Schottky Barrier Diodes (SBD) MA2SD29 Silicon epitaxial planar type Unit: mm 0.60+0.05 –0.03 For super high speed switching 0.12+0.05 –0.02 0.80+0.05 –0.03 2 0.30±0.05 ■ Absolute Maximum Ratings Ta = 25°C 5˚ Symbol Rating Unit VR 30 V Repetitive peak reverse voltage VRRM 30 V Forward current (Average) IF(AV) 100 mA Peak forward current IFM 200 mA Non-repetitive peak forward IFSM 1 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C surge current (0.15) Reverse voltage 0+0 –0.05 0.01±0.01 Parameter 1.60±0.05 1.20+0.05 –0.03 0.01±0.01 5˚ (0.60) (0.80) • Low forward voltage: VF < 0.42 V (at IF = 100 mA) • Optimum for high frequency rectification because of its short reverse recovery time trr . (0.60) 0.80±0.05 1 ■ Features 1: Anode 2: Cathode SSMini2-F1 Package * Marking Symbol: 8M Note) * : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 25 µA Reverse current IR1 VR = 10 V IR2 VR = 30 V Forward voltage VF1 IF = 10 mA 0.25 0.29 VF2 IF = 100 mA 0.39 0.42 Ct VR = 0 V, f = 1 MHz 11 pF trr IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 1 ns Terminal capacitance Reverse recovery time * 120 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 3. Absolute frequency of input and output is 250 MHz 4. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% Pulse Generator (PG-10N) Rs = 50 Ω Publication date: October 2003 A Wave Form Analyzer (SAS-8130) V R Ri = 50 Ω SKH00135AED 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω 1 MA2SD29 IF V F I R VR Ct VR 103 103 25 Ta = 25°C Ta = 125°C 10 Reverse current IR (µA) Forward current IF (mA) 75°C 25°C −25°C 1 10−1 Terminal capacitance Ct (pF) Ta = 125°C 102 102 75°C 10 25°C 1 10−2 10−3 15 10 5 1 0 0.1 0.2 0.3 0.4 0.5 Forward voltage VF (V) 2 20 0.6 0 5 10 15 20 25 Reverse voltage VR (V) SKH00135AED 30 0 5 10 15 20 25 Reverse voltage VR (V) 30 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2003 SEP