isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 DESCRIPTION ·Low Noise and High Gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz ·High Power Gain MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz APPLICATIONS ·Designed for low noise amplifier at VHF, UHF and CATV band. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation @TC=25℃ 0.6 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO Collector Cutoff Current VCB= 10V; IE= 0 1.0 μA IEBO Emitter Cutoff Current VEB= 1V; IC= 0 1.0 μA hFE DC Current Gain IC= 20mA ; VCE= 10V Current-Gain—Bandwidth Product IC= 20mA ; VCE= 10V 6.5 COB Output Capacitance IE= 0 ; VCB= 10V;f= 1.0MHz 0.65 ︱S21e︱2 Insertion Power Gain IC= 20mA ; VCE= 10V;f= 1.0GHz 9.5 dB NF Noise Figure IC= 7mA ; VCE= 10V;f= 1.0GHz 1.1 dB NF Noise Figure IC= 40mA ; VCE= 10V;f= 1.0GHz 1.8 fT hFE Classification Class K Marking K hFE 50-300 isc Website：www.iscsemi.cn 2 50 300 GHz 1.0 3.0 pF dB INCHANGE Semiconductor isc Silicon NPN RF Transistor isc Website：www.iscsemi.cn isc RF Product Specification 2SC3355 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER VCE = 10 V, IC = 20 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.173 -80.3 13.652 103.4 0.041 73.8 0.453 -21.8 400 0.054 -77.0 7.217 85.1 0.066 71.2 0.427 -26.0 600 0.013 -57.9 4.936 74.0 0.113 69.3 0.428 -30.8 800 0.028 81.8 3.761 62.3 0.144 67.0 0.414 -37.2 1000 0.062 82.2 3.094 58.3 0.183 64.7 0.392 -43.2 1200 0.091 80.7 2.728 52.9 0.215 61.7 0.377 -51.4 1400 0.121 80.2 2.321 44.9 0.240 58.7 0.359 -58.3 1600 0.148 80.1 2.183 36.4 0.288 50.7 0.354 -67.2 1800 0.171 80.0 1.892 30.2 0.305 46.8 0.345 -80.0 2000 0.207 79.9 1.814 21.4 0.344 39.1 0.344 -90.4 isc Website：www.iscsemi.cn 4 isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 VCE = 10 V, IC = 40 mA, ZO = 50Ω f (MHz) ︱S11︱ ∠S11 ︱S21︱ ∠S21 ︱S12︱ ∠S12 ︱S22︱ ∠S22 200 0.011 -60.1 13.76 105.4 0.040 -73.3 0.421 -17.5 400 0.028 -42.9 7.338 82.9 0.069 66.7 0.416 -22.8 600 0.027 25.1 4.996 72.7 0.114 69.4 0.414 -28.7 800 0.043 65.7 3.801 61.9 0.144 67.8 0.406 -35.7 1000 0.074 75.1 3.134 57.6 0.183 63.4 0.386 -41.8 1200 0.098 75.6 2.759 52.4 0.221 62.1 0.373 -49.8 1400 0.120 74.1 2.351 44.4 0.247 55.7 0.356 -56.3 1600 0.146 75.8 2.203 36.0 0.291 49.6 0.347 -66.6 1800 0.171 77.2 1.910 29.9 0.299 46.0 0.342 -78.8 2000 0.205 78.0 1.825 21.3 0.344 39.4 0.335 -89.6 isc Website：www.iscsemi.cn isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC3355 S-PARAMETER S11e, S22e-FREQUENCY S21e-FREQUENCY CONDITION VCE = 10 V CONDITION VCE = 10 V S12e-FREQUENCY IC = 40 mA isc Website：www.iscsemi.cn CONDITION VCE = 10 V IC = 40 mA 6