Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFETs • Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) • Low Thermal Resistance D • Ruggedness Tested at Rated Output Power • Nitride Passivated Die for Enhanced Reliability • Low Noise Figure — 1.5 dB Typ at 2.0 A, 150 MHz • Excellent Thermal Stability; Suited for Class A Operation G S CASE 211–11, STYLE 2 (MRF173) MAXIMUM RATINGS Symbol Value Unit Drain–Source Voltage Rating VDSS 65 Vdc Drain–Gate Voltage VDGO 65 Vdc VGS ±40 Vdc Drain Current — Continuous ID 9.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 220 1.26 Watts W/°C Storage Temperature Range Tstg –65 to +150 °C TJ 200 °C Gate–Source Voltage Operating Temperature Range CASE 316–01, STYLE 2 (MRF173CQ) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.8 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — V Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) IDSS — — 2.0 mA Gate–Source Leakage Current (VGS = 40 V, VDS = 0 V) IGSS — — 1.0 µA Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) VGS(th) 1.0 3.0 6.0 V Drain–Source On–Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) VDS(on) — — 1.4 V gfs 1.8 2.2 — Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA ON CHARACTERISTICS Forward Transconductance (VDS = 10 V, ID = 2.0 A) mhos (continued) NOTE — CAUTION — MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 8 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF173 MRF173CQ 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss — 110 — pF Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Coss — 105 — pF Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Crss — 10 — pF Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) NF — 1.5 — dB Common Source Power Gain (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Gps 11 13 — dB Drain Efficiency (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) η 55 60 — % Electrical Ruggedness (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Load VSWR 30:1 at all phase angles ψ DYNAMIC CHARACTERISTICS FUNCTIONAL CHARACTERISTICS No Degradation in Output Power Series Equivalent Input Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) MRF173 Zin — 2.99 – j4.5 — Ohms Series Equivalent Output Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) MRF173 Zout — 2.68 – j1.3 — Ohms Series Equivalent Input Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) MRF173CQ Zin — 1.35 – j5.15 — Ohms Series Equivalent Output Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) MRF173CQ Zout — 2.72 – j149 — Ohms RFC1 R2 R1 + C8 – C9 C11 Z1 C12 + C10 – C13 VDD = 28 V + Vdc C14 – RFC2 RF OUTPUT D.U.T. L3 C16 RF INPUT C1 L4 R3 L1 C2 L2 C4 C5 C15 C6 C7 C3 C1, C15 — 470 pF Unelco C2, C3, C5 — 9–180 pF, Arco 463 C4, C6 — 15 pF, Unelco C7 — 5–80 pF, Arco 462 C8, C10, C14, C16 — 0.1 µF C9, C13 — 50 µF, 50 Vdc C11, C12 — 680 pF, Feed Through L1 — #16 AWG, 1–1/4 Turns, 0.3″ ID L2 — #16 AWG Hairpin 1″ long L3 — #14 AWG Hairpin 0.8″ long L4 — #14 AWG Hairpin 1.1″ long RFC1 — Ferroxcube VK200–19/4B RFC2 — 18 Turns #18 AWG Enameled, 0.3″ ID R1 — 10 kΩ, 10 Turns Bourns R2 — 1.8 kΩ, 1/4 W R3 — 10 kΩ, 1/2 W Z1 — 1N5925A Motorola Zener Figure 1. 150 MHz Test Circuit MRF173 MRF173CQ 2 MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 80 120 f = 100 MHz 80 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 70 150 MHz 100 200 MHz 60 40 VDD = 28 V IDQ = 50 mA 20 0 0 1 2 3 4 5 6 7 8 9 50 150 MHz 40 200 MHz 30 20 VDD = 13.5 V IDQ = 50 mA 10 0 10 f = 100 MHz 60 0 2.0 4.0 Pin, INPUT POWER (WATTS) Figure 2. Output Power versus Input Power IDQ = 50 mA f = 100 MHz 120 Pin = 4.0 W Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 14 12 140 100 2.0 W 60 1.0 W 40 20 12 14 16 18 20 22 24 26 28 IDQ = 50 mA f = 150 MHz Pin = 8.0 W 100 3.0 W 80 0 10 8.0 Figure 3. Output Power versus Input Power 140 120 6.0 Pin, INPUT POWER (WATTS) 80 4.0 W 60 2.0 W 40 20 0 10 30 6.0 W 12 14 VDD, SUPPLY VOLTAGE (VOLTS) 16 18 20 22 24 26 28 30 VDD, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage Figure 5. Output Power versus Supply Voltage 22 140 Pout , OUTPUT POWER (WATTS) IDQ = 50 mA f = 200 MHz Pin = 14 W 100 10 W 80 6.0 W 60 4.0 W 40 G PS , POWER GAIN (dB) 20 120 Pout = 80 W VDD = 28 V IDQ = 50 mA 18 16 14 12 10 8.0 6.0 20 0 10 4.0 12 14 16 18 20 22 24 26 28 VDD, SUPPLY VOLTAGE (VOLTS) Figure 6. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA 30 2.0 20 40 60 80 100 120 140 160 f, FREQUENCY (MHz) 180 200 220 Figure 7. Power Gain versus Frequency MRF173 MRF173CQ 3 6.0 60 50 f = 150 MHz Pin = CONSTANT VDS = 28 V IDQ = 50 mA VGS(th) = 3.0 V 40 30 20 VDS = 10 V VGS(th) = 3.0 V 4.0 3.0 2.0 1.0 10 0 –14 5.0 0 –12 –10 –8.0 –6.0 –4.0 –2.0 0 2.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) 4.0 6.0 0 VGS , GATE-SOURCE VOLTAGE (NORMALIZED) Figure 8. Output Power versus Gate Voltage 1.0 2.0 3.0 4.0 5.0 VGS, GATE–SOURCE VOLTAGE (VOLTS) 6.0 Figure 9. Drain Current versus Gate Voltage 420 1.2 140 Ciss VDS = 28 V 120 360 100 300 ID = 3.0 A 1.0 500 mA 50 mA 0.8 VGS = 0 V FREQ = 1 MHz 240 1.0 A 0.9 0.7 –25 C oss , CAPACITANCE (pF) 1.1 60 180 Coss 120 Crss 60 0 25 50 75 100 125 150 175 0 TC, CASE TEMPERATURE (C°) Figure 10. Gate–Source Voltage versus Case Temperature 80 0 4 8 12 16 20 24 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 40 20 28 Crss , C iss , CAPACITANCE (pF) 70 ID , DRAIN CURRENT (AMPS) Pout , OUTPUT POWER (WATTS) 80 0 Figure 11. Capacitance versus Drain Voltage ID , DRAIN CURRENT (AMPS) 10 5.0 2.0 TC = 25°C 1.0 0.5 0.2 0.1 1.0 2.0 4.0 6.0 10 20 40 VDS, DRAIN–SOURCE VOLTAGE (VOLTS) 60 100 Figure 12. DC Safe Operating Area MRF173 MRF173CQ 4 MOTOROLA RF DEVICE DATA DESIGN CONSIDERATIONS The MRF173/CQ is a RF MOSFET power N–channel enhancement mode field–effect transistor (FET) designed for VHF power amplifier applications. Motorola’s RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V–groove power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF173/CQ is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many MOTOROLA RF DEVICE DATA applications. The MRF173/CQ was characterized at IDQ = 50 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF173/CQ may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (see Figure 8.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF173/CQ. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOSFETs helps ease the task of broadband network design. Both small–signal scattering parameters and large–signal impedances are provided. While the s–parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs. MRF173 MRF173CQ 5 PACKAGE DIMENSIONS A U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. M 1 M Q DIM A B C D E H J K M Q R U 4 R 2 B 3 D K J C H E SEATING PLANE INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 ––– 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 ––– 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54 SOURCE GATE SOURCE DRAIN CASE 211–11 ISSUE N F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N H A U INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 STYLE 2: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 BASE COLLECTOR BASE EMITTER CASE 316–01 ISSUE D MRF173 MRF173CQ 6 MOTOROLA RF DEVICE DATA MOTOROLA RF DEVICE DATA MRF173 MRF173CQ 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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