KEC KTC3503

SEMICONDUCTOR
KTC3503
TECHNICAL DATA
TRIPLE DIFFUSED NPN TRANSISTOR
HIGH-DEFINITION CRT DISPLAY,
VIDEO OUTPUT APPLICATIONS.
A
B
D
C
E
FEATURES
High breakdown voltage : VCEO
F
300V.
Small reverse transfer capacitance and
G
excellent high frequency characteristic.
H
: Cre=1.8pF (VCB=30V, f=1MHz)
K
MAXIMUM RATING (Ta=25
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
300
V
Collector-Emitter Voltage
VCEO
300
V
Emitter-Base Voltage
VEBO
5
V
DC
IC
100
Pulse
ICP
200
Collector Current
Collector Power
Ta=25
Dissipation
Tc=25
Junction Temperature
Storage Temperature Range
L
M
)
CHARACTERISTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
J
Complementary KTA1381.
1.5
PC
7
Tj
150
Tstg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
N
O
1
2
3
P
1. EMITTER
2. COLLECTOR
3. BASE
mA
MILLIMETERS
8.3 MAX
5.8
0.7
_ 0.1
Φ3.2 +
3.5
_ 0.3
11.0 +
2.9 MAX
1.0 MAX
1.9 MAX
_ 0.15
0.75 +
_ 0.5
15.50 +
_ 0.1
2.3 +
_ 0.15
0.65 +
1.6
3.4 MAX
TO-126
W
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=200V, IE=0
-
-
0.1
A
Emitter Cut-off Current
IEBO
VEB=4V, IC=0
-
-
0.1
A
DC Current Gain
hFE (Note)
VCE=10V, IC=10mA
60
-
200
fT
VCE=30V, IC=10mA
-
150
-
MHz
Transition Frequency
Collector Output Capacitance
Cob
VCB=30V, IE=0, f=1MHz
-
2.6
-
pF
Reverse Transfer Capacitance
Cre
VCB=30V, IE=0, f=1MHz
-
1.8
-
pF
Collector-Emitter Saturation Voltage
VCE(sat)
IC=20mA, IB=2mA
-
-
0.6
V
Base-Emitter Saturation Voltage
VBE(sat)
IC=20mA, IB=2mA
-
-
1.0
V
Collector-Base Breakdown Voltage
V(BR)CBO
IC=10 A, IE=0
300
-
-
V
Collector-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, IB=0
300
-
-
V
Base-Emitter Breakdown Voltage
V(BR)EBO
IE=10 A, IC=0
5
-
-
V
Note : hFE Classification
2003. 7. 24
O:60 120,
Y:100
Revision No : 3
200
1/3
KTC3503
I C - V CE
20
10
I B =120µA
COLLECTOR CURRENT I C (mA)
COLLECTOR CURRENT I C (mA)
I C - V CE
I B =100µA
16
I B=80µA
12
I B =60µA
8
I B =40µA
4
0
I B =20µA
I B =0
0
2
4
6
8
10
IB=30µA
4
IB=20µA
IB=10µA
2
IB=0
0
0
2
4
6
h FE - I C
500
DC CURRENT GAIN h FE
VCE =10V
100
5 C
C
40
Ta=-2
C
60
Ta=25
80
20
0.2
0.4
0.6
0.8
Ta=25 C
Ta=-25 C
100
50
30
1
3
10
30
COLLECTOR CURRENT I C (mA)
fT - I C
C Ob - VCB
VCE =30V
300
100
50
30
1
Ta=75 C
BASE-EMITTER VOLTAGE VBE (V)
500
3
10
30
Revision No : 3
100
10
VCE =10V
300
10
0.5
1.0
OUTPUT CAPACITANCE Cob (pF)
0
10
0.5
8
I C - V BE
Ta=75
COLLECTOR CURRENT I C (mA)
TRANSITION FREQUENCY f T (MHz)
6
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
2003. 7. 24
IB=40µA
COLLECTOR-EMITTER VOLTAGE VCE (V)
120
0
IB=60µA
IB=50µA
8
50
100
f T =1MHz
30
10
5
3
1
0.5
1
3
10
30
100
COLLECTOR BASE VOLTAGE V CB (V)
2/3
KTC3503
C re - VCB
5
3
1
0.5
1
3
10
30
0.5
0.3
0.1
0.05
0.03
0.5
1
3
10
30
100
COLLECTOR CURRENT I C (mA)
VBE(sat) - I C
SAFE OPERATING AREA
5
200
S*
100
10
0µ
30
OP
Ta ER
=2 AT
5
C I ON
30
50
10
50
D
Tc C O
=2 PE
5 RA
C T
S*
3
DC
S*
0.3
I C MAX.(CONTINUOUS)
0m
0.5
100
1m
1
I C MAX.(PULSED)*
10
3
1
200
300
IC /I B =10
0.5
I C /I B =10
COLLECTOR BASE VOLTAGE V CB (V)
10
BASE-EMITTER SATURATION
VOLTAGE V BE(sat) (V)
100
VOLTAGE VCE(sat) (V)
10
1
COLLECTOR CURRENT I C (mA)
REVERSE TRANSFER CAPACITANCE C re (pF)
f T =1MHz
30
COLLECTOR-EMITTER SATURATION
VCE(sat) - I C
50
IO
N
* SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
5
3
COLLECTOR CURRENT I C (mA)
3
10
30
100
300
COLLECTOR POWER DISSIPATION PC (W)
COLLECTOR EMITTER VOLTAGE VCE (V)
Pc - Ta
8
(1) Tc=Ta
(1)
6
INFINITE HEAT SINK
(2) NO HEAT SINK
4
2
0
(2)
0
50
100
150
200
AMBIENT TEMPERATURE Ta ( C)
2003. 7. 24
Revision No : 3
3/3