GaAs SPDT Switch DC-6 GHz MASW6010G V 2.00 ■ ■ ■ ■ Low Insertion Loss, 0.5 dB Typical @ 4 GHz Fast Switching Speed, 4ns Typical Ultra Low DC Power Consumption Integral Static Protection Guaranteed Specifications** @25°C*** Frequency Range DC - 6000 MHz Insertion Loss DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz 0.6 dB Max 0.8 dB Max 1.4 dB Max DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz 45 dB Min 38 dB Min 22 dB Min DC - 1.0 GHz DC - 2.0 GHz DC - 6.0 GHz 1.1:1 Max 1.2:1 Max 1.9:1 Max Typical Performance @ +25°C Insertion Insertion LossLoss (dB) 1.4 Isolation Loss (dB) 1.2 VSWR +85°C 1.0 0.8 -55°C 0.6 0.4 0.2 +25°C 0 1 2 3 4 5 Frequency GHz Frequency GHz 6 7 6 7 Isolation @@+25°C Isolation +25°C 80 Operating Characteristics 0/-5 0/-8 +27 dBm +21 dBm +33 dBm Typ +26 dBm Typ Intermodulation Intercept Point (for two-tone input power up to +5 dBm) Intercept Points IP2 Above 500 MHz 100 MHz +68 dBm +62 dBm 40 20 0 1 2 3 4 5 Frequency GHz Frequency GHz VSWR @NP +25°C MASW6010 VSWR 2.0 1.8 1.6 1.4 IP3 1.2 +46 dBm Typ +40 dBm Typ 1.0 Control Voltages (Complementary Logic) V INLow 0 to -0.2V @ 20 µA Max V INHi -5V @ 50 µA Typ to -8V @ 300 µA Max Die Size 50 30 VSWR Above 500 MHz 100 MHz 2 ns Typ 4 ns Typ 10 mV Typ 60 Loss (dB) Switching Characteristics tRISE, tFALL (10/90% or 90/10% RF) tON, tOFF (50% CTL to 90/10% RF) Transients (In-Band) Input Power for 1 dB Compression Control Voltages (Vdc) 70 50 Ω Nominal Impedance 0.031" x 0.031" x 0.010" (0.80mm x0.80mm x 0.25mm) * Equivalent to Anzac SW200 ** All specifications apply with 50 Ω impedance connected to all RF ports, 0 and -8 Vdc control voltages. *** Loss change 0.0025 dB/°C. (From -55°C to +85°C) 0 Schematic 1 2 3 4 5 Frequency GHz Frequency GHz 6 7 Handling, Mounting, Bonding Procedure MASW6010G V 2.00 Handling Precautions Permanent damage to the MASW6010 may occur if the following precautions are not adhered to: Truth Table A. Cleanliness – The MASW6010 should be handled in a clean environment. DO NOT attempt to clean unit after the MASW6010 is installed. Control Input Condition Of Switch RFCommon To Each RF Port B. Static Sensitivity – All chip handling equipment and personnel should be DC grounded. C. Transient – Avoid instrument and power supply transients while bias is applied to the MASW6010.Use shielded signal and bias cables to minimize inductive pick-up. D. Bias – Apply voltage to either control port A/B or only when the other is grounded. Neither port should be allowed to “float”. E. General Handling – It is recommended that the MASW6010 chip be handled along the long side of the die with a sharp pair of bent tweezers. DO NOT touch the surface of the chip with fingers or tweezers. Mounting The MASW6010 is back-metallized with Pd/Ni/Au (100/1,000/ 30,000Å) metallization.It can be die-mounted with AuSn eutectic preforms or with thermally conductive epoxy. The package surface should be clean and flat before attachment. Eutectic Die Attach: A. A 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255°C and a tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290°C. B. DO NOT expose the MASW6010 to a temperature greater than 320°C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: A. Electrically conductive epoxy must be used. B. Apply a minimum amount of epoxy and place the MASW6010 into position. A thin epoxy fillet should be visible around the perimeter of the chip. C. Cure epoxy per manufacturer's recommended schedule. Wire Bonding A. Ball or wedge bond with 1.0 mil diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150°C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Ultrasonic energy and time should be adjusted to the minimum levels to achieve reliable wirebonds. B. Wirebonds should be started on the chip and terminated on the package. A B RF1 RF2 V inHi V inLow VinLow VinHi On Off Off On Vin Low 0 to -0.2V VinHi -5V to -8V Maximum Ratings A. Control Voltage (A / B): -8.5 Vdc B. Max Input RF Power: +42 dBm (500 MHz - 6 GHz) C. Storage Temperature: -65°C to +175°C D. Maximum Operating Temperature: +175°C Bonding Pad Dimensions Inches (mm) RFcom: 0.004 x 0.004 (0.100 x 0.100) RF2,RF3: 0.004 x 0.004 (0.100 x 0.100) A,B: 0.004 x 0.004 (0.100 x 0.100) GND1,GND2: 0.012 x 0.004 (0.300 x 0.100) Die Size Inches (mm) 0.031 x 0.031 x 0.010 (0.80 x 0.80 x 0.25)