KSC5345 KSC5345 High Voltage and High Reliability • High speed Switching • Wide Safe Operating Area TO-220 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 900 Units V VCEO VEBO Collector-Emitter Voltage 450 V Emitter-Base Voltage 14 V IC Collector Current (DC) 5 A ICP *Collector Current (Pulse) 10 A IB Base Current (DC) 2 A IBP *Base Current (Pulse) 4 A PC Power Dissipation(TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C * Pulse Test: Pulse Width = 5ms, Duty Cycle≤10% Thermal Characteristics TC=25°C unless otherwise noted Symbol Rθjc Thermal Resistance Rθja ©2001 Fairchild Semiconductor Corporation Characteristics Junction to Case Junction to Ambient Rating 1.25 Unit °C/W 62.5 Rev. A, October 2001 Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 500µA, IE = 0 Min. 900 Typ. - Max. - Units V V BVCEO Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0 450 - - BVEBO Emitter-Base Breakdown Voltage IC =500µA, IE = 0 14 - - V ICBO Collector Cut-off Current VCB = 800V, IE = 0 - - 10 µA IEBO Emitter Cut-off Current VEB = 14V, IC = 0 - - 10 µA hFE1 hFE2 DC Current Gain VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A 15 8 V VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1 VBE(sat) Base-Emitter Saturation Voltage IC = 3A, IB = 0.6A - - 1.5 Cob Output Capacitance VCB = 10V, f = 1MHz - 65 - 14 - MHz - 6.5 µs - 0.3 fT Current Gain bandwidth Product VCE= 10V, IC = 0.6A tSTG Storage Time tF Fall Time VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A - tSTG Storage Time - 3 Fall Time VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A - tF - - 0.3 ©2001 Fairchild Semiconductor Corporation V pF µs Rev. A, October 2001 KSC5345 Electrical Characteristics TC=25°C unless otherwise noted KSC5345 Typical Characteristics 100 mA 700 I B= 00mA IB = 6 0mA I B = 50 0mA I B = 40 0mA I B = 30 4 3 VCE = 5V hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 5 A I B = 200m A I B = 100m 2 1 0 0 2 4 6 8 10 1 0.01 10 1 10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characteristic Figure 2. DC current Gain 10 1000 IC = 5 IB 1 0.1 f = 1MHz IE = 0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 0.1 VBE(sat) VCE(sat) 0.01 0.01 100 10 1 0.1 1 10 1 10 100 1000 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 10 1 s DC 1 ms 10 tF 0.1 50µs Pulse 10 s 1m IC[A], COLLECTOR CURRENT tSTG 0µ 10 tON, tSTG, tF [µs], TIME VCC=250V, 5IB1= -5IB2=IC 0.1 0.01 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Switching Time ©2001 Fairchild Semiconductor Corporation 10 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A, October 2001 KSC5345 Typical Characteristics (Continued) 100 80 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT IB2 = -1A L = 200µH 10 1 0.1 60 40 20 0 0.01 10 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Bias Safe Operating Area ©2001 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. A, October 2001 KSC5345 Package Demensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A, October 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ STAR*POWER™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H4