Infrared Emitting Diodes(GaAs) KODENSHI KEL55L DIMENSIONS (Unit : mm) The KEL55L is a high-power GaAs IRED mounted in a clear plastic package. This LED emits infrared light through two plastic lenses on both sides of the package is ideally suited for use with VTR tape-end sensors. FEATURES •Compact •Low profile package •Low-cost •Sidelooking plastic package •Long-lead type APPLICATIONS •VTR type-end sensor MAXIMUM RATINGS Item Reverse voltage Forward current Pulse forward current *1 Power dissipation Operating temp. Storage temp. Soldering temp. *2 (Ta=25℃) Symbol Rating Unit VR IF IFP PD Topr. Tstg. Tsol. 5 50 1 75 -25~+85 -30~+85 260 V mA A mW ℃ ℃ ℃ *1. pulse width ：tw ≦100 μ sec.period ：T=10msec. *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Capacitance Radiant intensity Peak emission wavelength Spectral bandwidth 50% Half angle (Ta=25℃) Symbol Conditions VF IR Ct PO λp Δλ △θ IF=50mA VR=5V f=1MHz IF=20mA IF=20mA IF=20mA Min. 0.7 - - 1- Typ. Max. Unit. 1.3 1.5 10 V μ A pF mW/sr nm nm deg. 25 2.0 940 50 - - Infrared Emitting Diodes(GaAs) KEL55L Power dissipation Vs. Ambient temperature Relative intensity Vs. Wavelength Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Forward current vs. Forward voltage Radiant Pattern - 2-