MPSA44 Preferred Device High Voltage Transistor NPN Silicon Features http://onsemi.com • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 400 Vdc Collector −Base Voltage VCBO 500 Vdc Emitter −Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 300 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER MARKING DIAGRAM THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Ambient Characteristic RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. TO−92 (TO−226AA) CASE 29−11 STYLE 1 1 2 MPS A44 AYWWG G 3 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 4 1 Publication Order Number: MPSA44/D MPSA44 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector −Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 400 − Vdc Collector −Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 500 − Vdc Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 500 − Vdc Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Collector Cutoff Current (VCB = 400 Vdc, IE = 0) ICBO − 0.1 mAdc Collector Cutoff Current (VCE = 400 Vdc, VBE = 0) ICES − 500 nAdc Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO − 0.1 mAdc 40 50 45 40 − 200 − − − − − 0.4 0.5 0.75 OFF CHARACTERISTICS ON CHARACTERISTICS (Note 1) DC Current Gain (Note 1) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) hFE − Collector −Emitter Saturation Voltage (Note 1) (IC = 1.0 mAdc, IB = 0.1 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Vdc Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) − 0.75 Vdc Output Capacitance (VCB = 20 Vdc, IE = 0, f = 1.0 MHz) Cobo − 7.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo − 130 pF Small−Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) hfe 1.0 − − SMALL− SIGNAL CHARACTERISTICS 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Package Shipping † TO−92 5000 Units / Box TO−92 (Pb−Free) 5000 Units / Box TO−92 2000 / Tape & Reel MPSA44RL1G TO−92 (Pb−Free) 2000 / Tape & Reel MPSA44RLRA TO−92 2000 / Tape & Reel TO−92 (Pb−Free) 2000 / Tape & Reel Device MPSA44 MPSA44G MPSA44RL1 MPSA44RLRAG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS MPSA44 160 TA = 125°C hFE , DC CURRENT GAIN 140 120 VCE = 10 V 100 25°C 80 60 40 −55°C 20 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 300 0.5 0.4 IC = 1.0 mA TA = 25°C 0.2 0.1 0 10 30 100 300 1.0 k 3.0 k IB, BASE CURRENT (mA) 10 k 50 k Figure 2. Collector Saturation Region 1.0 1000 IC, COLLECTOR CURRENT (mA) TA = 25°C VBE(sat) @ IC/IB = 10 0.8 V, VOLTAGE (VOLTS) IC = 50 mA 0.3 Figure 1. DC Current Gain 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 VCE(sat) @ IC/IB = 10 1.0 ms 300 200 0 0.1 0.3 1.0 3.0 10 30 IC, COLLECTOR CURRENT (mA) 100 10 Figure 3. “On” Voltages CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT VALID FOR DUTY CYCLE ≤ 10% 2.0 MPSA44 20 50 100 10 5.0 VCE, COLLECTOR VOLTAGE (VOLTS) 200 500 |h fe |, SMALL−SIGNAL CURRENT GAIN 10 Cib 50 20 Cob 5.0 TA = 25°C f = 1.0 MHz 2.0 1.0 0.3 0.5 1.0 s Figure 4. Active Region − Safe Operating Area 100 10 100 ms 20 1.0 1.0 300 TC = 25°C TA = 25°C 100 2.0 C, CAPACITANCE (pF) IC = 10 mA 1.0 3.0 10 30 REVERSE BIAS (VOLTS) 100 3.0 2.0 1.5 1.0 0.1 300 VCE = 10 V f = 10 MHz TA = 25°C Figure 5. Capacitance 0.2 0.3 1.0 3.0 10 IC, COLLECTOR CURRENT (mA) 30 Figure 6. High Frequency Current Gain http://onsemi.com 3 100 MPSA44 10 Vin +9.7 V t, TIME (s) μ 5.0 PW = 50 mS DUTY CYCLE = 2.0% 2.0 1.0 0 −4.0 V 0.5 VCC = 150 V IC/IB = 10 TA = 25°C VBE(off) = 4.0 Vdc 0.2 0.1 1.0 VCC tr RL td 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 Vout 100 Vin RB CS ≤ 4.0 pF* Figure 7. Turn−On Switching Times and Test Circuit 10 Vin 5.0 +10.7 V t, TIME (s) μ ts PW = 50 mS DUTY CYCLE = 2.0% 2.0 1.0 0.5 tf VCC = 150 V IC/IB = 10 TA = 25°C 0.2 −11.4 V VCC RL 0.1 1.0 3.0 10 30 IC, COLLECTOR CURRENT (mA) 50 100 Vout Vin RB Figure 8. Turn−Off Switching Times and Test Circuit *Total Shunt Capacitance or Test Jig and Connectors. http://onsemi.com 4 CS ≤ 4.0 pF* MPSA44 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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