Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 2, 4/2008 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain — 25 dB Drain Efficiency — 68.3% 10 - 450 MHz, 150 W, 50 V LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6V2150NR1 • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6V2150NBR1 PARTS ARE SINGLE - ENDED RFin/VGS RFout/VDS RFin/VGS RFout/VDS (Top View) Note: Exposed backside of the package is the source terminal for the transistor. Figure 1. Pin Connections Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5 +110 Vdc Gate - Source Voltage VGS - 0.5 + 12 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 1 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 150 W CW Symbol Value (1,2) Unit RθJC 0.24 °C/W Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) IDSS — — 2.5 mA Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) IDSS — — 50 μAdc V(BR)DSS 110 — — Vdc IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 400 μAdc) VGS(th) 1 1.62 3 Vdc Gate Quiescent Voltage (VDD = 50 Vdc, ID = 450 mAdc, Measured in Functional Test) VGS(Q) 1.5 2.6 3.5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.26 — Vdc Reverse Transfer Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 1.6 — pF Output Capacitance (VDS = 50 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 93 — pF Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 163 — pF Off Characteristics Drain - Source Breakdown Voltage (ID = 75 mA, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W, f = 220 MHz, CW Power Gain Gps 23.5 25 26.5 dB Drain Efficiency ηD 66 68.3 — % Input Return Loss IRL — - 17 -9 dB 1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2150N and MRF6V2150NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices. MRF6V2150NR1 MRF6V2150NBR1 2 RF Device Data Freescale Semiconductor B3 VSUPPLY + B1 VBIAS + + + C1 C2 C3 C17 L2 C4 C5 C6 C14 L1 C8 RF INPUT Z1 C9 C10 C11 R2 Z2 Z3 Z4 C19 C20 B2 R1 C7 C18 L3 Z5 Z7 Z8 C15 C16 Z9 Z11 Z10 RF OUTPUT C23 Z6 C21 C22 C12 DUT C13 Z1 Z2 Z3 Z4 Z5 Z6, Z7 0.352″ 0.944″ 1.480″ 0.276″ 0.434″ 0.298″ x 0.082″ x 0.082″ x 0.082″ x 0.220″ x 0.220″ x 0.630″ Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Z8 Z9 Z10 Z11 PCB 0.443″ x 0.170″ Microstrip 2.360″ x 0.170″ Microstrip 0.502″ x 0.170″ Microstrip 0.443″ x 0.082″ Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030″, εr = 2.55 Figure 2. MRF6V2150NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2150NR1(NBR1) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 95 Ω, 100 MHz Long Ferrite Beads, Surface Mount 2743021447 Fair - Rite B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount 2743019447 Fair - Rite C1 47 μF, 50 V Electrolytic Capacitor 476KXM063M Illinois Capacitor C2 22 μF, 35 V Tantalum Chip Capacitor T494X226K035AT Kemet C3 10 μF, 35 V Tantalum Chip Capacitor T491D106K035AT Kemet C4, C17 39 K pF Chip Capacitors ATC200B393KT50XT ATC C5, C18 22 K pF Chip Capacitors ATC200B203KT50XT ATC C6, C11, C19 0.1 μF, 50 V Chip Capacitors CDR33BX104AKYS Kemet C7, C8, C15, C16 2.2 μF, 50 V Chip Capacitors C1825C225J5RAC Kemet C9, C12, C14, C23 1000 pF Chip Capacitors ATC100B102JT50XT ATC C10 220 nF Chip Capacitor C1812C224K5RAC Kemet C13 75 pF Chip Capacitor ATC100B750JT500XT ATC C20 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi - Con C21 30 pF Chip Capacitor ATC100B300JT500XT ATC C22 33 pF Chip Capacitor ATC100B330JT500XT ATC L1 4 Turn #18 AWG, 0.18” ID None None L2 82 nH Inductor 1812SMS - 82NJL Coilcraft L3 17.5 nH Inductor B06TJL Coilcraft R1 270 Ω, 1/4 W Chip Resistor CRCW12062700FKEA Vishay R2 27 Ω, 1/4 W Chip Resistor CRCW12064R75FKEA Vishay MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 3 C2 C1 C3 + B1 B3 C4 C5 C6 C7 C18 C17 C20 R1 B2 C10 C15* C16* C8 C11 L2 C9 C12 C14 L1 L3 CUT OUT AREA R2 + C19 C23 C21 C22 C13 MRF6V2150N/NB Rev. 3 * Stacked Figure 3. MRF6V2150NR1(NBR1) Test Circuit Component Layout MRF6V2150NR1 MRF6V2150NBR1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 1000 100 100 ID, DRAIN CURRENT (AMPS) C, CAPACITANCE (pF) Ciss Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS = 0 Vdc 10 Crss 10 TC = 25°C 1 1 0 10 20 30 40 50 1 10 100 200 100 200 VDS, DRAIN−SOURCE VOLTAGE (VOLTS) VDS, DRAIN−SOURCE VOLTAGE (VOLTS) Figure 4. Capacitance versus Drain - Source Voltage Figure 5. DC Safe Operating Area 27 IDQ = 675 mA 26 4 Gps, POWER GAIN (dB) ID, DRAIN CURRENT (AMPS) 5 VGS = 3 V 3 2.75 V 2 2.63 V 2.5 V 1 563 mA 25 450 mA 24 337 mA 23 VDD = 50 Vdc f = 220 MHz 225 mA 22 2.25 V 21 0 0 20 40 60 80 100 120 DRAIN VOLTAGE (VOLTS) Pout, OUTPUT POWER (WATTS) CW Figure 6. DC Drain Current versus Drain Voltage Figure 7. CW Power Gain versus Output Power 58 −10 VDD = 50 Vdc, f1 = 220 MHz, f2 = 220.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing −15 −20 Pout, OUTPUT POWER (dBm) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) 10 1 IDQ = 225 mA −25 −30 336 mA −35 450 mA −40 563 mA −45 685 mA −50 P1dB = 52.27 dBm (168.66 W) 54 Actual 52 50 900 mA −55 VDD = 50 Vdc, IDQ = 450 mA f = 220 MHz −60 5 10 Ideal P3dB = 52.61 dBm (182.39 W) 56 100 300 48 22 24 26 28 30 32 Pout, OUTPUT POWER (WATTS) PEP Pin, INPUT POWER (dBm) Figure 8. Third Order Intermodulation Distortion versus Output Power Figure 9. CW Output Power versus Input Power MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 26 55 Pout, OUTPUT POWER (dBm) Gps, POWER GAIN (dB) 24 22 45 V 50 V 40 V 20 35 V 18 30 V 25 V 16 IDQ = 450 mA f = 220 MHz VDD = 20 V 50 100 150 200 85_C 25_C 45 40 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 35 10 14 0 TC = −30_C 50 15 20 25 30 35 Pout, OUTPUT POWER (WATTS) CW Pin, INPUT POWER (dBm) Figure 10. Power Gain versus Output Power Figure 11. Power Output versus Power Input 28 108 80 25_C −30_C Gps 26 60 TC = −30_C 50 25 25_C 24 40 85_C 23 30 ηD 22 VDD = 50 Vdc IDQ = 450 mA f = 220 MHz 21 5 10 100 Pout, OUTPUT POWER (WATTS) CW Figure 12. Power Gain and Drain Efficiency versus CW Output Power MTTF (HOURS) 70 85_C ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 27 107 106 20 10 200 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 150 W CW, and ηD = 68.3%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRF6V2150NR1 MRF6V2150NBR1 6 RF Device Data Freescale Semiconductor Zsource f = 220 MHz Zo = 10 Ω Zload f = 220 MHz VDD = 50 Vdc, IDQ = 450 mA, Pout = 150 W CW f MHz Zsource W Zload W 220 2.45 + j6.95 3.90 + j5.50 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 7 PACKAGE DIMENSIONS MRF6V2150NR1 MRF6V2150NBR1 8 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 9 MRF6V2150NR1 MRF6V2150NBR1 10 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 11 MRF6V2150NR1 MRF6V2150NBR1 12 RF Device Data Freescale Semiconductor MRF6V2150NR1 MRF6V2150NBR1 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Feb. 2007 • Initial Release of Data Sheet 1 May 2007 • Corrected Test Circuit Component part numbers in Table 6, Component Designations and Values for C4, C17, C5, C18, C9, C12, C14, C23, C13, C21, and C22, p. 3 2 Apr. 2008 • Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1 • Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 • Updated PCB information to show more specific material details, Fig. 2, Test Circuit Schematic, p. 3 • Updated Part Numbers in Table 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Replaced Case Outline 1486 - 03, Issue C, with 1486 - 03, Issue D, p. 8 - 10. Added pin numbers 1 through 4 on Sheet 1. • Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue E, p. 11 - 13. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. MRF6V2150NR1 MRF6V2150NBR1 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007-2008. All rights reserved. MRF6V2150NR1 MRF6V2150NBR1 Document Number: RF Device Data MRF6V2150N Rev. 2, 4/2008 Freescale Semiconductor 15