KSC2073 NPN Epitaxial Silicon Transistor Features • TV Vertical Deflection Output • Complement to KSA940 • Collector-Base Voltage : VCBO = 150V TO-220 1 1.Base Absolute Maximum Ratings Symbol 2.Collector 3.Emitter TA = 25°C unless otherwise noted Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V 1.5 A IC Collector Current PC Collector Dissipation (TC = 25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to 150 °C Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 500μA, IE = 0 150 V BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 150 V BVEBO Emitter-Base Breakdown Voltage IE = 500μA, IC = 0 5 Collector Cut-off Current VCB = 120V, IE = 0 ICBO hFE VCE(sat) fT Cob DC Current Gain VCE = 10V, IC = 0.5A Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA Current Gain Bandwidth Product VCE = 10V, IC = 0.5A Output Capacitance VCB =10V, IE = 0, f = 1MHz V 10 40 75 μA 140 1 V 4 MHz 50 pF hFE Classification Classification H1 H2 hFE 40 ~ 80 60 ~ 125 © 2011 Fairchild Semiconductor Corporation KSC2073 Rev. A1 www.fairchildsemi.com 1 KSC2073 — NPN Epitaxial Silicon Transistor September 2011 1.0 1000 VCE=10V IB=8mA 0.8 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0.9 IB=7mA 0.7 IB=6mA 0.6 0.5 IB=5mA IB=4mA 0.4 IB=3mA 0.3 IB=2mA 0.2 0.1 100 IB=1mA 0.0 0 5 10 15 20 25 30 35 40 45 10 0.01 50 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC=10IB f=1MHz IE=0 Cob[pF], CAPACITANCE VBE(sat),VCE(sat)[V], SATURATION VOLTAGE 1 1 VBE(sat) VCE(sat) 0.1 0.01 0.01 100 10 0.1 1 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter On Voltage 40 10 o DC 1 Thermal limitation 35 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 1.TC=25 C 2.*Single pulse *1mS S/B limitation S/B limitation 30 25 20 15 10 5 0 0.1 10 0 100 VCE[V], COLLECTOR EMITTER VOLTAGE 50 75 100 125 150 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area Figure 6. Power Derating © 2011 Fairchild Semiconductor Corporation KSC2073 Rev. A1 25 www.fairchildsemi.com 2 KSC2073 — NPN Epitaxial Silicon Transistor Typical Performance Characteristics KSC2073 — NPN Epitaxial Silicon Transistor Physical Dimension TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation KSC2073 Rev. A1 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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