Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications. • Typical Single - Carrier N - CDMA. Performance @ 880 MHz: VDD = 28 Volts, IDQ = 1200 mA, Pout = 35 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 21 dB Drain Efficiency — 31% ACPR @ 750 kHz Offset — - 46.8 dBc in 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness. Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRFE6S9160HR3 MRFE6S9160HSR3 880 MHz, 35 W AVG., 28 V SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRFE6S9160HR3 CASE 465A - 06, STYLE 1 NI - 780S MRFE6S9160HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +66 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Storage Temperature Range Tstg - 65 to +150 °C TC 150 °C TJ 225 °C Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 81°C, 160 W CW Case Temperature 73°C, 35 W CW Symbol RθJC Value (2,3) 0.31 0.33 Unit °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. RF Device Data Freescale Semiconductor MRFE6S9160HR3 MRFE6S9160HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1A (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 66 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 10 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 525 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1200 mAdc) VGS(Q) — 3 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1200 mAdc, Measured in Functional Test) VGG(Q) 2.1 3.17 4.22 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) 0.1 0.175 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.2 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 80.2 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. N - CDMA, f = 880 MHz, Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 20 21 23 dB Drain Efficiency ηD 29 31 — % ACPR — - 46.8 - 45 dBc IRL — - 17 -9 dB Adjacent Channel Power Ratio Input Return Loss 1. VGG = 19/18 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part is internally matched on input. (continued) MRFE6S9160HR3 MRFE6S9160HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, 865 - 900 MHz Bandwidth Video Bandwidth @ 160 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) ΔIMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) VBW MHz — 10 — Gain Flatness in 35 MHz Bandwidth @ Pout = 35 W Avg. GF — 0.5 — dB Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.016 — dB/°C ΔP1dB — 0.008 — dBm/°C Output Power Variation over Temperature ( - 30°C to +85°C) MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 3 B2 VBIAS B1 VSUPPLY R2 + + C20 C21 R1 C16 C17 C18 C7 L1 RF INPUT Z1 C22 C23 C24 L2 C19 Z9 C9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 C5 Z2 Z3 Z4 Z5 Z6 Z7 C2 Z8 C8 C1 C3 C6 C4 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z19 RF OUTPUT C10 C11 C12 C13 C15 C14 DUT 0.426″ x 0.080″ Microstrip 0.813″ x 0.080″ Microstrip 0.471″ x 0.080″ Microstrip 0.319″ x 0.220″ Microstrip 0.171″ x 0.220″ Microstrip 0.200″ x 0.425″ x 0.630″ Taper 0.742″ x 0.630″ Microstrip 0.233″ x 0.630″ Microstrip 0.128″ x 0.630″ Microstrip 0.134″ x 0.630″ Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 PCB 0.066″ x 0.630″ Microstrip 0.630″ x 0.425″ x 0.220″ Taper 0.120″ x 0.220″ Microstrip 0.292″ x 0.220″ Microstrip 0.023″ x 0.220″ Microstrip 0.030″ x 0.220″ Microstrip 0.846″ x 0.080″ Microstrip 0.440″ x 0.080″ Microstrip 0.434″ x 0.080″ Microstrip Arlon CuClad 250GX - 0300- 55- 22, 0.030″, εr = 2.55 Figure 1. MRFE6S9160HR3(SR3) Test Circuit Schematic Table 5. MRFE6S9160HR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2 Ferrite Beads, Small 2743019447 Fair Rite C1, C2, C19 47 pF Chip Capacitors ATC100B470JT500XT ATC C3, C11 0.8- 8.0 pF Variable Capacitors, Gigatrim 27291SL Johanson C4 2.7 pF Chip Capacitor ATC100B2R7JT500XT ATC C5, C6 15 pF Chip Capacitors ATC100B150JT500XT ATC C7, C8 12 pF Chip Capacitors ATC100B120JT500XT ATC C9, C10 4.3 pF Chip Capacitors ATC100B4R3JT500XT ATC C12 8.2 pF Chip Capacitor ATC100B8R2JT500XT ATC C13, C14 3.9 pF Chip Capacitors ATC100B3R9JT500XT ATC C15 0.6- 4.5 pF Variable Capacitor, Gigatrim 27271SL Johanson C16 22 pF Chip Capacitor ATC100B220JT500XT ATC C17 1 μF, 50 V Tantalum Capacitor T491C105K0J0AT Kemet C18 20K pF Chip Capacitor CDR35BP203AKYS Kemet C20 180 pF Chip Capacitor ATC100B181JT500XT ATC C21, C22, C23 10 μF, 50 V Chip Capacitors GRM55DR61H106KA88B Murata C24 470 μF, 63 V Electrolytic Capacitor ESME630ELL471MK25S United Chemi - Con L1, L2 10 nH Inductors 0603HC Coilcraft R1 180 Ω, 1/4 W Chip Resistor CRCW12061800FKEA Vishay R2 10 Ω, 1/4 W Chip Resistor CRCW120610R0FKEA Vishay MRFE6S9160HR3 MRFE6S9160HSR3 4 RF Device Data Freescale Semiconductor C24 C16 B1 C18 C17 B2 900 MHz Rev. 2 C21 R2 C22 C23 R1 C19 C20 L1 C7 C9 C5 L2 C1 C3 C4 C6 CUT OUT AREA C14 C12 C13 C15 C2 C8 C10 C11 Figure 2. MRFE6S9160HR3(SR3) Test Circuit Component Layout MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 21 27 VDD = 28 Vdc, Pout = 35 W (Avg.) IDQ = 1200 mA, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 Gps 18 17 −40 −45 ACPR 16 −50 IRL −55 15 14 −60 ALT1 13 820 840 860 880 900 920 940 960 −65 980 0 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) 19 30 ACPR (dBc), ALT1 (dBc) 20 ηD, DRAIN EFFICIENCY (%) 33 ηD f, FREQUENCY (MHz) Figure 3. Single - Carrier N - CDMA Broadband Performance @ Pout = 35 Watts Avg. 45 40 Gps, POWER GAIN (dB) 18 VDD = 28 Vdc, Pout = 70 W (Avg.) IDQ = 1200 mA, N−CDMA IS−95 Pilot Sync, Paging, Traffic Codes 8 Through 13 17 16 Gps 35 −30 ACPR 15 −40 IRL 14 −50 13 ALT1 −60 12 820 840 860 880 900 920 940 960 −70 980 0 −5 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) 19 ACPR (dBc), ALT1 (dBc) ηD ηD, DRAIN EFFICIENCY (%) 50 20 f, FREQUENCY (MHz) Figure 4. Single - Carrier N - CDMA Broadband Performance @ Pout = 70 Watts Avg. 22 IDQ = 1800 mA Gps, POWER GAIN (dB) 21 20 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −10 1500 mA 1200 mA 900 mA 19 18 600 mA 17 VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 100 kHz Tone Spacing VDD = 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 1 kHz Tone Spacing −20 −30 IDQ = 600 mA −40 900 mA −50 1200 mA 1800 mA 1500 mA −60 −70 16 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRFE6S9160HR3 MRFE6S9160HSR3 6 RF Device Data Freescale Semiconductor −10 IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS VDD = 28 Vdc, IDQ = 1200 mA f1 = 880 MHz, f2 = 880.1 MHz Two−Tone Measurements, 1 kHz Tone Spacing −20 −30 −40 3rd Order −50 −60 5th Order −70 7th Order −80 10 1 100 0 VDD = 28 Vdc, Pout = 140 W (PEP) IDQ = 1200 mA, Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 880 MHz −10 −20 −30 IM3−U −40 IM3−L IM5−U −50 IM5−L IM7−L IM7−U −60 −70 400 10 1 Pout, OUTPUT POWER (WATTS) PEP TWO−TONE SPACING (MHz) Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 60 100 Ideal P6dB = 53.13 dBm (205.59 W) Pout, OUTPUT POWER (dBm) 58 P3dB = 52.86 dBm (193.2 W) 56 P1dB = 52.1 dBm (162.2 W) 54 Actual 52 VDD = 28 Vdc, IDQ = 1200 mA Pulsed CW, 12 μsec(on), 1% Duty Cycle f = 880 MHz 50 48 28 29 30 31 32 33 34 36 35 37 Pin, INPUT POWER (dBm) 80 −20 60 VDD = 28 Vdc, IDQ = 1200 mA f = 880 MHz, N−CDMA IS−95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 50 ACPR 70 TC = −30_C −30 85_C 25_C 25_C 40 −40 85_C −50 −60 −30_C 30 −70 ALT1 20 −30_C −80 Gps 10 85_C 25_C ηD 0 1 10 100 −90 −100 200 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT1, CHANNEL POWER (dBc) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) Figure 9. Pulsed CW Output Power versus Input Power Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 24 23 TC = −30_C 25_C 60 85_C 50 21 20 25_C 40 19 85_C 30 18 VDD = 28 Vdc IDQ = 1200 mA f = 880 MHz ηD 17 20 10 19 18 IDQ = 1200 mA f = 880 MHz 17 VDD = 24 V 10 0 400 16 1 20 Gps, POWER GAIN (dB) Gps ηD, DRAIN EFFICIENCY (%) 70 −30_C 22 Gps, POWER GAIN (dB) 21 80 100 28 V 32 V 16 0 100 200 Pout, OUTPUT POWER (WATTS) CW Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain and Drain Efficiency versus CW Output Power Figure 12. Power Gain versus Output Power 300 MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 35 W Avg., and ηD = 31%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 13. MTTF versus Junction Temperature MRFE6S9160HR3 MRFE6S9160HSR3 8 RF Device Data Freescale Semiconductor N - CDMA TEST SIGNAL 100 −10 −20 −30 1 −40 −50 0.1 (dB) PROBABILITY (%) 10 IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) 1.2288 MHz Channel Bandwidth Carriers. ACPR Measured in 30 kHz Bandwidth @ ±750 kHz Offset. ALT1 Measured in 30 kHz Bandwidth @ ±1.98 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF. 0.01 0.001 −60 −70 −80 −90 0.0001 0 2 4 6 8 10 1.2288 MHz Channel BW .. .................................................. . . . ............ .. .. .. .. .. .. . .. .. .. . . −ALT1 in 30 kHz +ALT1 in 30 kHz .. . . Integrated BW Integrated BW .... . ................... ......... .......... ..... ......... . ............. ...... ... .. . . . . . . . .............. ................. ......... .......... ... ...... ........ ...... . . . .......... . . . . . . . . . ............. . ......... . . . . .. . . .. . . . . . .. .... . −ACPR in 30 kHz +ACPR in 30 kHz ................. ........ .. ............ . . ............ ... ................ . . . . . . Integrated BW Integrated BW .. ..... ............. ........ ...... .......... ........... −100 PEAK−TO−AVERAGE (dB) Figure 14. Single - Carrier CCDF N - CDMA −110 −3.6 −2.9 −2.2 −1.5 −0.7 0 0.7 1.5 2.2 2.9 3.6 f, FREQUENCY (MHz) Figure 15. Single - Carrier N - CDMA Spectrum MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 9 f = 910 MHz Zload f = 850 MHz Zo = 2 Ω f = 910 MHz Zsource f = 850 MHz VDD = 28 Vdc, IDQ = 1200 mA, Pout = 35 W Avg. f MHz Zsource Ω Zload Ω 850 0.61 - j1.27 1.20 + j0.03 865 0.66 - j1.15 1.26 + j0.15 880 0.64 - j1.05 1.31 + j0.22 895 0.55 - j0.90 1.32 + j0.28 910 0.48 - j0.74 1.26 + j0.32 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 16. Series Equivalent Source and Load Impedance MRFE6S9160HR3 MRFE6S9160HSR3 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 T A M M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M bbb N R (INSULATOR) M T A M B M ccc M T A M M aaa M T A M ccc H B S (LID) M T A M B (LID) M (INSULATOR) B M C F E A T A SEATING PLANE INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465 - 06 ISSUE G NI - 780 MRFE6S9160HR3 (FLANGE) DIM A B C D E F G H K M N Q R S aaa bbb ccc 4X U (FLANGE) 4X Z (LID) B 1 K 2X 2 B (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. D bbb M T A M B M N (LID) ccc M R M T A M B M ccc M T A S (INSULATOR) bbb M T A M M B M aaa M T A M (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRFE6S9160HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRFE6S9160HR3 MRFE6S9160HSR3 RF Device Data Freescale Semiconductor 11 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 Mar. 2007 • Initial Release of Data Sheet 1 Dec. 2008 • Table 4, On Characteristics, tightened VDS(on) Min value from 0.05 to 0.1 to match production test values, p. 2 • Updated PCB information to show more specific material details, Fig. 1, Test Circuit Schematic, p. 4 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 • Adjust scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 7 MRFE6S9160HR3 MRFE6S9160HSR3 12 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2007 - 2008. All rights reserved. MRFE6S9160HR3 MRFE6S9160HSR3 Document RF DeviceNumber: Data MRFE6S9160H Rev. 1, 12/2008 Freescale Semiconductor 13