Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices makes ithem ideal for large–signal, common source amplifier applications in 28 volt base station equipment. • Guaranteed Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 11.5 dB Efficiency – 33% IMD – 28 dBc 45 W, 1.0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs D • Characterized with Series Equivalent Large–Signal Impedance Parameters • S–Parameter Characterization at High Bias Levels CASE 360B–01, STYLE 1 (MRF183) • Excellent Thermal Stability • 100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 45 Watts CW G CASE 360C–03, STYLE 1 (MRF183S) S MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Drain–Gate Voltage (RGS = 1 Meg Ohm) VDGR 65 Vdc VGS ± 20 Vdc Drain Current – Continuous ID 5 Adc Total Device Dissipation @ TC = 70°C Derate above 70°C PD 86 0.67 W W/°C Storage Temperature Range Tstg – 65 to +200 °C TJ 200 °C Symbol Max Unit RθJC 1.5 °C/W Gate–Source Voltage Operating Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF183 MRF183S 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit BVDSS 65 – – Vdc Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) IDSS – – 1 µAdc Gate–Source Leakage Current (VGS = 20 V, VDS = 0) IGSS – – 1 µAdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mAdc) VGS(Q) 3 – 5 Vdc Drain–Source On–Voltage (VGS = 10 V, ID = 3 A) VDS(on) – 0.7 – Vdc gfs – 2 – S Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss – 82 – pF Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Coss – 38 – pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Crss – 4.5 – pF Gps 11.5 13 – dB η 33 36 – % 3rd Order Intermodulation Distortion IMD – –32 –28 dBc Input Return Loss IRL 9 14 – dB 13 – dB OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 50 mAdc) ON CHARACTERISTICS Forward Transconductance (VDS = 10 Vdc, ID = 5 Adc) DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 945.0, f2 = 945.1 MHz, IDQ = 250 mA) Two–Tone Common Source Amplifier Power Gain Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 Watts PEP, f1 = 930.0, f2 = 930.1 MHz, and f1 = 960.0, f2 = 960.1 MHz, IDQ = 250 mA) Two–Tone Common Source Amplifier Power Gain Gps – η – 35 – % 3rd Order Intermodulation Distortion IMD – –32 – dBc Input Return Loss IRL – 12 – dB Two–Tone Drain Efficiency Output Mismatch Stress (VDD = 28 Vdc, Pout = 45 Watts CW, IDQ = 250 mA, f = 945 MHz, VSWR 5:1 at All Phase Angles) MRF183 MRF183S 2 Ψ No Degradation in Output Power Before and After Test MOTOROLA RF DEVICE DATA VGG R1 B1 R2 + C1 B2 C2 R3 C3 C4 C13 L1 C14 C15 C8 C5 Z1 Z2 Z3 C6 B1 B2 C1 C2, C14 C3 C4, C13 C5, C12 C6, C11 C7, C8 C9, C10 C15 C16 L1, L2 R1 R2 Z4 Z5 C9 Z6 Z7 C7 Short Ferrite Bead Long Ferrite Bead 10 µF, 50 V Electrolytic Capacitor 0.1 µF Chip Capacitor 1000 pF Chip Capacitor 47 pf Chip Capacitor 47 pF Chip Capacitor 0.8–8.0 pF Trim Capacitor 10 pF Chip Capacitor 10 pF Chip Capacitor 100 pF Chip Capacitor 250 µF, 50 V Electrolytic Capacitor 5 Turns, 24 AWG, ID 0.059″ 120 Ω, 1/4 W Carbon 18 kΩ, 1/4 W Carbon VDD C16 L2 DUT RF INPUT + Z8 C10 R3 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Board RF OUTPUT C12 Z9 Z10 Z11 C11 4.7 MΩ, 1/4 W Carbon T–Line, 0.200″ x 0.080″ T–Line, 0.570″ x 0.120″ T–Line, 0.610″ x 0.320″ T–Line, 0.160″ x 0.320″ x 0.620″ Tapered Line T–Line, 0.650″ x 0.620″ T–Line, 0.020″ x 0.620″ T–Line, 0.270″ x 0.320″ T–Line, 0.130″ x 0.320″ T–Line, 0.370″ x 0.080″ T–Line, 1.050″ x 0.080″ T–Line, 0.290″ x 0.080″ 0.030″ Glass Teflon, εr = 2.55 ARLON–GX–0300–55–22 Figure 1. MRF183S Two Tone Test Circuit Schematic MOTOROLA RF DEVICE DATA MRF183 MRF183S 3 – 20 VDD = 28 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz – 35 3rd ORDER – 40 5th – 45 – 50 – 55 7th – 60 – 65 – 70 0 10 5 20 30 40 15 25 35 Pout, OUTPUT POWER (WATTS PEP) 45 50 –20 – 25 IDQ = 75 mA – 30 – 35 150 mA – 40 – 45 250 mA – 50 – 55 0.1 Figure 2. Intermodulation Distortion versus Output Power 1 10 Pout, OUTPUT POWER (WATTS PEP) 60 VDD = 28 Vdc f = 945 MHz 285 mA 15 14.5 150 mA 14 13.5 Pout , OUTPUT POWER (WATTS) IDQ = 450 mA 15.5 16 50 15 Gpe 40 14 30 13 Pout 20 12 VDD = 28 Vdc IDQ = 75 mA f = 945 MHz 10 75 mA 13 1 10 Pout, OUTPUT POWER (WATTS) 0 100 0 Figure 4. Power Gain versus Output Power 2.5 2 1.5 3 Pin, INPUT POWER (WATTS) 3.5 4 10 50 Pin = 4.0 W 45 P out , OUTPUT POWER (WATTS) 80 P out , OUTPUT POWER (WATTS) 1 0.5 11 Figure 5. Output Power versus Input Power 90 70 2.0 W 60 50 40 1.0 W 30 20 VDD = 28 Vdc IDQ = 75 mA f1 = 945 MHz 10 0 100 Figure 3. Intermodulation Distortion versus Output Power 16 Gpe , POWER GAIN (dB) VDD = 28 Vdc f1 = 945 MHz f2 = 945.1 MHz 450 mA Gpe , POWER GAIN (dB) – 25 – 30 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 15 17 19 23 21 25 27 29 VDS, DRAIN VOLTAGE (VOLTS) 31 33 Figure 6. Output Power versus Drain Bias Supply Voltage MRF183 MRF183S 4 40 35 30 TYPICAL DEVICE SHOWN VGS(th) TYPICAL = 3.13 V 25 20 15 VDD = 28 Vdc Pin = 1.5 W f1 = 945 MHz 10 5 35 0 0 0.5 1 1.5 2.5 3 2 3.5 VGS, GATE BIAS (VOLTS) 4 4.5 5 Figure 7. Output Power versus Gate Bias Supply Voltage MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 4000 3500 50 I D, DRAIN CURRENT (mA) P out , OUTPUT POWER (WATTS) 60 3000 Pin = 2.0 W 40 2500 30 1.0 W 20 0.5 W VDD = 28 Vdc IDQ = 75 mA SINGLE TONE 10 0 800 TYPICAL DEVICE SHOWN 2000 1500 1000 VDS = 28 Vdc 500 0.1 W 0 820 840 860 880 900 920 940 f, FREQUENCY (MHz) 960 980 1000 0 Figure 8. Output Power versus Frequency 1 5 6 Figure 9. Drain Current versus Gate Voltage 4.5 120 Ciss 80 60 40 Coss VGS = 0 Vdc f = 1.0 MHz 20 I D, DRAIN CURRENT (AMPS) 4 100 C, CAPACITANCE (pF) 2 4 3 VGS, GATE VOLTAGE (VOLTS) ID = 3.67 A 3.5 TCASE = 70°C 3 2.5 TCASE = 100°C 2 1.5 1 0.5 Crss TJ = 175°C 0 0 0 5 15 25 35 40 10 20 30 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 45 50 Figure 10. Capacitance versus Voltage 5 0 15 25 10 20 30 VDS, DRAIN VOLTAGE (VOLTS) 35 40 Figure 11. Class A Safe Operating Region 80 P out , OUTPUT POWER (dBm) 70 60 50 FUNDAMENTAL 40 30 3rd ORDER 20 10 0 VDD = 26 Vdc IDQ = 1.8 A f1 = 945 MHz f2 = 945.1 MHz –10 –20 –30 –40 10 15 20 25 35 45 30 40 Pin, INPUT POWER (dBm) 50 55 60 Figure 12. Class A Third Order Intercept Point MOTOROLA RF DEVICE DATA MRF183 MRF183S 5 G T, GAIN (dB) η 11 35 10 –30 –31 9 IMD 8 –32 7 –33 VSWR 6 925 930 935 945 950 940 f, FREQUENCY (MHz) 955 960 –34 965 3.00 40 12 2.00 GAIN INPUT VSWR 13 1.00 45 INTERMODULATION DISTORTION (dBc) 14 η, EFFICIENCY (%) TYPICAL CHARACTERISTICS Figure 13. Broadband Power Performance of MRF183S C1 TO GATE BIAS FEEDTHRU C2 R2 R1 B1 C3 C4 IND1 B2 C14 C15 C13 C8 TO DRAIN BIAS FEEDTHRU C16 IND2 C9 C10 C5 C12 C7 C6 C11 MRF183S Figure 14. MRF183S Two Tone Test Circuit Component Parts Layout MRF183 MRF183S 6 MOTOROLA RF DEVICE DATA f = 930 MHz Zin f = 960 MHz f = 930 MHz ZOL* f = 960 MHz Z0 = 10 Ω VDD = 28 V, IDQ = 250 mA, Pout = 45 W (PEP) f MHz Zin Ohms ZOL* Ohms 930 1.10 + j0.93 2.60 – j0.13 945 1.10 + j0.78 2.70 – j0.28 960 1.10 + j0.60 2.80 – j0.42 Zin = Conjugate of source impedance. ZOL = Conjugate of the load impedance at given output ZOL* = power, voltage and current conditions. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Figure 15. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA MRF183 MRF183S 7 Table 1. Typical Common Source S–Parameters (VDS = 13.5 V) ID = 1.5 A S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.954 –157 29.58 100 0.017 11 0.778 –161 30 0.941 –164 19.73 96 0.017 8 0.796 –168 40 0.922 –168 14.84 93 0.017 4 0.804 –170 50 0.907 –171 11.94 91 0.017 3 0.808 –172 60 0.903 –172 9.75 89 0.017 2 0.812 –173 70 0.899 –173 8.34 88 0.017 0 0.814 –174 80 0.898 –174 7.29 86 0.017 –1 0.816 –175 90 0.896 –175 6.49 85 0.017 –2 0.816 –175 100 0.897 –175 5.83 84 0.017 –2 0.817 –175 150 0.895 –177 3.82 79 0.017 –6 0.822 –176 200 0.898 –178 2.84 74 0.016 –9 0.828 –176 250 0.902 –178 2.24 70 0.016 –11 0.835 –176 300 0.908 –179 1.84 66 0.015 –14 0.842 –176 350 0.905 –179 1.55 62 0.015 –16 0.850 –176 400 0.913 –180 1.32 58 0.014 –18 0.861 –176 450 0.920 180 1.15 54 0.014 –18 0.865 –176 500 0.924 179 1.01 51 0.013 –20 0.874 –177 550 0.922 179 0.89 47 0.013 –21 0.881 –177 600 0.931 178 0.80 44 0.012 –21 0.889 –177 650 0.935 178 0.72 41 0.011 –20 0.895 –177 700 0.935 177 0.64 38 0.011 –17 0.901 –178 750 0.937 177 0.59 37 0.012 –18 0.905 –178 800 0.940 176 0.54 33 0.012 –20 0.913 –178 850 0.943 176 0.50 30 0.012 –29 0.919 –179 900 0.945 175 0.46 28 0.010 –33 0.924 –179 950 0.947 174 0.43 26 0.009 –34 0.930 –180 1000 0.947 174 0.40 24 0.008 –29 0.935 180 1050 0.947 173 0.37 21 0.007 –24 0.939 179 1100 0.952 172 0.35 19 0.007 –19 0.944 179 1150 0.949 172 0.32 17 0.007 –17 0.948 178 1200 0.946 171 0.30 14 0.006 –16 0.948 177 1250 0.954 170 0.28 12 0.006 –13 0.953 177 1300 0.952 170 0.27 9 0.006 –12 0.950 176 1350 0.949 169 0.26 9 0.006 –10 0.951 176 1400 0.948 168 0.23 8 0.005 –7 0.953 175 1450 0.948 168 0.22 6 0.004 4 0.948 174 1500 0.940 167 0.21 4 0.004 19 0.944 174 MRF183 MRF183S 8 MOTOROLA RF DEVICE DATA Table 2. Typical Common Source S–Parameters (VDS = 28 V) ID = 1.5 A S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 20 0.968 –132 45.79 113 0.014 24 0.579 –145 30 0.953 –145 31.75 106 0.015 17 0.623 –157 40 0.921 –154 24.33 99 0.015 12 0.648 –161 50 0.904 –159 19.68 95 0.015 7 0.661 –164 60 0.898 –163 16.11 92 0.015 5 0.670 –166 70 0.890 –165 13.79 90 0.015 2 0.677 –167 80 0.886 –167 12.06 87 0.015 1 0.681 –168 90 0.886 –168 10.71 86 0.015 –1 0.684 –169 100 0.887 –169 9.61 84 0.015 –3 0.688 –169 150 0.886 –172 6.26 76 0.015 –9 0.706 –170 200 0.890 –174 4.59 69 0.014 –13 0.724 –170 250 0.898 –175 3.57 64 0.014 –17 0.744 –169 300 0.906 –176 2.88 59 0.013 –19 0.764 –169 350 0.908 –177 2.37 54 0.012 –23 0.785 –169 400 0.915 –178 2.00 49 0.011 –24 0.807 –170 450 0.924 –178 1.71 45 0.010 –25 0.821 –170 500 0.930 –179 1.48 41 0.010 –26 0.838 –171 550 0.928 –180 1.28 37 0.009 –26 0.851 –171 600 0.937 180 1.13 33 0.008 –25 0.865 –172 650 0.944 179 1.00 30 0.007 –22 0.878 –172 700 0.943 178 0.88 27 0.008 –14 0.888 –173 750 0.946 178 0.81 25 0.008 –15 0.895 –173 800 0.949 177 0.73 22 0.009 –17 0.906 –174 850 0.954 177 0.67 20 0.009 –28 0.912 –175 900 0.953 175 0.61 18 0.007 –34 0.919 –175 950 0.957 175 0.56 15 0.005 –32 0.927 –176 1000 0.957 174 0.51 13 0.004 –22 0.934 –177 1050 0.957 174 0.48 10 0.004 –11 0.939 –178 1100 0.962 173 0.45 8 0.004 –2 0.945 –178 1150 0.959 172 0.41 7 0.004 3 0.950 –179 1200 0.955 171 0.39 4 0.004 9 0.950 –180 1250 0.962 170 0.36 2 0.004 13 0.955 180 1300 0.959 170 0.33 0 0.004 17 0.953 179 1350 0.956 169 0.31 –1 0.004 25 0.954 178 1400 0.954 168 0.29 –4 0.004 32 0.957 177 1450 0.955 168 0.28 –6 0.004 46 0.952 177 1500 0.948 167 0.26 –7 0.004 56 0.948 176 MOTOROLA RF DEVICE DATA MRF183 MRF183S 9 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. G 1 –B– 3 Q 2 PL 2 K 0.25 (0.010) D E H T A M B M C F N M –T– SEATING PLANE DIM A B C D E F G H K N Q INCHES MIN MAX 0.790 0.810 0.220 0.240 0.125 0.175 0.205 0.225 0.050 0.070 0.004 0.006 0.562 BSC 0.070 0.090 0.215 0.255 0.350 0.370 0.120 0.140 MILLIMETERS MIN MAX 20.07 20.57 5.59 6.09 3.18 4.45 5.21 5.71 1.27 1.77 0.11 0.15 14.27 BSC 1.78 2.29 5.47 6.47 8.89 9.39 3.05 3.55 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360B–01 ISSUE O (MRF183) 1 –B– NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2 K E D N DIM A B C D E F H K N F H 3 C –T– SEATING PLANE INCHES MIN MAX 0.370 0.390 0.220 0.240 0.105 0.155 0.205 0.225 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.350 0.370 MILLIMETERS MIN MAX 9.40 9.91 5.59 6.09 2.67 3.94 5.21 5.71 0.89 1.14 0.11 0.15 1.45 1.70 2.16 2.92 8.89 9.39 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE –A– CASE 360C–03 ISSUE B (MRF183S) Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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