ONSEMI MPS6729

MPS6729
Preferred Device
One Watt Amplifier
Transistor
PNP Silicon
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–80
Vdc
Collector–Base Voltage
VCBO
–80
Vdc
Emitter–Base Voltage
VEBO
–4.0
Vdc
Collector Current – Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
–55 to
+150
°C
Operating and Storage Junction
Temperature Range
2
BASE
1
EMITTER
TO–92 (TO–226)
CASE 29–10
STYLE 1
1
THERMAL CHARACTERISTICS
Characteristic
2
3
Symbol
Max
Unit
Thermal Resistance,
Junction to Ambient
RJA
125
°C/W
MARKING DIAGRAM
Thermal Resistance,
Junction to Case
RJC
50
°C/W
MPS
6729
YWW
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
MPS6729
Package
Shipping
TO–92
Bulk
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 0
1
Publication Order Number:
MPS6729/D
MPS6729
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector–Emitter Breakdown Voltage (Note 1.)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–80
–
Vdc
Collector–Base Breakdown Voltage
(IC = 0.1 mA, IE = 0)
V(BR)CBO
–80
–
Vdc
Emitter–Base Breakdown Voltage
(IE = –10 Adc, IC = 0)
V(BR)EBO
–5.0
–
Vdc
Collector Cutoff Current
(VCB = –60 Vdc, IE = 0)
ICBO
–
–0.1
µAdc
Emitter Cutoff Current
(VEB = –5.0 Vdc, IC = 0)
IEBO
–
–10
µAdc
80
50
–
250
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1.)
DC Current Gain
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –250 mAdc, VCE = –1.0 Vdc)
hFE
–
Collector–Emitter Saturation Voltage
(IC = –250 mAdc, IB = –10 mAdc)
VCE(sat)
–
–0.5
Vdc
Base–Emitter On Voltage
(IC = –250 mAdc, VCE = –1.0 Vdc)
VBE(on)
–
–1.2
Vdc
Collector–Base Capacitance
(VCB = –10 Vdc, f = 1.0 MHz)
Ccb
–
30
pF
Small–Signal Current Gain
(IC = 200 mA, VCE = 5.0 V, f = 20 MHz)
hfe
2.5
25
SMALL–SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
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2
MPS6729
400
hFE, DC CURRENT GAIN
TJ = 125°C
200
VCE = -1.0 V
25°C
-55°C
100
80
60
40
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0
-7.0 -10
-20
-30
IC, COLLECTOR CURRENT (mA)
-50
-70
-100
-200
-300
-500
-1.0
-1.0
TJ = 25°C
TJ = 25°C
-0.8
-0.8
-0.6
IC = -10 mA
-50
mA
-100 mA
-250 mA
V, VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
-500 mA
-0.4
-0.2
VBE(sat) @ IC/IB = 10
-0.6
VBE(on) @ VCE = -1.0 V
-0.4
-0.2
VCE(sat) @ IC/IB = 10
0
-0.05 -0.1
-0.2
-0.5 -1.0 -2.0
-5.0
IB, BASE CURRENT (mA)
-10
-20
0
-0.5 -1.0
-50
Figure 2. Collector Saturation Region
-2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
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3
-500
MPS6729
100
θ VB, TEMPERATURE COEFFICIENT (mV/°C)
-0.8
70
-1.2
C, CAPACITANCE (pF)
50
-1.6
θVB for VBE
-2.0
30
20
10
-2.4
Cobo
7.0
-2.8
-0.5
-1.0
-2.0
-5.0 -10 -20
-50 -100 -200
IC, COLLECTOR CURRENT (mA)
5.0
-0.1
-500
-0.2
Figure 4. Base–Emitter Temperature Coefficient
-0.5 -1.0 -2.0
-5.0 -10 -20
VR, REVERSE VOLTAGE (VOLTS)
-50 -100
Figure 5. Capacitance
200
VCE = -2.0 V
TJ = 25°C
IC, COLLECTOR CURRENT (mA)
f,
T CURRENT-GAIN BANDWIDTH PRODUCT (MHz)
TJ = 25°C
Cibo
100
DUTY CYCLE ≤ 10%
-2 k
1.0 ms
-1 k
100 µs
-500
70
TA = 25°C
TC = 25°C
-200
50
-100
30
-50
-20
20
-2.0 -3.0
-5.0 -7.0 -10
-20 -30 -50 -70 -100
IC, COLLECTOR CURRENT (mA)
-10
-1.0
-200
Figure 6. Current–Gain – Bandwidth Product
dc
1.0 s
dc
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
MPSW55
MPSW56
-2.0
-5.0
-10
-20
-60 -80 -100
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region – Safe Operating Area
PACKAGE DIMENSIONS
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4
MPS6729
TO–92 (TO–226)
CASE 29–10
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
D
G
H
J
R
1 2 3
N C
SECTION X–X
N
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.021
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
--0.250
--0.080
0.105
--0.100
0.135
---
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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5
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.457
0.533
0.407
0.482
1.15
1.39
2.42
2.66
0.46
0.61
12.70
--6.35
--2.04
2.66
--2.54
3.43
---
MPS6729
Notes
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6
MPS6729
Notes
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7
MPS6729
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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8
MPS6729/D