Switching Diodes MA2C185 Silicon epitaxial planar type Unit : mm For high-voltage switching circuits, small power rectification 2.2 ± 0.3 1st Band 2nd Band Reverse voltage (DC) Repetitive peak reverse voltage Output current Symbol Rating Unit VR 200 V VRRM 250 V IO 200 mA Repetitive peak reverse current IFRM 625 mA Non-repetitive peak forward surge current surge current* IFSM 1 A Average power dissipation PF(AV) 400 mW Junction temperature Tj 175 °C Storage temperature Tstg −65 to +175 °C 0.2 max. ■ Absolute Maximum Ratings Ta = 25°C Parameter 13 min. 1 13 min. • High reverse voltage (VR = 200 V) • Large output current IO • Small glass type (DO-34) package, allowing to insert into a 5 mm pitch hole COLORED BAND INDICATES CATHODE 0.2 max. ■ Features φ 0.45 max. 2 φ 1.75 max. 1: Cathode 2: Anode JEDEC: DO-34 Note) * : t = l s ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 200 V 200 nA Forward voltage (DC) VF IF = 200 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 250 V 4.5 pF Note) Rated input/output frequency: 3 MHz ■ Cathode Indication Type No. Color MA2C185 1st Band White 2nd Band Green 1 MA2C185 Switching Diodes I F VF IR Ta VF Ta 103 10 1.6 1.4 10 Ta = 150°C 1 100°C 25°C − 20°C 10−1 Reverse current IR (µA) 1 Forward voltage VF (V) Forward current IF (mA) 102 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 1 mA 0.4 10−1 VR = 200 V 10−2 10−3 0.2 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) IR VR Ta = 150°C Reverse current IR (µA) 100°C 10−2 10−3 10−4 10−5 25°C 0 40 80 120 160 Reverse voltage VR (V) 2 10−4 0 40 80 120 160 Ambient temperature Ta (°C) 1 10−1 0 200 200 0 20 40 60 80 100 120 140 160 180 Ambient temperature Ta (°C)