Order this document by MRF858/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800 – 960 MHz. CLASS A 800 – 960 MHz 3.6 W (CW), 24 V NPN SILICON RF POWER TRANSISTOR • Specified for VCE = 24 Vdc, IC = 0.5 Adc Characteristics Output Power = 3.6 Watts CW Minimum Power Gain = 11 dB Minimum ITO = + 44.5 dBm Typical Noise Figure = 6 dB • Characterized with Small–Signal S–Parameters and Series Equivalent Large–Signal Parameters from 800– 960 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ 24 Vdc, IC = 0.5 Adc and Rated Output Power • Will Withstand RF Input Overdrive of 0.85 W CW CASE 319–07, STYLE 2 MRF858 • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 319A–02, STYLE 2 MRF858S MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 4 Vdc Total Device Dissipation @ TC = 50°C Derate above 50°C PD 20 0.138 Watts W/°C Operating Junction Temperature TJ 200 °C Tstg – 65 to +150 °C Symbol Max Unit RθJC 6.9 °C/W Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance (TJ = 150°C, TC = 50°C) ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 20 mA, IB = 0) V(BR)CEO 28 35 — Vdc Collector–Emitter Breakdown Voltage (IC = 20 mA, VBE = 0) V(BR)CES 55 85 — Vdc Collector–Base Breakdown Voltage (IC = 20 mA, IE = 0) V(BR)CBO 55 85 — Vdc Emitter–Base Breakdown Voltage (IE = 1 mA, IC = 0) V(BR)EBO 4 5 — Vdc ICES — — 1 mA OFF CHARACTERISTICS Collector Cutoff Current (VCB = 24 V, IE = 0) (continued) Teflon is a registered trademark of du Pont de Nemours & Co., Inc. REV 2 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF858 MRF858S 1 ELECTRICAL CHARACTERISTICS — continued Characteristic Symbol Min Typ Max Unit hFE 30 60 120 — Cob — 6.5 8 pF Common–Emitter Power Gain (VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz, Power Output = 3.6 W) Pg 11 12 — dB Load Mismatch (Po = 3.6 W) (VCE = 24 V, IC = 0.5 A, f = 840 MHz, Load VSWR = 30:1, All Phase Angles) ψ RF Input Overdrive (VCE = 24 V, IC = 0.5 A, f = 840 MHz) No degradation Pin(over) — — 0.85 W Third Order Intercept Point (VCE = 24 V, IC = 0.5 A) (f1 = 900 MHz, f2 = 900.1 MHz, Meas. @ IMD 3rd Order = –40 dBc) ITO + 44.5 + 45.5 — dBm Noise Figure (VCE = 24 V, IC = 0.5 A, f = 900 MHz) NF — 6 — dB Input Return Loss (VCE = 24 V, IC = 0.5 A, f = 840– 900 MHz, Power Output = 3.6 W) IRL — – 12 –9 dB ON CHARACTERISTICS DC Current Gain (IC = 0.1 A, VCE = 5 V) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 24 V, f = 1 MHz) FUNCTIONAL CHARACTERISTICS No Degradation in Output Power Table 1. MRF858 Common Emitter S–Parameters S11 S21 S12 S22 VCE (V) IC (A) f (MHz) |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 24 0.5 800 820 840 860 880 900 920 940 960 0.942 0.942 0.941 0.940 0.941 0.940 0.940 0.940 0.940 167 166 166 166 165 165 165 164 164 1.493 1.453 1.415 1.379 1.351 1.320 1.289 1.252 1.222 50 50 49 48 47 46 45 44 43 0.027 0.027 0.028 0.028 0.029 0.030 0.030 0.031 0.031 58 58 59 59 59 59 59 59 59 0.538 0.541 0.545 0.550 0.553 0.557 0.562 0.566 0.570 – 165 – 164 – 165 – 165 – 165 – 165 – 165 – 165 – 165 Table 2. Zin and ZOL* versus Frequency f (MHz) 840 870 900 Zin (Ohms) 1.1 1.1 1.2 ZOL* (Ohms) 2.9 3.5 3.5 9.9 9.5 9 – 14.4 – 14.6 – 14.5 VCE = 24 V, IC = 0.5 A, Po = 3.6 W ZOL* = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency. MRF858 MRF858S 2 MOTOROLA RF DEVICE DATA + VCE R8 R1 R2 F1 V_SUPPLY C1 Q1 Q2 R3 R4 L1 R5 R7 C15 + C2 R6 L2 B1 C3 B2 C4 C7 + C5 C16 L3 C6 L4 TL1 C9 C8 DUT INPUT C15 TL5 OUTPUT TL4 C12 C10 C13 TL2 Short Ferrite Bead, Fair Rite (2743021447) 250 µF, 50 Vdc Electrolytic Capacitor 10 µF, 50 Vdc Electrolytic Capacitor 0.1 µF, Chip Capacitor 100 pF, Chip Capacitor 43 pF, 100 Mil Chip Capacitor 10 pF, Mini–Unelco 5 pF, Mini–Unelco 0.8 – 8.0 pF, Johanson Gigatrim 1000 pF, Chip Capacitor 1 A Micro–Fuse 10 Turns, 20 AWG, 0.150″ ID (10 Ω 1/2 W Resistor) 4 Turns, 16 AWG, 0.101″ ID 0.5″ 18 AWG Wire MMBT2222ALT1, NPN Transistor BD136, PNP Transistor C14 0.685″ TL3 B1, B2 C1 C2, C5 C3, C6 C4, C7 C8, C15 C9, C10 C11 C12, C13, C14 C15, C16 F1 L1, L2 L3 L4 Q1 Q2 C11 R1 R2 R3 R4 R5 R6 R7 R8 TL1, TL5 TL2 TL3 TL4 V_Supply VCE Board 390 Ω, 1/4 W 500 Ω Potentiometer, 1/4 W 7.5K Ω, 1/4 W 2 x 4.7K Ω, 1/4 W 56 Ω, 2 W 75 Ω, 1/4 W 4.7 Ω, 1/4 W 4 Ω, 10 W 50 Ω, Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line Microstrip Transmission Line + 26 Vdc ± 0.5 Vdc Due to Resistor Tolerance + 24 Vdc @ 0.5 A 0.030″ Glass–Teflon 2 oz. Cu, εr = 2.55 Figure 1. MRF858 Class A RF Test Fixture Schematic MOTOROLA RF DEVICE DATA MRF858 MRF858S 3 TYPICAL CHARACTERISTICS 13.5 4 3.5 Gpe 12.5 3 VCC = 24 Vdc IC = 500 mA Pout = 3.6 W (CW) 12 2.5 11.5 2 VSWR in , INPUT VSWR G pe , POWER GAIN (dB) 13 1.5 11 VSWR 10.5 830 840 850 860 870 880 f, FREQUENCY (MHz) 890 1 910 900 Figure 2. Performance in Broadband Circuit 15 1 4 13 Gpe 5 VCC = 24 Vdc IC = 500 mA f = 870 MHz 4 1 2 11 3 Pout 2 10 1 9 0 8 0.1 0 0.2 0.3 0.4 0.5 0.6 0.7 Pin, INPUT POWER (WATTS) 0.8 0.9 1000 500 0 1 Tj = 150°C Tf = 50°C 1500 IC (mAdc) 6 2000 G pe , POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 7 2 0 4 6 Figure 3. Output Power & Power Gain versus Input Power 10 12 14 16 18 20 VCE (Vdc) 22 24 26 28 Figure 4. DC SOA 1.00E+08 1000 900 Tj = 175°C Tf = 50°C 800 700 600 50 00 2 4 6 8 10 12 14 16 18 20 22 24 26 28 VCE (Vdc) Figure 5. DC SOA (This device is MTBF limited for VCE < 20 Vdc.) MRF858 MRF858S 4 MTBF FACTOR (HOURS x AMPS2) 1100 IC (mAdc) 8 1.72E+07 1.00E+07 3.58E+06 8.57E+05 1.00E+06 2.34E+05 7.17E+04 1.00E+05 2.43E+04 8.98E+03 1.00E+04 1.00E+03 100 120 3.59E+03 1.53E+03 140 160 180 200 220 240 260 TJ, JUNCTION TEMPERATURE (°C) Figure 6. MTBF Factor versus Junction Temperature MOTOROLA RF DEVICE DATA R3 R2 R1 Q1 C5 + R5 R7 R6 C6 Q1 R8 R4 B2 C15 + C2 L2 B1 C4 C3 L1 C7 L3 C9 L4 C15 C16 C11 C8 C12 C11 C10 C14 C13 MRF858 Figure 7. MRF858 Test Fixture Component Layout MOTOROLA RF DEVICE DATA MRF858 MRF858S 5 PACKAGE DIMENSIONS Q 2 PL -AL IDENTIFICATION NOTCH 6 5 0.15 (0.006) M T A M N M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 -N1 2 3 DIM A B C D E F H J K L N Q K F D 2 PL 0.38 (0.015) M B 0.38 (0.015) T A M N M T A M N M M J C H E -T- SEATING PLANE STYLE 2: PIN 1. 2. 3. 4. 5. 6. INCHES MIN MAX 0.965 0.985 0.355 0.375 0.230 0.260 0.115 0.125 0.102 0.114 0.075 0.085 0.160 0.170 0.004 0.006 0.090 0.110 0.725 BSC 0.225 0.241 0.125 0.135 MILLIMETER MIN MAX 24.52 25.01 9.02 9.52 5.85 6.60 2.93 3.17 2.59 2.90 1.91 2.15 4.07 4.31 0.11 0.15 2.29 2.79 18.42 BSC 5.72 6.12 3.18 3.42 EMITTER (COMMON) BASE (INPUT) EMITTER (COMMON) EMITTER (COMMON) COLLECTOR (OUTPUT) EMITTER (COMMON) CASE 319–07 ISSUE M MRF858 IDENTIFICATION NOTCH A 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. K 4 B 1 2 3 STYLE 2: PIN 1. 2. 3. 4. 5. 6. F D J C SEATING PLANE H EMITTER BASE EMITTER EMITTER COLLECTOR EMITTER DIM A B C D F H J K INCHES MIN MAX 0.355 0.365 0.225 0.235 0.110 0.125 0.115 0.125 0.075 0.085 0.035 0.045 0.004 0.006 0.090 0.110 MILLIMETERS MIN MAX 9.02 9.27 5.72 5.96 2.80 3.17 2.93 3.17 1.91 2.15 0.89 1.14 0.11 0.15 2.29 2.79 CASE 319A–02 ISSUE B MRF858S Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF858 MRF858S 6 ◊ *MRF858/D* MRF858/D MOTOROLA RF DEVICE DATA