L6122 L6123 100 V DMOS SWITCHES .. .. .. ADVANCE DAT A OUTPUT VOLTAGE TO 100V 0,5Ω RDS (on) SUPPLY VOLTAGE UP TO 60V LOW INPUT CURRENT TTL/CMOS COMPATIBLE INPUTS HIGH SWITCHING FREQUENCY (200kHz) MULTIPOWER BCD TECHNOLOGY DESCRIPTION Realized with the Multipower-BCD mixed bipolar/CMOS/DMOS process, the L6122/23 monolithic three DMOS switch is designed for high current, high voltage switching applications. Each of the three switches is controlled by a logic input and all three are controlled by a common enable input. All inputs are TTL/CMOS compatible for direct connection to logic circuits. Each source is available for the insertion of the sense resistors in current control applications. Two versions are available : the L6122 mounted in a Powerdip 14 + 3 + 3 package and the L6123 in a 15-lead Multiwatt package. Pow erd ip 14+3+3 (Plastic Package) ORDERING NUMBER : L6122 MULTIWATT15V (Plastic Package) ORDERING NUMBER : L6123 PIN CONNECTIONS (top view) L6122 (PO WERDIP) L6123 (MULTIWATT15V) April 1993 This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/9 L6122 - L6123 BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Value Unit VDS Drain-source Voltage 100 V VCC Supply Voltage 60 V Continuous Drain Current @ Tpins = 90 °C, POWERDIP @ Tcase = 90 °C, MULTIWATT 1.5 3 A A 5 8 A A 1.5 3 A A 5 8 A A ID IDM (*) Parameter Pulsed Drain Current POWERDIP MULTIWATT ISD Continuous Source-drain Diode Current @ Tpins = 90 °C, POWERDIP @ Tcase = 90 °C, MULTIWATT ISDM Pulsed Source Drain Diode Current POWERDIP MULTIWATT VIN Input Voltage 7 V VEN Enable Voltage 7 V VS Source Voltage Ptot Total Power Dissipation Tstg, Tj @ @ @ @ – 1 to + 4 V 4.3 20 1.3 2.3 W W W W – 40 to + 150 °C Tpins = 90 °C, POWERDIP Tcase = 90 °C, MULTIWATT Tamb = 70 °C, POWERDIP Tamb = 70 °C, MULTIWATT Storage and Junction Temperature Range (*) Pulse width ≤ 300 µs, duty cycle ≤ 10 %. NOTE : ID, IDM, ISD, ISDM are given per channel. THERMAL DATA Symbol Parameter POWERDIP14+3+3 MULTIW ATT15 Unit R th j-pins Thermal Resistance Junction-pins Max. 14 - o R th j-case Thermal Resistance Junction-case Max. - 3 o C/W Rth j-amb Thermal Resistance Junction-ambient Max. 65 35 o C/W 2/9 C/W L6122 - L6123 ELECTRICAL CHARACTERISTICS (Tj = 25oC, VCC = 40V, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. VCC Supply Voltage ICC Supply Current All VIN = H VEN = Square Wave (200kHz, 50% DC) 9 IQ Quiescent Current VEN = L 2 Drain Source Breakdown Voltage ID = 1mA VEN = L Output Leakage Current VEN = L VDS = 100V VDS = 80V, Tj = 125°C BVDSS IDSS 14 48 Unit V mA 3 100 mA V mA 1 1 VCC ≥ 14V, ID = 1.5A - VEN, VIN = H Ω R DS(on) (*) Static Drain-source on Resistance VINL, VENL Input Low Voltage VINH, VENH Input High Voltage 7 V IINL, IENL Input Low Current VIN, VEN = L - 100 µA IINH, IENH Input High Current VIN, VEN = H 10 µA td (on) tr td (off ) tf VSD (*) VSD(on) (*) - 0.3 Turn off Delay Time 0.8 2 Turn on Delay Time Rise Time 0.7 ID = 1.5A See Test Circuit and Waveforms Fall Time V 300 ns 100 ns 400 ns 100 ns Source Drain Diode Forward Voltage ISD = 1.5A, VEN = L 1.5 V Source Drain Forward Voltage ISD = 1.5A - VIN , VEN = H 1.2 V (*) Pulse test : pulse width = 300 µs, duty cycle = 2 %. SWITCHING TIMES RESISTIVE LOAD Figure 1 : Test Circuit. 3/9 L6122 - L6123 Figure 2 : Waveforms. a) b) Figure 3 : Static Drain-source on Resistance. Figure 4 : Normalized Breakdown Voltage vs. Temperature. Figure 5 : Normalized on Resistance vs. Temperature. Figure 6 : Typical Source-drain Diode Forward Voltage. 4/9 L6122 - L6123 Figure 7 : Rth j-amb vs. Dissipated Power (Multiwatt). (*) Rth ≈ 9°C/W Figure 8 : Transient Thermal Resistance for Single Pulses (Multiwatt). 5/9 L6122 - L6123 Figure 9 : Peak Transient Thermal Resistance vs. Pulse Width and Duty Cycle (Multiwatt). 6/9 L6122 - L6123 MULTIWATT15 PACKAGE MECHANICAL DATA DIM. mm MIN. TYP. inch MAX. MIN. TYP. MAX. A 5 0.197 B 2.65 0.104 C 1.6 D 0.063 1 0.039 E 0.49 0.55 0.019 0.022 F 0.66 0.75 0.026 0.030 G 1.14 1.27 1.4 0.045 0.050 0.055 G1 17.57 17.78 17.91 0.692 0.700 0.705 H1 19.6 0.772 H2 20.2 0.795 L 22.1 22.6 0.870 L1 22 22.5 0.866 0.890 0.886 L2 17.65 18.1 0.695 0.713 L3 17.25 17.5 17.75 0.679 0.689 L4 10.3 10.7 10.9 0.406 0.421 L7 2.65 2.9 0.104 M 4.2 4.3 4.6 0.165 0.169 M1 4.5 5.08 5.3 0.177 0.200 S 1.9 2.6 0.075 0.699 0.429 0.114 0.181 0.209 0.102 S1 1.9 2.6 0.075 0.102 Dia1 3.65 3.85 0.144 0.152 7/9 L6122 - L6123 POWERDIP20 PACKAGE MECHANICAL DATA mm DIM. MIN. a1 0.51 B 0.85 b b1 TYP. MAX. MIN. TYP. MAX. 0.020 1.40 0.033 0.50 0.38 0.055 0.020 0.50 D 0.015 0.020 24.80 0.976 E 8.80 0.346 e 2.54 0.100 e3 22.86 0.900 F 7.10 0.280 I 5.10 0.201 L Z 8/9 inch 3.30 0.130 1.27 0.050 L6122 - L6123 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved MULTIWATT is a Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9