LS320 HIGH INPUT IMPEDANCE BiFET AMPLIFIER Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE rGs = 100GΩ HIGH TRANSCONDUCTANCE YFS = 30,000µS ABSOLUTE MAXIMUM RATINGS1 TO-72 BOTTOM VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures Storage Temperature -65 to +150 °C Operating Junction Temperature -55 to +125 °C S 2 3 D S 1 4 G Maximum Power Dissipation 200mW Continuous Power Dissipation @ +125 °C Maximum Currents Drain Current ID = 25mA Maximum Voltages Drain to Source1 VDSO = 20V Gate to Source VGSS = 20V ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN VDS Drain to Source Voltage -20 VGS Gate to Source Voltage -12 gfs Common Source Forward Transconductance goss Common Source Output Conductance rGs Gate to Source Input Resistance TYP -10 MAX UNITS -7 30,000 300 100 CONDITIONS V IDS = 100µA, VGS = 0V V IDS = 10mA, Vgs = -10V2,3 µS IDS = 10mA, VDS = -10V, f = 1kHz µS IDS = 10mA, VDS = -10V, f = 1kHz GΩ VGS = 0 to 20V, TJ to 125 °C CISS Input Capacitance 8 pF IDS = 10mA, VDS = -10V CRSS Reverse Transfer Capacitance 1.5 pF IDS = 10mA, VDS = -10V Noise Voltage 25 µV IDS = 10mA, VDS = 10V BW = 50 to 15kHz en PACKAGE OPTIONS SOT-23 TOP VIEW D 1 G 2 3 FUNCTIONAL SCHEMATIC TO-92 BOTTOM VIEW S D S G 1 2 3 D G S 1. Absolute maximum ratings are limiting values above which serviceability may be impaired. 2. The gate to source voltage must never exceed 100V, t < 10ms. 3. Additional screening available Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261