MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. http://onsemi.com SCRs 4.0 AMPERES RMS 100 − 600 VOLTS Features • • • • • • • • • Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package − Case 369C To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves): Add ’1’ Suffix to Device Number, i.e., MCR706A1 Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb−Free Packages are Available Symbol Peak Repetitive Off−State Voltage (Note 1) (TC = −40 to +110°C, Sine Wave, 50 to 60 Hz, Gate Open) MCR703A MCR706A MCR708A VDRM, VRRM Peak Non-Repetitive Off−State Voltage (Sine Wave, 50 to 60 Hz, Gate Open, TC = −40 to +110°C) MCR703A MCR706A MCR708A VRSM On−State RMS Current (180° Conduction Angles; TC = 90°C) IT(AV) Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110°C) (1/2 Sine Wave, 1.5 ms, TJ = 110°C) ITSM Forward Peak Gate Power (Pulse Width ≤ 1.0 sec, TC = 90°C) Forward Average Gate Power (t = 8.3 msec, TC = 90°C) DPAK CASE 369C STYLE 2 YWW CR 70xAG DPAK−3 CASE 369D STYLE 2 YWW CR 70xAG 3 Max Unit V V 4 1 2 150 450 650 Average On−State Current (180° Conduction Angles) TC = −40 to +90°C TC = +100°C Circuit Fusing (t = 8.3 msec) 4 100 400 600 IT(RMS) K MARKING DIAGRAMS 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating G A 4.0 3 Y = Year WW = Work Week 70xA = Device Code x = 3, 6 or 8 G = Pb−Free Package A A 2.6 1.6 PIN ASSIGNMENT A 25 35 1 Gate 2 Anode I2t 2.6 A2sec 3 Cathode PGM 0.5 W 4 Anode PG(AV) 0.1 W ORDERING INFORMATION Forward Peak Gate Current (Pulse Width ≤ 1.0 sec, TC = 90°C) IGM 0.2 A Operating Junction Temperature Range TJ −40 to +110 °C Storage Temperature Range Tstg −40 to +150 °C See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2006 November, 2007 − Rev. 7 1 Publication Order Number: MCR703A/D MCR703A Series THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RJC 8.33 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RJA 80 °C/W TL 260 °C Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds 2. Case 369C when surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max − − − − 10 200 − − 2.2 − − 25 − 75 300 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 K) A IDRM, IRRM TC = 25°C TC = 110°C ON CHARACTERISTICS Peak Forward “On” Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) VTM Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 ) TC = 25°C TC = −40°C IGT Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 ) VGT − − − − 0.8 1.0 VGD 0.2 − − TC = 25°C TC = −40°C Gate Non-Trigger Voltage (Note 3) (VAK = 12 Vdc, RL = 100 , TC = 110°C) Holding Current (VAK = 12 Vdc, Gate Open) TC = 25°C (Initiating Current = 200 mA) TC = −40°C V A IH V V mA − − − − 5.0 10 Peak Reverse Gate Blocking Voltage (IGR = 10 A) VRGM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM − − 1.2 A tgt − 2.0 − s Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, RGK = 1 k, Exponential Waveform, TC = 110°C) dv/dt − 10 − V/s Repetitive Critical Rate of Rise of On−State Current (Cf = 60 Hz, IPK = 30 A, PW = 100 s, diG/dt = 1 A/s) di/dt − − 100 A/s Total Turn-On Time (Source Voltage = 12 V, RS = 6 k) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 s) DYNAMIC CHARACTERISTICS 3. RGK current not included in measurement. ORDERING INFORMATION Package Type Package Shipping † MCR703AT4 DPAK 369C 2500 Tape & Reel MCR703AT4G DPAK 369C (Pb−Free) 2500 Tape & Reel MCR706AT4 DPAK 369C 2500 Tape & Reel MCR706AT4G DPAK 369C (Pb−Free) 2500 Tape & Reel MCR708A DPAK 369C 2500 Tape & Reel MCR708AG DPAK 369C (Pb−Free) 2500 Tape & Reel MCR708A1 DPAK−3 369D 75 Units / Rail MCR708A1G DPAK−3 369D (Pb−Free) 75 Units / Rail MCR708AT4 DPAK 369C 2500 Tape & Reel MCR708AT4G DPAK 369C (Pb−Free) 2500 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR703A Series Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off−State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off−State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On−State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode − 30°C P(AV), AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) 110 60°C 90°C 120°C 180°C 105 DC 95 100 0 1.0 2.0 3.0 4.0 5.0 180°C DC 2.0 1.0 0 0 1.0 2.0 3.0 4.0 Figure 1. Average Current Derating Figure 2. On−State Power Dissipation Typical @ TJ = 25°C 10 Maximum @ TJ = 25°C 1.0 0.5 90°C 120°C 3.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) Maximum @ TJ = 110°C 0.1 30°C 60°C 4.0 IT(AV), AVERAGE ON−STATE CURRENT (AMPS) r(t) , TRANSIENT RESISTANCE (NORMALIZED) IT, INSTANTANEOUS ON−STATE CURRENT (AMPS) 100 5.0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 ZJC(t) = RJC(t)•r(t) 0.1 0.01 0.1 1.0 10 100 1000 VT, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On−State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 5.0 10,000 MCR703A Series 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT ( A) 35 30 0.5 25 20 15 −40 −20 0 20 40 60 80 0 100 110 −20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 2.0 2.0 IL , LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) −40 1.5 1.0 0.5 0 −40 −20 0 20 40 60 80 1.5 1.0 0.5 0 −40 100 110 −20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 4 MCR703A Series PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE −T− E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MCR703A Series PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− STYLE 2: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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