RF Power Field Effect Transistor LDMOS, 2110 — 2170 MHz, 15W, 28V 8/20/03 MAPLST2122-015CF Preliminary Features Package Style Designed for W-CDMA base station applications in the 2.1 to 2.2 GHz Frequency Band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. Q Q Q Q 15W Output Power at P1dB (CW) 12dB Minimum Gain at P1dB (CW) W-CDMA Typical Performance: (28VDC, -45dBc ACPR, 5MHz offset, 4.096MHz BW) Q Output Power: 2.2W (typ.) Q Gain: 13dB (typ.) Q Efficiency: 17% (typ.) 10:1 VSWR Ruggedness (CW @ 15W, 28V, 2110MHz) MAPLST2122-015CF Maximum Ratings Parameter Symbol Rating Units Drain—Source Voltage VDSS 65 Vdc Gate—Source Voltage VGS 20 Vdc Total Power Dissipation @ TC = 25 °C PD 54.7 W Storage Temperature TSTG -40 to +150 °C Junction Temperature TJ +200 °C Symbol Max Unit RΘJC 3.2 ºC/W Thermal Characteristics Characteristic Thermal Resistance, Junction to Case NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary Characteristic Symbol Min Symbol V(BR)DSS Min 65 Typ — Max — Unit Vdc Zero Gate Voltage Drain Leakage Current 28 Vdc, VGS (VDS DS = 65 GS = 0) IDSS IDSS —— —— 101 µAdc µAdc Gate—Source Leakage Zero Gate Voltage DrainCurrent Leakage Current (VGS == 26 5 Vdc, VVDS ==0)0) (V Vdc, DS GS IGSS IDSS —— —— 11 µAdc µAdc Gate Threshold Voltage Gate—Source Leakage Current (Vds = 28 Vdc, Id = 1 mA) (VGS = 5 Vdc, VDS = 0) Gate Quiescent Voltage ON CHARACTERISTICS (Vds = 28 Vdc, Id = 250 mA) VGS(th) IGSS 2.5 — 3.0 — 4.0 1 Vdc µAdc VDS(Q) 2.5 3.5 4.5 Vdc Drain-Source On-Voltage (Vgs = 10 Vdc, Id = 1 A) VDS(on) — 0.2 — Vdc Forward Transconductance (Vgs = 10 Vdc, Id = 1 A) Gm — 1.0 — S Crss — 0.9 — pF Gps 12 12.8 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) EFF (ŋ) — 32 — % Two-Tone Third Order Intermod (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — -30 — dBc Input Return Loss (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — -12 — dB Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) Gps 12 12.8 — dB Two-Tone Drain Efficiency (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) EFF (ŋ) — 32 — % Two-Tone Third Order Intermod (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) IMD — -30 — dBc Input Return Loss (VDS = 28 Vdc, POUT = 15 W PEP. IDQ = 150 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz) IRL — -12 -10 dB DC CHARACTERISTICS @ 25ºC Characteristic Drain-Source Breakdown Voltage GS = 0 Vdc, ID = 20 µAdc) OFF(V CHARACTERISTICS Typ Max Unit DYNAMIC CHARACTERISTICS @ 25ºC Reverse Transfer Capacitance DYNAMIC CHARACTERISTICS (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture) (2) Two-Tone Common-Source Amplifier Power Gain (VDS = 28 Vdc,TESTS POUT = 15 PEP. IDQ = 150 mA, FUNCTIONAL (InWM/A-COM Test Fixture) (2) f1 = 2170.0 MHz, f2 = 2170.1 MHz) Output VSWR Tolerance (VDD = 28 Vdc, Pout = 30 W, IDQ = 250 mA, f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary C1,C5 Tantalum Electrolytic Surface Mt. Cap., 100 µF C2,C6 Ceramic Chip Capacitor, 0.1 µF C3,C7 Ceramic Chip Capacitor, 1000 pF C4,C8,C10,C15 Chip Capacitor, 8.2 pF ATC100B C9 Chip Capacitor, 1.5 pF ATC100B C11,C12 Chip Capacitor, 0.1 pF ATC100B C13,C14 Chip Capacitor, 0.7 pF ATC100B C16 Chip Capacitor, 0.5 pF ATC100B Z1-Z9 Distributed Microstrip Element J1,J2 SMA Connector, Omni Spectra 2052-5636-02 L1 Inductor, 8 nH, CoilCraft A03T L2 Inductor, 18.5 nH, CoilCraft A05T P1,P2 Connector, AMP 640457-4 Q1 Transistor, MAPLST2122-015WF R1 Chip Resistor (0805), 100k Ohm R2 Chip Resistor (0805), 1K Ohm PC Board Taconix (TLX-8) Woven Glass Teflon Teflon .031” Thick, Er=2.55, 1 Oz Copper Both Sides Figure 1. 2110—2170 MHz Test Fixture Schematic Figure 2. 2110—2170 MHz Test Fixture Component Layout 3 RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary 25.0 5MHz Offset/4.096MHz BW, 15 DTCH 13.5 22.5 13.0 20.0 12.5 17.5 12.0 15.0 11.5 12.5 11.0 10.0 10.5 Efficiency (%) Gain(dB) 14.0 7.5 Gain (150mA) 10.0 9.5 Gain (100mA) 5.0 Eff (150mA) 2.5 0.0 3.16 2.51 2.00 1.26 1.00 0.79 0.63 0.50 0.40 0.32 0.25 0.20 9.0 1.58 Eff (100mA) POUT(W-Avg.) Graph 1. W-CDMA Power Gain and Drain Efficiency vs. Output Power 3.16 2.51 2.00 1.58 1.26 1.00 0.79 0.63 0.50 0.40 0.32 0.25 0.20 POUT(W- Avg.) -30 5MHz Offset/4.096MHz BW, 15 DTCH ACPR (dBc) -35 -40 -45 -50 ACPR (150mA) -55 ACPR (100mA) Graph 2. W-CDMA Adjacent Channel Power Ratio vs. Output Power 4 RF Power LDMOS Transistor, 2110 — 2170 MHz, 15W, W-CDMA MAPLST2122-015CF 8/20/2003 Preliminary Package Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit www.macom.com for additional data sheets and product information. 5 North America: Tel. 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