MAXIM MAX5950ETJ

19-0545; Rev 0; 6/06
KIT
ATION
EVALU
LE
B
A
IL
A
AV
12V PWM Controller with Hot-Swap
The MAX5950 is a 12V pulse-width modulated (PWM),
step-down, DC-DC controller with integrated hot-swap
controller. The device operates over the 8V to 16V inputvoltage range or 5V ±10% and provides an adjustable
output from 0.8V to 5.5V. The device delivers up to 10A
of load current with excellent load-and-line regulation.
The MAX5950 is optimized for PCIe® ExpressModule™
power-management application.
The MAX5950 features a hot-swap controller that provides inrush current control during module insertion
and removal, as well as short-circuit protection during
normal operation. The MAX5950 features an internal
charge pump that provides the gate drive for an external n-channel MOSFET. A DCENO logic output indicates the completion of the inrush cycle.
The MAX5950 PWM section utilizes a voltage-mode control scheme for good noise immunity and offers external
compensation, allowing for maximum flexibility with a
wide selection of inductor values and capacitor types.
The device operates at a fixed switching frequency that
is programmable from 100kHz to 1MHz and can be synchronized to an external clock signal through the
SYNCIN input. The device includes undervoltage lockout
(UVLO) and digital soft-start. Protection features include
lossless valley-mode current limit, hiccup-mode output
short-circuit protection, and thermal shutdown.
The MAX5950 is available in a space-saving 5mm x
5mm, 32-pin thin QFN package and is specified for
operation over the -40°C to +85°C extended temperature range. Refer to the MAX5951 data sheet for a pincompatible, general-purpose PWM controller.
Features
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
♦
8V to 16V or 5V ±10% Input-Voltage Range
Integrated Hot-Swap Controller
Lossless Valley-Mode Current Sensing
Output Voltage Adjustable from 0.8V to 5.5V
Voltage-Mode Control
External Compensation for Maximum Flexibility
Digital Soft-Start
Sequencing or Ratiometric Tracking
Startup Synchronization
Programmable PGOOD Output
Programmable Switching Frequency from 100kHz
to 1MHz
External Frequency Synchronization
SYNCIN and SYNCOUT Enable 180° Out-of-Phase
Operation
Thermal Shutdown and Short-Circuit Protection
Space-Saving 5mm x 5mm, 32-Pin TQFN Package
Ordering Information
PART
TEMP RANGE
PINPACKAGE
MAX5950ETJ+
-40°C to +85°C
32 TQFN-EP*
*EP = Exposed pad.
Pin Configuration
ILIM
SENSE
FB
COMP
PGOOD
STARTUP
RT
CS+
20
19
18
17
16
SYNCIN
PGND 26
15
SYNCOUT
DL 27
14
AGND
DREG 28
13
THRESH
12
DCENI
DH 30
11
DCENO
BST 31
10
PGI
REG 32
9
MPWRGD
MAX5950
3
4
5
6
7
8
PWRFLT
2
PWREN
1
HUVLO
LX 29
+
PCIe is a registered trademark and ExpressModule is a
trademark of PCI-SIG Corp.
21
IN
Work Stations
22
GATE
Base Stations
23
HSENSE
RAID
24
CS- 25
PUVLO
Blade Servers
TOP VIEW
PWM_IN
General 12V-Input PWM Controllers with
Hot-Swap
T3255-4
+Denotes lead-free package.
Applications
PCIe ExpressModule
PKG
CODE
TQFN
(5mm x 5mm)
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX5950
General Description
MAX5950
12V PWM Controller with Hot-Swap
ABSOLUTE MAXIMUM RATINGS
DL to PGND...............................................-0.3V to (VDREG + 6V)
DH to LX ....................................................-0.3V to (VBST + 0.3V)
PGND to AGND .....................................................-0.3V to +0.3V
Input Current (any pin) .....................................................±50mA
Continuous Power Dissipation
32-Pin TQFN (derate 34.5 mW/°C above +70°C) ...2758.6mW
32-Pin TQFN (θJA) ......................................................+29°C/W
32-Pin TQFN (θJC)........................................................2.1°C/W
Operating Ambient Temperature Range .............-40°C to +85°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) ...…………………….+300°C
IN to AGND.............................................................-0.3V to +24V
HSENSE, PWM_IN to AGND........................-0.3V to (VIN + 0.3V)
GATE to AGND.......................................................-0.3V to +30V
GATE to PWM_IN ....................................................-0.3V to +6V
PWREN, PWRFLT, MPWRGD, HUVLO, PGI, DCENO
to AGND ................................................................-0.3V to +6V
BST to AGND..........................................................-0.3V to +30V
BST to LX..................................................................-0.3V to +6V
CS- to AGND.......................................-0.3V to (VPWM_IN + 0.3V)
REG, DREG, PUVLO, DCENI, SYNCIN, THRESH,
SENSE to AGND....................................................-0.3V to +6V
RT, ILIM, STARTUP, PGOOD, FB, CS+ to AGND ....-0.3V to +6V
SYNCOUT, COMP to AGND.....................-0.3V to (VREG + 0.3V)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VIN = VPWM_IN = 12V or VIN = VPWM_IN = VREG = 5V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 100kΩ, RILIM = 60kΩ,
CREG = 2.2µF, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at TA = TJ = +25°C.) (Note 1)
PARAMETER
Input-Voltage Range
SYMBOL
VIN
CONDITIONS
VIN = VPWM_IN = VREG = VDREG
(Note 2)
MIN
TYP
MAX
8
16
4.5
5.5
UNITS
V
Standby Supply Current
VIN = 16V, VPWM_IN = VHUVLO = 0V
1.0
1.6
mA
Quiescent Supply Current
VIN = VPWM_IN = 16V, VFB = 0.9V
2.3
3.7
mA
Switching Supply Current
VIN = VPWM_IN = 16V, VFB = 0V
6
9
mA
7.3
V
1.238
V
HOT-SWAP UVLO
Default Hot-Swap Undervoltage
Lockout Threshold
VIN rising
6.7
Hot-Swap UVLO Hysteresis
HUVLO Threshold
0.7
VHUVLO
VHUVLO rising
1.202
HUVLO Hysteresis
1.220
V
122
HUVLO Input Impedance
180
310
mV
500
kΩ
HOT-SWAP PWREN CONTROL
PWREN Input High-Level Voltage
2
V
PWREN Input Low-Level Voltage
0.8
PWREN Input Hysteresis
260
PWREN Input Pullup Resistance
50
PWREN Clamp Voltage
IPWREN = 1mA
PWREN High-to-Low Deglitch Time
100
V
mV
160
4.8
kΩ
V
6.5
10.5
15.0
ms
VIN - VHSENSE
553
613
673
mV
VHSENSE = 12V
-1
+1
µA
HOT-SWAP CIRCUIT-BREAKER COMPARATOR
Circuit-Breaker Threshold
VCB
HSENSE Input Bias Current
HOT-SWAP GATE CONTROL
GATE Charge Current
GATE High Voltage
2
IGATE
VGATE - VPWM_IN, sourcing 1µA
4
5
6
µA
4.7
5.4
6.1
V
_______________________________________________________________________________________
12V PWM Controller with Hot-Swap
(VIN = VPWM_IN = 12V or VIN = VPWM_IN = VREG = 5V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 100kΩ, RILIM = 60kΩ,
CREG = 2.2µF, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at TA = TJ = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
GATE Pulldown Resistance
Sinking 1mA to AGND
Hot-Swap FET Enhancement
Threshold
VGATE rising
MIN
3.45
Hot-Swap FET Enhancement
Hysteresis
TYP
4.0
MAX
UNITS
40
Ω
4.65
V
70
mV
10
µA
HOT-SWAP LOGIC OUTPUTS
DCENO Internal Pullup Current
PWRFLT, MPWRGD Input
Leakage
-1
PWRFLT, MPWRGD, DCENO
Output Voltage Low
Sinking 2.4mA
MPWRGD Power-On-Reset Time
100
165
+1
µA
50
mV
250
ms
HOT-SWAP LOGIC INPUTS
PGI Input High-Level Voltage
2
V
PGI Input Low-Level Voltage
0.8
PGI Input Hysteresis
260
PGI Blanking Time from DCENO
High
100
165
V
mV
250
ms
7.3
V
PWM UVLO
Default PWM Undervoltage
Lockout Threshold
VPWM_IN rising
6.7
PWM Undervoltage Lockout
Hysteresis
PUVLO Threshold
0.7
VPUVLO
VPUVLO rising
1.202
PUVLO Hysteresis
1.22
V
1.238
122
PUVLO Input Impedance
180
310
V
mV
500
kΩ
3
V
+10
mV
PWM DCENI CONTROL
DCENI Comparator Input
Common-Mode Range
DCENI Comparator Offset
0
VDCENI - VTHRESH
-10
DCENI Comparator Hysteresis
100
mV
DCENI Input Current
-1
+1
µA
THRESH Operating Voltage Range
0.6
2.5
V
VTHRESH > 0.6V
-1.5
+1.0
VTHRESH < 0.3V
-5
+1
VTHRESH < 0.3V
1.202
1.22
1.238
V
788
800
812
mV
THRESH Input Current
Default DCENI Threshold
µA
PWM PGOOD OUTPUT
SENSE Threshold
SENSE Hysteresis
VSENSE rising
100
mV
_______________________________________________________________________________________
3
MAX5950
ELECTRICAL CHARACTERISTICS (continued)
MAX5950
12V PWM Controller with Hot-Swap
ELECTRICAL CHARACTERISTICS (continued)
(VIN = VPWM_IN = 12V or VIN = VPWM_IN = VREG = 5V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 100kΩ, RILIM = 60kΩ,
CREG = 2.2µF, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at TA = TJ = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
SENSE Input Bias Current
MIN
TYP
-1
PGOOD Internal Pullup Current
MAX
UNITS
+1
µA
50
mV
10
PGOOD Output-Voltage Low
µA
IPGOOD = -2.4mA
INTERNAL VOLTAGE REGULATOR
Output-Voltage Set Point
VREG
4.7
Line Regulation
VPWM_IN = 8V to 16V
Load Regulation
IREG = 0 to 50mA
5.3
V
1
mV/V
150
mV
100
1000
kHz
fSW ≤ 500kHz
-2.5
+2.5
fSW > 500kHz
-4
+4
fSW ≤ 500kHz
-3.5
+3.5
fSW > 500kHz
-5
PWM OSCILLATOR
Oscillator Frequency Range
fSW
VSYNCIN = 0V, fSW = 5 x 1010 / RRT Hz
TA = TJ = +25°C
Oscillator Accuracy
TA = TJ =
-40°C to +85°C
RT Voltage
VRT
Maximum Duty Cycle
50kΩ ≤ RRT ≤ 500kΩ
VSYNCIN = 0V, VPWM_IN = 12V
SYNCIN High Level Voltage
82
+5
2
V
88
%
2.1
V
SYNCIN Low Level Voltage
SYNCIN Pulldown Resistor
50
%
100
0.8
V
150
kΩ
SYNCIN Rising to SYNCOUT
Falling Delay
10
ns
SYNCIN Falling to SYNCOUT
Rising Delay
30
ns
Maximum SYNCIN Frequency
1
SYNCOUT Voltage High
VHSYNCOUT ISYNCOUT = +1.2mA
SYNCOUT Voltage Low
VLSYNCOUT
MHz
VREG - 0.1
V
ISYNCOUT = -2.4mA
50
mV
PWM ERROR AMPLIFIER
FB Input Range
0
VREF
V
FB Input Current
-250
+250
nA
COMP Output-Voltage Range
ICOMP = -500µA to +500µA
0.25
Open-Loop Gain
Unity-Gain Bandwidth
fGBW
Reference Voltage
VREF
ICOMP = -500µA to +500µA
792
VREG - 0.5
V
80
dB
2.5
MHz
800
808
mV
PWM COMPARATOR
Comparator Offset Voltage
0.3
V
Comparator Propagation Delay
40
ns
1024
Clocks
128
Steps
6.3
mV
PWM DIGITAL SOFT-START
Soft-Start Duration
Reference Voltage Steps
4
_______________________________________________________________________________________
12V PWM Controller with Hot-Swap
(VIN = VPWM_IN = 12V or VIN = VPWM_IN = VREG = 5V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 100kΩ, RILIM = 60kΩ,
CREG = 2.2µF, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at TA = TJ = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
PWM RAMP GENERATOR
Ramp Amplitude
1.8
V
PWM CURRENT-LIMIT COMPARATOR AND HICCUP MODE
Cycle-by-Cycle Valley CurrentLimit Threshold Adjustment Range
Limit = VILIM / 10
50
350
Cycle-by-Cycle Valley CurrentLimit Threshold Tolerance
VILIM = 0.5V
44.5
55.5
VILIM = 3.5V
330
366
ILIM Reference Current
VILIM = 0 to 3.5V, TA = TJ = +25°C
19
VCS+ = 0V, VCS- = -0.3V, current out of the CS_
-1
ILIM Reference Current Tempco
20
21
3333
CS+, CS- Input Bias Current
mV
mV
µA
ppm/°C
+20
µA
PWM HICCUP MODE
Number of Cumulative CurrentLimit Events to Hiccup
NCL
8
Clocks
Number of Consecutive NonCurrent Limit Cycles to Clear NCL
NCLR
3
Clocks
Hiccup Timeout
NHT
512
Clocks
PWM STARTUP INPUT
STARTUP Threshold
VSUT
VSUT rising
STARTUP Threshold Hysteresis
Internal Pullup Current
STARTUP Output Voltage Low
1.1
1.9
250
ISTART
mV
10
ISTARTUP = -2.4mA
V
µA
50
mV
PWM DH DRIVER
Peak Source Current
VDH,LX = 0V, pulse width < 100ns, VBST, LX = 5V
2
A
Peak Sink Current
VDH,LX = 5V, pulse width < 100ns, VBST, LX = 5V
2
A
DH Resistance Sourcing
IDH = 50mA, VBST, LX = 5V
1
3
Ω
DH Resistance Sinking
IDH = -50mA, VBST, LX = 5V
1
3
Ω
Peak Source Current
VDL = 0V, pulse width < 100ns, VDREG = 5V
2
Peak Sink Current
VDL = 5V, pulse width < 100ns, VDREG = 5V
2
DL Resistance Sourcing
IDL = 50mA, VDREG = 5V
1
3
DL Resistance Sinking
IDL = -50mA, VDREG = 5V
1
3
PWM DL DRIVER
Break-Before-Make Time
A
A
Ω
Ω
25
ns
+135
°C
15
°C
THERMAL SHUTDOWN
Thermal-Shutdown Temperature
TJ rising
Thermal-Shutdown Hysteresis
Note 1: Limits at -40°C are guaranteed by design and are not production tested.
Note 2: For 5V applications, connect REG directly to PWM_IN.
_______________________________________________________________________________________
5
MAX5950
ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(Typical Application Circuits. VIN = VPWM_IN = 12V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 49.9kΩ, RILIM = 48.7kΩ, CREG
= 2.2µF, TA = +25°C, unless otherwise noted.)
CIRCUIT-BREAKER THRESHOLD
vs. TEMPERATURE
1.21
-15
10
35
60
560
-40
85
10
9
-15
10
35
60
8
-40
85
-15
10
35
TEMPERATURE (°C)
TEMPERATURE (°C)
MPWRGD POWER-ON RESET TIME
vs. TEMPERATURE
GATE CHARGE CURRENT
vs. TEMPERATURE
GATE HIGH VOLTAGE
vs. TEMPERATURE
5.75
IGCC (µA)
170
5.25
5.00
4.75
160
4.50
150
60
85
60
85
5.8
VGATE - VPWM_IN (V)
5.50
180
85
MAX5950 toc06
190
VIN = 8V - 16V
60
6.0
MAX5950 toc05
6.00
MAX5950 toc04
5.6
5.4
5.2
4.25
140
4.00
-15
10
35
60
85
-15
10
35
60
5.0
-40
85
-15
10
35
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
PWM UNDERVOLTAGE LOCKOUT
THRESHOLD vs. TEMPERATURE
DEFAULT DCENI THRESHOLD
vs. TEMPERATURE
SENSE THRESHOLD
vs. TEMPERATURE
1.27
DCENI THRESHOLD (V)
1.27
1.24
1.21
1.24
1.21
1.18
1.18
-15
10
35
TEMPERATURE (°C)
60
85
1.15
-40
808
MAX5950 toc09
1.30
MAX5950 toc07
1.30
1.15
-40
-40
SENSE THRESHOLD (mV)
-40
MAX5950 toc08
MPWRGD POWER-ON RESET TIME (ms)
600
11
TEMPERATURE (°C)
200
6
620
580
1.18
1.15
-40
12
PWREN DELAY (ms)
1.24
13
MAX5950 toc02
640
VIN - VHSENSE (mV)
1.27
VHUVLO (V)
660
MAX5950 toc01
1.30
PWREN DELAY
vs. TEMPERATURE
MAX5950 toc03
HOT-SWAP UNDERVOLTAGE LOCKOUT
THRESHOLD vs. TEMPERATURE
VPUVLO (V)
MAX5950
12V PWM Controller with Hot-Swap
804
800
796
792
-15
10
35
TEMPERATURE (°C)
60
85
788
-40
-15
10
35
TEMPERATURE (°C)
_______________________________________________________________________________________
12V PWM Controller with Hot-Swap
5.10
5.10
5.04
5.00
VREG (V)
5.05
VREG (V)
VREG (V)
5.05
5.06
MAX5950 toc11
5.15
MAX5950 toc10
5.15
REG OUTPUT VOLTAGE
vs. INPUT VOLTAGE
REG OUTPUT VOLTAGE
vs. LOAD CURRENT
MAX5950 toc12
REG OUTPUT VOLTAGE
vs. TEMPERATURE
5.00
5.02
5.00
4.95
4.90
4.90
4.85
4.85
-15
10
35
60
85
4.96
0
10
20
30
50
40
8
10
12
16
14
TEMPERATURE (°C)
IREG (mA)
PWM_IN (V)
SWITCHING FREQUENCY
vs. RRT
SWITCHING PERIOD
vs. RRT
SWITCHING FREQUENCY
vs. TEMPERATURE
10
MAX5950 toc13a
900
8
SWITCHING PERIOD (µs)
800
9
700
600
500
400
1030
RRT = 49.9kΩ
1020
7
1010
fSW (kHz)
1000
MAX5950 toc13b
-40
fSW (kHz)
4.98
6
5
4
300
3
200
2
MAX5950 toc14
4.95
1000
990
980
1
100
50 100 150 200 250 300 350 400 450 500
RRT (kΩ)
RRT (kΩ)
TEMPERATURE (°C)
FB REFERENCE VOLTAGE
vs. TEMPERATURE
OPEN-LOOP GAIN/PHASE
vs. FREQUENCY
VALLEY CURRENT-LIMIT THRESHOLD
vs. VILIM
140
120
40
30
100
20
10
0
792
80
60
-10
788
-40
-20
-15
10
35
TEMPERATURE (°C)
60
85
0
10
100
1k
10k
100k
FREQUENCY (Hz)
1M
40
10M
10
35
60
85
MAX5950 toc17
VALLEY CURRENT-LIMIT THRESHOLD (mV)
796
160
60
50
-15
350
200
180
80
70
GAIN (dB)
800
-40
PHASE (deg)
804
MAX5950 toc16
100
90
MAX5950 toc15
808
VREF (mV)
970
50 100 150 200 250 300 350 400 450 500
300
250
200
150
100
50
500
1000
1500
2000
2500
3000
3500
VILIM (mV)
_______________________________________________________________________________________
7
MAX5950
Typical Operating Characteristics (continued)
(Typical Application Circuits. VIN = VPWM_IN = 12V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 49.9kΩ, RILIM = 48.7kΩ, CREG
= 2.2µF, TA = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuits. VIN = VPWM_IN = 12V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 49.9kΩ, RILIM = 48.7kΩ, CREG
= 2.2µF, TA = +25°C, unless otherwise noted.)
DL, DH DRIVER ON-RESISTANCE
vs. TEMPERATURE
120
110
100
90
80
VFB = 0.9V
3.25
1.75
3.00
1.50
VPWM_IN = 16V
1.25
RESISTANCE SOURCING
1.00
RESISTANCE SINKING
0.75
2.75
IQ (mA)
130
2.00
MAX5950 toc19
MAX5950 toc18
RILIM = 48.7kΩ
DRIVER ON-RESISTANCE (Ω)
VALLEY CURRENT-LIMIT THRESHOLD (mV)
140
QUIESCENT SUPPLY CURRENT
vs. TEMPERATURE
MAX5950 toc20
VALLEY CURRENT-LIMIT THRESHOLD
vs. TEMPERATURE
VPWM_IN = 12V
2.50
0.50
2.25
0.25
70
0
60
-40
-15
10
35
-40
85
60
-15
10
35
TEMPERATURE (°C)
SWITCHING SUPPLY CURRENT
vs. TEMPERATURE
STARTUP WAVEFORM
2.00
-40
85
-15
10
35
STARTUP WAVEFORM
MAX5950 toc21
5.75
35
60
IINRUSH
1A/div
PWREN
5V/div
VPWM_IN = 12V
10
MAX5950 toc22b
IN
10V/div
VPWM_IN = 16V
-15
85
GATE
1OV/div
VGATE
1OV/div
PWM_IN
1OV/div
VPWM_IN
1OV/div
4ms/div
TEMPERATURE (°C)
1ms/div
PWREN SWITCHING FROM HIGH TO LOW
STARTUP
PGOOD SEQUENCING (FIGURE 1)
MAX5950 toc23b
MAX5950 toc23a
DCEN0 = DCENI1
5V/div
VPWM_IN = 12V
DCENO = DECENI1
5V/div
OUT1
1V/div
OUT2
1V/div
OUT3
1V/div
PGI
5V/div
MPWRGD
2V/div
PWRFLT
2V/div
PGOOD3 = PG1
5V/div
1ms/div
PWREN SWITCHING FROM HIGH TO LOW
8
85
VIN = 12V
6.25
6.00
60
TEMPERATURE (°C)
MAX5950 toc22a
6.50
5.50
-40
60
TEMPERATURE (°C)
6.75
ISW (mA)
MAX5950
12V PWM Controller with Hot-Swap
40ms/div
PWREN SWITCHING FROM HIGH TO LOW
_______________________________________________________________________________________
12V PWM Controller with Hot-Swap
TRACKING (FIGURE 1)
STARTUP SEQUENCING (FIGURE 1)
MAX5950 toc23d
MAX5950 toc23c
DCEN0 = DCENI1 =
STARTUP
5V/div
OUT1
1V/div
OUT2
1V/div
OUT3
1V/div
DCEN0 - DCENI_ =
STARTUP_
5V/div
OUT1
1V/div
OUT2
1V/div
PGI = PGOOD3
5V/div
PGOOD_
5V/div
MAX5950
Typical Operating Characteristics (continued)
(Typical Application Circuits. VIN = VPWM_IN = 12V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 49.9kΩ, RILIM = 48.7kΩ, CREG
= 2.2µF, TA = +25°C, unless otherwise noted.)
OUT3
1V/div
CSTART = 1µF
400µs/div
2ms/div
PWREN SWITCHING FROM HIGH TO LOW
PWREN SWITCHING FROM HIGH TO LOW
STARTUP FAULT
0V
OUT1
1V/div
0V
OUT2
2V/div
0V
OUT3
SHORTED
TO PGND
2V/div
PGI = PGOOD3
5V/div
0V
0V
MAX5950 toc25a
MAX5950 toc24b
DCEN0 =
DCENI1 =
STARTUP_
5V/div
20ms/div
DCEN0 =
DCENI1 =
STARTUP_
5V/div
VOUT1
1V/div
0V
0V
0V
0V
OUT1
1V/div
0V
IOUT1
2A/div
PGI = PGOOD3
1V/div
MPWRGD
2V/div
0V
LX
10V/div
0V
0V
DL
10V/div
0V
STARTUP
5V/div
MPWRFLT
2V/div
0V
4µs/div
40ms/div
PWREN SWITCHING FROM HIGH TO LOW
PWREN SWITCHING FROM HIGH TO LOW
OUT3 SHORTED TO PGND
OVERLOAD RESPONSE (HICCUP MODE)
SHORT-CIRCUIT RESPONSE
(HICCUP MODE)
SHORT-CIRCUIT RESPONSE
MAX5950 toc25b
MAX5950 toc26a
OUT1
1V/div
MAX5950 toc26b
OUT1
SHORTED
TO PGND
1V/div
VOUT1 SHORTED
TO PGND
1V/div
IOUT1
2A/div
400µs/div
OVERLOAD RESPONSE
STARTUP FAULT
MAX5950 toc24a
LX
10V/div
LX
10V/div
DL
10V/div
DL
5V/div
STARTUP
5V/div
STARTUP
5V/div
2µs/div
IOUT1
2A/div
LX
10V/div
DL
10V/div
STARTUP
5V/div
400µs/div
_______________________________________________________________________________________
9
Typical Operating Characteristics (continued)
(Typical Application Circuits. VIN = VPWM_IN = 12V, VDREG = VREG, VPGND = 0V, VSYNCIN = 0V, RRT = 49.9kΩ, RILIM = 48.7kΩ, CREG
= 2.2µF, TA = +25°C, unless otherwise noted.)
SYNCHRONIZATION
BREAK-BEFORE-MAKE TIME
BREAK-BEFORE-MAKE TIME
MAX5950 toc27
MAX5950 toc28b
MAX5950 toc28a
SYNCIN2 =
SYNCOUT1
5V/div
LX
5V/div
LX1
10V/div
LX1
5V/div
DL
5V/div
DL1
5V/div
DL1
5V/div
IOUT1 = 0.5A
EFFICIENCY vs. LOAD CURRENT
80
VPWM_IN = 8V
VPWM_IN = 12V
50
VPWM_IN = 5V
40
80
EFFICIENCY (%)
70
VPWM_IN = 16V
70
VPWM_IN = 12V
50
VPWM_IN = 8V
40
30
20
20
VOUT = 3.3V
VPWM_IN = 16V
60
30
10
VPWM_IN = 5V
90
0
0.2
0.4
0.6
0.8
VIN = 8V
VIN = 5V
80
70
60
VIN = 16V
50
VIN = 12V
40
20
10
VOUT = 2.5V
10
VOUT = 1.2V
0
0
1.0
90
30
0
0
100
MAX5950 toc30
MAX5950 toc29
90
EFFICIENCY vs. LOAD CURRENT
100
EFFICIENCY (%)
EFFICIENCY vs. LOAD CURRENT
100
60
10ns/div
10ns/div
MAX5950 toc31
200ns/div
EFFICIENCY (%)
MAX5950
12V PWM Controller with Hot-Swap
0.2
0.4
0.6
0.8
1.0
0
0.5
1.0
ILOAD (A)
ILOAD (A)
1.5
2.0
ILOAD (A)
LOAD-TRANSIENT RESPONSE
LOAD-TRANSIENT RESPONSE
MAX5950 toc33
MAX5950 toc32
2.5A
IOUT1
1A/div
IOUT1
1A/div
1.25A
0A
0A
VOUT1
20mV/div
AC-COUPLED
VOUT1
50mV/div
AC-COUPLED
400µs/div
10
400µs/div
______________________________________________________________________________________
2.5
12V PWM Controller with Hot-Swap
PIN
NAME
1
PWM_IN
PWM Controller Input Voltage
FUNCTION
2
PUVLO
PWM UVLO Divider Center Point. Use an external divider to override the internal PWM UVLO divider.
The rising threshold is set to 1.220V with 122mV hysteresis. Leave PUVLO unconnected for the
default PWM UVLO.
3
HSENSE
4
GATE
Hot-Swap Negative-Sense Input. Connect HSENSE close to the hot-swap FET source.
Hot-Swap Gate-Drive Output. Connect GATE to the gate of an external n-channel MOSFET.
Supply Input Connection. Connect to an external voltage source from 8V to 16V.
For 5V input application, connect IN = PWM_IN = REG to a 5V ±10% source. Connect an external
divider from IN to PUVLO to AGND to lower the startup voltage. Connect an external divider from IN to
HUVLO to AGND to override the hot-swap undervoltage lockout threshold.
5
IN
6
HUVLO
Center Point of the Hot-Swap UVLO Divider. Use an external divider to override the internal hot-swap
UVLO divider. The rising threshold is 1.220V with 120mV hysteresis. Leave HUVLO unconnected for
the default hot-swap UVLO.
7
PWREN
Active-Low Power-Enable Input. Pull PWREN low for at least 10ms for the hot-swap to commence.
Active-low PWREN is internally pulled high.
8
PWRFLT
Active-Low Power-Fault Output. This open-drain output latches low when a hot-swap or PWM fault
occurs. Pulse PWREN high, then low or cycle the power supply to clear the latch.
9
MPWRGD
Active-Low Module Power-Good Output. This open-drain output goes low 165ms after the hot-swap
is completed. MPWRGD indicates that both hot-swap and downstream DC-DC switchers are
operating properly.
10
PGI
Power-Good Input. Connect PGI to the PGOOD outputs of the DC-DC switchers. PGI is used to
indicate that all the output voltages of the DC-DC switchers are in range. PGI blanks for 165ms after
the hot-swap is completed to allow for DC-DC startup. The hot-swap circuit shuts down if PGI is not
pulled high before the blanking period ends.
11
DCENO
DC-DC Enable Output. This output goes high once the hot-swap is completed. Use DCENO to enable
downstream DC-DC switchers.
12
DCENI
DC-DC Enable Input. DCENI must be above VTHRESH for the PWM controller to start. Connect to REG
if not used.
13
THRESH
DC-DC Enable Input Threshold Set. Connect a resistive divider from REG to THRESH to AGND to set
the DCENI threshold. Connect to ground for a default threshold of 1.220V.
14
AGND
15
SYNCOUT
16
SYNCIN
17
RT
18
STARTUP
19
PGOOD
20
COMP
Analog Ground Connection. Solder the exposed pad to a large AGND plane. Connect AGND and
PGND together at one point near the input bypass capacitor return terminal.
Synchronization Output. SYNCOUT is a synchronization signal to drive the SYNCIN of a second
MAX5950/MAX5951, if used. Leave SYNCOUT unconnected when not used.
Synchronization Input. SYNCIN accepts the SYNCOUT from another MAX5950/MAX5951 and shifts
switching by 180°, allowing the reduction of the input bypass capacitors. When used, drive with a
frequency at least 20% higher than the frequency programmed through the RT pin. If phase
staggering is desired, use 50% duty cycle. Connect SYNCIN to AGND when not used.
Oscillator Timing Resistor Connection. Connect a 500kΩ to 50kΩ resistor from RT to AGND to
program the switching frequency from 100kHz to 1MHz.
Startup Input. STARTUP coordinates simultaneous soft-start for multiple converters. See the Tracking
(STARTUP) section.
Power-Good Output. PGOOD output goes high when SENSE is above VREF and STARTUP is high.
Error Amplifier Output. Connect COMP to the compensation feedback network.
______________________________________________________________________________________
11
MAX5950
Pin Description
MAX5950
12V PWM Controller with Hot-Swap
Pin Description (continued)
PIN
NAME
21
FB
22
SENSE
FUNCTION
Feedback Regulation Point. Connect to the center tap of a resistive divider from the converter output
to AGND to set the output voltage. The FB voltage regulates to the reference voltage.
Output Voltage Sense. Connect a resistive divider from the converter output to SENSE to AGND to
monitor the programmed output voltage. SENSE is compared to the internal reference, VREF.
23
ILIM
Valley Current-Limit Set Output. Connect a 25kΩ to 175kΩ resistor, RILIM, from ILIM to AGND to
program the valley current-limit threshold from 50mV to 350mV. ILIM sources 20µA out to RILIM. The
resulting voltage divided by 10 is the valley current limit. Alternatively, a resistive divider from REG to
ILIM to AGND can be used to set the valley current limit.
24
CS+
Positive Current-Sense Input. Connect CS+ to the synchronous MOSFET source (connected to
PGND).
25
CS-
Negative Current-Sense Input. Connect CS- to the synchronous MOSFET drain (connected to LX).
26
PGND
27
DL
28
DREG
Gate-Drive Supply for the Low-Side MOSFET Driver. Connect externally to REG and anode of the
boost diode.
29
LX
Source Connection of the High-Side MOSFET and Drain Connection of the Synchronous MOSFET.
Connect the inductor and the negative side of the boost capacitor to LX.
30
DH
High-Side Gate-Driver Output. DH drives the gate of the high-side MOSFET.
31
BST
High-Side Gate-Driver Supply. Connect BST to the cathode of the boost diode and to the positive
terminal of the boost capacitor.
32
REG
—
EP
Power-Ground Connection. Connect the input filter capacitor’s negative terminal, the source of the
synchronous MOSFET, and the output filter capacitor’s return to PGND. Connect externally to AGND
at a single point near the input capacitor return terminal.
Low-Side Gate-Driver Output. DL is the gate-driver output for the synchronous MOSFET.
5V Regulator Output. Bypass with a 2.2µF ceramic capacitor to AGND.
Exposed Pad. Connect the exposed pad to AGND.
Detailed Description
The MAX5950 is a PWM, step-down, DC-DC controller
with integrated hot-swap controller. The device operates over the 8V to 16V or 5V ±10% (VIN = VPWM_IN =
VREG) input-voltage range and provides an adjustable
output from 0.8V to 5.5V. The device delivers up to 10A
of load current with excellent load-and-line regulation.
The MAX5950 features a hot-swap controller that provides inrush current control during module insertion and
removal, as well as short-circuit protection during normal
operation. Normally, when a line card is plugged into a
live backplane, the card’s discharged filter capacitors
provide a low impedance that can momentarily cause
the main power supply to collapse. The MAX5950 provides inrush current limiting by slowly enhancing the
pass transistor (nMOS) when the board is plugged in,
allowing the system to stabilize safely. The device provides short-circuit protection by disconnecting the load
12
in the event of a fault condition. The MAX5950 features
an internal charge pump that provides the gate drive for
the external n-channel MOSFET.
The MAX5950 PWM controller utilizes a voltage-mode
control scheme for good noise immunity and offers
external compensation, allowing for maximum flexibility
with a wide selection of inductor values and capacitor
types. The device operates at a fixed switching frequency that is programmable from 100kHz to 1MHz
and can be synchronized to an external clock signal
through the SYNC input. The device includes UVLO
and digital soft-start. Protection features include valleymode current limit, hiccup-mode output short-circuit
protection, and thermal shutdown.
The MAX5950 is optimized for PCIe ExpressModule
power-management application. Table 1 shows the
PCIe ExpressModule power-supply rail requirements.
______________________________________________________________________________________
12V PWM Controller with Hot-Swap
MAX5950
Table 1. PCIe ExpressModule Power-Supply Rail Requirements
POWER RAIL
SINGLEWIDE
DOUBLEWIDE
POWER RAIL
SINGLEWIDE
DOUBLEWIDE
+3.3VAUX
+12V Bulk
±15% (max)
Voltage Tolerance
±10% (max)
±10% (max)
2.08A (max)
4.17A (max)
Continuous
Current
475mA (max)
950mA (max)
Initial Hot-Plug
Capacitance
5000pF (max)
5000pF (max)
Peak Precharge
Current
475mA (peak)
950mA (peak)
Input Capacitance
500µF (max)
500µF (max)
Input Capacitance
150µF (max)
300µF (max)
3ms (max)
3ms (max)
Voltage Tolerance
Continuous
Current
±15% (max)
Precharge Pin
Timing
Notes For Table 1:
1. The +12V power hot-swap circuits are located on the module.
2. Currents during hot insertion do not exceed the module maximum continuous current.
3. The module and connector are not damaged during hot removal or insertion.
4. The +3.3VAUX power precharges the module’s +3.3VAUX input capacitors during hot insertion through first precharge pin mating.
5. Peak precharge current during hot insertion is determined by the value of the precharge resistor. Single wide example:
precharge resistor = +3.3V/475mA = 7mΩ.
6. +3.3VAUX precharge pin timing is the maximum time guaranteed during hot insertion from the +3.3VAUX precharge pin mating
to the main power pin’s mating. The time constant with the maximum input capacitance and precharge resistor do not exceed
1/3 of the precharge pin timing.
7. Example: 150µF x 7Ω = 1ms (which is 1/3 the maximum precharge pin timing of 3ms).
8. The maximum current slew rate for each add-in module is no more than 0.1A/µs.
9. Each add-in module limits its capacitance on each power rail at the backplane connector to that listed in the above table.
10. Continuous current = the highest averaged current value over any 1s period.
Hot-Swap Controller
Startup and Undervoltage Lockout
The startup period begins 10ms after VIN exceeds the
default hot-swap UVLO threshold (7V typ) and PWREN
is low. This prevents the MAX5950 from turning on the
external MOSFET until VIN exceeds the lockout threshold for 10ms to protect the external MOSFET from insufficient gate-drive voltage. The 10ms timeout ensures
that the board is fully plugged into the backplane and
that IN is stable. Any negative input-voltage transient at
IN below the UVLO threshold resets the device and initiates a new startup cycle.
Override the internal hot-swap UVLO divider by connecting a resistive divider from IN to HUVLO to AGND.
The HUVLO threshold is 1.220V with 120mV hysteresis.
During startup, the MAX5950 limits the inrush current
by controlling the external n-channel MOSFET gate
voltage, thus slowly enhancing the MOSFET.
Normal Operation (Circuit Breaker)
In normal operation, the device provides short-circuit
protection by monitoring the voltage drop across the onresistance of the n-channel MOSFET (VIN - VHSENSE),
and comparing the voltage drop to the circuit-breaker
threshold, 600mV (typ). The MAX5950 quickly forces
and latches the MOSFET off when the circuit-breaker
threshold is reached.
DCENO, PWRFLT, MPWRGD
The MAX5950 integrates a DC-DC enable-output
(DCENO) that goes high after hot-swapping is completed
and PGI has been driven high. Use DCENO to enable
downstream PWM controllers and allow a smooth transition from inrush to power mode.
The device features an open-drain power-good output
(MPWRGD) that goes low 165ms after hot-swap is completed and PGI has been driven high. MPWRGD low
indicates that both hot-swap and downstream DC-DC
converters are operating properly.
The device includes an open-drain power-fault output
(PWRFLT) that latches low when a fault is detected by
the hot-swap controller. Possible faults include a circuit-breaker event, a thermal-shutdown event, or if PGI
is not pulled high within 165ms after DCENO goes high.
When such a fault is detected, the MAX5950 forces and
latches off the inrush-controlled MOSFET, and DCENO
goes low to shut down the DC-DC converters. Pulse
PWREN high, then low or cycle the power supply to
clear the latch.
______________________________________________________________________________________
13
MAX5950
12V PWM Controller with Hot-Swap
PWREN, PGI
MOSFET Gate Drivers (DH, DL)
The active-low power-enable input, PWREN, is internally
pulled high. Pull PWREN low for at least 10ms for the
hot-swap to commence. Connect PGI to the PGOOD
outputs of the DC-DC converters. PGI is used to indicate that all the output voltages of the DC-DC converters
are in range. PGI blanks for 165ms after the hot-swap is
completed to allow for the DC-DC converters to startup.
The high-side (DH) and low-side (DL) drivers drive the
gates of the external n-channel MOSFETs. The drivers’
2A peak source-and-sink current capability provides
ample drive to assure fast rise and fall times of the
switching MOSFETs. Short rise and fall times minimize
switching losses. For low-output voltage applications
where the duty cycle is less than 50%, choose a highside MOSFET (Q2) with a moderate RDS(ON). Choose a
low-side MOSFET (Q1) with a very low RDS(ON).
The gate-driver circuitry also provides a break-beforemake time (25ns typ) to prevent shoot-through currents
during transition.
PWM Controller
PWM UVLO
VPWM_IN must exceed the default PWM UVLO threshold (7V typ) before any PWM operation can commence.
The UVLO circuitry keeps the MOSFET drivers, oscillator, and all the internal circuitry shut down to reduce
current consumption.
Override the internal PWM UVLO divider by connecting
an external resistive divider from IN to PUVLO to AGND.
The PUVLO threshold is 1.220V with 120mV hysteresis.
Digital Soft-Start
The MAX5950 soft-start feature allows the load voltage
to ramp up in a controlled manner, eliminating outputvoltage overshoot. Soft-start begins after V PWM_IN
exceeds the UVLO threshold. The soft-start circuitry
gradually ramps up the reference voltage. This controls
the rate of rise of the output voltage and reduces input
surge currents during startup. The soft-start duration is
1024 clock cycles. The output voltage is incremented
through 128 equal steps. The output reaches regulation
when soft-start is completed, regardless of output
capacitance and load.
Internal Linear Regulator (REG)
REG is the output terminal of a 5V LDO, which is powered from PWM_IN and provides power to the IC.
Bypass REG to GND with a 2.2µF ceramic capacitor.
Place the capacitor physically close to the MAX5950 to
provide good bypassing. REG is intended for powering
only the internal circuitry and should not be used to
supply power to external loads.
Low-Side MOSFET Driver Supply (DREG)
DREG is the supply input for the low-side MOSFET driver. Connect DREG to REG externally. Adding an RC filter (5Ω and 2.2µF ceramic capacitor) from REG to DREG
filters out the high-peak currents of the MOSFET drivers.
Oscillator/Synchronization Input (SYNCIN)/
Synchronization Output (SYNCOUT)
Use an external resistor at RT to program the MAX5950
switching frequency from 100kHz to 1MHz.
Choose the appropriate resistor at RT to calculate the
desired output switching frequency (fSW):
fSW (Hz) = (5 x 1010) / RRT (Ω)
Connect an external clock (SYNCOUT from another
MAX5950/MAX5951) at SYNCIN for external clock synchronization. For proper synchronization, the external frequency must be at least 20% higher than the frequency
programmed through the RT input. If SYNCIN is 50% duty
cycle, SYNCOUT is shifted by 180°, allowing the reduction of the DC-DC converter input bypass capacitor.
SYNCOUT is a synchronization signal that is used to
drive the SYNCIN of a second MAX5950/MAX5951.
Tracking (STARTUP)
The STARTUP input in conjunction with digital soft-start
provides simple ratiometric tracking. When using multiple MAX5950s/MAX5951s, in addition to connecting
SYNCIN and SYNCOUT signals appropriately, connect
the STARTUP of all the devices together. STARTUP synchonizes the soft-start of all the devices’ references, and
hence their respective output voltages track ratiometrically. See Figure 1 and the Typical 0perating Circuits.
The STARTUP input has an internal 10µA pullup current, but can be driven by external logic. When using
multiple converters, connect the STARTUP of all the
devices together.
High-Side MOSFET Driver Supply (BST)
BST supplies the power for the high-side MOSFET drivers. Connect the bootstrap diode from BST to DREG
(anode at DREG and cathode at BST). Connect a bootstrap 1µF ceramic capacitor between BST and LX.
14
______________________________________________________________________________________
12V PWM Controller with Hot-Swap
PGI
DCENO
MAX5950
PGOOD
SEQUENCING
STARTUP
SEQUENCING
TRACKING
PGI
PGI
DCENI1
DCEN0
REG1
DCENI1
DCENI1
THRESH1
THRESH1
THRESH1
PGOOD1
PGOOD1
PGOOD1
DCENI2
DCENI2
REG2
DCENI2
THRESH2
THRESH2
PGOOD2
THRESH2
PGOOD2
PGOOD2
DCENI3
DCENI3
REG3
THRESH3
DCENI3
PGOOD3
THRESH3
THRESH3
STARTUP1
STARTUP2
PGOOD3
PGOOD3
STARTUP1
DCENO
STARTUP3
STARTUP1
STARTUP2
STARTUP2
STARTUP3
STARTUP3
CSTART
Figure 1. Tracking, STARTUP Sequencing, and PGOOD Sequencing Configurations
Startup Sequencing (DCENI, THRESH)
The DCENI input must be above VTHRESH for the PWM
controller to start. By connecting the DCENI inputs of
multiple devices together and having different start
thresholds (VTHRESH_), the startup of the PWM controllers can be staggered to provide power sequencing.
Connect a resistive divider from REG to THRESH to
AGND to set the start thresholds of each device
between 0.6V and 2.5V. Connect THRESH to AGND to
produce a default 1.220V threshold for DCENI.
Connecting THRESH to REG disables the converter.
See Figure 1 and the Typical Operating Circuit.
______________________________________________________________________________________
15
MAX5950
12V PWM Controller with Hot-Swap
Power-Good Sequencing (PGOOD, SENSE)
The PGOOD outputs and DCENI inputs can be daisychained to generate power sequencing. The PGOOD
output is pulled high when the voltage at SENSE is
above VREF (800mV typ). Connect a resistive divider
from the power-supply output voltage to SENSE to
AGND to set the power-good threshold. See Figure 1
and the Typical Operating Circuits.
Error Amplifier
The output of the internal error amplifier (COMP) is available for frequency compensation (see the
Compensation Design Guidelines section). The inverting
input is FB; the output is COMP. The error amplifier has
an 80dB open-loop gain and a 2.5MHz GBW product.
See the Typical Operating Characteristics section for
the Open-Loop Gain and Phase vs. Frequency graph.
PWM Comparator
If the current-limit threshold is exceeded for eight cumulative clock cycles (NCL), the device shuts down (both
DH and DL are pulled low) for 512 clock cycles (hiccup
timeout) and restarts with a soft-start sequence. If three
consecutive cycles pass without a current-limit event,
the count of NCL is cleared (Figure 2). Hiccup mode
protects against continuous output short circuit.
Thermal-Overload Protection
The MAX5950 features an integrated thermal-overload
protection with temperature hysteresis. Thermal-overload protection limits the total power dissipation in the
device and protects it in the event of an extended thermal fault condition. When the die temperature exceeds
+135°C, an internal thermal sensor shuts down the
device, turning off the power MOSFETs and allowing
the die to cool. After the die temperature falls by
+15°C, the part restarts with a soft-start sequence.
An internal ramp is compared against the output of the
error amplifier to generate the PWM signal. The amplitude of the ramp, VRAMP, is 1.8V.
Hot-Swap Controller Design
Procedures
Output Short-Circuit Protection
(Hiccup Mode)
Connect an external resistive divider from IN to HUVLO
to AGND to override the internal hot-swap UVLO
divider. The rising threshold at HUVLO is set to 1.220V
with 120mV hysteresis. First, select the HUVLO to
AGND resistor (R2), then calculate the resistor from IN
to HUVLO (R1) using the following equation:
The current-limit circuit employs a lossless valley current-limiting algorithm that uses the MOSFET’s on-resistance as the current-sensing element. Once the
high-side MOSFET turns off, the voltage across the lowside MOSFET is monitored. If the voltage across the
low-side MOSFET (RDS(ON) x I INDUCTOR ) does not
exceed the current-limit threshold, the high-side
MOSFET turns on normally at the start of the next cycle.
If the voltage across the low-side MOSFET exceeds the
current-limit threshold just before the beginning of a
new PWM cycle, the controller skips that cycle. During
severe overload or short-circuit conditions, the switching frequency of the device appears to decrease
because the on-time of the low-side MOSFET extends
beyond a clock cycle.
CURRENT LIMIT
IN COUNT OF 8
NCL
Setting the Undervoltage Lockout
 VIN

R1 = R2 × 
− 1
 VHUVLO 
where VIN is the input voltage at which the hot-swap
controller needs to turn on, VHUVLO = 1.220V, and R2
is chosen to be less than 20kΩ (see Figure 3).
Leave HUVLO unconnected for the default hot-swap
UVLO threshold. In this case, an internal voltagedivider monitors the supply voltage at IN and allows
startup when IN rises above 7V (typ).
INITIATE HICCUP
TIMEOUT
NHT
IN
CLR
R1
HUVLO
IN COUNT OF 3
NCLR
R2
CLR
Figure 2. Hiccup-Mode Block Diagram
16
Figure 3. External Hot-Swap UVLO Divider
______________________________________________________________________________________
12V PWM Controller with Hot-Swap
Setting the Output Voltage
Connect a resistive divider from OUT to FB to AGND to
set the output voltage. First, calculate the resistor from
OUT to FB using the guidelines in the Compensation
Design Guidelines section. Once R3 is known, calculate R4 using the following equation:
PWM Controller Design
Procedures
Setting the Undervoltage Lockout
Connect an external resistive divider from PWM_IN to
PUVLO to AGND to override the internal PWM UVLO
divider. The rising threshold at PUVLO is set to 1.220V
with 120mV hysteresis. First, select the PUVLO to
AGND resistor (R2), then calculate the resistor from
PWM_IN to PUVLO (R1), using the following equation:
 VPWM _ IN 
R1 = R2 × 
− 1
 VPUVLO

where VPWM_IN is the input voltage at which the converter needs to turn on, VPUVLO = 1.220V, and R2 is
chosen to be less than 20kΩ (see Figure 4).
Leave PUVLO unconnected for the default PWM UVLO
threshold. In this case, an internal voltage-divider monitors the supply voltage at PWM_IN and allows startup
when PWM_IN rises above 7V (typ).
PWM_IN
R1
PUVLO
R2
Figure 4. External PWM UVLO Divider
R4 =
R3
 VOUT 
− 1

 VFB

where VFB = 0.8V.
Inductor Selection
Three key inductor parameters must be specified for
operation with the MAX5950: inductance value (L), peak
inductor current (IPEAK), and inductor saturation current
(ISAT). The minimum required inductance is a function of
operating frequency, input-to-output voltage differential,
and the peak-to-peak inductor current (∆IP-P). Higher
∆IP-P allows for a lower inductor value. A lower inductance value minimizes size and cost and improves
large-signal and transient response, but reduces efficiency due to higher peak currents and higher peak-topeak output voltage ripple for the same output
capacitor. A higher inductance increases efficiency by
reducing the ripple current; however, resistive losses
due to extra wire turns can exceed the benefit gained
from lower ripple current levels, especially when the
inductance is increased without also allowing for larger
inductor dimensions. A good rule of thumb is to choose
∆IP-P equal to 30% of the full-load current. Calculate the
inductor using the following equation:
L=
VOUT (VIN − VOUT )
VIN × fSW × ∆IP−P
VIN and VOUT are typical values so that efficiency is
optimum for typical conditions. The switching frequency is programmable between 100kHz and 1000kHz
(see the Oscillator/Synchronization Input (SYNCIN)/
Synchronization Output (SYNCOUT) section). The
peak-to-peak inductor current, which reflects the peakto-peak output ripple, is worst at the maximum input
voltage. See the Output Capacitor Selection section to
verify that the worst-case output current ripple is
acceptable. The inductor saturation current (I SAT) is
also important to avoid runaway current during continuous output short-circuit conditions. Select an inductor
with an ISAT specification higher than the maximum
peak current.
______________________________________________________________________________________
17
MAX5950
n-Channel MOSFET Selection
Select the external n-channel MOSFET according to the
application’s current level. The MOSFET’s on-resistance (RDS(ON)) should be chosen low enough to have
a minimum voltage drop at full load to limit the MOSFET
power dissipation. High RDS(ON) can cause output ripple if the board has pulsing loads. Determine the
device power-rating requirement to accommodate a
short circuit on the board at startup.
In normal operation, the product of pass MOSFET
RDS(ON) and IIN should not exceed the circuit-breaker
threshold (600mV).
MAX5950
12V PWM Controller with Hot-Swap
Input-Capacitor Selection
The discontinuous input current of the buck converter
causes large input ripple currents, therefore the input
capacitor must be carefully chosen to withstand the
input ripple current and maintain the input voltage ripple within design requirements. The total voltage ripple
is the sum of ∆VQ (caused by the capacitor discharge)
and ∆VESR (caused by the ESR of the input capacitor),
which peaks at the end of the ON cycle. Calculate the
input capacitance and ESR required for a specified ripple using the following equations:
ESR =
∆VESR
∆IP−P 

 ILOAD(MAX) +


2 
 VOUT 
ILOAD(MAX) × 

 VPWM _ IN 
CIN =
∆VQ × fSW
where
∆IP−P =
(VPWM _ IN − VOUT ) × VOUT
VPWM _ IN × fSW × L
ILOAD(MAX) is the maximum output current, ∆IP-P is the peakto-peak inductor current, and fSW is the switching frequency.
The MAX5950 includes UVLO hysteresis to avoid possible unintentional chattering during turn-on. Use additional bulk capacitance if the input source impedance is
high. When the input voltage is near the UVLO, additional input capacitance helps avoid possible undershoot
below the UVLO threshold during transient loading.
Output-Capacitor Selection
The allowed output voltage ripple and the maximum
deviation of the output voltage during load steps determine the required output capacitance and its ESR. The
output ripple is mainly composed of ∆VQ (caused by
the capacitor discharge) and ∆VESR (caused by the
voltage drop across the equivalent series resistance
(ESR) of the output capacitor). The equations for calculating the peak-to-peak output voltage ripple are:
∆IP−P
8 × COUT × fSW
∆I
∆VESR = ESR × P−P
2
∆VQ =
∆VESR and ∆VQ are not directly additive since they are
out of phase from each other. If using ceramic capacitors, which generally have low ESR, ∆VQ dominates. If
using electrolytic capacitors, ∆VESR dominates.
18
The allowable deviation of the output voltage during
load transients also affects the choice of output capacitance, its ESR, and its equivalent series inductance
(ESL). The output capacitor supplies the load current
during a load step until the controller responds with a
greater duty cycle. The response time (tRESPONSE )
depends on the closed-loop bandwidth of the converter
(see the Compensation Design Guidelines section).
The resistive drop across the output capacitor’s ESR,
the drop across the capacitor’s ESL, and the capacitor
discharge cause a voltage droop during the load step.
Use a combination of low-ESR tantalum/aluminum electrolyte and ceramic capacitors for better load transient
and voltage-ripple performance. Surface-mount capacitors and capacitors in parallel help reduce the ESL.
Keep the maximum output-voltage deviation below the
tolerable limits of the electronics being powered. Use
the following equations to calculate the required ESR,
ESL, and capacitance value during a load step:
∆VESR
ISTEP
×t
I
COUT = STEP RESPONSE
∆VQ
ESR =
ESL =
∆VESL × t STEP
ISTEP
where ISTEP is the load step, tSTEP is the rise time of the
load step, and tRESPONSE is the response time of the
controller.
Setting the Current Limit
Connect a 25kΩ to 175kΩ resistor, RILIM, from ILIM to
AGND to program the valley current-limit threshold from
50mV to 350mV. ILIM sources 20µA out to RILIM. The
resulting voltage divided by 10 is the valley current-limit
threshold.
The MAX5950 uses a valley current-sense method for
current limiting. The voltage drop across the low-side
MOSFET due to its on-resistance is used to sense the
inductor current. The voltage drop across the low-side
MOSFET at the valley point and at ILOAD(MAX) is:
∆I


VVALLEY = RDS(ON) (T) ×  ILOAD(MAX) − P −P 

2 
RDS(ON) is the on-resistance of the low-side MOSFET,
which is temperature dependent, I LOAD(MAX) is the
maximum DC load current, and ∆IP-P is the peak-topeak inductor current.
______________________________________________________________________________________
12V PWM Controller with Hot-Swap
1.5
1.4
VILIM AND RDS(ON)
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
-40
-15
10
35
60
85
TEMPERATURE (°C)
Figure 5. Current-Limit Trip Point and RDS(ON) vs. Temperature
The 20µA current source, ILIM reference current, has a
temperature coefficient of 3333ppm/°C. This allows the
valley current-limit threshold:
RILIM × 20µA (T)
10
to track and compensate for the increase in the synchronous MOSFET’s RDS(ON) with increasing temperature
range. MOSFETs typically have a temperature coefficient
of 3000ppm/°C to 7000ppm/°C. Refer to the MOSFET
data sheet for a device-specific temperature coefficient.
At a given temperature, the calculated VVALLEY must
be less than the minimum valley current-limit threshold
specified.
Figure 5 illustrates the effect of the MAX5950 ILIM reference current temperature coefficient to compensate for
the variation of the MOSFET RDS(ON) over the operating
junction temperature range.
Power-MOSFET Selection
When selecting MOSFETs, consider the total gate
charge, R DS(ON) , power dissipation, the maximum
drain-to-source voltage, package thermal impedance,
and desired current limit. The product of the MOSFET
gate charge and on-resistance is a figure of merit, with
a lower number signifying better performance. Choose
MOSFETs optimized for high-frequency switching
applications. The average gate-drive current from the
MAX5950’s output is proportional to the frequency and
gate charge required to drive the MOSFET. The power
dissipated in the MAX5950 is proportional to the input
voltage and the average drive current (see the Power
Dissipation section).
fZESR =
1
2π × COUT × RESR
The switching frequency is programmable between
100kHz and 1000kHz by an external resistor at RT. The
crossover frequency (fC), which is the frequency when
the closed-loop gain is equal to unity, should be set to
fSW / 10 or fGBW / 25, whichever is lower.
The error amplifier must provide a gain-and-phase
boost to compensate for the rapid gain-and-phase loss
from the LC double pole. This is accomplished by utilizing type 3 compensation (see Figures 6 and 7) that
introduces two zeros and three poles into the control
loop. The error amplifier has a low-frequency pole (fP1)
at the origin; two zeros at:
1
fZ1 =
2π × R5 × C7
and
fZ2 =
1
2π × R3 × C6
and higher frequency poles at:
1
fP2 =
2π × R6 × C6
and
fP3 =
1
2π × R5 × C8
______________________________________________________________________________________
19
MAX5950
Compensation Design Guidelines
The MAX5950 uses a voltage-mode control scheme that
regulates the output voltage by comparing the error
amplifier output (COMP) with an internal ramp to produce
the required duty cycle. The output lowpass LC filter creates a double pole at the resonant frequency, which has
a gain drop of -40dB/decade. The compensation network must compensate for this gain drop and phase shift
to achieve a stable closed-loop system.
The basic regulator loop consists of a power modulator,
an output feedback divider, and a voltage-error amplifier. The power modulator has a DC gain set by
VIN/VRAMP, with a double pole and a single zero set by
the output inductance (L), the output capacitance
(COUT), and its ESR. Below are equations that define
the power modulator:
VIN
GMOD(DC) =
VRAMP
1
fLC =
2π L × COUT
MAX5950
12V PWM Controller with Hot-Swap
C8
C8
R5
C6
C7
R6
R3
R3
VOUT
VOUT
EA
R4
COMP
EA
R4
COMP
REF
REF
GAIN
(dB)
C7
R5
C6
R6
GAIN
(dB)
CLOSED-LOOP
GAIN
CLOSED-LOOP
GAIN
EA
GAIN
EA
GAIN
fZ1 fZ2
fC
fP2 fP3
FREQUENCY
fZ1 fZ2
fP2
fC
fP3
FREQUENCY
Figure 6. Error Amplifier Compensation Circuit (Closed-Loop
and Error-Amplifier Gain Plot) for Ceramic Capacitors
Figure 7. Error-Amplifier Compensation Circuit (Closed-Loop
and Error-Amplifier Gain Plot) for Higher ESR Output Capacitors
Compensation when fC < fZESR
Figure 6 shows the error-amplifier feedback, as well as its
gain response for circuits that use low-ESR output capacitors (ceramic). In this case, fC occurs before fZESR.
fZ1 is set to 0.5 x fLC and fZ2 is set to fLC to compensate for the gain-and-phase loss due to the double
pole. Choose the inductor (L) and output capacitor
(C OUT ) as described in the Inductor Selection and
Output-Capacitor Selection sections.
Pick a value for feedback resistor R5 in Figure 6 (values
between 1kΩ and 10kΩ are adequate). C7 is then calculated as:
Since GEA(fC) x GMOD(fC) = 1, C6 is calculated by:
C7 =
1
2π × 0.5 × fLC × R5
fC occurs between fZ2 and fP2. The circuit is implemented with C7 > C8 and R3 > R6, in which case the
error-amplifier gain (GEA) at fC is due primarily to C6
and R5. Therefore:
GEA(fc) = 2π × fC × C6 × R5
The modulator gain at fC is:
GMOD(fC) =
20
GMOD(DC)
(2π) × L × COUT × fC2
2
f × L × COUT × 2π
C6 = C
R5 × GMOD(DC)
R3 is then calculated as:
R3 ≈
1
2π × fLC × C6
fP2 is set at 1/2 the switching frequency (f SW). R6 is
then calculated by:
R6 =
1
2π × C6 × 0.5fSW
fP3 is set at 5xfC. Therefore, C8 is calculated as:
C8 =
1
2π × R5 × 5 × fC
Compensation when fC > fZESR
For larger ESR capacitors such as tantalum and aluminum electrolytic, fZESR can occur before fC. If fC >
f ZESR , f C occurs between f P2 and f P3 . f Z1 and f Z2
remain the same as before; however, fP2 is now set
equal to fZESR. The output capacitor’s ESR zero fre-
______________________________________________________________________________________
12V PWM Controller with Hot-Swap
1
C7 =
2π × 0.5 × fLC × R5
The circuit is implemented with C7 >> C8 and R3 >>
R6, in which case the error-amplifier gain between fP2
and fP3 is approximately equal to:
R5
R6
The modulator gain at fC is:
GMOD(DC)
GMOD(fC) =
(2π) × L × COUT × fC2
2
Since GEA(fC) x GMOD(fC) = 1, R6 can then be calculated as:
R6 ≈
R5 × GMOD(DC)
(2π)2 × L × COUT × fC2
fP2 is set to fZESR. C6 is then calculated as:
C6 =
COUT × ESR
R6
R3 is then calculated as:
R3 ≈
1
2π × fLC × C6
fP3 is set at 5xfC. Therefore, C8 is calculated as:
C8 =
1
2π × R5 × 5 × fC
Hot-Swap Controller
Applications Information
Additional External Gate Capacitance
External capacitance can be added from the gate of the
external MOSFET to AGND to reduce the dv/dt of the
PWM controller input voltage (VPWM_IN), decreasing the
hot-swap inrush current. Add a 10kΩ resistor in series
with the added gate capacitor to prevent degrading the
device turn-off response to a fault condition.
Layout Considerations
To take advantage of the switch response time to an
output fault condition, it is important to keep all traces as
short as possible and to maximize the high-current trace
width to reduce the effect of undesirable parasitic
inductance. Use a ground plane to minimize impedance
and inductance. Minimize the trace length that connects
to IN and HSENSE (< 10mm), and ensures accurate
current sensing with Kelvin connections.
When the output is short circuited, the voltage drop
across the external MOSFET becomes large. Hence,
the power dissipation in the switch increases, as does
the die temperature. An efficient way to achieve good
power dissipation on a surface-mount package is to lay
out two copper pads directly under the MOSFET package on both sides of the board. Connect the two pads
to the ground plane through vias, and use enlarged
copper mounting pads on the top side of the board.
PWM Controller
Applications Information
Power Dissipation
The 32-pin TQFN thermally enhanced package can dissipate 2.7W. Calculate power dissipation in the
MAX5950 as a product of the input voltage and the
total REG output current (IREG). IREG includes quiescent current (IQ) and gate-drive current (IDREG):
PD = VIN x IREG
IREG = IQ + [fSW x (QG1 + QG2)]
where QG1 and QG2 represent the total gate charge of
the low-side and high-side external MOSFETs, fSW is the
switching frequency of the converter, and IQ is the quiescent current of the device at the switching frequency.
Use the following equation to calculate the maximum
power dissipation (PDMAX) in the chip at a given ambient temperature (TA):
PDMAX = 34.5 x (150 - TA)……….mW
______________________________________________________________________________________
21
MAX5950
quency is higher than fLC, but lower than the closedloop crossover frequency. The equations that define
the error amplifier’s poles and zeroes (fZ1, fZ2, fP1, fP2,
and fP3) are the same as before. However, fP2 is now
lower than the closed-loop crossover frequency. Figure
7 shows the error-amplifier feedback, as well as its gain
response for circuits that use higher ESR output capacitors (tantalum, aluminum electrolytic, etc.)
Pick a value for feedback resistor R5 in Figure 7 (values
between 1kΩ and 10kΩ are adequate). C7 is then calculated as:
MAX5950
12V PWM Controller with Hot-Swap
PC Board Layout Guidelines
Use the following guidelines to layout the switching
voltage regulator:
1) Place the PWM_IN and DREG bypass capacitors
close to the MAX5950 PGND pin. Place the REG
bypass capacitor close to the AGND pin.
2) Minimize the area and length of the high-current
loops from the input capacitor, upper switching
MOSFET, inductor, and output capacitor back to
the input capacitor negative terminal.
3) Keep short the current loop formed by the lower
switching MOSFET, inductor, and output capacitor.
4) Keep AGND and PGND isolated and connect them
at one single point close to the negative terminal of
the input filter capacitor.
5) Run current-sense lines CS+ and CS- close to each
other to minimize the loop area.
6) Avoid long traces between the REG/DREG bypass
capacitors, driver output of the MAX5950, MOSFET
gates, and PGND. Minimize the loop formed by the
REG bypass capacitors, bootstrap diode, bootstrap
capacitor, the MAX5950, and upper MOSFET gate.
7) Place the bank of output capacitors close to the
load.
8) Distribute the power components evenly across the
board for proper heat dissipation.
9) Provide enough copper area at and around the
switching MOSFETs and the inductor to aid in thermal dissipation.
10) Use 2oz copper to keep the trace inductance and
resistance to a minimum. Thin copper PC boards
can compromise efficiency since high currents are
involved in the application. Also, thicker copper
conducts heat more effectively, thereby reducing
thermal impedance.
Simplified Block Diagrams
HOT-SWAP CONTROLLER
IN
MAX5950
HUVLO
10ms RISINGEDGE DELAY
FILTER
AGND
EN
CHARGE
PUMP
GATE
IOUT
1.220V
PWREN
REG
PWM_IN
5V
THERMAL
SHUTDOWN
10µA
IN
165ms RISING
EDGE DELAY
FILTER
DCENO
0.6V
HSENSE
PWRFLT
S
MPWRGD
Q
SET DOMINANT
165ms RISINGEDGE DELAY
FILTER
R
PGI
22
______________________________________________________________________________________
12V PWM Controller with Hot-Swap
PWM CONTROLLER
PWM_IN
THRESH
PUVLO
DCENI
MAX5950
LDO
REG
REG
AGND
10µA
1.220V
EN
VREGOK
STARTUP
0.8V
REF
THERMAL
SHUTDOWN
CS+
RES
REF
CSSHDN
CLK
DIGITAL
SOFT-START
OVL
E/A
RES
OVERLOAD
MANAGEMENT
CURRENTLIMIT
SET
IMAX
CLK
ILIM
BST
FB
DH
R
SET
DOMINANT
COMP
SYNCIN
RT
Q
CPWM
EN
OSC
S
IMAX
RAMP
REG
LX
10µA
DL
REF
0.3V
DREG
CLK
PGND
STARTUP
SYNCOUT
SENSE
PGOOD
______________________________________________________________________________________
23
MAX5950
Simplified Block Diagrams (continued)
12V PWM Controller with Hot-Swap
MAX5950
Typical Operating Circuits
+3.3VAUX
PCIe EXPRESSMODULE
(TRACKING)
(SHORT PIN)
+12V
CIN
PRSNT
(SHORT PIN)
CBST
GATE HSENSE
IN
DREG
PWM_IN REG
BST
DH
Q2
HUVLO
L
PWREN
PWREN
PWRFLT
PWRFLT
VOUT1
LX
CS-
MAX5950
MPWRGD
COUT
Q1
DL
R3
R6
CS+
GND
C6
MPWRGD
THRESH
PGND
PUVLO
PGI
FB
DCENO
DCENI
AGND
PGOOD SYNCIN SYNCOUT
RT
ILIM
STARTUP
COMP
SENSE
C8
PCIe EXPRESSMODULE SLOT
RRT
C7
RILIM
R4
R5
CBST
IN
DREG
REG
BST
Q2
DH
L
VOUT2
LX
CS-
MAX5951
COUT
Q1
DL
PGND
FB
PUVLO
DCENI
AGND
PGOOD SYNCIN
SYNCOUT
RRT
RT
ILIM STARTUP
COMP
SENSE
C8
RILIM
C7
R5
24
R3
R6
CS+
THRESH
C6
______________________________________________________________________________________
R4
12V PWM Controller with Hot-Swap
PCIe EXPRESSMODULE
(STARTUP SEQUENCING)
+3.3VAUX
(SHORT PIN)
+12V
CIN
(SHORT PIN)
PRSNT
CBST
IN
GATE HSENSE
DREG
PWM_IN REG
BST
DH
Q2
HUVLO
L
PWREN
PWREN
PWRFLT
PWRFLT
MPWRGD
MPWRGD
VOUT1
LX
CS-
MAX5950
COUT
Q1
DL
THRESH
R3
R6
CS+
GND
C6
PGND
PUVLO
FB
PGI DCENO DCENI
AGND
SYNCOUT
SYNCIN
PGOOD
RT
ILIM
STARTUP
COMP
SENSE
PCIe EXPRESSMODULE SLOT
C8
C7
RILIM
RRT
R4
R5
CBST
IN
DREG
REG
BST
Q2
DH
L
VOUT2
LX
CS-
MAX5951
COUT
Q1
DL
R3
R6
CS+
THRESH
C6
PGND
FB
PUVLO
DCENI
AGND
PGOOD
SYNCIN
SYNCOUT
RRT
RT
ILIM STARTUP
COMP
SENSE
C8
C7
RILIM
R4
R5
______________________________________________________________________________________
25
MAX5950
Typical Operating Circuits (continued)
12V PWM Controller with Hot-Swap
MAX5950
Typical Operating Circuits (continued)
PCIe EXPRESSMODULE
(PGOOD SEQUENCING)
+3.3VAUX
(SHORT PIN)
+12V
CIN
(SHORT PIN)
PRSNT
CBST
IN
GATE
DREG
PWM_IN REG
HSENSE
BST
DH
Q2
HUVLO
L
PWREN
PWREN
PWRFLT
PWRFLT
MPWRGD
MPWRGD
VOUT1
LX
CS-
MAX5950
COUT
Q1
DL
THRESH
PGND
PUVLO
PGI
R3
R6
CS+
GND
C6
FB
DCENO DCENI
AGND PGOOD
SYNCIN SYNCOUT
RT
ILIM
STARTUP
COMP
SENSE
PCIe EXPRESSMODULE SLOT
RRT
C8
C7
RILIM
R4
R5
CBST
IN
DREG
REG
BST
Q2
DH
L
VOUT2
LX
CS-
MAX5951
COUT
Q1
DL
PGND
FB
PUVLO
DCENI
AGND
PGOOD
SYNCIN
SYNCOUT
RRT
RT
ILIM STARTUP
COMP
SENSE
C8
C7
RILIM
R5
26
R3
R6
CS+
THRESH
C6
______________________________________________________________________________________
R4
12V PWM Controller with Hot-Swap
USING EXTERNAL CURRENT-SENSE RESISTOR
+3.3VAUX
(SHORT PIN)
+12V
CIN
(SHORT PIN)
PRSNT
CBST
IN
GATE
HSENSE
PWM_IN
REG
DREG
BST
Q2
DH
HUVLO
L
PWREN
DL
PWRFLT
PWRFLT
MPWRGD
MPWRGD
COUT
C6
R3
R6
CS+
PGND
THRESH
FB
PUVLO
PGI
Q1
CS-
MAX5950
GND
VOUT1
LX
PWREN
DCENO DCENI
AGND
PGOOD
SYNCIN SYNCOUT RT
ILIM
STARTUP
COMP
SENSE
PCIe EXPRESSMODULE SLOT
C8
R4
RRT
R5
C7
Chip Information
PROCESS: BiCMOS
______________________________________________________________________________________
27
MAX5950
Typical Operating Circuits (continued)
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
QFN THIN.EPS
MAX5950
12V PWM Controller with Hot-Swap
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
28 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2006 Maxim Integrated Products
M. Quijano
is a registered trademark of Maxim Integrated Products, Inc.