Rev.0.2, May. 2010
K9F4G08U0D
K9K8G08U0D
K9K8G08U1D
K9WAG08U1D
优秀供应商：宏芯创科技 １８６６５８１９９２５ ＱＱ１９６７４９４３３３
Advance
4Gb D-die NAND Flash
Single-Level-Cell (1bit/cell)
datasheet
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SPECIFICATIONS WITHOUT NOTICE.
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K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
Revision History
Revision No.
History
Draft Date
Remark
Editor
0.0
1. Initial issue
Jan. 12, 2010
Advance
-
0.1
1. Corrected errata.
2. Chapter 1.2 Features revised.
May. 03, 2010
Advance
H.K.Kim
0.2
1. DDP/QDP Part ID are added.
May. 26, 2010
Advance
H.K.Kim
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact
the SAMSUNG branch office near your office.
-2-
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
Table Of Contents
1.0 INTRODUCTION ........................................................................................................................................................ 4
1.1 General Description................................................................................................................................................. 4
1.2 Features .................................................................................................................................................................. 4
1.3 PRODUCT LIST ...................................................................................................................................................... 4
1.4 Pin Configuration (TSOP1) ...................................................................................................................................... 5
1.4.1 PACKAGE DIMENSIONS ................................................................................................................................. 5
1.5 Pin Configuration (TSOP1) ...................................................................................................................................... 6
1.5.1 PACKAGE DIMENSIONS ................................................................................................................................. 6
1.6 Pin Description ........................................................................................................................................................ 7
2.0 PRODUCT INTRODUCTION...................................................................................................................................... 9
2.1 Absolute Maximum Ratings ..................................................................................................................................... 10
2.2 Recommended Operating Conditions ..................................................................................................................... 10
2.3 DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.) ..................10
2.4 Valid Block............................................................................................................................................................... 11
2.5 Ac Test Condition .................................................................................................................................................... 11
2.6 Capacitance(TA=25°C, VCC=3.3V, f=1.0MHz) ....................................................................................................... 11
2.7 Mode Selection........................................................................................................................................................ 11
2.8 Program / Erase Characteristics ........................................................................................................................12
2.9 AC Timing Characteristics for Command / Address / Data Input ............................................................................ 12
2.10 AC Characteristics for Operation........................................................................................................................... 13
3.0 NAND Flash Technical Notes .................................................................................................................................... 14
3.1 Initial Invalid Block(s) ............................................................................................................................................... 14
3.2 Identifying Initial Invalid Block(s) ............................................................................................................................. 14
3.3 Error in write or read operation................................................................................................................................ 15
3.4 Addressing for program operation ........................................................................................................................... 17
3.5 System Interface Using CE don’t-care. ................................................................................................................... 18
4.0 TIMING DIAGRAMS .................................................................................................................................................. 19
4.1 Command Latch Cycle ........................................................................................................................................... 19
4.2 Address Latch Cycle............................................................................................................................................... 19
4.3 Input Data Latch Cycle ........................................................................................................................................... 20
4.4 * Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)..................................................................................... 20
4.5 Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L) .................................................................... 21
4.6 Status Read Cycle .................................................................................................................................................. 21
4.7 Read Operation ...................................................................................................................................................... 22
4.8 Read Operation(Intercepted by CE) ....................................................................................................................... 22
4.9 Random Data Output In a Page ............................................................................................................................. 23
4.10 Page Program Operation...................................................................................................................................... 24
4.11 Page Program Operation with Random Data Input .............................................................................................. 25
4.12 Copy-Back Program Operation ............................................................................................................................ 26
4.13 Copy-Back Program Operation with Random Data Input ..................................................................................... 27
4.14 Two-Plane Page Program Operation ................................................................................................................... 28
4.15 Block Erase Operation.......................................................................................................................................... 29
4.16 Two-Plane Block Erase Operation ....................................................................................................................... 30
4.17 Read ID Operation................................................................................................................................................ 31
5.0 DEVICE OPERATION ................................................................................................................................................ 33
5.1 Page Read............................................................................................................................................................... 33
5.2 Page Program ......................................................................................................................................................... 34
5.3 Copy-back Program................................................................................................................................................. 35
5.4 Block Erase ............................................................................................................................................................. 36
5.5 Two-plane Page Program........................................................................................................................................ 36
5.6 Two-plane Block Erase............................................................................................................................................ 37
5.7 Two-plane Copy-back Program ............................................................................................................................... 37
5.8 Read Status............................................................................................................................................................. 39
5.9 Read ID ................................................................................................................................................................... 40
5.10 Reset ..................................................................................................................................................................... 40
5.11 Ready/Busy ........................................................................................................................................................... 41
5.12 Data Protection & Power Up Sequence ................................................................................................................ 42
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K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
1.0 INTRODUCTION
1.1 General Description
Offered in 512Mx8bit, the K9F4G08U0D is a 4G-bit NAND Flash Memory with spare 128M-bit. The device is offered in 3.3V Vcc. Its NAND cell provides
the most cost-effective solution for the solid state application market. A program operation can be performed in typical 250μs on the (2K+64)Byte page
and an erase operation can be performed in typical 2ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte.
The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage
of the K9F4G08U0D′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F4G08U0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
1.2 Features
• Command/Address/Data Multiplexed I/O Port
• Hardware Data Protection
- Program/Erase Lockout During Power Transitions
• Reliable CMOS Floating-Gate Technology
- ECC Requirement : 1bit/528Byte
- Endurance & Data Retention : Please refer to the qualification report
• Command Register Operation
• Unique ID for Copyright Protection
• Package :
- K9F4G08U0D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9K8G08U0D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9K8G08U1D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
- K9WAG08U1D-SCB0/SIB0 : Pb-FREE, Halogen-FREE PACKAGE
48 - Pin TSOP1 (12 x 20 / 0.5 mm pitch)
• Voltage Supply
- 3.3V Device(K9F4G08U0D) : 2.7V ~ 3.6V
• Organization
- Memory Cell Array : (512M + 16M) x 8bit
- Data Register : (2K + 64) x 8bit
• Automatic Program and Erase
- Page Program : (2K + 64)Byte
- Block Erase : (128K + 4K)Byte
• Page Read Operation
- Page Size : (2K + 64)Byte
- Random Read : 25μs(Max.)
- Serial Access : 25ns(Min.)
• Fast Write Cycle Time
- Page Program time : 250μs(Typ.)
- Block Erase Time : 2ms(Typ.)
1.3 PRODUCT LIST
Part Number
Vcc Range
Organization
PKG Type
2.70 ~ 3.60V
X8
TSOP1
K9F4G08U0D-S
K9K8G08U0D-S
K9K8G08U1D-S
K9WAG08U1D-S
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Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
1.4 Pin Configuration (TSOP1)
K9F4G08U0D-SCB0/SIB0
K9K8G08U0D-SCB0/SIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B1
RE
CE1
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-pin TSOP1
Standard Type
12mm x 20mm
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
1.4.1 PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
Unit :mm/Inch
0.10
MAX
0.004
48 - TSOP1 - 1220F
#48
#24
#25
0.50
0.0197
12.40
0.488 MAX
( 0.25 )
0.010
#1
12.00
0.472
+0.003
0.008-0.001
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
+0.075
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
18.40±0.10
0.724±0.004
0.125 0.035
0.25
0.010 TYP
1.00±0.05
0.039±0.002
( 0.50 )
0.020
-5-
1.20
0.047MAX
0.05
0.002 MIN
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
1.5 Pin Configuration (TSOP1)
K9K8G08U1D-SCB0/SIB0
K9WAG08U1D-SCB0/SIB0
N.C
N.C
N.C
N.C
N.C
R/B2
R/B1
RE
CE1
CE2
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-pin TSOP1
Standard Type
12mm x 20mm
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
1.5.1 PACKAGE DIMENSIONS
48-PIN LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
Unit :mm/Inch
0.10
MAX
0.004
48 - TSOP1 - 1220F
#48
#24
#25
0.50
0.0197
12.40
0.488 MAX
( 0.25 )
0.010
#1
12.00
0.472
+0.003
0.008-0.001
0.20 -0.03
+0.07
20.00±0.20
0.787±0.008
+0.075
0~8°
0.45~0.75
0.018~0.030
+0.003
0.005-0.001
18.40±0.10
0.724±0.004
0.125 0.035
0.25
0.010 TYP
1.00±0.05
0.039±0.002
( 0.50 )
0.020
-6-
1.20
0.047MAX
0.05
0.002 MIN
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
1.6 Pin Description
Pin Name
Pin Function
I/O0 ~ I/O7
DATA INPUTS/OUTPUTS
The I/O pins are used to input command, address and data, and to output data during read operations. The I/O pins float to
high-z when the chip is deselected or when the outputs are disabled.
CLE
COMMAND LATCH ENABLE
The CLE input controls the activating path for commands sent to the command register. When active high, commands are
latched into the command register through the I/O ports on the rising edge of the WE signal.
ALE
ADDRESS LATCH ENABLE
The ALE input controls the activating path for address to the internal address registers. Addresses are latched on the rising
edge of WE with ALE high.
CE
CHIP ENABLE
The CE input is the device selection control. When the device is in the Busy state, CE high is ignored, and the device does not
return to standby mode in program or erase operation.
RE
READ ENABLE
The RE input is the serial data-out control, and when active drives the data onto the I/O bus. Data is valid tREA after the falling edge of RE which also increments the internal column address counter by one.
WE
WRITE ENABLE
The WE input controls writes to the I/O port. Commands, address and data are latched on the rising edge of the WE pulse.
WP
WRITE PROTECT
The WP pin provides inadvertent program/erase protection during power transitions. The internal high voltage generator is
reset when the WP pin is active low.
R/B
READY/BUSY OUTPUT
The R/B output indicates the status of the device operation. When low, it indicates that a program, erase or random read operation is in process and returns to high state upon completion. It is an open drain output and does not float to high-z condition
when the chip is deselected or when outputs are disabled.
Vcc
POWER
VCC is the power supply for device.
Vss
GROUND
N.C
NO CONNECTION
Lead is not internally connected.
NOTE :
Connect all VCC and VSS pins of each device to common power supply outputs.
Do not leave VCC or VSS disconnected.
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datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
VCC
VSS
A12 - A29
X-Buffers
Latches
& Decoders
4,096M + 128M Bit
NAND Flash
ARRAY
A0 - A11
Y-Buffers
Latches
& Decoders
(2,048 + 64)Byte x 262,144
Data Register & S/A
Y-Gating
Command
Command
Register
CE
RE
WE
VCC
VSS
I/O Buffers & Latches
Control Logic
& High Voltage
Generator
Output
Driver
Global Buffers
I/0 0
I/0 7
CLE ALE WP
[Figure 1] K9F4G08U0D Functional Block Diagram
1 Block = 64 Pages
(128K + 4K) Byte
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 4,096 Blocks
= 4,224 Mbits
256K Pages
(=4,096 Blocks)
8 bit
2K Bytes
64 Bytes
I/O 0 ~ I/O 7
Page Register
2K Bytes
64 Bytes
[Figure 2] K9F4G08U0D Array Organization
I/O 0
I/O 1
1st Cycle
A0
A1
2nd Cycle
A8
A9
3rd Cycle
A12
A13
4th Cycle
A20
A21
5th Cycle
A28
A29
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
A2
A3
A4
A5
A6
A7
A10
A11
*L
*L
*L
*L
A14
A15
A16
A17
A18
A19
A22
A23
A24
A25
A26
A27
*L
*L
*L
*L
*L
*L
NOTE :
Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than required.
-8-
Column Address
Row Address :
Page Address : A12 ~ A17
Plane Address : A18
Block Address : A19 ~ the last Address
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
Advance Rev. 0.2
FLASH MEMORY
2.0 PRODUCT INTRODUCTION
The K9F4G08U0D is a 4,224Mbit(4,429,185,024 bit) memory organized as 262,144 rows(pages) by 2,112x8 columns. Spare 64x8 columns are located
from column address of 2,048~2,111. A 2,112-byte data register is connected to memory cell arrays accommodating data transfer between the I/O buffers
and memory during page read and page program operations. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in a different page. A block consists of two NAND structured strings. A NAND structure consists of 32 cells. Total
1,081,344 NAND cells reside in a block. The program and read operations are executed on a page basis, while the erase operation is executed on a block
basis. The memory array consists of 4,096 separately erasable 128K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the
K9F4G08U0D.
The K9F4G08U0D has addresses multiplexed into 8 I/Os. This scheme dramatically reduces pin counts and allows system upgrades to future densities
by maintaining consistency in system board design. Command, address and data are all written through I/O's by bringing WE to low while CE is low.
Those are latched on the rising edge of WE. Command Latch Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address
respectively, via the I/O pins. Some commands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle
bus. Some other commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execution.
The 528M byte physical space requires 30 addresses, thereby requiring five cycles for addressing : 2 cycles of column address, 3 cycles of row address,
in that order. Page Read and Page Program need the same five address cycles following the required command input. In Block Erase operation, however,
only the three row address cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the
specific commands of the K9F4G08U0D.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another page without need
for transporting the data to and from the external buffer memory. Since the time-consuming serial access and data-input cycles are removed, system performance for solid-state disk application is significantly increased.
[Table 1] Command Sets
Function
1st Cycle
2nd Cycle
Read
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
Page Program
Two-Plane Page Program(2)
Copy-Back Program
Two-Plane Copy-Back Program(2)
Block Erase
Two-Plane Block Erase
80h
10h
80h---11h
81h---10h
85h
10h
85h---11h
81h---10h
60h
D0h
60h---60h
D0h
Random Data Input(1)
85h
-
Random Data Output(1)
05h
E0h
Acceptable Command during Busy
O
Read Status
70h
O
Read Status 2
F1h
O
NOTE :
1) Random Data Input/Output can be executed in a page.
2) Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
Caution :
Any undefined command inputs are prohibited except for above command set of Table 1.
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datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
2.1 Absolute Maximum Ratings
Parameter
Symbol
Rating
VCC
-0.6 to +4.6
Voltage on any pin relative to VSS
Temperature Under Bias
Storage Temperature
K9XXG08XXD-XCB0
VIN
-0.6 to +4.6
VI/O
-0.6 to Vcc + 0.3 (< 4.6V)
K9XXG08XXD-XCB0
K9XXG08XXD-XIB0
V
-10 to +125
TBIAS
K9XXG08XXD-XIB0
Unit
°C
-40 to +125
TSTG
-65 to +150
°C
IOS
5
mA
Short Circuit Current
NOTE :
1) Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is VCC+0.3V which, during transitions, may overshoot to VCC+2.0V for periods <20ns.
2) Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2.2 Recommended Operating Conditions
(Voltage reference to GND, K9XXG08XXD-XCB0 :TA=0 to 70°C, K9XXG08XXD-XIB0:TA=-40 to 85°C)
Parameter
K9F4G08U0D(3.3V)
Symbol
Min
Typ.
Max
Unit
Supply Voltage
VCC
2.7
3.3
3.6
V
Supply Voltage
VSS
0
0
0
V
2.3 DC AND OPERATING CHARACTERISTICS(Recommended operating conditions otherwise noted.)
3.3V
Parameter
Symbol
Test Conditions
tRC=50ns, CE=VIL
IOUT=0mA
Min
Typ
Max
-
15
30
Page Read with Serial
Access
ICC1
Program
ICC2
-
-
15
30
Erase
ICC3
-
-
15
30
Stand-by Current(TTL)
ISB1
-
-
1
Stand-by Current(CMOS)
ISB2
-
10
50
±10
Operating
Current
CE=VIH, WP=PRE=0V/VCC
CE=VCC-0.2,
WP=PRE=0V/VCC
Input Leakage Current
ILI
VIN=0 to Vcc(max)
-
-
Output Leakage Current
ILO
VOUT=0 to Vcc(max)
-
-
Input High Voltage
VIH*
-
μA
±10
2.0
-
-0.3
-
0.8
2.4
-
-
+0.3
Input Low Voltage, All inputs
VIL*
Output High Voltage Level
VOH
K9F4G08U0D :IOH=-400μA
Output Low Voltage Level
VOL
K9F4G08U0D :IOL=2.1mA
-
-
0.4
Output Low Current(R/B)
IOL(R/B)
K9F4G08U0D :VOL=0.4V
8
10
-
- 10 -
mA
VCC
-
NOTE :
1) VIL can undershoot to -0.4V and VIH can overshoot to VCC + 0.4V for durations of 20 ns or less.
2) Typical value is measured at Vcc=/3.3V, TA=25°C. Not 100% tested.
3) The typical value of the K9K8G08U1D's ISB2 is 20μA and the maximum value is 100μA.
4) The typical value of the K9K8G08U0D's ISB2 is 20μA and the maximum value is 100μA.
5) The typical value of the K9WAG08U1D's ISB2 is 40μA and the maximum value is 200μA.
Unit
V
mA
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
2.4 Valid Block
Parameter
Symbol
Min
Typ.
Max
4,016
K9F4G08U0D
K9K8G08U0D
8,032
NVB
K9K8G08U1D
K9WAG08U1D
Unit
4,096
-
8,192
16,064
Blocks
16,384
NOTE :
1) The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both
cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. Refer to the
attached technical notes for appropriate management of invalid blocks.
2) The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/528Byte ECC.
3) The number of valid block is on the basis of single plane operations, and this may be decreased with two plane operations.
2.5 Ac Test Condition
(K9XXG08UXD-XCB0 :TA=0 to 70°C, K9F4G08UXD-XIB0:TA=-40 to 85°C, K9XXG08UXD: Vcc=2.7V~3.6V unless otherwise noted)
Parameter
K9XXG08UXD
Input Pulse Levels
0V to Vcc
Input Rise and Fall Times
5ns
Input and Output Timing Levels
Vcc/2
Output Load
1 TTL GATE and CL=50pF
2.6 Capacitance(TA=25°C, VCC=3.3V, f=1.0MHz)
Item
Input/Output Capacitance
Input Capacitance
Symbol
Test Condition
Min
Max
Unit
CI/O
VIL=0V
-
8
pF
CI/O(W)*
VIL=0V
-
5
pF
CIN
VIN=0V
-
8
pF
CIN(W)*
VIN=0V
-
5
pF
NOTE :
1) Capacitance is periodically sampled and not 100% tested.
2) CI/O(W)* and CIN(W)* are tested at wafer level.
2.7 Mode Selection
CLE
ALE
CE
RE
WP
H
L
L
WE
H
X
L
H
L
H
X
H
L
L
H
H
L
H
L
H
H
L
L
L
H
H
Data Input
X
Data Output
X
During Read(Busy)
L
L
L
H
X
X
X
X
H
Mode
Read Mode
Write Mode
Command Input
Address Input(5clock)
Command Input
Address Input(5clock)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/VCC(2)
NOTE :
1) X can be VIL or VIH.
2) WP should be biased to CMOS high or CMOS low for standby.
- 11 -
Stand-by
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
Advance Rev. 0.2
datasheet
FLASH MEMORY
2.8 Program / Erase Characteristics
Symbol
Min
Typ
Max
Unit
Program Time
Parameter
tPROG
-
250
750
μs
Dummy Busy Time for Two-Plane Page Program
tDBSY
-
0.5
1
μs
Number of Partial Program Cycles
Nop
-
-
4
cycles
Block Erase Time
tBERS
-
2.0
10
ms
NOTE :
1) Typical value is measured at Vcc=3.3V, TA=25°C. Not 100% tested.
2) Typical program time is defined as the time within which more than 50% of the whole pages are programmed at 3.3V Vcc and 25°C temperature.
2.9 AC Timing Characteristics for Command / Address / Data Input
Parameter
Min
Max
Unit
CLS(1)
12
-
ns
CLE Hold Time
tCLH
5
-
ns
CE Setup Time
t
20
-
ns
CLE Setup Time
Symbol
t
CS(1)
CE Hold Time
tCH
5
-
ns
WE Pulse Width
tWP
12
-
ns
ALE Setup Time
tALS(1)
12
-
ns
ALE Hold Time
tALH
5
-
ns
Data Setup Time
t
DS(1)
12
-
ns
tDH
5
-
ns
Write Cycle Time
tWC
25
-
ns
WE High Hold Time
tWH
10
-
ns
ADL(2)
70
-
ns
Data Hold Time
Address to Data Loading Time
t
NOTE :
1) The transition of the corresponding control pins must occur only once while WE is held low
2) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle
- 12 -
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
Advance Rev. 0.2
datasheet
FLASH MEMORY
2.10 AC Characteristics for Operation
Parameter
Symbol
Min
Max
Unit
tR
-
25
μs
ALE to RE Delay
tAR
10
-
ns
CLE to RE Delay
tCLR
10
-
ns
Ready to RE Low
tRR
20
-
ns
RE Pulse Width
tRP
12
-
ns
Data Transfer from Cell to Register
WE High to Busy
tWB
-
100
ns
Read Cycle Time
tRC
25
-
ns
RE Access Time
tREA
-
20
ns
CE Access Time
tCEA
-
25
ns
RE High to Output Hi-Z
tRHZ
-
100
ns
CE High to Output Hi-Z
tCHZ
-
30
ns
RE High to Output Hold
tRHOH
15
-
ns
RE Low to Output Hold
tRLOH
5
-
ns
CE High to Output Hold
tCOH
15
-
ns
RE High Hold Time
tREH
10
-
ns
tIR
0
-
ns
RE High to WE Low
Output Hi-Z to RE Low
tRHW
100
-
ns
WE High to RE Low
tWHR
60
-
ns
Device Resetting Time(Read/Program/Erase)
tRST
-
5/10/500(1)
μs
NOTE :
1) If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5μs.
- 13 -
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
Advance Rev. 0.2
FLASH MEMORY
3.0 NAND Flash Technical Notes
3.1 Initial Invalid Block(s)
Initial invalid blocks are defined as blocks that contain one or more initial invalid bits whose reliability is not guaranteed by Samsung. The information
regarding the initial invalid block(s) is called the initial invalid block information. Devices with initial invalid block(s) have the same quality level as devices
with all valid blocks and have the same AC and DC characteristics. An initial invalid block(s) does not affect the performance of valid block(s) because it
is isolated from the bit line and the common source line by a select transistor. The system design must be able to mask out the initial invalid block(s) via
address mapping. The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/528Byte
ECC.
3.2 Identifying Initial Invalid Block(s)
All device locations are erased(FFh) except locations where the initial invalid block(s) information is written prior to shipping. The initial invalid block(s)
status is defined by the 1st byte in the spare area. Samsung makes sure that either the 1st or 2nd page of every initial invalid block has non-FFh data at
the column address of 2048. Since the initial invalid block information is also erasable in most cases, it is impossible to recover the information once it
has been erased. Therefore, the system must be able to recognize the initial invalid block(s) based on the original initial invalid block information and create the initial invalid block table via the following suggested flow chart(Figure 3). Any intentional erasure of the original initial invalid block information is
prohibited.
Start
Set Block Address = 0
Increment Block Address
*
Create (or update)
Initial
Invalid Block(s) Table
No
Check "FFh" at the column address 2048
of the 1st and 2nd page in the block
Check "FFh"
Yes
No
Last Block ?
Yes
End
[Figure 3] Flow chart to create initial invalid block table
- 14 -
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
Advance Rev. 0.2
FLASH MEMORY
3.3 Error in write or read operation
Within its life time, additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual data.The following
possible failure modes should be considered to implement a highly reliable system. In the case of status read failure after erase or program, block
replacement should be done. Because program status fail during a page program does not affect the data of the other pages in the same block, block
replacement can be executed with a page-sized buffer by finding an erased empty block and reprogramming the current target data and copying the rest
of the replaced block. In case of Read, ECC must be employed. To improve the efficiency of memory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block replacement. The said additional block failure rate does not include those
reclaimed blocks.
Failure Mode
Write
Read
ECC
Detection and Countermeasure sequence
Erase Failure
Status Read after Erase --> Block Replacement
Program Failure
Status Read after Program --> Block Replacement
Single Bit Failure
Verify ECC -> ECC Correction
: Error Correcting Code --> Hamming Code etc.
Example) 1bit correction & 2bit detection
Program Flow Chart
Start
Write 80h
Write Address
Write Data
Write 10h
Read Status Register
I/O 6 = 1 ?
or R/B = 1 ?
*
Program Error
No
Yes
No
I/O 0 = 0 ?
Yes
Program Completed
*
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
- 15 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
NAND Flash Technical Notes (Continued)
Erase Flow Chart
Read Flow Chart
Start
Start
Write 60h
Write 00h
Write Block Address
Write Address
Write D0h
Write 30h
Read Status Register
Read Data
ECC Generation
No
I/O 6 = 1 ?
or R/B = 1 ?
No
*
Erase Error
No
Verify ECC
Reclaim the Error
Yes
Yes
I/O 0 = 0 ?
Page Read Completed
Yes
Erase Completed
*
: If erase operation results in an error, map out
the failing block and replace it with another block.
Block Replacement
1st
∼
(n-1)th
nth
{
Block A
1
an error occurs.
(page)
1st
∼
(n-1)th
nth
Buffer memory of the controller.
{
Block B
2
(page)
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the data in the 1st ~ (n-1)th page to the same location of another free block. (Block ’B’)
* Step3
Then, copy the nth page data of the Block ’A’ in the buffer memory to the nth page of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid block’ table or other appropriate scheme.
- 16 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
3.4 Addressing for program operation
Within a block, the pages must be programmed consecutively from the LSB (least significant bit) page of the block to MSB (most significant bit) pages of
the block. Random page address programming is prohibited. In this case, the definition of LSB page is the LSB among the pages to be programmed.
Therefore, LSB doesn’t need to be page 0.
Page 63
(64)
Page 31
Page 63
(64)
:
:
(32)
Page 31
(1)
:
Page 2
Page 1
Page 0
:
(3)
(2)
(1)
Page 2
Page 1
Page 0
Data register
Data register
From the LSB page to MSB page
DATA IN: Data (1)
(3)
(32)
(2)
Ex.) Random page program (Prohibition)
Data (64)
DATA IN: Data (1)
- 17 -
Data (64)
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
3.5 System Interface Using CE don’t-care.
For an easier system interface, CE may be inactive during the data-loading or serial access as shown below. The internal 8,628byte data registers are
utilized as separate buffers for this operation and the system design gets more flexible. In addition, for voice or audio applications which use slow cycle
time in the order of μ-seconds, de-activating CE during the data-loading and serial access would provide significant savings in power consumption.
≈
≈
CLE
≈
Program Operation with CE don’t-care
I/Ox
≈
ALE
80h
Address(5Cycles)
tCS
≈
≈≈
WE
≈ ≈
≈
CE
≈ ≈
CE don’t-care
Data Input
tCH
Data Input
10h
tCEA
CE
CE
tREA
tWP
RE
WE
I/O0~7
out
≈
CLE
≈
Read Operation with CE don’t-care
CE don’t-care
≈
ALE
tR
≈
R/B
≈≈
≈ ≈ ≈
RE
≈
WE
I/Ox
≈ ≈
CE
00h
Address(5Cycle)
Data Output(serial access)
30h
- 18 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.0 TIMING DIAGRAMS
4.1 Command Latch Cycle
CLE
tCLS
tCLH
tCS
tCH
CE
tWP
WE
tALH
tALS
ALE
tDH
tDS
I/Ox
Command
4.2 Address Latch Cycle
tCLS
CLE
tCS
tWC
tWC
tWC
tWC
CE
tWP
tWP
WE
tWH
tALH
tALS
tALS
tWP
tWP
tALH
tWH
tALS
tWH
tALH
tALS
tWH
tALH
tALS
tALH
ALE
tDS
I/Ox
tDH
Col. Add1
tDS
tDH
Col. Add2
- 19 -
tDS
tDH
Row Add1
tDS
tDH
Row Add2
tDS
tDH
Row Add3
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.3 Input Data Latch Cycle
tCLH
≈
CLE
tCH
≈
CE
tWC
≈
ALE
tALS
tWP
tWH
tDH
tDS
tDH
tDS
tDH
≈
tDS
tWP
≈
tWP
WE
I/Ox
DIN final
DIN 1
≈
DIN 0
4.4 * Serial Access Cycle after Read(CLE=L, WE=H, ALE=L)
tRC
≈
CE
tREA
≈
tREH
tREA
tCHZ
tREA
RE
tRHZ
tRHZ
I/Ox
Dout
Dout
≈
tRHOH
≈
tRR
R/B
NOTE :
1) Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
2) tRLOH is valid when frequency is higher than 20MHz.
tRHOH starts to be valid when frequency is lower than 20MHz.
- 20 -
Dout
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.5 Serial Access Cycle after Read(EDO Type, CLE=L, WE=H, ALE=L)
≈
CE
tRC
tCHZ
tREH
≈
tRP
RE
tREA
tRHOH
tRLOH
≈
tCEA
I/Ox
tRHZ
tREA
Dout
≈
Dout
≈
tRR
R/B
NOTE :
1) Transition is measured at ±200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
2) tRLOH is valid when frequency is higher than 20MHz.
tRHOH starts to be valid when frequency is lower than 20MHz.
4.6 Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tWP
tCH
WE
tCEA
tCHZ
tWHR
RE
tDS
I/Ox
tDH
tIR
70h/F1h
tREA
tRHZ
tRHOH
Status Output
- 21 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.7 Read Operation
tCLR
CLE
CE
tWC
WE
tWB
tAR
ALE
tR
tRHZ
tRC
≈
RE
I/Ox
00h
Col. Add1
Col. Add2
Row Add1
Column Address
Row Add2 Row Add3
30h
Dout N
Dout N+1
Row Address
≈ ≈
tRR
Dout M
Busy
R/B
4.8 Read Operation(Intercepted by CE)
tCLR
CLE
CE
tCSD
WE
tCHZ
tWB
tAR
ALE
tRC
tR
RE
tRR
I/Ox
00h
Col. Add1
Col. Add2
Column Address
Row Add1
Row Add2 Row Add3
Dout N
30h
Row Address
Busy
R/B
- 22 -
Dout N+1
Dout N+2
R/B
I/Ox
RE
ALE
WE
CE
CLE
00h
Col. Add1
Col. Add2
Column Address
Row Add2 Row Add3
Row Address
Row Add1
30h
Busy
tRR
tR
tWB
tAR
Dout N
tRC
Dout N+1
tRHW
05h
Col Add1
Col Add2
Column Address
E0h
tREA
tWHR
tCLR
Dout M
Dout M+1
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
4.9 Random Data Output In a Page
- 23 -
Advance Rev. 0.2
FLASH MEMORY
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.10 Page Program Operation
CLE
CE
tWC
≈
tWC
tWC
WE
tWB
tADL
tPROG
tWHR
ALE
I/Ox
80h
Co.l Add1 Col. Add2
SerialData
Column Address
Input Command
Row Add1
Row Add2 Row Add3
Row Address
≈ ≈
RE
Din
Din
N
M
1 up to m Byte
Serial Input
70h
NOTE :
tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
- 24 -
I/O0
Read Status
Command
≈
R/B
10h
Program
Command
I/O0=0 Successful Program
I/O0=1 Error in Program
Col. Add1
Col. Add2
Serial Data
Column Address
Input Command
80h
Row Add2 Row Add3
Row Address
Row Add1
tWC
tADL
tWC
Din
Col. Add1 Col. Add2
85h
M
Serial Input Random Data Column Address
Input Command
Din
N
≈
≈ ≈
NOTE :
1) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
R/B
I/Ox
RE
ALE
WE
tWC
tADL
Din
K
Serial Input
Din
J
≈
≈ ≈
CE
10h
Program
Command
tWB
tPROG
≈
CLE
I/O0
I/O0=0 Successful Program
I/O0=1 Error in Program
Read Status
Command
70h
tWHR
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
4.11 Page Program Operation with Random Data Input
- 25 -
Advance Rev. 0.2
FLASH MEMORY
00h
tWC
Column Address
Row Address
Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3
35h
tWB
tR
Busy
Data 1
tRC
≈ ≈
Data N
85h
Column Address
Row Address
Data 1
tADL
Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3
Copy-Back Data
Input Command
NOTE :
1) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
R/B
I/Ox
RE
ALE
WE
CE
≈
CLE
Data N
10h
tWB
70h
I/Ox
tWHR
Read Status Command
tPROG
I/O0=0 Successful Program
I/O0=1 Error in Program
Busy
≈
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
4.12 Copy-Back Program Operation
- 26 -
Advance Rev. 0.2
FLASH MEMORY
≈ ≈
00h
tWC
Column Address
Row Address
Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3
35h
tWB
tR
Busy
Data 1
tRC
≈ ≈
Data N
85h
Column Address
Row Address
Data 1
tADL
Col. Add1 Col. Add2 Row Add1 Row Add2 Row Add3
Copy-Back Data
Input Command
NOTE :
1) tADL is the time from the WE rising edge of final address cycle to the WE rising edge of first data cycle.
R/B
I/Ox
RE
ALE
WE
CE
≈
CLE
Data N
10h
tWB
70h
I/Ox
tWHR
Read Status Command
tPROG
I/O0=0 Successful Program
I/O0=1 Error in Program
Busy
≈
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
4.13 Copy-Back Program Operation with Random Data Input
- 27 -
Advance Rev. 0.2
FLASH MEMORY
≈ ≈
R/B
I/Ox
RE
ALE
Din
M
- 28 80h
Col Add1,2 & Row Add 1,2,3
8,628 Byte Data
Address & Data Input
11h
typ. 500ns
max. 1μs
Note
tDBSY
81h
NOTE :
Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
I/O0~7
R/B
tDBSY
tDBSY :
11h
Program
1 up to 8,628 Byte Command
Data Serial Input (Dummy)
Din
N
≈
≈ ≈
Ex.) Two-Plane Page Program
Page Row Address
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
Serial Data Column Address
Input Command
80h
tWB
≈
WE
tWC
81h
Din
N
Col Add1,2 & Row Add 1,2,3
8,628 Byte Data
Address & Data Input
Col Add1 Col Add2 Row Add1 Row Add2 Row Add3
≈
≈ ≈
CE
10h
tPROG
tPROG
Program Confirm
Command
(True)
10h
Din
M
tWB
≈
CLE
I/O
70h/F1h
I/O0=0 Successful Program
I/O0=1 Error in Program
Read Status Command
70h/F1h
tWHR
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
4.14 Two-Plane Page Program Operation
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.15 Block Erase Operation
CLE
CE
tWC
WE
tWB
tBERS
tWHR
ALE
RE
I/Ox
60h
Row Add1
Row Add2 Row Add3
D0h
70h
I/O 0
Row Address
Busy
Auto Block Erase
Setup Command
≈
R/B
Erase Command
Read Status
Command
- 29 -
I/O0=0 Successful Erase
I/O0=1 Error in Erase
Row Address
60h
tWC
- 30 -
I/O0~7
R/B
60h
Row Add1,2,3
Address
60h
Row Add1,2,3
D0h
~ A25
A9Address
D0h
D0h
tWB
tBERS
Erase Confirm Command
Row Address
Row Add1 Row Add2 Row Add3
Block Erase Setup Command2
Row Add1 Row Add2 RowD0h
Add3
Block Erase Setup Command1
60h
tWC
Ex.) Address Restriction for Two-Plane Block Erase Operation
R/B
I/OX
RE
ALE
WE
CE
CLE
70h/F1h
Busy
tBERS
I/O 0
Read Status Command
I/O 0 = 0 Successful Erase
I/O 0 = 1 Error in Erase
70h/F1h
tWHR
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
4.16 Two-Plane Block Erase Operation
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
4.17 Read ID Operation
CLE
CE
WE
tAR
ALE
RE
tREA
I/Ox
00h
90h
Read ID Command
Address 1cycle
Device
Code
ECh
Maker Code
3rd cyc.
4th cyc.
5th cyc.
6th cyc.
Device Code
Device
Device Code (2nd Cycle)
3rd Cycle
4th Cycle
5th Cycle
K9F4G08U0D
DCh
10h
54h
K9K8G08U0D
D3h
11h
58h
K9K8G08U1D
DCh
10h
K9WAG08U1D
D3h
11h
NOTE :
1) When reading the 6th cycle of Read ID, may acquire the "ECh" vlalue
- 31 -
95h
54h
58h
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
Description
1 Byte
2nd Byte
3rd Byte
4th Byte
5th Byte
st
Maker Code
Device Code
Internal Chip Number, Cell Type, Number of Simultaneously Programmed Pages, Etc
Page Size, Block Size,Redundant Area Size, Organization, Serial Access Minimum
Plane Number, Plane Size
3rd ID Data
Description
I/O7
I/O6
I/O5 I/O4
I/O3 I/O2
I/O1 I/O0
0
0
1
1
Internal Chip Number
1
2
4
8
Cell Type
2 Level Cell
4 Level Cell
8 Level Cell
16 Level Cell
Number of
Simultaneously
Programmed Pages
1
2
4
8
Interleave Program
Between multiple chips
Not Support
Support
Cache Program
Not Support
Support
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
4th ID Data
Description
Page Size
(w/o redundant area )
1KB
2KB
4KB
8KB
Block Size
(w/o redundant area )
64KB
128KB
256KB
512KB
Redundant Area Size
( byte/512byte)
8
16
Organization
x8
x16
Serial Access Minimum
50ns/30ns
25ns
Reserved
Reserved
I/O7
I/O6
I/O5 I/O4
I/O3
I/O2
I/O1 I/O0
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
5th ID Data
Description
Plane Number
1
2
4
8
Plane Size
(w/o redundant Area)
64Mb
128Mb
256Mb
512Mb
1Gb
2Gb
4Gb
8Gb
Reserved
I/O7
I/O6 I/O5 I/O4
I/O3 I/O2
0
0
1
1
0
0
0
0
1
1
1
1
0
- 32 -
0
0
1
1
0
0
1
1
I/O1
I/O0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
5.0 DEVICE OPERATION
5.1 Page Read
Page read is initiated by writing 00h-30h to the command register along with five address cycles. After initial power up, 00h command is latched. Therefore only five address cycles and 30h command initiates that operation after initial power up. The 2,112 bytes of data within the selected page are transferred to the data registers in less than 25μs(tR). The system controller can detect the completion of this data transfer(tR) by analyzing the output of R/B
pin. Once the data in a page is loaded into the data registers, they may be read out in 25ns cycle time by sequentially pulsing RE. The repetitive high to
low transitions of the RE clock make the device output the data starting from the selected column address up to the last column address.
The device may output random data in a page instead of the consecutive sequential data by writing random data output command. The column address
of next data, which is going to be out, may be changed to the address which follows random data output command. Random data output can be operated
multiple times regardless of how many times it is done in a page.
≈
CLE
≈
CE
≈≈
WE
≈
ALE
RE
I/Ox
tR
≈
R/B
00h
Address(5Cycle)
Data Output(Serial Access)
30h
Col. Add.1,2 & Row Add.1,2,3
Data Field
Spare Field
[Figure 4] Read Operation
- 33 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
tR
R/B
RE
I/Ox
Address
5Cycles
00h
Data Output
30h
05h
Col. Add.1,2 & Row Add.1,2,3
Address
2Cycles
E0h
Data Output
Col. Add.1,2
Data Field
Data Field
Spare Field
Spare Field
[Figure 5] Random Data Output In a Page
5.2 Page Program
The device is programmed basically on a page basis, but it does allow multiple partial page programming of a word or consecutive bytes up to 2,112, in a
single page program cycle. The number of consecutive partial page programming operation within the same page without an intervening erase operation
must not exceed 4 times for a single page. The addressing should be done in sequential order in a block. A page program cycle consists of a serial data
loading period in which up to 2,112bytes of data may be loaded into the data register, followed by a non-volatile programming period where the loaded
data is programmed into the appropriate cell.
The serial data loading period begins by inputting the Serial Data Input command(80h), followed by the five cycle address inputs and then serial data
loading. The words other than those to be programmed do not need to be loaded. The device supports random data input in a page. The column address
for the next data, which will be entered, may be changed to the address which follows random data input command(85h). Random data input may be
operated multiple times regardless of how many times it is done in a page. The Page Program confirm command(10h) initiates the programming process.
Writing 10h alone without previously entering the serial data will not initiate the programming process. The internal write state controller automatically executes the algorithms and timings necessary for program and verify, thereby freeing the system controller for other tasks. Once the program process starts,
the Read Status Register command may be entered to read the status register. The system controller can detect the completion of a program cycle by
monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. Only the Read Status command and Reset command are valid while programming is in progress. When the Page Program is complete, the Write Status Bit(I/O 0) may be checked(Figure 6). The internal write verify detects only
errors for "1"s that are not successfully programmed to "0"s. The command register remains in Read Status command mode until another valid command
is written to the command register.
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
10h
70h
Pass
I/O0
Col. Add.1,2 & Row Add.1,2,3
"1"
Data
Fail
[Figure 6] Program & Read Status Operation
- 34 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
tPROG
R/B
"0"
I/Ox
80h
Address & Data Input
Address & Data Input
85h
10h
Col. Add.1,2
Data
Col. Add.1,2 & Row Add1,2,3
Data
Pass
I/O0
70h
"1"
Fail
[Figure 7] Random Data Input In a Page
5.3 Copy-back Program
Copy-Back program with Read for Copy-Back is cond to quickly and efficiently rewrite data stored in one page without data re-loading when the bit error
is not in data stored. Since the time-consuming re-loading cycles are removed, the system performance is improved. The benefit is especially obvious
when a portion of a block is updated and the rest of the block also needs to be copied to the newly assigned free block. Copy-Back operation is a sequential execution of Read for Copy-Back and of copy-back program with the destination page address. A read operation with "35h" command and the
address of the source page moves the whole 2,112-byte data into the internal data buffer. A bit error is checked by sequential reading the data output. In
the case where there is no bit error, the data do not need to be reloaded. Therefore Copy-Back program operation is initiated by issuing Page-Copy DataInput command (85h) with destination page address. Actual programming operation begins after Program Confirm command (10h) is issued. Once the
program process starts, the Read Status Register command (70h) may be entered to read the status register. The system controller can detect the completion of a program cycle by monitoring the R/B output, or the Status bit(I/O 6) of the Status Register. When the Copy-Back Program is complete, the
Write Status Bit(I/O 0) may be checked(Figure 8 & Figure 9). The command register remains in Read Status command mode until another valid command is written to the command register.
During copy-back program, data modification is possible using random data input command (85h) as shown in Figure 9.
tR
tPROG
≈
R/B
00h
Add.(5Cycles)
Data Output
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address
≈
I/Ox
85h
Add.(5Cycles)
10h
70h
"0"
I/O0
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Pass
"1"
Fail
[Figure 8] Page Copy-Back Program Operation
tPROG
tR
≈
R/B
00h
Add.(5Cycles)
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address
Data Output
≈
I/Ox
85h
Add.(5Cycles)
Data
Col. Add.1,2 & Row Add.1,2,3
Destination Address
85h
Add.(2Cycles)
10h
There is no limitation for the number of repetition.
[Figure 9] Page Copy-Back Program Operation with Random Data Input
- 35 -
Data
Col. Add.1,2
70h
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
5.4 Block Erase
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup command(60h). Only
address A18 to A29 is valid while A12 to A17 is ignored. The Erase Confirm command(D0h) following the block address loading initiates the internal erasing
process. This two-step sequence of setup followed by execution command ensures that memory contents are not accidentally erased due to external
noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When the erase operation is
completed, the Write Status Bit(I/O 0) may be checked. Figure 10 details the sequence.
tBERS
R/B
"0"
60h
I/Ox
Address Input(3Cycle)
Pass
I/O0
70h
D0h
"1"
Row Add 1,2,3
Fail
[Figure 10] Block Erase Operation
5.5 Two-plane Page Program
Two-Plane Page Program is an extension of Page Program, for a single plane with 2112 byte page registers. Since the device is equipped with two memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two pages.
After writing the first set of data up to 2112 byte into the selected page register, Dummy Page Program command (11h) instead of actual Page Program
command (10h) is inputted to finish data-loading of the first plane. Since no programming process is involved, R/B remains in Busy state for a short period
of time(tDBSY). Read Status command (70h/F1h) may be issued to find out when the device returns to Ready state by polling the Ready/Busy status bit(I/
O 6). Then the next set of data for the other plane is inputted after the 81h command and address sequences. After inputting data for the last plane, actual
True Page Program(10h) instead of dummy Page Program command (11h) must be followed to start the programming process. The operation of R/B and
Read Status is the same as that of Page Program. Althougth two planes are programmed simultaneously, pass/fail is not available for each page when
the program operation completes. Status bit of I/O 0 is set to "1" when any of the pages fails.
Restriction in addressing with Two-Plane Page Program is shown is Figure 11.
tDBSY
R/B
I/O0 ~ 7
80h
Address & Data Input
11h
tPROG
81h
Note*2
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
Address & Data Input
A0 ~ A11 : Valid
A12 ~ A17 : Valid
A18
: Fixed ’High’
A19 ~ A29 : Valid
NOTE :1. It is noticeable that same row address except for A18 is applied to the two blocks
2. Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
Data
Input
80h
11h
81h
10h
Plane 0
(2048 Block)
Plane 1
(2048 Block)
Block 0
Block 1
Block 2
Block 3
Block 4092
Block 4094
Block 4093
Block 4095
[Figure 11] Two-Plane Page Program
- 36 -
10h
70h/F1h
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
5.6 Two-plane Block Erase
Basic concept of Two-Plane Block Erase operation is identical to that of Two-Plane Page Program. Up to two blocks, one from each plane can be simultaneously erased. Standard Block Erase command sequences (Block Erase Setup command(60h) followed by three address cycles) may be repeated up
to twice for erasing up to two blocks. Only one block should be selected from each plane. The Erase Confirm command(D0h) initiates the actual erasing
process. The completion is detected by monitoring R/B pin or Ready/Busy status bit (I/O 6).
tBERS
R/B
I/OX
60h
60h
Address (3 Cycle)
D0h
Address (3 Cycle)
A12 ~ A17 : Fixed ’Low’
A18
:Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
70h/F1h
I/O0
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’High’
A19 ~ A29 : valid
"0"
Pass
"1"
Fail
[Figure 12] Two-Plane Block Erase Operation
5.7 Two-plane Copy-back Program
Two-Plane Copy-Back Program is an extension of Copy-Back Program, for a single plane with 2112 byte page registers. Since the device is equipped
with two memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two pages.
tR
tR
Add.(5Cycles)
00h
Data Output
35h
I/Ox
Add.(5Cycles)
85h
1
11h
Data Output
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane1
Note2
Add.(5Cycles)
81h
10h
Col. Add.1,2 & Row Add.1,2,3
Destination Address
Col. Add.1,2 & Row Add.1,2,3
Destination Address
A0 ~ A11 : Fixed ’Low’
A12 ~ A17 : Fixed ’Low’
: Fixed ’Low’
A18
A19 ~ A29 : Fixed ’Low’
A0 ~ A11 : Fixed ’Low’
A12 ~ A17 : Valid
A18
: Fixed ’High’
A19 ~ A29 : Valid
Plane0
1
tPROG
tDBSY
R/B
≈
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane0
≈
Add.(5Cycles)
≈
00h
I/Ox
≈
R/B
70h/F1h
Plane1
Source page
Source page
Target page
(1) : Read for Copy Back On Plane0
Target page
(2) : Read for Copy Back On Plane1
(1)
Data Field
(3)
(2)
Spare Field
(3)
Data Field
(3) : Two-Plane Copy-Back Program
Spare Field
[Figure 13] Two-Plane Copy-Back Program Operation
NOTE :
1) Copy-Back Program operation is allowed only within the same memory plane.
2) Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
- 37 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
tR
tR
Add.(5Cycles)
35h
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane0
Data Output
00h
Add.(5Cycles)
Data Output
35h
≈
00h
≈
I/Ox
≈
≈
R/B
Col. Add.1,2 & Row Add.1,2,3
Source Address On Plane1
1
tDBSY
R/B
I/Ox
85h
Add.(5Cycles)
Data
85h
Col. Add.1,2 & Row Add.1,2,3
1
Add.(2Cycles)
Data
11h
Note2
Col. Add.1,2
2
Destination Address
A0 ~ A11 : Valid
A12 ~ A17 : Fixed ’Low’
A18
: Fixed ’Low’
A19 ~ A29 : Fixed ’Low’
tPROG
R/B
I/Ox
81h
2
Add.(5Cycles)
Data
85h
Col. Add.1,2 & Row Add.1,2,3
Add.(2Cycles)
Data
10h
Col. Add.1,2
Destination Address
A0 ~ A11 : Valid
A12 ~ A17 : Valid
A18
: Fixed ’High’
A19 ~ A29 : Valid
[Figure 14] Two-Plane Copy-Back Program Operation with Random Data Input
NOTE:
1) Copy-Back Program operation is allowed only within the same memory plane.
2) Any command between 11h and 81h is prohibited except 70h/F1h and FFh.
- 38 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
5.8 Read Status
The device contains a Status Register which may be read to find out whether program or erase operation is completed, and whether the program or erase
operation is completed successfully. After writing 70h/F1h command to the command register, a read cycle outputs the content of the Status Register to
the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the system to poll the progress of each device in multiple
memory connections even when R/B pins are common-wired. RE or CE does not need to be toggled for updated status. Refer to Table 2 for specific Status Register definitions and Table 3 for specific F1h Status Register definitions. The command register remains in Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, the read command(00h) should be given before starting read
cycles.
[Table 2] Status Register Definition for 70h Command
I/O
Page Program
Block Erase
Read
Definition
I/O 0
Pass/Fail
Pass/Fail
Not use
Pass : "0"
I/O 1
Not use
Not use
Not use
Don’t -cared
I/O 2
Not use
Not use
Not use
Don’t -cared
I/O 3
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Don’t -cared
Don’t -cared
I/O 5
Not Use
Not Use
Not Use
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
I/O 7
Write Protect
Write Protect
Write Protect
Protected : "0"
Fail : "1"
Ready : "1"
Not Protected : "1"
NOTE :
1) I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
[Table 3] Status Register Definition for F1h Command
I/O No.
Page Program
Block Erase
Read
I/O 0
Chip Pass/Fail
Chip Pass/Fail
Not use
Pass : "0"
Definition
Fail : "1"
I/O 1
Plane0 Pass/Fail
Plane0 Pass/Fail
Not use
Pass : "0"
Fail : "1"
I/O 2
Plane1 Pass/Fail
Plane1 Pass/Fail
Not use
Pass : "0"
Fail : "1"
I/O 3
Not Use
Not Use
Not Use
Don’t -cared
I/O 4
Not Use
Not Use
Not Use
Don’t -cared
I/O 5
Not Use
Not Use
Not Use
Don’t -cared
I/O 6
Ready/Busy
Ready/Busy
Ready/Busy
Busy : "0"
I/O 7
Write Protect
Write Protect
Write Protect
Protected : "0"
NOTE :
1) I/Os defined ’Not use’ are recommended to be masked out when Read Status is being executed.
- 39 -
Ready : "1"
Not Protected : "1" "1"otected
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
5.9 Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of 00h. Five read cycles
sequentially output the manufacturer code(ECh), and the device code and 3rd, 4th, 5th cycle ID respectively. The command register remains in Read ID
mode until further commands are issued to it. Figure 15 shows the operation sequence.
tCLR
CLE
tCEA
CE
WE
tAR
ALE
tWHR
RE
I/OX
90h
tREA
00h
ECh
Maker code
Address. 1cycle
Device
Code
4th Cyc.
3rd Cyc.
5th Cyc.
Device code
[Figure 15] Read ID Operation
Device
Device Code (2nd Cycle)
3rd Cycle
K9F4G08U0D
DCh
10h
4th Cycle
5th Cycle
54h
K9K8G08U0D
D3h
11h
K9K8G08U1D
DCh
10h
54h
58h
K9WAG08U1D
D3h
11h
58h
95h
NOTE :
1) When reading the 6th cycle of Read ID, may acquire the "ECh" vlalue
5.10 Reset
The device offers a reset feature, executed by writing FFh to the command register. When the device is in Busy state during random read, program or
erase mode, the reset operation will abort these operations. The contents of memory cells being altered are no longer valid, as the data will be partially
programmed or erased. The command register is cleared to wait for the next command, and the Status Register is cleared to value C0h when WP is high.
If the device is already in reset state a new reset command will be accepted by the command register. The R/B pin changes to low for tRST after the
Reset command is written. Refer to Figure 16 below.
tRST
R/B
I/OX
FFh
[Figure 16] RESET Operation
[Table 4] Device Status
Operation mode Mode
After Power-up
After Reset
00h Command is latched
Waiting for next command
- 40 -
Advance Rev. 0.2
datasheet
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
FLASH MEMORY
5.11 Ready/Busy
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random read completion. The R/
B pin is normally high but transitions to low after program or erase command is written to the command register or random read is started after address
loading. It returns to high when the internal controller has finished the operation. The pin is an open-drain driver thereby allowing two or more R/B outputs
to be Or-tied. Because pull-up resistor value is related to tr(R/B) and current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Figure 17). Its value can be determined by the following guidance.
Rp
VCC
ibusy
3.3V device - VOL : 0.4V, VOH : 2.4V
Ready Vcc
R/B
open drain output
VOH
CL
VOL
Busy
tf
tr
GND
Device
[Figure 17] Rp vs tr ,tf & Rp vs ibusy
@ Vcc = 2.7V, Ta = 25°C , CL = 30pF
@ Vcc = 3.3V, Ta = 25°C , CL = 50pF
2.4
Ibusy
2m
120
90
100n
tr
30
2.3
1K
tf
60
0.75
1m
150
100
100n
tr
0.55
2.3
2K
3K
Rp(ohm)
4K
1K
tf
0.6
3.6
3.6
2K
3K
Rp(ohm)
4K
3.6
Rp value guidance
3.2V
VCC(Max.) - VOL(Max.)
IOL + ΣIL
=
8mA + ΣIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
- 41 -
1m
0.8
50
2.3
Rp(min, 3.3V part) =
2m
1.2
3.6
2.3
200
Ibusy
200n
tr,tf [s]
1.1
Ibusy [A]
tr,tf [s]
200n
Ibusy [A]
2.3
K9F4G08U0D K9K8G08U1D
K9K8G08U0D K9WAG08U1D
datasheet
Advance Rev. 0.2
FLASH MEMORY
5.12 Data Protection & Power Up Sequence
≈
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector disables all functions
whenever Vcc is below about 2V(3.3V device). WP pin provides hardware protection and is recommended to be kept at VIL during power-up and powerdown. A recovery time of minimum 100μs is required before internal circuit gets ready for any command sequences as shown in Figure 18. The two step
command sequence for program/erase provides additional software protection.
~ 2.3V
~ 2.3V
High
≈
VCC
≈
WP
Don’t care
≈
WE
Operation
Ready/Busy
100μs
≈
5 ms max
Invalid
Don’t care
NOTE :
During the initialization, the device consumes a maximum current of 30mA (ICC1)
[Figure 18] AC Waveforms for Power Transition
- 42 -