KSC1623 KSC1623 Low Frequency Amplifier & High Frequency OSC. 3 • Complement to KSA812 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings 60 Units V VCEO VEBO Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 IC V Collector Current 100 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol ICBO Parameter Collector Cut-off Current Test Condition VCB=60V, IE=0 Min. Typ. Max. 0.1 Units µA 0.1 µA 90 200 600 IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=6V, IC=1mA VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.15 0.3 V VBE (sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 0.86 1.0 V 0.62 0.65 VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA fT Current Gain Bandwidth Product VCE=6V, IC=10mA 0.55 Cob Output Capacitance VCB=6V, IE=0, f=1MHz V 250 MHz 3 pF hFE Classification Classification O Y G L hFE 90 ~ 180 135 ~ 270 200 ~ 400 300 ~ 600 Marking C1 O hFE grade ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC1623 Typical Characteristics 100 100 VCE = 6V IB = 400µA IB = 350µA 80 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT 90 IB = 300µA 70 IB = 250µA 60 50 IB = 200µA 40 IB = 150µA IB = 100µA 30 20 IB = 50µA 10 10 1 0.1 0.0 0 0 4 8 12 16 20 0.2 hFE, DC CURRENT GAIN VCE = 6V 1000 100 10 1.0 1.2 100 1000 IC=10IB VBE(sat) 1000 VCE(sat) 10 1 IC[mA], COLLECTOR CURRENT 10 100 1000 IC[mA], COLLECTOR CURRENT Figure 3. DC current Gain Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 IE =0 10 1 0.1 1 10 100 VCB(V), COLLECTOR-BASE VOLTAGE Figure 5. Output Capacitance ©2002 Fairchild Semiconductor Corporation 1000 VCE=6V fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT f=1MHz Cob[pF], CAPACITANCE 0.8 Figure 2. Transfer Characteristic VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Charactersitic 10 0.6 VBE[V],BASE-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE 1 0.4 100 10 1 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, September 2002 KSC1623 Package Dimensions ±0.10 ±0.10 2.40 0.40 ±0.03 1.30 0.45~0.60 0.20 MIN SOT-23 0.03~0.10 0.38 REF 0.40 ±0.03 +0.05 0.12 –0.023 0.96~1.14 0.97REF 2.90 ±0.10 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1