 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. * 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500. 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in MIL-PRF-19500 and on figures 1 and 2 herein. 3.4.1 Lead finish. Lead finish shall be solderable as defined in MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.5 Electrical performance characteristics. Unless otherwise specified, the electrical performance characteristics are as specified in 1.3, 1.4, and table I herein. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I. 3.7 Marking. Devices shall be marked in accordance with MIL-PRF-19500. * 3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from defects that will affect life, serviceability, or appearance. 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and 6.3 herein. * 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with MIL-PRF-19500. 5 MIL-PRF-19500/396H 4.3 Screening (JANTX, JANTXV and JANS levels only). Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Measurement Screen (see table IV of MIL-PRF-19500) JANS Level JANTX and JANTXV Level 1b Required Required (JANTXV only) 2 Optional Optional Required Not applicable Required method 3131. Required Not applicable Required method 3131. 4 Required Optional 5 and 6 Required Not applicable (2) 7a and 7b Required Required 8 Required Not required 9 ICBO2, hFE3 read and record Not applicable 10 24 hours minimum 24 hours minimum 11 ICBO2; hFE3; ∆ICBO2 = 100 percent of initial value or 10 nA dc, whichever is greater. ∆hFE3 = ±15 percent ICBO2; hFE3 12 See 4.3.1, 240 hours minimum See 4.3.1, 80 hours minimum Subgroups 2 and 3 of table I herein; ∆ICBO2 = 100 percent of initial value or 10 nA dc, whichever is greater; ∆hFE3 = ±15 percent Subgroups 2 of table I herein; ∆ICBO2 = 100 percent of initial value or 10 nA dc, whichever is greater; ∆hFE3 = ±15 percent Optional Optional Not required Not required 3a 3b (1) 3c (3) 13 (2) 14a and 14b 15 and 16 (1) Thermal impedance may be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) Hermeticity evaluation may be performed in either step 7 or step 14. (3) PDA = 5 percent for screen 13, applies to ∆ICBO2, ∆hFE3, ICBO2 ,hFE3. Thermal impedance (ZθJX) is not required in screen 13. 6 MIL-PRF-19500/396H * 4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10-30 V dc; power shall be applied to achieve TJ = +135°C minimum using a minimum power dissipation = 75 percent of maximum rated PT (see 1.3). NOTE: No heat sink or forced air cooling on the devices shall be permitted. Power burn-in conditions for "L" suffix devices are identical to their corresponding non-L suffix devices. 4.3.2. Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with MIL-PRF-19500, “Discrete Semiconductor Die/Chip Lot Acceptance”. Burn-in duration for the JANKC level follows JANS requirements; the JANHC follows JANTX requirements. 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of screened devices shall be submitted to and pass the requirements of group A1 and group A2 inspection only (table VIb, group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with 4.4.2 herein). 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500 and table I herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein except for thermal impedance. See 4.4.2.2 for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.2 and shall be in accordance with group A, subgroup 2 and 4.5.2 herein except for thermal impedance. 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500. Subgroup Method * B4 1037 VCB = 10 - 30 V dc. * B5 1027 (Note: If a failure occurs, resubmission shall be at the test conditions of the original sample.) VCB = 10 - 30 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3). Option 1: 96 hours minimum, sample size in accordance with table Via of MIL-PRF-19500 adjust TA or PD to achieve TJ = +275°C minimum. Option 2: 216 hrs minimum, sample size = 45, c = 0; adjust TA or PD to achieve TJ = +225°C minimum. Conditions * 4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV). 1/ Step Method 1 1039 Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, TJ = +150°C minimum. No heat sink or forced- air cooling on devices shall be permitted. n = 45, c = 0. 2 1039 The steady-state life test of step 1 shall be extended to 1,000 hours for each die design. Samples shall be selected from a wafer lot every twelve months of wafer production. Group B step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0. 3 1032 High-temperature life (non-operating). TA = +200°C, t = 340 hours, n = 22, c = 0. Condition ________ 1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped. 7 MIL-PRF-19500/396H 4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following requirements: a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection lot. See MIL-PRF-19500. b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2, conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and JANTXV) may be pulled prior to the application of final lead finish. 4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein except for thermal impedance. 4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500. Subgroup * Method Condition C2 2036 Test condition E. C6 1027 1,000 hours at VCB = 10 V dc; TJ = +150°C min. External heating of the device under test to achieve TJ = +150°C minimum is allowed provided that a minimum of 75 percent of rated power is dissipated. No heat sink or forced-air cooling on device shall be permitted. 4.4.3 2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Subgroup Method Condition C2 2036 Test condition E. C5 3131 RθJC (see 4.5.2). C6 Not applicable. 4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any inspection lot containing the intended package type and lead finish procured to the same specification which is submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the intended package type shall be considered as complying with the requirements for that subgroup. 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for subgroup testing in table IX of MIL-PRF-19500, table II herein. Electrical measurements (end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein. 4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750. 8 MIL-PRF-19500/396H 4.5.2 Delta requirements. Delta requirements shall be as specified below: Step Inspection MIL-STD-750 Method 1 Collector-base cutoff current 3036 Symbol Conditions Bias condition D ∆ICB02 (1) 100 percent of initial value or ± 10 nA dc, whichever is greater. VCB = 20 V dc VCB = 30 V dc 2N3762, L; 2N3764 2N3763, L; 2N3765 Limit 2 Forward current transfer ratio 3076 VCE = 1.0 V dc; IC = 150 mA dc; pulsed see 4.5.1 ∆hFE2 (1) ± 25 percent change from initial reading. 3 Collector to emitter voltage (saturated) 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) ∆VCE(SAT)3 (2) ± 50 mV dc change from previous measured value (1) Devices which exceed the group A limits for this test shall not be accepted. (2) Applies to JANS only. 9 MIL-PRF-19500/396H TABLE I. Group A inspection. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 1 2/ Visual and mechanical inspection 3/ 2071 n = 45 devices, c = 0 Solderability 3/ 4/ 2026 n = 15 leads, c = 0 Resistance to solvents 3/ 4/ 5/ 1022 n = 15 devices, c = 0 Temp cycling 3/ 4/ 1051 Test condition C, 25 cycles. n = 22 devices, c = 0 Hermetic seal 4/ Fine leak Gross leak 1071 n = 22 devices, c = 0 Group A, subgroup 2 Electrical measurements 4/ Bond strength 3/ 4/ 2037 Precondition TA = + 250°C at t = 24 hours or TA = + 300°C at t = 2 hours n = 11 wires, c = 0 Decap internal visual (design verification) 2075 n = 1 device, c = 0 3036 Bias condition D * Subgroup 2 Collector to base, cutoff current ICBO1 10 µA dc IEBO1 10 µA dc VCB = 40 V dc VCB = 60 V dc 2N3762, 2N3764 2N3763, 2N3765 Emitter to base, cutoff current 2N3762, 2N3764 2N3763, 2N3765 3061 Bias condition D. VEB = 5 V dc Breakdown voltage collector to emitter 2N3762, 2N3764 2N3763, 2N3765 3011 Bias condition D; IC = 10 mA dc Collector to base cutoff current 2N3762, 2N3764 2N3763, 2N3765 3036 V(BR)CEO V dc 40 60 Bias condition D ICBO2 VCB = 20 V dc VCB = 30 V dc See footnotes at end of table. 10 100 nA dc MIL-PRF-19500/396H TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued. Collector to emitter cutoff current 2N3762, 2N3764 2N3763, 2N3765 3041 Emitter to base cutoff current 3061 Forward - current transfer ratio Bias condition A; VEB = 2.0 V dc ICEX1 100 nA dc Bias condition D; VEB = 2.0 V dc IEBO2 200 nA dc 3076 VCE = 1.0 V dc; IC = 10 mA dc hFE1 35 Forward - current transfer ratio 3076 VCE = 1.0 V dc; IC = 150 mA dc; pulsed (see 4.5.1) hFE2 40 Forward - current transfer ratio 3076 VCE = 1.0 V dc; IC = 500 mA dc; pulsed (see 4.5.1) hFE3 40 140 Forward - current transfer ratio 3076 VCE = 1.5 V dc; IC = 1.0 A dc; pulsed (see 4.5.1) hFE4 30 20 120 80 VCE = 20 V dc VCE = 30 V dc 2N3762, 2N3764 2N3763, 2N3765 Forward - current transfer ratio 3076 VCE = 5.0 V dc; IC = 1.5 A dc; pulsed (see 4.5.1) hFE5 2N3762, 2N3764 2N3763, 2N3765 30 20 Collector to emitter voltage (saturated) 3071 IC = 10 mA dc; IB = 1 mA dc; pulsed (see 4.5.1) VCE(SAT)1 0.10 V dc Collector to emitter voltage (saturated) 3071 IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VCE(SAT)2 0.22 V dc Collector to emitter voltage (saturated) 3071 IC = 500 mA dc; IB = 50 mA dc; pulsed (see 4.5.1) VCE(SAT)3 0.50 V dc Collector to emitter voltage (saturated) 3071 IC = 1.0 A dc; IB = 100 mA dc; pulsed (see 4.5.1) VCE(SAT)4 0.90 V dc Base to emitter voltage (saturated) 3066 Test condition A; IC = 10 mA dc; IB = 1 mA dc VBE(SAT)1 0.80 V dc Base to emitter voltage (saturated) 3066 Test condition A; IC = 150 mA dc; IB = 15 mA dc; pulsed (see 4.5.1) VBE(SAT)2 1.0 V dc See footnote at end of table. 11 MIL-PRF-19500/396H TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroup 2 - Continued. Base to emitter voltage (saturated) 3066 Test condition A; IC = 500 mA dc; IB = 50 mA dc, pulsed (see 4.5.1) VBE(SAT)3 Base to emitter voltage (saturated) 3066 Test condition A; IC = 1.0 A dc; IB = 100 mA dc, pulsed (see 4.5.1) VBE(SAT)4 .90 1.2 V dc 1.40 V dc 150 µA dc Subgroup 3 High - temperature operation TA = +150°C Collector to emitter cutoff current 2N3762, 2N3764 2N3763, 2N3765 Bias condition A; VEB = 2 V dc; Low - temperature operation TA = -55°C ICEX2 VCE = 20 V dc; VCE = 30 V dc Forward - current transfer ratio Subgroup 4 3076 VCE = 1.0 V dc; IC = 500 mA dc; pulsed (see 4.5.1) hFE6 Magnitude of common emitter, small - signal short - circuit forward - current transfer ratio 3306 VCE = 10 V dc; IC = 50 mA dc; f = 100 MHz |hfe| 2N3762, 2N3764 2N3763, 2N3765 20 1.8 1.5 6.0 6.0 Open circuit output capacitance 3236 VCB = 10 V dc; IE = 0; 100 kHz ≤ f ≤ 1 MHz Cobo 25 pF Input capacitance (output open - circuited) 3240 VEB = .5 V dc; IC = 0; 100 kHz ≤ f ≤ 1 MHz Cibo 80 pF Pulse delay time 3251 See figure 3 td 8 ns Pulse rise time 3251 See figure 3 tr 35 ns Pulse storage time 3251 See figure 4 ts 80 ns Pulse fall time 3251 See figure 4 tf 35 ns Pulse response See footnote at end of table. 12 MIL-PRF-19500/396H TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Symbol Conditions Limit Min Unit Max Subgroups 5 and 6 Not applicable 1/ For sampling plan, see MIL-PRF-19500. Electrical characteristics for "L" suffix devices are identical to their corresponding non- suffix devices. 2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon submission. 3/ Separate samples may be used. 4/ Not required for JANS devices. 5/ Not required for laser marked devices. * TABLE II. Group E inspection (all quality levels) - for qualification only. Inspection MIL-STD-750 Method Subgroup 1 1051 Qualification Conditions Test condition C, 500 cycles, sampling plan 12 devices, c = 0. Subgroup 2 1037 VCB = 10 V dc; PT = 1.0 W (for 2N3762, 2N3762L, 2N3763, and 2N3763L), PT = 0.5 W (for 2N3764 and 2N3765) at TA = room ambient as defined in the general requirements of MIL-STD-750. ton = toff = 3 minutes minimum for 6,000 cycles. 45 devices, c=0 Not applicable. Subgroup 3, 4, 5, 6, and 7 Subgroup 8 45 devices, c=0 Reverse stability 1033 Condition A for devices ≥ 400 V dc. Condition B for devices < 400 Vd dc. 13 MIL-PRF-19500/396H NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be 50Ω. 2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ .1 ns. 3. IB1 = -100 mA dc. FIGURE 3. Pulse response test circuit for td and tr. NOTES: 1. The rise time (tr) of the applied pulse shall be ≤ 2 ns, duty cycle ≤ 2 percent, and the generator source impedance shall be 50Ω. 2. Sampling oscilloscope: Zin ≥ 100 kΩ, Cin ≤ 12 pF, rise time ≤ .1 ns. 3. IB1 = +IB2 = -100 mA dc. FIGURE 4. Pulse response test circuit for ts and tf. 14 MIL-PRF-19500/396H 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). e. Type designation and quality assurance level. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers’ List QML whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, P. O. Box 3990, Columbus, OH 43216-5000. 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example, JANHCA2N2369A) will be identified on the QML. JANC ordering information Manufacturer PIN 43611 2N3762 2N3763 2N3764 2N3765 JANHCA2N3762 JANHCA2N3763 JANHCA2N3764 JANHCA2N3765 15 JANKCA2N3762 JANKCA2N3763 JANKCA2N3764 JANKCA2N3765 MIL-PRF-19500/396H 6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. This was done as a convenience only and the Government assumes no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the requirements of this document based on the entire content irrespective of the marginal notations and relationship to the last previous issue. Custodians: Army - CR Navy - EC Air Force - 11 NASA - NA DLA - CC Preparing activity: DLA - CC (Project 5961-2491) Review activities: Army - MI Navy - AS, MC Air Force - 19, 71, 99 16 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/396H 2. DOCUMENT DATE 4 January 2002 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPES 2N3762, 2N3762L, 2N3763, 2N3763L, 2N3764, AND 2N3765, JAN, JANTX, JANTXV, JANS, JANHC AND JANKC. 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99