KSC5026M NPN Silicon Transistor Features • High Voltage and High Reliability • High Speed Switching • Wide SOA TO-126 1 1. Emitter Absolute Maximum Ratings 2.Collector 3.Base TA = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage 1100 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V 1.5 A 5 A 0.8 A Symbol Parameter IC Collector Current (DC) ICP Collector Current (Pulse) IB Base Current PC Collector Dissipation (TC=25°C) 20 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 to 150 °C Package Marking and Ordering Information Part Number Marking Package Packing Method KSC5026MOS* C5026M-O TO-126 BULK Remarks * The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes hFE-class © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 www.fairchildsemi.com 1 KSC5026M — NPN Silicon Transistor January 2011 Symbol TA = 25°C unless otherwise noted Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC = 1mA, IE = 0 1100 V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 Emitter-Base Breakdown Voltage IE = 1mA, IC = 0 800 V 7 V Collector-Emitter Sustaining Voltage IC = 0.75A, IB1 = -IB2 = 0.15A, L = 5mH, Clamped 800 V ICBO Collector Cut-off Current VCB = 800V, IE = 0 IEBO Emitter Cut-off Current VEB = 5V, IC = 0 hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.1A VCE = 5V, IC = 0.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A VBE(sat) Base-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A Output Capacitance VCB = 10V, IE = 0, f = 1MHz 35 15 BVEBO VCEX(sus) Cob fT Current Gain Bandwidth Product VCE = 10V, IC = 0.1A tON Turn On Time tSTG Storage Time VCC = 400V IC = 5IB1 = -2.5IB2 = 1A RL = 400Ω tF Fall Time 10 8 10 μA 10 μA 40 2 1.5 V V pF MHz 0.5 μs 3 μs 0.3 μs hFE Classification Classification N R O hFE1 10 ~ 20 15 ~ 30 20 ~ 40 © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 www.fairchildsemi.com 2 KSC5026M — NPN Silicon Transistor Electrical Characteristics 2.0 1000 VCE = 5V 1.6 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 1.8 1.4 1.2 IB = 120mA 1.0 IB = 100mA IB = 80mA IB = 60mA IB = 40mA 0.8 0.6 IB = 20mA 0.4 IB = 10mA IB = 5mA IB = 0 0.2 0.0 0 1 2 3 4 5 6 7 8 9 100 10 1 0.01 10 0.1 10 Figure 1. Static Characteristic Figure 2. DC current Gain 1.6 10 VCE = 5V IC = 5 IB 1 0.1 IC[A], COLLECTOR CURRENT 1.4 VBE(sat) VCE(sat) 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.01 0.1 1 0.0 0.0 10 0.2 IC[A], COLLECTOR CURRENT 0.4 0.6 0.8 1.0 Figure 4. Base-Emitter On Voltage 10 10 IC[A], COLLECTOR CURRENT 0.1 0.01 0.1 1 DC ms 10 tON tF IC(max) 1 s 1m tSTG 1 s 0μ 10 IC(max).(Pulse) 0.1 0.01 1E-3 10 1 10 100 1000 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 1.2 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage tON, tSTG, tF [μs], TIME 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1 www.fairchildsemi.com 3 KSC5026M — NPN Silicon Transistor Typical Performance Characteristics (Continued) 100 30 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -0.15A 10 1 0.1 0.01 10 10 0 100 1000 10000 0 25 50 75 100 125 150 175 o VCE[V], COLLECTOR-EMITTER VOLTAGE TC[ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 20 www.fairchildsemi.com 4 KSC5026M — NPN Silicon Transistor Typical Performance Characteristics KSC5026M — NPN Silicon Transistor Physical Dimension 8.00 ±0.30 ±0.20 3.25 ±0.20 ø3.20 ±0.10 11.00 14.20MAX 3.90 ±0.10 TO-126 (1.00) (0.50) 0.75 ±0.10 1.75 ±0.20 13.06 0.75 ±0.10 16.10 ±0.30 ±0.20 1.60 ±0.10 #1 2.28TYP [2.28±0.20] +0.10 0.50 –0.05 2.28TYP [2.28±0.20] Dimensions in Millimeters © 2011 Fairchild Semiconductor Corporation KSC5026M Rev. B3 www.fairchildsemi.com 5 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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