LESHAN RADIO COMPANY, LTD. Schottky barrier diode P b - free pack age is available LRB520G-30T1 G zApplications Low current rectification 1 zFeatures 1) Ultra Small mold type. 2) Low IR. 3) High reliability. 2 SOD-723 zConstruction Silicon epitaxial planar epit zD evice M ark ing Device Marking Shipping E LRB520G-30T1G 4000/Tape&Reel zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage(DC) Average rectified forward current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Limits 30 100 500 125 -40 to +125 Symbol VR Io IFSM Tj Tstg Unit V mA mA ℃ ℃ zElectrical characteristics (Ta=25°C) Param eter Sym bol Min. Typ. Max. Unit Forward voltage VF - - 0.45 V Conditions IF =10m A Revers e current IR - - 0.5 µA VR =10V Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LRB520G-30T1 G Electrical characteristic curves (Ta=25°C) 1000000 1 Ta=-25℃ Ta=25℃ 0.1 0.01 100000 Ta=75℃ 10000 1000 Ta=25℃ 100 Ta=-25℃ 10 1 0.001 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 30 0 340 330 800 19 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 350 700 600 500 400 300 AVE:100.5nA 200 17 16 15 14 13 12 11 0 10 VF DISPERSION MAP AVE:15.94pF Ct DISPERSION MAP IR DISPERSION MAP 10 10 PEAK SURGE FORWARD CURRENT:IFSM(A) 20 1cyc Ifsm 15 8.3ms 10 AVE:3.90A 5 0 Ifsm 8.3ms 8.3ms 1cyc 5 Ifsm t 5 0 0 1 10 1 100 IFSM DISRESION MAP 10 100 TIME:t(ms) IFSM-t CHARACTERISTICS NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0.1 1000 20 Ta=25℃ f=1MHz VR=0V n=10pcs 18 100 320 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 20 Ta=25℃ VR=10V n=30pcs 900 REVERSE CURRENT:IR(nA) 0.02 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IF=100mA IM=10mA 1m FORWARD POWER DISSIPATION:Pf(W) 0.08 DC REVERSE POWER DISSIPATION:PR (W) FORWARD VOLTAGE:VF(mV) 20 1000 Ta=25℃ IF=10mA n=30pcs AVE:338.8mV PEAK SURGE FORWARD CURRENT:IFSM(A) 10 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 370 360 10 1 0 600 PEAK SURGE FORWARD CURRENT:IFSM(A) 0 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ 10 100 Ta=125℃ f=1MHｚ Ta=125℃ 100 REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 1000 D=1/2 0.06 Sin(θ＝180) 0.04 0.02 time 0.015 0.01 DC 0.005 D=1/2 Sin(θ＝180) 300u 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0 0.05 0.1 0.15 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 0.2 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Rev.O 2/4 LESHAN RADIO COMPANY, LTD. LRB520G-30T1 G 0.3 0A 0V 0.2 DC Io t T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.3 0A 0V 0.2 Io t DC T VR D=t/T VR=15V Tj=125℃ D=1/2 0.1 Sin(θ＝180) 0 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.O 3/4 LESHAN RADIO COMPANY, LTD. LRB520G-30T1 G SOD−723 D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E b 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L MILLIMETERS INCHES MIN NOM MAX MIN NOM MAX 0.49 0.52 0.55 0.019 0.020 0.022 0.25 0.28 0.32 0.0098 0.011 0.013 0.08 0.12 0.15 0.0032 0.0047 0.0059 0.95 1.00 1.05 0.037 0.039 0.041 0.55 0.60 0.65 0.022 0.024 0.026 1.35 1.40 1.45 0.053 0.055 0.057 0.15 0.20 0.25 0.006 0.0079 0.010 HE SOLDERING FOOTPRINT* 1.1 0.043 0.45 0.0177 0.50 0.0197 SCALE 10:1 mm Ǔ ǒinches Rev.O 4/4