Order this document by MCR506/D SEMICONDUCTOR TECHNICAL DATA . . . PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. • • • • Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability. SCRs 6 AMPERES RMS 50 thru 600 VOLTS G K A A G A K CASE 77-08 (TO-225AA) STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 110°C, RGK = 1 kΩ) MCR506-2 MCR506-3 MCR506-4 MCR506-6 MCR506-8 RMS Forward Current (All Conduction Angles) Symbol Value VDRM VRRM Unit Volts 50 100 200 400 600 IT(RMS) 6 Amp Average Forward Current (TC = 93°C) IT(AV) 3.82 Amp Peak Non-repetitive Surge Current (1/2 Cycle, 60 Hz, TJ = –40 to 110°C) 40 Amp Circuit Fusing Considerations (t = 8.3 ms) ITSM I2t 2.6 A2s Peak Gate Power PGM 0.5 Watt PG(AV) 0.1 Watt Peak Forward Gate Current IGM 0.2 Amp Peak Reverse Gate Voltage VRGM 6 Volts TJ –40 to 110 °C Tstg –40 to 150 °C — 6 in. lb. Average Gate Power Operating Junction Temperature Range Storage Temperature Range Mounting Torque(2) 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Torque rating applies with use of torque washer (Shakeproof WD19523 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heat sink contact pad are common. (See AN290 B) For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +225°C. For optimum results, an activated flux (oxide removing) is recommended. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 3 °C/W Thermal Resistance, Junction to Ambient RθJA 75 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000 Ohms unless otherwise noted.) Symbol Min Typ Max Unit Peak Forward Blocking Current (VD = Rated VDRM, TJ = 110°C) IDRM — — 200 µA Peak Reverse Blocking Current (VR = Rated VRRM, TJ = 110°C) IRRM — — 200 µA Forward “On” Voltage (ITM = 12 A Peak) VTM — — 1.9 Volts Gate Trigger Current (Continuous dc) (VAK = 7 Vdc, RL = 100 Ohms) (VAK = 7 Vdc, RL = 100 Ohms, TC = –40°C) IGT — — — — 200 500 Gate Trigger Voltage (Continuous dc) (VAK = 7 Vdc, RL = 100 Ohms, TC = 25°C) VGT — — 1 Volts Gate Non-Trigger Voltage (VAK = Rated VDRM, RL = 100 Ohms, TJ = 110°C) VGD 0.2 — — Volts IH — — 5 mA dv/dt — 10 — V/µs Characteristic Holding Current (VAK = 7 Vdc, TC = 25°C) FIGURE 1 — CURRENT DERATING FIGURE 2 — POWER DISSIPATION P(AV) , AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C) Forward Voltage Application Rate (VD = Rated VDRM, Exponential Waveform, TJ = 110°C) 110 105 100 95 90 85 80 75 70 0 2 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) µA 7.0 10.0 8.0 6.0 4.0 2.0 0 0 1.0 2.0 3.0 4.0 5.0 6.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 7.0 Motorola Thyristor Device Data PACKAGE DIMENSIONS –B– U F Q –A– C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M STYLE 2: PIN 1. CATHODE 2. ANODE 3. GATE 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 ––– MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ––– CASE 77–08 (TO–225AA) Motorola Thyristor Device Data 3 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR506/D* MCR506/D