3 Volt, Low Noise High fT Silicon Transistor Features • • • • • MP4T6310 Series SOT-23 High Performance at VCE = 3V Low Noise Figure at Small Currents (0.3-2 mA) High Gain (14 dB) at 1mA Collector Current High fT (14 GHz) Available on Tape and Reel Description The MP4T6310 series of low current, high fT silicon NPN bipolar transistors provides low noise figure at a bias of 3 volts and small collector current. These inexpensive surface mount NPN transistors are well suited for usage in protable battery operated wireless systems from 500 MHz through 2.5 GHz where low noise figure at small current is important. The MP4T6310 transistors series has high fT and low noise when operated with 0.3 to 2.0 milliamperes current, and 3 volt bias. The associated gain is approximately 14 dB at 1 GHz with 1 mA collector current. The MP4T6310 also has low phase noise while operating in a low power 3-5 volt battery operated VCO in the frequency range of 0.5 to 3 GHz. SOT-143 Chip The MP4T6310 transistor is designed for wireless communication systems from VHF through L-band where good noise figure and high gain at 3 volt bias and low DC current are key system requirements. Suggested uses include, 900 MHz portable phones, pagers, PCN subscriber phones and 2.4 GHz cordless and cellular hand held receivers. The MP4T6310 family of transistors is available in chip (MP4T631000), SOT-23 (MP4T631033), SOT-143 (MP4T631039), and in Micro-X (MP4T631035) packages. Surface mount packages are available on tape and reel. Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 1 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series Electrical Specifications at 25°C Symbol Parameters fT Gain Bandwidth Product Insertion Power Gain 2 |S21E| NF GTU (max) Noise Figure Unilateral Gain MAG Maximum Available Gain P1dB Power Out at 1dB Compression RTH (J-A) Thermal Resistance Test Conditions VCE = 3V IC = 6 mA VCE = 3V IC = 4 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 0.5 mA IC = 1 mA f = 1 GHz VCE = 3V IC = 4 mA f = 1 GHz f = 2 GHz VCE = 3V IC = 4 mA f = 2 GHz VCE = 3V IC = 8 mA f = 1 GHz Junction/ Ambient Units GHz MP4T631000 Chip 14 typ. MP4T631033 SOT-23 12 typ. MP4T631035 Micro-X 14 typ. MP4T631039 SOT-143 12 typ. 12 typ. 8 typ. 11 typ. 7 typ. 12 typ. 8 typ. 11 typ. 7 typ. 1.5 typ. 1.5 typ. 1.5 typ. 1.5 typ. 14.5 typ. 9 typ. 13 typ. 8 typ. 14.5 typ. 9 typ. 13 typ. 8 typ. 10 typ. 10 typ. 10 typ. 10 typ. 1.5 typ. 1 75 max 1.5 typ. 700 typ.2 1.5 typ. 600 typ.2 1.5 typ. 700 typ.2 dB dB dB dB dBm °C/W 1. Junction/Heat Sink R TH (J-C) 2. Free Air Maximum Ratings at 25°C Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature Chips or Ceramic Packages Plastic Packages Power Dissiapation Symbol VCBO VCEO VEBO IC Tj Maximum Rating 8V 6V 1.5 V 10 mA 200°C TSTG -65°C to +200°C -65°C to +125°C -60mW1 PD 1. See Typical Performance Curves for power derating. Electrical Specifications at 25°C Parameters Collector Cut-off Current Conditions VCB = 3 V IE = 0 VEB = 1 V IC = 0 VCE = 3 V IC = 3 mA VCB = 3 V IE = 0 f = 1 MHz Emitter Cut-off Current Forward Current Gain Collector Base Junction Capacitance Symbol ICBO Min. Typ. Max. 100 Units nA IEBO 1 µA hFE 20 100 200 COB 0.42 0.55 pF Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 2 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series MP4T631035 Typical Scattering Parameters in the MIcro-X Package VCE = 3 Volts, IC = 2 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.744 0.524 0.357 0.255 0.188 0.139 0.130 0.133 0.156 0.180 0.204 0.228 Angle -37.9 -69.7 -94.3 -118.6 -142.6 -171.1 168.9 140.6 122.4 105.0 89.7 78.9 Mag. 4.174 3.435 2.771 2.308 1.977 1.709 1.587 1.448 1.369 1.296 1.239 1.194 S21E Angle 137.0 109.7 89.9 75.0 62.3 51.5 41.9 33.1 23.1 15.5 7.9 0.7 Mag. 0.088 0.136 0.169 0.201 0.228 0.254 0.281 0.299 0.323 0.342 0.362 0.379 S12E Angle 63.8 51.4 45.5 41.2 37.3 33.8 29.1 25.8 21.8 17.9 14.3 10.7 Mag 0.841 0.645 0.531 0.463 0.415 0.393 0.360 0.342 0.324 0.308 0.299 0.292 S22E Angle -31.2 -48.2 -57.9 -67.5 -75.2 -81.9 91.2 -97.9 -107.8 -115.4 -123.5 -132.8 VCE = 3 Volts, IC = 4 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.558 0.324 0.217 0.169 0.147 0.141 0.145 0.167 0.196 0.223 0.251 0.275 Angle -54.5 -92.2 -119.0 -150.7 172.8 148.6 134.2 115.0 103.5 90.9 79.0 69.7 Mag. 6.582 4.537 3.299 2.635 2.204 1.888 1.719 1.562 1.465 1.381 1.314 1.260 S21E Angle 127.1 98.8 82.1 69.2 58.0 48.1 39.3 30.9 21.3 13.9 6.4 -1.4 Mag. 0.074 0.114 0.149 0.184 0.215 0.244 0.274 0.296 0.322 0.343 0.365 0.383 S12E Angle 61.9 54.8 51.4 47.4 43.3 39.4 34.5 30.7 26.2 22.0 17.8 14.1 Mag 0.727 0.523 0.437 0.387 0.353 0.330 0.315 0.305 0.288 0.275 0.267 0.262 S22E Angle -67.5 -107.3 -136.4 -168.7 163.5 138.7 126.8 109.9 100.9 89.2 77.8 68.6 Mag. 7.855 4.871 3.445 2.722 2.264 1.933 1.753 1.584 1.490 1.403 1.333 1.276 S21E Angle 120.2 93.9 78.8 66.7 56.0 46.4 37.9 29.8 20.2 13.0 5.3 -2.4 Mag. 0.067 0.107 0.144 0.179 0.212 0.241 0.273 0.294 0.322 0.344 0.367 0.385 S12E Angle 62.5 57.9 54.7 50.3 45.9 41.5 36.5 32.8 28.1 23.8 19.4 15.7 Mag 0.656 0.466 0.397 0.354 0.326 0.306 0.295 0.289 0.275 0.263 0.255 0.254 Angle -37.0 -49.9 -56.5 -65.3 -72.2 -78.6 -88.4 -95.7 -106.1 -114.0 -122.7 -132.5 VCE = 3 Volts, IC = 6 mA Frequency (MHz) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 5500 6000 S11E Mag. 0.429 0.244 0.178 0.160 0.158 0.166 0.170 0.192 0.221 0.250 0.280 0.304 S22E Angle -39.5 -49.4 -54.9 -63.5 -70.3 -76.9 -87.3 -94.3 -106.0 -114.7 -124.2 -134.7 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 3 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series Typical Performance Curves (MP4T631035) NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 V, 1 GHz vs COLLECTOR CURRENT POWER DERATING CURVES 16 80 14 M P4T 63100 0 (C H IP ) O N IN FIN IT E H E A T SIN K NOISE FIGURE (dB) ASSOCIATED GAIN (dB) POWER DISSIPATION (mW) 70 60 50 M P4T631033, 39 (S O T -2 3 , 1 4 3 ) F R E E A I R 40 30 M P 4 T 6 3 1 0 3 5 (M IC R O -X ) 20 ASSOC IATE D GAIN 12 10 8 6 4 N O ISE FIGU R E 2 10 0 0 0 25 50 75 100 125 150 0.1 175 1 COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE GAIN vs FREQUENCY at VCE=3 V and IC = 4 mA 0.6 COLL.-BASE CAPACITANCE (pF) 16 14 GAIN (dB) 12 GT U (M AX ) 10 |S 2 1E |2 8 6 4 0.5 0.4 0.3 0.2 0.1 0 2 1 1 10 10 C O LL EC T OR -B ASE VO LTA GE (Vo lts) F R E Q U E N C Y (G H z) GAIN vs COLLECTOR CURRENT at 3 GHz, VCE=3 V GAIN BANDWIDTH PRODUCT (fT ) vs COLLECTOR CURRENT at VCE=3 V 8 15 14 7 13 6 GAIN (dB) GAIN BANDWIDTH (GHz) 10 C O LLE C TO R C U R R E N T (mA ) A M B I E N T T E M P E R A T U R E (C ) 12 11 M AG 5 4 GT U (M AX ) 10 3 9 2 |S 21 E | 2 8 1 10 C O L L E C T O R C U R R E N T (m A) 1 10 C O LL EC T OR C U R R EN T (mA) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 4 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series Typical Performance Curves (MP4T631035) Cont. DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 V DC CURRENT GAIN 2 00 1 50 1 00 50 0 1 10 C OL LE C TO R C U R R E N T (mA ) OUTPUT POWER at 1 dB COMPRESSION POINT vs COLLECTOR CURRENT VCE=3V 3.5 POUT - 1dB (dBm) 3 2.5 f = 90 0 M H z 2 1.5 f = 2 GHz 1 0.5 0 6 .5 7 7 .5 8 8 .5 9 9.5 10 C OL LE C TO R C U R R E N T (mA ) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 5 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series Case Styles Chip - MP4T631000 MP4T6310500 DIM. A B C D BASE INCHES (Nominal) 0.013 0.013 0.0016 0.0045 MM (Nominal) 0.35 0.35 0.040 0.11 DIM. A B C D E F G H J K L INCHES MIN. MAX. 0.048 0.008 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 MILLIMETERS MIN. MAX. 1.22 0.20 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60 DIM. M N GRADIENT 10° max. 1 2° . . . 30° B D THICKNESS EMITTER A C 2 PLCS. SOT-23 - MP4T631033 MP4T631033 F N A D C olle c tor B M G K L H B a se E J C E m itte r NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 6 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series Case Styles (Con’t) Micro-X - MP4T631035 MP4T631035 Emitter F 4 PLCS. E H Collector INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.046 0.56 3.81 0.08 0.15 45° DIM. A B C D E F G H J K L M INCHES MIN. MAX. 0.044 0.044 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.075 typical 0.103 0.024 MILLIMETERS MIN. MAX. 1.10 1.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.90 typical 2.6 0.6 DIM. N P GRADIENT 10° max. 1 2° . . . 30° DIM. A B C D E F G H Base B Emitter A C D G MP4T631039 SOT-143 - MP4T631039 B a se E m itte r G P A J B N H L M E D F C K C olle c tor E m itte r NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 7 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Volt, Low Noise High fT Silicon Transistor MP4T6310 Series Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 8 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440