19-3655; Rev 1; 3/06 High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller The MAX6399 is a small overvoltage and undervoltage protection circuit. The device can monitor a DC-DC output voltage and quickly disconnect the power source from the DC-DC input load when an overvoltage condition occurs. A power-OK output signals when the DC-DC input voltage falls below an adjustable threshold. This controller architecture provides the ability to size the external n-channel MOSFET to meet specific load current requirements. When the DC-DC monitored output voltage is below the user-adjustable overvoltage threshold, the GATE output of the MAX6399 goes high to enhance the n-channel MOSFET. The MAX6399 offers internal charge-pump circuitry that allows the GATE voltage to be 10V above the input voltage (VGS = 10V) to fully enhance the external n-channel MOSFET, thus minimizing the drainto-source resistance. When the monitored output voltage rises above the user-adjusted overvoltage threshold, the GATE output rapidly pulls low to shut off the MOSFET. The MOSFET remains latched off until either the MAX6399 input power or SHDN input is cycled. The MAX6399 includes a logic-low shutdown input that disables the GATE. An internal overtemperature detector also disables the gate when the MAX6399 temperature reaches the thermal-shutdown threshold. The device operates over a wide supply voltage range (5.75V to 72V) and is offered in a small TDFN package, fully specified from -40°C to +125°C. Features ♦ Wide Supply Voltage Range (5.75V to 72V) ♦ Internal Charge Pump Ensures n-Channel MOSFET is Fully Enhanced During Normal Operation (VGS = 10V) ♦ Fast GATE Shutoff During Overvoltage with 20mA Sink Capability ♦ Latches Off External n-Channel MOSFET During High-Voltage Transients ♦ Adjustable DC-DC Input Undervoltage Threshold Power-OK Output ♦ Adjustable DC-DC Output Overvoltage Thresholds ♦ Overtemperature Shutdown Protection ♦ Fully Specified from -40°C to +125°C Ordering Information PART PIN-PACKAGE MAX6399ATA-T 8 TDFN-8 TOP MARK ANE PKG CODE T833-2 Applications Networking Telecom Server RAID Typical Operating Circuit DC-DC CONVERTER Pin Configuration OUT_SET OUT GATE GND TOP VIEW OUT IN 8 7 6 5 EN 12V IN GND LOAD GATE OUT MAX6399 MAX6399 SHDN OUT_SET 2 3 4 SET POK IN 1 SHDN *EP SET 3.3V POK GND TDFN *EXPOSED PAD. CONNECT TO GND. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX6399 General Description MAX6399 High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller ABSOLUTE MAXIMUM RATINGS IN, GATE, OUT .......................................................-0.3V to +80V SHDN.............................................................-0.3V to (IN + 0.3V) OUT ........................................................................-0.3V to +80V GATE to OUT..........................................................-0.3V to +20V OUT_SET, SET, POK ..............................................-0.3V to +12V Maximum Current (All pins) ................................................50mA Continuous Power Dissipation (TA = +70°C) 8-Pin TDFN (derate 18.2mW/°C above +70°C) .........1455mW Operating Temperature Range .........................-40°C to +125°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature Range................................................+300°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VIN = 14V; CGATE = 6000pF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) PARAMETER SYMBOL Supply Voltage Range VIN IN Supply Current IIN CONDITIONS Startup Response Time 130 22 5 5.50 GATE Output-Voltage High GATE Output-Voltage Low 155 0.480 -50 SHDN rising (Note 2) GATE rising from GND to VOUT + 8V, CGATE = 6000pF, OUT = GND tOV V V % VTH nA 100 µs 1 ms 0.5 VOUT = VIN = 5V, RGATE to IN = 1MΩ VIN + 3.6V VIN + 3.8V VIN + 4.0V VOUT = VIN; VIN ≥ 14V, RGATE to IN = 1MΩ VIN + 15V VIN + 10V VIN + 10.7V µs V GATE sinking 20mA, VOUT_SET = GND 0.3 GATE Charge-Pump Current IGATE GATE to OUT Clamp Voltage VCLMP 13.8 SHDN Logic-High Input Voltage VIH 1.4 SHDN Logic-Low Input Voltage VIL GATE = GND 75 Thermal-Shutdown Temperature (Note 3) Thermal-Shutdown Hysteresis V µA 18.0 V V 0.4 V SHDN = 2V, SHDN is internally pulled down to GND SHDN Input Pulldown Current 0.517 +50 SET rising from VTH - 100mV to VTH + 100mV VOH VOL 0.5 µA mV 5 ISET GATE Rise Time SET to GATE Prop Delay With respect to GND, SET rising 4.68 VHYST tSTART V 10 VIN falling, GATE off SET Input Current UNITS 100 IN Undervoltage Lockout Hysteresis SET Threshold Hysteresis MAX 72.00 SHDN = low VIN rising, enables GATE VTH (SET) TYP SHDN = high IN Undervoltage Lockout SET Threshold Voltage MIN 5.75 V 1 µA +150 °C 20 °C POWER-OK (POK) OUT_SET Threshold VTH OUT_SET rising 1.205 1.23 (OUT_SET) 2 _______________________________________________________________________________________ 1.258 V High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller (VIN = 14V; CGATE = 6000pF, TA = -40°C to +125°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP OUT_SET Hysteresis MAX UNITS % VTH 5 (OUT_SET) OUT_SET to POK Delay VOUT_SET rising or falling POK Output Voltage Low VOL POK Leakage Current 35 µs VIN ≥ 1.5V, ISINK = 3.2mA, POK asserted 0.45 V VOUT_SET = 1.4V 100 nA Note 1: Specifications to -40°C are guaranteed by design and not production tested. Note 2: The MAX6399 powers up with the external FET in off mode (VGATE = GND). The external FET turns on tSTART after the device is powered up and all input conditions are valid. Note 3: For accurate overtemperature shutdown performance, place the device in close thermal contact with the external MOSFET. Typical Operating Characteristics (VIN = 14V, CGATE = 6nF, unless otherwise noted.) SUPPLY CURRENT vs. INPUT VOLTAGE 110 100 90 80 70 16 14 12 10 8 VOUT = VIN 10 6 60 4 50 2 20 40 20 40 4 80 60 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 510 508 506 504 502 500 498 496 494 50 75 TEMPERATURE (°C) 100 125 1.26 1.25 OUT_SET RISING 1.24 1.23 1.22 1.21 1.20 1.19 1.18 OUT_SET FALLING 1.17 1.16 490 25 10 12 14 16 18 20 22 24 OUT_SET THRESHOLD vs. TEMPERATURE 492 4.0 8 INPUT VOLTAGE (V) MAX6399 toc05 5.8 SET THRESHOLD VOLTAGE (V) MAX6399 toc04 6.0 0 6 SET THRESHOLD vs. TEMPERATURE UVLO THRESHOLD vs. TEMPERATURE -25 4 INPUT VOLTAGE (V) INPUT VOLTAGE (V) -50 6 0 0 80 60 OUT_SET THRESHOLD VOLTAGE (V) 0 8 2 0 40 VUVLO (V) 12 MAX6399 toc06 120 GATE OFF 18 SUPPLY CURRENT (µA) 130 SUPPLY CURRENT (µA) 20 VGATE - VOUT (V) GATE ON MAX6399 toc02 140 MAX6399 toc01 150 GATE-DRIVE VOLTAGE vs. INPUT VOLTAGE MAX6399 toc03 SUPPLY CURRENT vs. INPUT VOLTAGE -50 -25 0 25 50 75 TEMPERATURE (°C) 100 125 -50 -25 0 25 50 75 100 125 TEMPERATURE (°C) _______________________________________________________________________________________ 3 MAX6399 ELECTRICAL CHARACTERISTICS (continued) Typical Operating Characteristics (continued) (VIN = 14V, CGATE = 6nF, unless otherwise noted.) GATE-TO-OUT CLAMP VOLTAGE vs. TEMPERATURE GATE-DRIVE VOLTAGE vs. TEMPERATURE 10.495 GATE-DRIVE VOLTAGE (V) 16.8 16.7 16.6 16.5 16.4 16.3 10.490 10.450 75 100 125 VOUT 10V/div 10.465 10.455 50 VGATE 10V/div 10.470 16.0 25 VPOK 5V/div -50 -25 TEMPERATURE (°C) 0 25 50 75 100 2ms/div 125 TEMPERATURE (°C) STARTUP WAVEFORM (SHDN RISING) OVERVOLTAGE SWITCH FAULT MAX6399 toc10 POK PULLED TO 3.3V MAX6399 toc11 VOV = 4V VIN = 14V VSHDN 2V/div 4V 3.3V VDC_DC 100mV/div VGATE 10V/div VGATE 10V/div VOUT 10V/div VOUT 10V/div VPOK 5V/div 400µs/div UNDERVOLTAGE FAULT MAX6399 toc12 VIN 5V/div VGATE 20V/div VOUT 10V/div VUV = 9V POK PULLED TO 3.3V VPOK 5V/div 100µs/div 4 VIN 10V/div 10.475 10.460 0 VUV = 9V 10.480 16.1 -25 POK PULLED TO 3.3V 10.485 16.2 -50 MAX6399 toc09 MAX6399 toc08 16.9 STARTUP WAVEFORM 10.500 MAX6399 toc07 17.0 GATE-TO-OUT CLAMP VOLTAGE (V) MAX6399 High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller _______________________________________________________________________________________ High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller PIN NAME 1 IN FUNCTION Supply Voltage Input. Bypass with a 10µF capacitor (minimum). 2 SHDN Shutdown Input. Drive SHDN low to force GATE low, turning off the external n-channel MOSFET. SHDN is internally pulled down to GND with a 1µA current source. Toggle SHDN to unlatch GATE after an overvoltage condition. Connect to IN for normal operation. 3 SET Overvoltage Threshold Adjustment Input. Use SET to monitor a system output voltage. Connect SET to an external resistor voltage-divider network to adjust the desired overvoltage limit threshold. GATE is quickly turned off when SET rises above its 0.5V (typ) threshold. 4 POK Power-OK Open-Drain Output. POK asserts low when OUT_SET falls below its 1.23V (typ) threshold. 5 GND Ground 6 GATE Gate-Drive Output. Connect GATE to the gate of an external n-channel FET. GATE is a charge pump with a 100µA pullup current to IN + 10V (typ) during normal operation. GATE is quickly turned off during an overvoltage condition. GATE remains latched off until the power is recycled or SHDN is toggled. GATE pulls low when SHDN is low. 7 OUT Output Voltage-Sense Input. Connect to the source of the external n-channel MOSFET. Undervoltage Detector Input. Use OUT_SET to monitor the source of the MOSFET. Connect a OUT_SET resistor-divider from OUT to OUT_SET to adjust the desired undervoltage threshold. POK asserts low when OUT_SET falls below its 1.23V threshold. 8 — EP Exposed Pad. Connect to ground plane. Detailed Description IN THERMAL PROTECTION UVLO CHARGE PUMP 5V SET GATE OUT 0.5V MAX6399 1.23V SHDN POK GND OUT_SET Figure 1. Functional Diagram The MAX6399 is an ultra-small, low-current protection circuit utilized in DC-DC converter applications. The MAX6399 monitors the input and output voltages of a DC-DC converter for undervoltage and overvoltage conditions. The MAX6399 controls an external n-channel MOSFET to isolate the load during an overvoltage condition. The device allows system designers to size the external n-channel MOSFET to their load current and board size. The MAX6399 drives the MOSFET’s gate high when the monitored DC-DC output voltage is below the programmable overvoltage threshold, programmed through SET. An internal charge-pump circuit provides a guaranteed 10V gate-to-source drive to ensure low input-toload voltage drops in normal operating modes. When the monitored DC-DC output voltage rises above the user-adjusted overvoltage threshold, GATE latches low, turning off the MOSFET. The MOSFET remains off until the power is recycled or by toggling SHDN. The MAX6399 also monitors for an undervoltage condition at the input of the DC-DC converter through OUT_SET. An active-high, open-drain, power-good output can be used to drive the EN input, notifying the system when the monitored voltage is below the adjusted undervoltage voltage threshold. _______________________________________________________________________________________ 5 MAX6399 Pin Description MAX6399 High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller The MAX6399 includes internal thermal-shutdown protection, disabling the external MOSFET if the device reaches overtemperature conditions. VOV = 4V VIN = 14V 4V VDC_DC 500mV/div Shutdown Control The MAX6399 active-low SHDN input turns off the external MOSFET, disconnecting the load and reducing power consumption. After power is applied and SHDN is driven above its logic-high voltage, there is a 100µs delay before GATE begins to enhance. SHDN is also utilized to unlatch GATE after an overvoltage condition has been removed. 3V VGATE 10V/div VOUT 10V/div GATE Voltage The MAX6399 uses a high-efficiency charge pump to generate the GATE voltage. Upon VIN exceeding the 5V (typ) UVLO threshold, GATE enhances 10V above IN (for VIN ≥ 14V) with a 100µA pullup current. An overvoltage condition occurs when the voltage at SET pulls above its 0.5V threshold. When the overvoltage fault occurs (SET = 0.5V), GATE latches off, which disconnects the load from the power source (see Figure 2). After the overvoltage fault has disappeared, the fault can be unlatched by toggling SHDN or recycling the MAX6399 input. 400ns/div Figure 2. GATE Timing Diagram DC-DC CONVERTER GND DC-DC Output Overvoltage Protection The MAX6399 overvoltage protection features a fast comparator that disconnects the load from the main power line when an overvoltage condition occurs at the output of a DC-DC converter. When an overvoltage condition is sensed, the MAX6399 latches GATE off, disconnecting the power source from the DC-DC input. To unlatch GATE after an overvoltage fault has disappeared, recycle IN or toggle SHDN. Setting Output Overvoltage Threshold (SET) SET provides an accurate means of monitoring a system voltage for an overvoltage fault. Use a resistordivider network to set the desired overvoltage condition (Figure 2). SET has a rising 0.5V threshold. Begin by selecting the total end-to-end resistance, RTOTAL = R1 + R2. Choose RTOTAL to yield a total current equivalent to a minimum 100 x ISET (SET’s input bias current) at the desired overvoltage threshold. For example, with an overvoltage threshold set to 1.8V: RTOTAL < 1.8V/(100 x ISET), where ISET is SET’s 50nA input bias current. RTOTAL < 360kΩ 6 VOUT = 1.8V OUT IN VIN IN GATE MAX6399 OUT R1 SET R2 GND Figure 3. Output Overvoltage Protection Configuration Use the following formula to calculate R2: R2 = VTH × R TOTAL VOV where VTH is the 0.5V SET rising threshold and VOV is the overvoltage condition at the output of a DC-DC converter, R2 = 100kΩ, RTOTAL = R2 + R1, where R1 = 260kΩ. Use a 261kΩ standard resistor. Using a lower value for total resistance dissipates more power but provides slightly better accuracy. _______________________________________________________________________________________ High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller The MAX6399 can be used to monitor for an undervoltage condition at the input of a DC-DC converter or another system voltage by connecting an external resistor-divider at OUT_SET (Figure 4). Use the following formula to calculate the undervoltage threshold (VUV). Begin by selecting the total end-to-end resistance, RTOTAL = R1 + R2. Choose RTOTAL to yield a total current equivalent to a minimum 100 x ISET (SET’s input bias current) at the desired overvoltage threshold. For example, with an undervoltage threshold set to 9V: RTOTAL < 9V/(100 x ISET), where ISET is SET’s 50nA input bias current. RTOTAL < 1.8MΩ Use the following formula to calculate R2: R2 = VTH(OUT _ SET) × R TOTAL VUV where V TH(OUT_SET) is the 1.23V OUT_SET rising threshold and VUV is the undervoltage condition at the input of a DC-DC converter. R2 = 246kΩ, RTOTAL = R2 + R1, where R1 = 1.554MΩ. Use a 1.54MΩ standard resistor. Using a lower value for total resistance dissipates more power but provides slightly better accuracy. Power-OK (POK) Output POK is an open-drain output that goes low when OUT_SET falls below its 1.23V (typ) threshold voltage. Connect a pullup resistor from POK to a supply voltage. POK asserts high when OUT_SET ramps above 1.23V typical threshold. POK provides a valid output level down to VIN = 1.5V. Applications Information where IGATE is GATE’s 100µA sourcing current, ILOAD is the load current at the DC-DC output at startup and COUT is the ouput’s capacitor. However, most DC-DC converters have soft-start (or peak current limiting) functions that control inrush current. Input Overvoltage Protection The MAX6399 also allows overvoltage protection at the input supply (see Figure 6). When the programmed overvoltage threshold is tripped, the internal fast comparator turns off the external MOSFET, latching GATE and OUT low within t OV disconnecting the power source from the load. To unlatch the MAX6399 after an overvoltage fault, recycle IN or toggle SHDN. Input Transients Clamping During hot plug-in/unplug, stray inductance in the power path may cause voltage ringing above the normal input DC value, which may exceed the MAX6399’s 80V maximum supply rating. An input transient such as that caused by lightning can also put a severe transient peak voltage on the input rail. The following techniques are recommended to reduce the effect of transients: • Minimize stray inductance in the power path using wide traces, and minimize loop area including the power traces and the return ground path. • Add a zener diode or transient voltage suppressor (TVS) rated below the IN absolute maximum rating (Figure 7). • Add a resistor in series with IN to limit transient current going into the input. TO DC-DC CONTROLLER INPUT IN VIN GATE OUT Inrush/Slew-Rate Control Inrush current control can be implemented by placing a capacitor at GATE (Figure 5) to slowly ramp up the GATE, thus limiting the inrush current and controlling GATE’s slew rate during initial turn-on. The inrush current can be approximated using the following formula: IINRUSH = COUT CGATE × IGATE + ILOAD R3 MAX6399 3.3V OUT_SET R4 POK GND TO DC-DC ENABLE Figure 4. Setting the Undervoltage Threshold _______________________________________________________________________________________ 7 MAX6399 Monitoring for DC-DC Input Undervoltage Conditions MAX6399 High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller DC-DC CONVERTER VIN TO DC-DC CONTROLLER INPUT OUT IN CLOAD GND IN IN IN GATE OUT LOAD MAX6399 MAX6399 GATE SET CGATE OUT GND GND Figure 5. The MAX6399 Controlling GATE Inrush Current VBATT 1kΩ LOAD IN 60V TVS MAX6399 GATE OUT Figure 6. Input Overvoltage Protection Configuration Connecting a positive battery voltage to the drain of Q1 (Figure 8b) produces forward bias in its body diode, which clamps the source voltage one diode drop below the drain voltage. When the source voltage exceeds Q1’s threshold voltage, Q1 turns on. Once the FET is on, the battery is fully connected to the system and can deliver power to the device and the load. An incorrectly inserted battery reverse-biases the FET’s body diode. The gate remains at the ground potential. The FET remains off and disconnects the reversed battery from the system. The zener diode and resistor combination prevent damage to the p-channel MOSFET during an overvoltage condition. Thermal Shutdown GND Figure 7. Protecting the MAX6399 Input from High-Voltage Transients Reverse Voltage Protection Use a diode or p-channel MOSFET to protect the MAX6399 during a reverse voltage insertion (Figures 8a, 8b). Low p-channel MOSFET on-resistance of 30mΩ or less yields a forward-voltage drop of only a few millivolts (versus hundreds of millivolts for a diode, Figure 8a) thus improving efficiency in battery-operated devices. 8 The MAX6399 thermal-shutdown feature monitors the PC board temperature of the external MOSFET when the devices sit on the same thermal island. Good thermal contact between the MAX6399 and the external n-channel MOSFET is essential for the thermal-shutdown feature to effectively operate. Place the n-channel MOSFET as close as possible to OUT. When the MAX6399 junction temperature exceeds TJ = +150°C, the thermal sensor signals the shutdown logic, turning off the GATE output, allowing the device to cool. The thermal sensor turns GATE on after the IC’s junction temperature cools by 20°C. For continuous operation, do not exceed the absolute maximum junctiontemperature rating of TJ = +160°C. _______________________________________________________________________________________ High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller MAX6399 Q1 IN IN LOAD VBATT LOAD VBATT MAX6399 MAX6399 GATE GATE OUT OUT GND GND (a) (b) Figure 8. Reverse Voltage Protection Using a Diode or p-Channel MOSFET MOSFET Selection Select external MOSFETs according to the application current level. The MOSFETs on-resistance (RDS(ON)) should be chosen low enough to have minimum voltage drop at full load to limit the MOSFET power dissipation. Chip Information TRANSISTOR COUNT: 590 PROCESS: BiCMOS _______________________________________________________________________________________ 9 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) 6, 8, &10L, DFN THIN.EPS MAX6399 High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller D2 D A2 PIN 1 ID N 0.35x0.35 b PIN 1 INDEX AREA E [(N/2)-1] x e REF. E2 DETAIL A e k A1 CL CL A L L e e PACKAGE OUTLINE, 6,8,10 & 14L, TDFN, EXPOSED PAD, 3x3x0.80 mm -DRAWING NOT TO SCALE- 21-0137 G 1 2 COMMON DIMENSIONS MIN. MAX. D 0.70 2.90 0.80 3.10 E A1 2.90 0.00 3.10 0.05 L k 0.20 0.40 0.25 MIN. A2 0.20 REF. SYMBOL A PACKAGE VARIATIONS PKG. CODE N D2 E2 e JEDEC SPEC b [(N/2)-1] x e DOWNBONDS ALLOWED T633-1 6 1.50±0.10 2.30±0.10 0.95 BSC MO229 / WEEA 0.40±0.05 1.90 REF NO T633-2 6 1.50±0.10 2.30±0.10 0.95 BSC MO229 / WEEA 0.40±0.05 1.90 REF NO T833-1 8 1.50±0.10 2.30±0.10 0.65 BSC MO229 / WEEC 0.30±0.05 1.95 REF NO T833-2 8 1.50±0.10 2.30±0.10 0.65 BSC MO229 / WEEC 0.30±0.05 1.95 REF NO T833-3 8 1.50±0.10 2.30±0.10 0.65 BSC MO229 / WEEC 0.30±0.05 1.95 REF YES T1033-1 10 1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05 2.00 REF NO T1433-1 14 1.70±0.10 2.30±0.10 0.40 BSC ---- 0.20±0.05 2.40 REF YES T1433-2 14 1.70±0.10 2.30±0.10 0.40 BSC ---- 0.20±0.05 2.40 REF NO PACKAGE OUTLINE, 6,8,10 & 14L, TDFN, EXPOSED PAD, 3x3x0.80 mm -DRAWING NOT TO SCALE- 21-0137 G 2 2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 10 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2006 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products, Inc.