RO-P-DS-3090 — Preliminary Information MAAPGM0060 4.8-6.7 GHz 5W Power Amplifier MAAPGM0060 Features ♦ 5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (6-10V) Operation ♦ GaAS MSAG™ MESFET Process APGM0060 YWWLLLL Primary Applications ♦ ♦ ♦ Point-to-Point Radio SatCom UNII and ISM Band Description The MAAPGM0060 is a 2-stage 5 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Pin Number RF Designator 1 No Connection 2 VGG 3 RF IN 4 VGG 5 No Connection 6 VDD1 7 VDD2 8 RF OUT 9 VDD2 10 VDD1 Each device is 100% RF tested to ensure performance compliance. The part is fabricated using M/A-COM’s GaAs Multifunction Self-Aligned Gate MESFET Process. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Maximum Operating Conditions 1 Parameter Symbol Absolute Maximum Units Input Power PIN 25.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF) IDQ 3 A Quiescent DC Power Dissipated (No RF) PDISS 27 W Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C 1. Operation outside of these ranges may reduce product reliability. RO-P-DS-3090 — 4.8-6.7 GHz 5W Power Amplifier 2/5 MAAPGM0060 Recommended Operating Conditions Characteristic Symbol Min Typ Max Unit 8.0 10.0 V Drain Supply Voltage VDD 6.0 Gate Supply Voltage VGG -2.4 Input Power PIN Junction Temperature TJ Thermal Resistance ΘJC Package Base Temperature TB -1.8 -1.5 V 20.0 23.0 dBm 150 °C 3.7 °C/W Note 2 °C 2. Maximum Package Base Temperature = 150°C — ΘJC* VDD * IDQ Electrical Characteristics: TB = 40°C2, Z0 = 50 Ω, VDD = 8V, IDQ ≈ 1.85 A3, Pin = 20 dBm, RG = 100Ω Parameter Symbol Typical Units Bandwidth f 4.8-6.7 GHz Output Power POUT 37 dBm Power Added Efficiency PAE 29 % 1-dB Compression Point P1dB 37 dBm Small Signal Gain G 18 dB Input VSWR VSWR 3:1 Output VSWR VSWR 1.5:1 Gate Supply Current IGG <4 mA Drain Supply Current IDD <2.5 A 3. Adjust VGG between –2.4 to -1.5 to achieve indicated IDQ. Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. 2. 3. 4. Apply VGG = -1.8 V, VDD= 0 V. Ramp VDD to desired voltage, typically 8 V. Adjust VGG to set IDQ, (approxmately @ –1.8V). Set RF input. 5. Power down sequence in reverse. Turn gate voltage off last. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3090 — 4.8-6.7 GHz 5W Power Amplifier 3/5 MAAPGM0060 40 50 50 40 40 38 36 POUT 30 32 30 20 28 P1dB (dBm) PAE PAE(%) POUT (dBm) 34 30 VDD = 6 20 VDD = 8 26 24 10 10 0 0 VDD = 10 22 20 4.5 5.0 5.5 6.0 6.5 4.5 7.0 5.0 5.5 6.0 6.5 Frequency (GHz) Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 20 dBm Figure 2. 1dB Compression Point vs. Drain Voltage 7.0 3.0 50 2.5 40 IDS (A) POUT (dBm) 2.0 30 20 1.5 5.0 GHz 5.5 GHz 5.0 GHz 1.0 5.5 GHz 6.5 GHz 10 6.5 GHz 0.5 0.0 0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 22 -10 24 -8 -6 -4 -2 0 2 4 6 8 10 14 16 18 20 22 24 Figure 4. Drain Current vs. Input Power at VDD = 8V Figure 3. Output Power vs. Input Power at VDD = 8V 50 30 40 25 30 30 20 4 20 20 15 3 10 10 10 2 50 6 Gain Input VSWR 0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 Drain Voltage (volts) 0 10.0 Output VSWR 5 VSWR Gain (dB) PAE 40 PAE(%) POUT POUT (dBm) 12 Input Power (dBm) PIN (dBm) 5 1 4.5 5.0 5.5 6.0 6.5 7.0 Frequency (GHz) Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 6 GHz Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3090 — 4.8-6.7 GHz 5W Power Amplifier 4/5 MAAPGM0060 APGM0060 YWWLLLL Figure 7. CR-15 Package Dimensions The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3090 — 4.8-6.7 GHz 5W Power Amplifier 5/5 MAAPGM0060 Figure 8. Recommended Bias Configuration 100Ω VGG 0.1 µF 100 pF 100 pF 100 pF 100 pF APGM0060 YWWLLLL RFIN RFOUT V DD2 0.1 µF 100 pF 100 pF Pin Number RF Designator 1 No Connection 2 VGG 3 RF IN 4 VGG 5 No Connection 6 VDD1 7 VDD2 8 RF OUT 9 VDD2 10 VDD1 V DD1 0.1 µF Assembly Instructions: This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. * Application Notes can be found by going to the Site Search Page on M/A-COM’s web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note. Biasing Notes: ♦ The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible ♦ (recommended < 100 mils). A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier. Specifications subject to change without notice. Email: [email protected] North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1908) 574 200, Fax+44 (1908) 574 300 V 1.00 Visit www.macom.com for additional data sheets and product information.