MICROCIRCUIT DATA SHEET Original Creation Date: 12/21/98 Last Update Date: 04/16/99 Last Major Revision Date: 04/06/99 MRLM108A-X-RH REV 1A0 OPERATIONAL AMPLIFIERS (SINGLE) GUARANTEED TO 100K RAD(Si) TESTED TO MIL-STD-883, METHOD 1019.5 General Description The LM108A is a precision operational amplifier having specifications a factor of ten better than FET amplifiers over a -55 C to +125 C temperature range. The device operates with supply voltages from +2V to +20V and has sufficient supply rejection to use unregulated supplies. Although the circuit is interchangeable with and uses the same compensation as the LM101A, an alternate compensation scheme can be used to make it particularly insensitive to power supply noise and to make supply bypass capacitors unnecessary. The low current error of the LM108A makes possible many designs that are not practical with conventional amplifiers. In fact, it operates from 10M Ohms source resistances, introducing less error than devices like the 709 with 10K Ohms sources. Integrators with drifts less than 500 uV/sec and analog time delays in excess of one hour can be made using capacitors no larger than 1uF. Industry Part Number NS Part Numbers LM108A LM108AHRQML LM108AHRQMLV LM108AJ-8RQML LM108AJ-8RQMLV LM108AJRQML LM108AJRQMLV LM108AWGRQML LM108AWGRQMLV LM108AWRQML LM108AWRQMLV Prime Die LM108A Controlling Document SEE FEATURES SECTION Processing Subgrp Description MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Features CONTROLLING DOCUMENT: LM108AHRQML LM108AHRQMLV LM108AJ-8RQML LM108AJ-8RQMLV LM108AJRQML LM108AJRQMLV LM108AWGRQML LM108AWGRQMLV LM108AWRQML LM108AWRQMLV 5962R9863702QGA 5962R9863702VGA 5962R9863702QPA 5962R9863702VPA 5962R9863702QCA 5962R9863702VCA 5962R9863702QZA 5962R9863702VZA 5962R9863702QHA 5962R9863702VHA 2 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 (Absolute Maximum Ratings) (Note 1) Supply Voltage +22V Power Dissipation (Note 2) METAL CAN CERDIP, 14 CERDIP, 8 CERPACK, 10 CERAMIC SOIC Differential Input (Note 3) 330mW 400mW 400mW 330mW 330mW Lead Lead Lead @ @ @ @ @ +125 +125 +125 +125 +125 C C C C C Current +10mA Differential Input Voltage (Note 5) +30V Input Voltage (Note 4) +20V Output Short-Circuit Duration Continuous Operating Temperature Range -55 C to +125 C Storage Temperature Range -65 C to +150 C Thermal Resistance ThetaJA METAL CAN CERDIP, 14 Lead CERDIP, 8 Lead CERPACK, 10 Lead CERAMIC SOIC (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air (Still Air) (500LF/Min Air flow) flow) flow) flow) flow) ThetaJC METAL CAN CERDIP, 14 Lead CERDIP, 8 Lead CERPACK, 10 Lead CERAMIC SOIC Package Weight (Typical) METAL CAN CERDIP, 14 Lead CERDIP, 8 Lead CERPACK, 10 Lead CERAMIC SOIC Maximum Junction Temperature 150 86 94 55 120 68 225 142 225 142 C/W C/W C/W C/W C/W C/W C/W C/W C/W C/W 38 13 17 21 21 C/W C/W C/W C/W C/W 990mg 2180mg 1090mg 225mg 210mg 175 C Soldering Information (Soldering, 10 seconds) ESD Tolerance (Note 6) 300 C 2000V 3 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Note 1: Note 2: Note 3: Note 4: Note 5: Note 6: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax = (Tjmax - TA) /ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. The inputs are shunted with back-to-back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the inputs unless some limiting resistance is used. For supply voltages less than +20V, the absolute maximum input voltage is equal to the supply voltage. This rating is +1.0V unless resistances of 2K Ohms or greater are inserted in series with the inputs to limit current in the input shunt diodes to the maximum allowable value. Human body model, 1.5K Ohms in series with 100pF. 4 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Electrical Characteristics DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms SYMBOL Vio PARAMETER Input Offset Voltage CONDITIONS NOTES +Vcc = 35V, -Vcc = -5V, Vcm = -15V +Vcc = 5V, -Vcc = -35V, Vcm = 15V +Vcc = +5V, -Vcc = -5V PINNAME MIN MAX UNIT SUBGROUPS -0.5 0.5 mV 1 -1 1 mV 2, 3 -0.5 0.5 mV 1 -1 1 mV 2, 3 -0.5 0.5 mV 1 -1 1 mV 2, 3 -0.5 0.5 mV 1 -1 1 mV 2, 3 Delta Vio/Delta T Temperature Coeffient of Input Offset Voltage 25 C < TA < +125 C 1 -5 5 uV/C 2 25 C < TA < -55 C 1 -5 5 uV/C 3 Iio Input Offset Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 -0.2 0.2 nA 1 -0.4 0.4 nA 2, 3 +Vcc = 5V, -Vcc = -35V, Vcm = 15V +Vcc = +5V, -Vcc = -5V Delta Iio/Delta T Temperature Coeffient of Input Offset Current 25 C < TA < +125 C 1 -2.5 2.5 pA/C 2 25 C < TA < -55 C 1 -2.5 2.5 pA/C 3 5 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms SYMBOL +Iib PARAMETER Input Bias Current CONDITIONS NOTES +Vcc = 35V, -Vcc = -5V, Vcm = -15V +Vcc = 5V, -Vcc = -35V, Vcm = 15V +Vcc = +5V, -Vcc = -5V -Iib Input Bias Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V +Vcc = 5V, -Vcc = -35V, Vcm = 15V +Vcc = +5V, -Vcc = -5V PINNAME MIN MAX UNIT SUBGROUPS -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 -0.1 2 nA 1 -1 2 nA 2 -0.1 3 nA 3 +PSRR Power Supply Rejection Ratio +Vcc = 10V, -Vcc = -20V -16 16 uV/V 1, 2, 3 -PSRR Power Supply Rejection Ratio +Vcc = 20V, -Vcc = -10V -16 16 uV/V 1, 2, 3 CMRR Common Mode Rejection Ratio Vcm = +15V 96 dB 1, 2, 3 Ios+ Short Circuit Current +Vcc = +15V, -Vcc = -15V, t < 25mS -15 mA 1, 2, 3 6 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Ios- Short Circuit Current +Vcc = +15V, -Vcc = -15V, t < 25mS 15 mA 1, 2, 3 Icc Power Supply Current +Vcc = +15V, -Vcc = -15V 0.6 mA 1, 2 0.8 mA 3 V 4, 5, 6 V 4, 5, 6 AC/DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms AC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms +Vop Output Voltage Swing Rl = 10K Ohms -Vop Output Voltage Swing Rl = 10K Ohms Avs+ Open Loop Voltage Gain Rl = 10K Ohms, Vout = +15V Avs- Open Loop Voltage Gain 16 -16 Rl = 10K Ohms, Vout = -15V 3 80 V/mV 4 3 40 V/mV 5, 6 3 80 V/mV 4 3 40 V/mV 5, 6 20 V/mV 4, 5, 6 Avs Open Loop Voltage Gain +Vcc = +5V, Rl = 10K Ohms, Vout = +2V 3 TR(tr) Transient Response Rise Time Rl = 10K Ohms, Cl = 100pF, f < 1KHz, Vin = +50mV 4 1000 nS 9, 10, 11 TR(os) Transient Response Overshoot Rl = 10K Ohms, Cl = 100pF, f < 1KHz, Vin = +50mV 4 50 % 9, 10, 11 Sr(+) Slew Rate Av = 1, Vin = -5V to +5V 0.05 V/uS 9, 10, 11 Sr(-) Slew Rate Av = 1, Vin = +5V to -5V 0.05 V/uS 9, 10, 11 NI(BB) Noise Broadband BW = 10Hz to 5KHz, Rs = 0 Ohms 2 15 uVrms 9 NI(PC) Noise Popcorn BW = 10Hz to 5KHz, Rs = 100K Ohms 2 40 uVpk 9 7 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Electrical Characteristics DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms. "Delta calculations performed on JAN S and QMLV devices at group B, subgroup 5 only". SYMBOL PARAMETER CONDITIONS NOTES PINNAME MIN MAX UNIT SUBGROUPS Vio Input Offset Voltage -0.25 0.25 mV 1 +Iib Input Bias Current -0.5 0.5 nA 1 -Iib Input Bias Current -0.5 0.5 nA 1 DC/AC PARAMETERS: POST RADIATION LIMITS +25 C (SEE NOTE 5) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: +Vcc = +20V, Vcm = 0V, Rs = 50 Ohms. +Iib -Iib Iio Input Bias Current Input Bias Current Input Offset Current +Vcc = 35V, -Vcc = -5V, Vcm = -15V 5 5.0 nA 1 +Vcc = 5V, -Vcc = -35V, Vcm = -15V 5 5.0 nA 1 5 5.0 nA 1 +Vcc = +5V, -Vcc = -5V 5 5.0 nA 1 +Vcc = 35V, -Vcc = -5V, Vcm = -15V 5 5.0 nA 1 +Vcc = 5V, -Vcc = -35V, Vcm = -15V 5 5.0 nA 1 5 5.0 nA 1 +Vcc = +5V, -Vcc = -5V 5 5.0 nA 1 +Vcc = 35V, -Vcc = -5V, Vcm = -15V 5 0.5 nA 1 +Vcc = 5V, -Vcc = -35V, Vcm = -15V 5 0.5 nA 1 5 0.5 nA 1 5 0.5 nA 1 +Vcc = +5V, -Vcc = -5V Note Note Note Note Note 1: 2: 3: 4: 5: Calculated parameter. Test on either A360, J273 AC or bench test. Datalog reading in K = V/mV. Bench test. Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, Method 1019.5. 8 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Graphics and Diagrams GRAPHICS# DESCRIPTION H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG) J08ARL CERDIP (J), 8 LEAD (P/P DWG) J14ARH CERDIP (J), 14 LEAD (P/P DWG) P000253A CERAMIC SOIC (WG), 10 LEAD (PINOUT) P000310A METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (PINOUT) P000311A CERDIP (J), 14 LEAD (PINOUT) P000312A CERDIP (J), 8 LEAD (PINOUT) P000431A CERPACK (W), 10 LEAD (PINOUT) W10ARG CERPACK (W), 10 LEAD (P/P DWG) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page. 9 N/C 1 10 COMP 1 N/C 2 9 COMP 2 IN- 3 8 V+ IN+ 4 7 OUTPUT N/C 5 6 V- LM108AWG 10 - LEAD CERAMIC SOIC CONNECTION DIAGRAM TOP VIEW P000253A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 N N N N/C 1 10 COMP 1 N/C 2 9 COMP 2 IN- 3 8 V+ IN+ 4 7 OUTPUT N/C 5 6 V- LM108AW 10 - LEAD CERPACK CONNECTION DIAGRAM TOP VIEW P000431A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 MICROCIRCUIT DATA SHEET MRLM108A-X-RH REV 1A0 Revision History Rev ECN # Originator Changes 0A0 M0003181 04/16/99 Rel Date Rose Malone Initial MDS Release: MRLM108A-X-RH, Rev. 0A0 - Rad Hard Data Sheet. 1A0 M0003364 04/16/99 Rose Malone Update MDS: MRLM108A-X-RH, Rev. 0A0 to MRLM108A-X-RH, Rev. 1A0. Update Thermal Resistance - Cerpack (Still Air) from 150 C/W to 225 C/W, Electricals: DC and Drift Values and Post Radiation Section - Removed reference to Rs=5 Mohms from Iio, +Iib, -Iib. Correction made to correlate with test program. 10