MP02TT200 MP02TT200 Dual Thyristor Water Cooled Module Preliminary Information DS5434-1.1 April 2001 FEATURES ■ Dual Device Module ■ Electrically Isolated Package ■ Pressure Contact Construction ■ International Standard Footprint ■ Alumina (Non Toxic) Isolation Medium ■ Integral Water Cooled Heatsink KEY PARAMETERS VDRM IT(AV) ITSM(per arm) IT(RMS) Visol 1600V 200A 6800A 318A 3000V G1 K1 K2 G2 2 1 3 APPLICATIONS ■ Motor Control ■ Controlled Rectifier Bridges ■ Heater Control ■ AC Phase Control Fig. 1 Circuit diagram K2 G2 VOLTAGE RATINGS Type Number MP02TT200-16 MP02TT200-15 MP02TT200-14 MP02TT200-13 MP02TT200-12 Repetitive Peak Voltages VDRM VRRM V 1600 1500 1400 1300 1200 Conditions 1 2 3 K1 G1 Tvj = 0˚ to 125˚C, IDRM = IRRM = 30mA VDSM = VRSM = VDRM = VRRM + 100V respectively Lower voltage grades available ORDERING INFORMATION Outline type code: MP02 W12/W13 Order As: MP02TT200-XX-W12 MP02TT200-XX-W13 1/4 - 18 NPT connection 1/4 BSP connection (See package details for further information) Fig. 2 Electrical connections - (not to scale) XX shown in the part number about represents VDRM/100 selection required, e.g. MP02TT200-14-W12 Note: When ordering, please use the whole part number. Auxiliary gate and cathode leads can be ordered separately. 1/9 www.dynexsemi.com MP02TT200 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Symbol IT(AV) IT(RMS ITSM I2t ITSM I2t Visol Parameter Mean on-state current RMS value Test Conditions Units Half wave resistive load, Twater (in) = 25˚C 230 A 4.5 Ltr/min Twater (in) = 40˚C 200 A Twater (in) = 50˚C 180 A Twater (in) = 25˚C @ 4.5 Ltr/min 360 A Twater (in) = 40˚C @ 4.5 Ltr/min 318 A 10ms half sine, Tj = 125˚C 6.8 kA VR = 0 0.231 x 106 A2s 10ms half sine, Tj = 125˚C 5.5 kA VR = 50% VDRM 0.15 x 106 A2s 3000 V Surge (non-repetitive) on-current I2t for fusing Surge (non-repetitive) on-current I2t for fusing Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage Max. THERMAL AND MECHANICAL RATINGS Parameter Symbol Rth(j-w) Max. Units dc, 4.5 Ltr/min - 0.3 ˚C/kW (per thyristor) Half wave, 4.5 Ltr/min - 0.32 ˚C/kW 3 Phase, 4.5 Ltr/min - 0.33 ˚C/kW Reverse (blocking) - 125 ˚C –40 125 ˚C 5 (44) - Nm (lb.ins) Virtual junction temperature Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M6 - Min. Thermal resistance - junction to water Tvj - Test Conditions Weight (nominal) - - 5 (44) Nm (lb.ins) - 1200 g 2/9 www.dynexsemi.com MP02TT200 DYNAMIC CHARACTERISTICS Parameter Symbol Test Conditions Min. Max. Units Peak reverse and off-state current At VRRM/VDRM, Tj = 125˚C - 30 mA dV/dt Linear rate of rise of off-state voltage To 67% VDRM, Tj = 125˚C - 1000 V/µs dI/dt Rate of rise of on-state current From 67% VDRM to 200A, gate source 10V, 5Ω - 500 A/µs IRRM/IDRM tr = 0.5µs, Tj = 125˚C VT(TO) rT Threshold voltage At Tvj = 125˚C - 0.98 V On-state slope resistance At Tvj = 125˚C - 0.75 mΩ Note 1: The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. GATE TRIGGER CHARACTERISTICS AND RATINGS Parameter Symbol Test Conditions Max. Units VGT Gate trigger voltage VDRM = 5V, Tcase = 25oC 3 V IGT Gate trigger current VDRM = 5V, Tcase = 25oC 150 mA VGD Gate non-trigger voltage At VDRM Tcase = 125oC 0.25 V VFGM Peak forward gate voltage Anode positive with respect to cathode 30 V VFGN Peak forward gate voltage Anode negative with respect to cathode 0.25 V VRGM Peak reverse gate voltage 5 V IFGM Peak forward gate current Anode positive with respect to cathode 10 A PGM Peak gate power See table fig. 5 100 W PG(AV) Mean gate power 5 W - - 3/9 www.dynexsemi.com MP02TT200 2000 20 Peak half sine wave on-state current - (kA) 1500 180 15 1000 10 Tj = 125˚C 500 I2t 5 100 0 0 0.5 1.0 1.5 2.0 ms Fig. 3 Maximum (limit) on-state characteristics Thermal resistance (junction to water). Rth(j-w) - (ßC/W) Gate trigger voltage, VGT - (V) Tj = 25˚C Tj = -40˚C % it er 99 lim pp U Lo VGD 0.01 0.1 w er li m 2 3 45 10 60 20 30 50 cycles at 50Hz Duration 1.0 Pulse Pulse Frequency Table gives pulse power PGM in watts Hz Width µs 50 100 400 100W 75W VFGM 20 100 100 100 50W 25 100 100 100 100 100 100 100 10W 500 100 100 25 5W 10 1ms 100 50 10ms 10 - 1.0 1 Fig. 4 Surge (non-repetitive) on-state current vs time (with 50% VRSM at Tcase = 125˚C) 100 Tj = 125˚C 10 1 2.5 Instantaneous on-state voltage, VT - (V) 0.1 0.001 140 I2t value - A2s x 103 Instantaneous on-state current, IT - (A) Measured under pulse conditions 0.1 0.01 it 1% 1.0 Gate trigger current, IGT - (A) Fig. 5 Gate characteristics 10 IFGM 0.001 0.001 0.01 0.1 1 Time - (s) 10 100 1000 Fig. 6 Transient thermal impedance - dc 4/9 www.dynexsemi.com MP02TT200 600 700 90˚ Conduction Angle 30˚ 60˚ 500 400 300 200 120˚ 180˚ 60˚ Conduction Angle 30˚ 400 300 200 100 100 0 0 0 100 200 300 Mean on-state current, IT(AV) - (A) 0 400 Fig. 7 On-state power loss per arm vs on-state current at specified conduction angles, sine wave 50/60Hz 100 200 300 Mean on-state current, IT(AV) - (A) 400 Fig. 8 On-state power loss per arm vs on-state current at specified conduction angles, square wave 50/60Hz 100 60 50 40 10 180˚ 120˚ Conduction Angle 30˚ 90˚ 20 60˚ 30 70 60 50 40 30 20 Conduction Angle 30˚ 180˚ 70 80 120˚ 80 90 90˚ 90 60˚ Max. permissible water inlet temperature - (˚C @ 4.5 l/min) 100 Max. permissible water inlet temperature - (˚C @ 4.5 l/min) 90˚ 500 On-state power loss per device - (W) On-state power loss per device - (W) 600 120˚ 180˚ 10 0 0 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 200 Fig. 9 Maximum permissible water inlet temperature vs onstate current at specified conduction angles, sine wave 50/60Hz 0 50 100 150 200 250 Mean on-state current, IT(AV) - (A) 200 Fig. 10 Maximum permissible water inlet temperature vs onstate current at specified conduction angles, square wave 50/60Hz 5/9 www.dynexsemi.com MP02TT200 1400 1300 1200 Inductive load 1100 Total power loss - (W) 1000 900 800 700 Resistive load 600 500 400 300 200 100 0 0 20 40 60 80 100 0 Max. water inlet temperature - (˚C) 100 200 300 DC output current - (A) 400 500 Fig. 11 50/60Hz single phase bridge DC output current vs power loss and maximum permissible water inlet temperature for specified values of heatsink thermal resistance 2000 1800 1600 Resistive load or Inductive load Total power loss - (W) 1400 1200 1000 800 600 400 200 0 0 20 40 60 80 100 0 Max. water inlet temperature - (˚C) 100 200 300 DC output current - (A) 400 500 Fig. 12 Fig. 11 50/60Hz Three phase bridge DC output current vs power loss and maximum permissible water inlet temperature for specified values of heatsink thermal resistance 6/9 www.dynexsemi.com MP02TT200 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 23 23 24 15 5 12.8 K2 34 24 G2 Ø6.5 13 K1 G1 80 2 Off water connectors 1/4 - 18 NTP (W12) M6 1 2 3 9.5 10.5 49 2.8 X 0.8 21.6 Water-way plug 23.8 50.8 94 2 Off Holes M3 x 0.5 10 deep Recommended fixings for mounting: M6 socket head cap screws. Auxiliary gate and cathode leads can be ordered separately. Nominal weight: 1200g Module outline type code: MP02-W12 7/9 www.dynexsemi.com MP02TT200 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 23 23 24 15 5 12.8 K2 34 24 G2 fl6.5 13 2 Off water connectors 1/4 BSP (W13) K1 G1 80 M6 1 2 3 9.5 10.5 49 2.8 X 0.8 21.6 Water-way plug 23.8 50.8 94 2 Off Holes M3 x 0.5 10 deep Recommended fixings for mounting: M6 socket head cap screws. Auxiliary gate and cathode leads can be ordered separately. Nominal weight: 1200g Module outline type code: MP02-W13 8/9 www.dynexsemi.com MP02TT200 POWER ASSEMBLY CAPABILITY The Power Assembly group provides support for those customers requiring more than the basic semiconductor switch. Using CAD design tools the group has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of Dynex semiconductors. An extensive range of air and liquid cooled assemblies is available covering the range of circuit designs in general use today. HEATSINKS The Power Assembly group has a proprietary range of extruded aluminium heatsinks. These were designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS5434-1 Issue No. 1.1 April 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 9/9 www.dynexsemi.com