KSC1675 KSC1675 FM/AM RF AMP, MIX, CONV,OSC,IF • • • • Collector-Base Voltage : VCEO=30V High Current Gain Bandwidth Product : fT=300MHz (TYP.) Low Collector Capacitance : COB=2.0pF (TYP.) Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 50 Units V VCEO VEBO Collector-Emitter Voltage 30 V Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 250 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC=10µA, IE=0 Min. 50 BVCEO Collector-Emitter Breakdown Voltage IC=5mA, IB=0 30 BVEBO Emitter-Base Breakdown Voltage IE=10µA, IC=0 5 ICBO Collector Cut-off Current VCB=50V, IE=0 Typ. Max. V V 0.1 µA 0.1 µA IEBO Emitter Cut-off Current VEB=5V, IC=0 hFE DC Current Gain VCE=6V, IC=1mA VBE (on) Base-Emitter On Voltage VCE=6V, IC=1mA 0.67 0.75 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=1mA 0.08 0.3 fT Current Gain Bandwidth Product VCE=6V, IC=1mA Cob Output Capacitance VCB=6V, IE=0, f=1MHz 40 150 Units V 240 300 2.0 V V MHz 2.5 pF hFE Classification Classification R O Y hFE 40 ~ 80 70 ~ 140 120 ~ 240 ©2002 Fairchild Semiconductor Corporation Rev. A2, September 2002 KSC1675 Typical Characteristics 10000 14 IB = 70µA 12 IB = 60µA 10 IB = 50µA 8 IB = 40µA 6 IB = 30µA 4 IB = 20µA VCE = 6V hFE, DC CURRENT GAIN IC[mA], COLLECTOR CURRENT 16 1000 100 IB = 10µA 2 10 0.1 0 0 4 8 12 16 20 24 1 Figure 2. DC current Gain 1000 10 IC=10IB VBE(sat) 1 VCE = 6V IC[mA], COLLECTOR CURRENT VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Figure 1. Static Charactersitic 0.1 VCE(sat) 100 10 1 0.1 0.01 0.1 1 0.2 10 IC[mA], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 1.2 VBE(V),BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage 10 Cib Cob 1 1 10 VCB[V], COLLECTOR-BASE VOLTAGE Figure 5. Input Output Capacitance ©2002 Fairchild Semiconductor Corporation 100 fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT 1000 f=1MHz IE=0 0.1 0.1 100 IC[mA], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Cob[pF], CAPACITANCE 10 VCE=6V 100 10 0.1 1 10 100 IC[mA], COLLECTOR CURRENT Figure 6. Current Gain Bandwidth Product Rev. A2, September 2002 KSC1675 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.29) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1