isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website:www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 6.5 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9.5 dB NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 dB NF Noise Figure IC= 40mA ; VCE= 10V;f= 1.0GHz 1.8 fT hFE Classification Class K Marking K hFE 50-300 isc Website:www.iscsemi.cn 2 50 300 GHz 1.0 3.0 pF dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website:www.iscsemi.cn isc RF Product Specification 2SC3355 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.173 -80.3 13.652 103.4 0.041 73.8 0.453 -21.8 400 0.054 -77.0 7.217 85.1 0.066 71.2 0.427 -26.0 600 0.013 -57.9 4.936 74.0 0.113 69.3 0.428 -30.8 800 0.028 81.8 3.761 62.3 0.144 67.0 0.414 -37.2 1000 0.062 82.2 3.094 58.3 0.183 64.7 0.392 -43.2 1200 0.091 80.7 2.728 52.9 0.215 61.7 0.377 -51.4 1400 0.121 80.2 2.321 44.9 0.240 58.7 0.359 -58.3 1600 0.148 80.1 2.183 36.4 0.288 50.7 0.354 -67.2 1800 0.171 80.0 1.892 30.2 0.305 46.8 0.345 -80.0 2000 0.207 79.9 1.814 21.4 0.344 39.1 0.344 -90.4 isc Website:www.iscsemi.cn 4 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 VCE = 10 V, IC = 40 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.011 -60.1 13.76 105.4 0.040 -73.3 0.421 -17.5 400 0.028 -42.9 7.338 82.9 0.069 66.7 0.416 -22.8 600 0.027 25.1 4.996 72.7 0.114 69.4 0.414 -28.7 800 0.043 65.7 3.801 61.9 0.144 67.8 0.406 -35.7 1000 0.074 75.1 3.134 57.6 0.183 63.4 0.386 -41.8 1200 0.098 75.6 2.759 52.4 0.221 62.1 0.373 -49.8 1400 0.120 74.1 2.351 44.4 0.247 55.7 0.356 -56.3 1600 0.146 75.8 2.203 36.0 0.291 49.6 0.347 -66.6 1800 0.171 77.2 1.910 29.9 0.299 46.0 0.342 -78.8 2000 0.205 78.0 1.825 21.3 0.344 39.4 0.335 -89.6 isc Website:www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER S11e, S22e-FREQUENCY S21e-FREQUENCY CONDITION VCE = 10 V CONDITION VCE = 10 V S12e-FREQUENCY IC = 40 mA isc Website:www.iscsemi.cn CONDITION VCE = 10 V IC = 40 mA 6