2SA1381/KSA1381 PNP Epitaxial Silicon Transistor Applications • Audio, Voltage Amplifier and Current Source • CRT Display, Video Output • General Purpose Amplifier Features • • • • • • High Voltage : VCEO= -300V Low Reverse Transfer Capacitance : Cre= 2.3pF at VCB = -30V Excellent Gain Linearity for low THD High Frequency: 150MHz Full thermal and electrical Spice models are available Complement to 2SC3503/KSC3503 Absolute Maximum Ratings* Symbol TO-126 1 1. Emitter 2.Collector 3.Base Ta = 25°C unless otherwise noted Parameter Ratings Units BVCBO Collector-Base Voltage -300 V BVCEO Collector-Emitter Voltage -300 V BVEBO Emitter-Base Voltage -5 V IC Collector Current(DC) -100 mA ICP Collector Current(Pulse) -200 mA PC Total Device Dissipation, TC=25°C TC=125°C 7 1.2 W W TJ, TSTG Junction and Storage Temperature - 55 ~ +150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta=25°C unless otherwise noted Symbol Parameter RθJC Max. Units 17.8 °C/W Thermal Resistance, Junction to Case * Device mounted on minimum pad size hFE Classification Classification C D E F hFE 40 ~ 80 60 ~ 120 100 ~ 200 160 ~ 320 © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 www.fairchildsemi.com 1 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor March 2008 Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = - 10µA, IE = 0 - 300 V BVCEO Collecto- Emitter Breakdown Voltage IC = - 1mA, IB = 0 - 300 V BVEBO Emitter-Base Breakdown Voltage IE = - 10µA, IC = 0 -5 V ICBO Collector Cut-off Current VCB = - 200V, IE = 0 - 0.1 µA IEBO Emitter Cut-off Current VEB = - 4V, IC = 0 - 0.1 µA hFE DC Current Gain VCE = - 10V, IC = - 10mA VCE(sat) Collector-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA - 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = - 20mA, IB = - 2mA -1 V fT Current Gain Bandwidth Product VCE = - 30V, IC = - 10mA 150 MHz Cob Output Capacitance VCB = - 30V, f = 1MHz 3.1 pF Cre Reverse Transfer Capacitance VCB = - 30V, f = 1MHz 2.3 pF 40 320 * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% Ordering Information Part Number* Marking Package Packing Method Remarks 2SA1381CSTU 2SA1381C TO-126 TUBE hFE1 C grade 2SA1381DSTU 2SA1381D TO-126 TUBE hFE1 D grade 2SA1381ESTU 2SA1381E TO-126 TUBE hFE1 E grade 2SA1381FSTU 2SA1381F TO-126 TUBE hFE1 F grade KSA1381CSTU A1381C TO-126 TUBE hFE1 C grade KSA1381DSTU A1381D TO-126 TUBE hFE1 D grade KSA1381ESTU A1381E TO-126 TUBE hFE1 E grade KSA1381FSTU A1381F TO-126 TUBE hFE1 F grade * 1. Affix “-S-” means the standard TO126 Package.(see package dimensions). If the affix is ”-STS-” instead of “-S-”, that mean the short-lead TO126 package. 2. Suffix “-TU” means the tube packing, The Suffix “TU” could be replaced to other suffix character as packing method. © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 www.fairchildsemi.com 2 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor Electrical Characteristics* Ta=25°C unless otherwise noted IC[A], COLLECTOR CURRENT -20 -10 IB = -140µA IB = -120µA IC[A], COLLECTOR CURRENT -16 IB = -100µA IB = -80µA -12 IB = -60µA -8 IB = -40µA -4 IB = -20µA IB = -60µA IB = -50µA -8 IB = -40µA -6 IB = -30µA -4 IB = -20µA IB = -10µA -2 IB = 0µA -0 -0 -2 -4 -6 IB = 0µA -8 -10 -0 -0 VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN VCE = -10V 100 -10 -80 IC = 10 IB VBE(sat) -1 VCE(sat) -0.1 -0.01 -0.1 -100 -1 -10 -100 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage -160 1000 VCE = -30V VCE = -10V IC[mA], COLLECTOR CURRENT -140 100 10 1 -0.1 -1 -10 -100 -120 -100 -80 -60 -40 -20 -0 -0.0 -1000 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 VBE[V], BASE-EMITTER VOLTAGE IC[mA], COLLECTOR CURRENT Figure 5. Current Gain Bandwidth Product Figure 6. Base-Emitter On Voltage © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 -100 -10 IC[mA], COLLECTOR CURRENT fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT -60 Figure 2. Static Characteristic 1k -1 -40 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic 10 -0.1 -20 www.fairchildsemi.com 3 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor Typical Characteristics 100 100 f=1MHz Cre[pF], CAPACITANCE Cob[pF], CAPACITANCE IE=0 f=1MHz 10 1 0.1 -0.1 -1 -10 -100 10 1 0.1 -0.1 -1000 VCB[V], COLLECTOR-BASE VOLTAGE -1 -10 -100 -1000 VCB[V], COLLECTOR-BASE VOLTAGE Figure 7. Collector Output Capacitance Figure 8. Reverse Transfer Capacitance 1000 8 PC[W], POWER DISSIPATION 0 50 µs IC MAX. 100 DC c o 25 C) 10 = 25 (T a = D C (T IC[mA], COLLECTOR CURRENT 7 IC MAX. (Pulse) 1ms 10ms o C ) 1 1 10 100 5 o Tc=25 C 4 3 2 o TC=125 C 1 0 1000 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE T[ C], TEMPERATURE Figure 9. Safe Operating Area Figure 10. Power Derating © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 6 www.fairchildsemi.com 4 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor Typical Characteristics (Continued) 2SA1381/KSA1381 — PNP Epitaxial Silicon Transistor Package Dimensions 8.00 ±0.30 ±0.20 3.25 ±0.20 ø3.20 ±0.10 11.00 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 13.06 0.75 ±0.10 16.10 ±0.30 ±0.20 1.60 ±0.10 #1 2.28TYP [2.28±0.20] +0.10 0.50 –0.05 2.28TYP [2.28±0.20] Dimensions in Millimeters © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 2. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I31 © 2008 Fairchild Semiconductor Corporation 2SA1381/KSA1381 Rev. A1 www.fairchildsemi.com 6 2SA1381/KSA1381 PNP Epitaxial Silicon Transistor TRADEMARKS